公开(公告)号：US07393467B2

公开(公告)日：2008-07-01

申请号：US11341625

申请日：2006-01-30

申请人： Motoki Asahara ,  Tetsuhide Sawada ,  Hiroyuki Kato

发明人： Motoki Asahara ,  Tetsuhide Sawada ,  Hiroyuki Kato

IPC分类号： C09K19/52 ,  C09K19/32 ,  C09K19/20 ,  C09K19/38 ,  C08G63/00

CPC分类号： C08G63/605 ,  C08G63/80

摘要： Provided is a liquid-crystalline polyester with good properties obtainable by subjecting a prepolymer consisting of the repeating units represented by formulae (I), (II), (III) and (IV): to heat treatment in a substantially solid state.

摘要翻译： 本发明提供一种具有良好性能的液晶聚酯，其通过使由式（I），（II），（III）和（IV）表示的重复单元组成的预聚物以基本上固态进行热处理而得到。

公开(公告)号：USD561340S1

公开(公告)日：2008-02-05

申请号：US29277672

申请日：2007-03-06

申请人： Masashi Kitamura ,  Tadashi Koike ,  Yukiko Mitsunami ,  Takahide Tanaka ,  Hiroyuki Kato ,  Masayuki Fukutsuka ,  Takashi Shigeno ,  Kazuya Andachi

设计人： Masashi Kitamura ,  Tadashi Koike ,  Yukiko Mitsunami ,  Takahide Tanaka ,  Hiroyuki Kato ,  Masayuki Fukutsuka ,  Takashi Shigeno ,  Kazuya Andachi

公开(公告)号：US20070285700A1

公开(公告)日：2007-12-13

申请号：US11889916

申请日：2007-08-17

申请人： Yoshiko Suenaga ,  Kazuaki Kidokoro ,  Hiroyuki Kato ,  Akihiko Fujiwara

发明人： Yoshiko Suenaga ,  Kazuaki Kidokoro ,  Hiroyuki Kato ,  Akihiko Fujiwara

IPC分类号： H04N1/00

CPC分类号： G06F17/30011

摘要： In a data processing system in which data to be processed is managed as processing-object data, and the processing-object data is processed in response to a designation, there are provided: data management means for managing the processing-object data together with processing-object attribute information indicative of an attribute thereof; processing designation means for designating a processing with respect to the processing-object data through a dialog performed with the user; processing execution means for executing a processing of the processing-object data in response to a designation performed by the processing designation means; and first processing result forecasting means for executing, when the dialog is performed, a forecast on a result of the processing by comparing processing-subject attribute information, which indicates an attribute of a processing to be executed by the processing execution means, with the processing-object attribute information, and for outputting to the user forecast notification information in accordance with the result of the processing obtained through the forecast.

摘要翻译： 在将要处理的数据作为处理对象数据进行管理的数据处理系统中，并且响应于指定对处理对象数据进行处理，提供：数据管理装置，用于管理处理对象数据以及处理 - 表示其属性的对象属性信息; 处理指定装置，用于通过与用户执行的对话来指定关于处理对象数据的处理; 处理执行装置，用于响应于由处理指定装置执行的指定，执行处理对象数据的处理; 以及第一处理结果预测装置，用于通过将表示处理执行装置执行的处理的属性的处理对象属性信息与处理对象属性信息进行比较来执行对对话的预测， - 对象属性信息，并且根据通过预测获得的处理结果向用户输出预测通知信息。

公开(公告)号：US20070284485A1

公开(公告)日：2007-12-13

申请号：US11761737

申请日：2007-06-12

申请人： Hiroyuki Kato

发明人： Hiroyuki Kato

IPC分类号： F16L3/22

CPC分类号： F16L55/035 ,  F16L3/223

摘要： A vibration absorbing clamp for holding elongated members has an anchor and a holder that are coupled to one another through vibration absorbing material and cooperable coupling members embedded in the vibration absorbing material. The coupling members are free of direct contact with one another but serve to limit relative movement between the holder and the anchor. The clamp can be manufactured in a two-stage molding process in which the holder and the anchor, with the coupling members, are first molded of hard plastic, and then the vibration absorbing material is molded into a space between the holder and the anchor so as to embed the coupling members.

