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    Method For Making Nanostructures
    141.
    发明申请
    Method For Making Nanostructures 有权
    制造纳米结构的方法

    公开(公告)号：US20080197766A1

    公开(公告)日：2008-08-21

    申请号：US11915238

    申请日：2006-05-29

    Applicant: Thomas Goislard de Monsabert ,  Jean Dijon

    Inventor： Thomas Goislard de Monsabert ,  Jean Dijon

    IPC: H01J1/62 ,  B44C1/22 ,  H01J1/14

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  H01J1/3048 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/055

    Abstract: A process for making nanostructures on a support, including: supplying a support including a surface layer on one of its faces, covering the surface layer by a catalyst layer structured according to a pattern exposing areas of the surface layer covered by the catalyst and areas of the surface layer not covered by the catalyst, etching the thickness of the surface layer in the areas not covered by the catalyst layer, and selectively growing nanostructures on the areas of the surface layer covered by the catalyst. The process can also be used to make cathode structures with electrically independent nanostructures.

    Abstract translation: 一种在载体上制备纳米结构的方法，包括：在其一个表面上提供包括表面层的载体，通过根据暴露由催化剂覆盖的表面层的区域的图案构成的催化剂层覆盖表面层， 表面层未被催化剂覆盖，蚀刻未被催化剂层覆盖的区域中的表面层的厚度，并且在由催化剂覆盖的表面层的区域上选择性地生长纳米结构。 该方法也可用于制备具有电独立纳米结构的阴极结构。

    Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
    144.
    发明授权
    Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate 有权
    氮和磷掺杂的非晶硅作为场致发射显示器件基板的电阻器

    公开(公告)号：US07239075B2

    公开(公告)日：2007-07-03

    申请号：US11416338

    申请日：2006-05-02

    Applicant: Kanwal K. Raina ,  Benham Moradi

    Inventor： Kanwal K. Raina ,  Benham Moradi

    IPC: H01J19/02

    CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

    Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

    Electron emission device and electron emission display having the same
    145.
    发明申请
    Electron emission device and electron emission display having the same 失效
    电子发射器件和电子发射显示器具有相同的功能

    公开(公告)号：US20070096625A1

    公开(公告)日：2007-05-03

    申请号：US11584128

    申请日：2006-10-20

    Applicant: Si-Myeong Kim

    Inventor： Si-Myeong Kim

    IPC: H01J63/04 ,  H01J1/62

    CPC classification number: H01J1/304 ,  H01J31/127 ,  H01J2201/319

    Abstract: An electron emission device and display including the same include a substrate; a cathode electrode including a first electrode portion formed on the substrate and having opening portions, and second electrode portions placed within respective ones of the opening portions such that the second electrodes are separated from the first electrode; a resistance layer electrically interconnecting the first electrode portion and the second electrode portions of the cathode electrode; and electron emission regions electrically connected to the second electrode portions. A width of the second electrode portions or of the resistance layer between the first and second electrode portions varies along a longitudinal direction of the cathode electrode.

    Abstract translation: 包括其的电子发射装置和显示器包括基板; 阴极，其包括形成在所述基板上并具有开口部的第一电极部，以及设置在所述开口部的各个开口部内的第二电极部，使得所述第二电极与所述第一电极分离; 使第一电极部和阴极的第二电极部电连接的电阻层; 以及与第二电极部电连接的电子发射区域。 第一电极部分或第二电极部分之间的电阻层的宽度沿着阴极电极的长度方向变化。

    Apparatuses for providing uniform electron beams from field emission displays
    149.
    发明申请
    Apparatuses for providing uniform electron beams from field emission displays 审中-公开
    用于从场发射显示器提供均匀电子束的装置

    公开(公告)号：US20050285504A1

    公开(公告)日：2005-12-29

    申请号：US11207685

    申请日：2005-08-18

    Applicant: Robert Rasmussen

    Inventor： Robert Rasmussen

    IPC: G09G3/10 ,  G09G3/22 ,  H01J1/62 ,  H01J21/10 ,  H01J29/48 ,  H01J29/98 ,  H01J31/12 ,  H01J63/04

    CPC classification number: G09G3/22 ,  G09G2320/0233 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/4695

    Abstract: The invention includes field emitters, field emission displays (FEDs), monitors, computer systems for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, VGrid, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

    Abstract translation: 本发明包括场发射器，场致发射显示器（FED），监视器，用于从FED装置的阴极提供均匀电子束的计算机系统。 这些装置各自包括电子束均匀性电路。 电子束均匀性电路提供具有足以诱导来自阴极的场发射的DC偏移电压的电网电压V T和栅极电压，以及叠加在DC偏移电压上的周期性信号，用于在 频率足够快，不能被人眼察觉。 阴极可以是微尖或扁平的品种。 周期信号可以是正弦曲线，其中峰 - 峰电压介于约5伏至约50伏之间。

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