摘要翻译： 用于保持细长构件的振动吸收夹具具有通过振动吸收材料和嵌入振动吸收材料中的可配合联接构件彼此联接的锚固件和保持器。 联接构件彼此不直接接触，但用于限制保持器和锚固件之间的相对运动。 夹具可以在两级成型工艺中制造，其中保持器和具有联接构件的锚固件首先由硬塑料模制，然后将振动吸收材料模制成保持器和锚固件之间的空间，因此 以便嵌入联接构件。

公开(公告)号：US07285728B2

公开(公告)日：2007-10-23

申请号：US11090028

申请日：2005-03-28

申请人： Masahiro Sunohara ,  Kei Murayama ,  Hiroyuki Kato ,  Syoji Watanabe

发明人： Masahiro Sunohara ,  Kei Murayama ,  Hiroyuki Kato ,  Syoji Watanabe

IPC分类号： H05K1/16

CPC分类号： H01L25/0657 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2225/06524 ,  H01L2225/06586 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/185 ,  Y10T29/49128 ,  H01L2924/00

摘要： An electronic parts packaging structure of the present invention includes a core substrate having such a structure that a recess portion is provided by forming a prepreg insulating layer having an opening portion therein on a resin layer, and an electronic parts mounted on a bottom portion of the recess portion of the core substrate such that a connection pad of the electronic parts is directed upward, and also, such a structure may be employed that the electronic parts is embedded in a resin layer of a core substrate having a structure that the resin layer is formed on the prepreg insulating layer.

摘要翻译： 本发明的电子零件包装结构包括具有这样的结构的芯基板，该芯基板通过在树脂层上形成具有开口部分的预浸料绝缘层而形成凹部，以及安装在该底板上的电子部件 芯基板的凹部，使得电子部件的连接垫朝向上方，并且也可以采用这样的结构，即将电子部件嵌入到具有树脂层的结构的芯基板的树脂层中 形成在预浸料绝缘层上。

公开(公告)号：US07257867B2

公开(公告)日：2007-08-21

申请号：US11115297

申请日：2005-04-27

申请人： Suguru Mizukoshi ,  Hiroyuki Kato

发明人： Suguru Mizukoshi ,  Hiroyuki Kato

IPC分类号： F16B5/00

CPC分类号： F16B5/065 ,  B60R13/0206 ,  B60R13/08 ,  F16B21/073 ,  Y10T24/309 ,  Y10T24/42

摘要： A clip for attaching a second member such as an insulator to a first member such as a car body, includes a first clip component attached to the first member and a second clip component working with the first clip component to support the second member. The first clip component has a flange for contacting the first member, a leg extending from the flange for insertion into a mounting hole in the first member, and a shank extending from the flange in a direction opposite to the leg for engaging the second clip component. The second clip component has a flange for contacting the second member, a tube for receiving the shank, and pawls inside the tube. The end of the shank has a portion for engaging the pawls to clamp the second member between the flanges.

摘要翻译： 用于将诸如绝缘体的第二构件附接到诸如轿厢主体的第一构件的夹子包括附接到第一构件的第一夹子组件和与第一夹子组件一起工作以支撑第二构件的第二夹具组件。 第一夹子组件具有用于接触第一构件的凸缘，从凸缘延伸以插入第一构件中的安装孔的腿部以及沿着与腿部相反的方向从凸缘延伸的杆，用于接合第二夹子部件 。 第二夹子组件具有用于接触第二构件的凸缘，用于接收柄的管和管内的棘爪。 柄的端部具有用于接合棘爪以将第二构件夹在凸缘之间的部分。

公开(公告)号：US20070152233A1

公开(公告)日：2007-07-05

申请号：US11509063

申请日：2006-08-24

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

IPC分类号： H01L33/00 ,  H01L29/24 ,  H01L21/00

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20070134842A1

公开(公告)日：2007-06-14

申请号：US11589998

申请日：2006-10-31

申请人： Hiroshi Kotani ,  Michihiro Sano ,  Hiroyuki Kato ,  Akio Ogawa

发明人： Hiroshi Kotani ,  Michihiro Sano ,  Hiroyuki Kato ,  Akio Ogawa

IPC分类号： H01L21/16 ,  H01L21/00

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631 ,  H01L33/0083

摘要： A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).

摘要翻译： 一种氧化锌（ZnO）系半导体晶体的制造方法，其特征在于，提供具有Zn极性面的基板， 并且在所述衬底的Zn极性平面上使至少锌（Zn）和氧（O）反应，以在富锌条件下在所述衬底的Zn极性平面上生长ZnO基半导体晶体。 （a）在基板的Zn极性平面上形成n型ZnO缓冲层。 （b）在n型ZnO缓冲层的表面上形成n型ZnO层。 （c）在n型ZnO层的表面上形成n型ZnMgO层。 （d）通过交替层叠ZnO层和ZnMgO层，在n型ZnMgO层的表面上形成ZnO / ZnMgO量子阱层。 @（e）p型ZnMgO层 形成在ZnO / ZnMgO量子阱层的表面上。 （f）在p型ZnMgO层的表面上形成p型ZnO层。 @（g）在n型ZnO层和p型ZnO层上形成电极。 在步骤（b），在富锌条件下形成n型ZnO层。

公开(公告)号：US20070051459A1

公开(公告)日：2007-03-08

申请号：US11516737

申请日：2006-09-07

申请人： Takaharu Yamano ,  Kosaku Harayama ,  Hiroyuki Kato ,  Tetsuya Koyama

发明人： Takaharu Yamano ,  Kosaku Harayama ,  Hiroyuki Kato ,  Tetsuya Koyama

IPC分类号： H05K3/46 ,  B32B38/04 ,  B32B38/00

CPC分类号： H05K3/4661 ,  H05K3/0035 ,  H05K3/108 ,  H05K3/381 ,  H05K2203/0554 ,  H05K2203/1152 ,  Y10T156/10 ,  Y10T156/1057 ,  Y10T156/1082

摘要： The method for forming wiring includes: laminating a thermosetting resin film in a semi-cured state and a metallic foil in this order on an insulating substrate where base-layer wiring is formed, a mat surface of the metallic foil facing the resin film, pressing the film and the foil with application of heat; forming an opening in the metallic foil so as to expose a part of the insulating resin layer in which a via hole is to be formed; forming the via hole in the insulating resin layer by irradiating high-energy beams on to insulating resin layer by using as a mask the metallic foil in which the opening is formed; performing a desmear process of the via hole via the opening of the metallic foil; removing the metallic foil by etching; forming an electroless-plated layer that continuously covers the top surface of the insulating resin layer, a side surface of the via hole and a top surface of the base-layer wiring corresponding to the bottom of the via hole; and forming wiring including an electroplated layer on the electroless-plated layer by a semi-additive process.

摘要翻译： 形成布线的方法包括：在形成基底布线的绝缘基板上依次层叠半固化状态的热固性树脂膜和金属箔，金属箔的面向树脂膜的垫表面，压制 薄膜和箔片应用热量; 在金属箔中形成开口以露出要形成通孔的绝缘树脂层的一部分; 通过使用形成开口的金属箔作为掩模，将高能束照射到绝缘树脂层上，从而在绝缘树脂层中形成通孔; 经由金属箔的开口进行通孔的去污处理; 通过蚀刻去除金属箔; 形成连续地覆盖绝缘树脂层的顶面，通路孔的侧面和与通孔的底部对应的基底布线的顶面的无电解镀层; 以及通过半添加工艺在所述化学镀层上形成包括电镀层的布线。

公开(公告)号：US20070034144A1

公开(公告)日：2007-02-15

申请号：US11463369

申请日：2006-08-09

申请人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani

发明人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/16 ,  C30B23/005 ,  C30B23/02

摘要： A growth apparatus and a method for making a nitrogen (N)-doped oxide crystal grow can be configured to set a nitrogen concentration to a desired concentration and to make the concentration of nitrogen uniform in a depth direction. A nitrogen source gun configured to supply ammonia (NH3) gas into an ultrahigh vacuum chamber can be arranged on a side of an ultrahigh vacuum chamber that is approximately opposite to a side that includes an exhaust port. A stage can be located between the nitrogen source gun and the exhaust port so as to form a flow path for ammonia that allows ammonia introduced into the ultrahigh vacuum chamber to be quickly exhausted after reaching a ZnO substrate placed on the stage. As a result, accumulation of ammonia in the ultrahigh vacuum chamber can be minimized, so that the nitrogen concentration in a crystal growth layer on the ZnO substrate can be set at a desired concentration and can be made uniform in the depth direction.

摘要翻译： 可以将生长装置和氮（N）掺杂氧化物晶体生长的方法构成为将氮浓度设定为所需浓度，并使氮浓度在深度方向上均匀。 配置成将氮（NH 3）气体供应到超高真空室中的氮源枪可以布置在与包括排气口的一侧大致相反的超高真空室的一侧。 阶段可以位于氮源枪和排气口之间，以便形成氨的流动通道，允许在达到放置在载物台上的ZnO衬底之后，引入超高真空室的氨被快速排出。 结果，可以使超高真空室中的氨的积累最小化，使得ZnO基板上的晶体生长层中的氮浓度可以设定为期望的浓度并且可以在深度方向上均匀。