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    Electrically controllable integrated switch
    151.
    发明授权
    Electrically controllable integrated switch 有权

    公开(公告)号：US10510503B2

    公开(公告)日：2019-12-17

    申请号：US14985083

    申请日：2015-12-30

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Christian Rivero ,  Pascal Fornara ,  Antonio di-Giacomo ,  Brice Arrazat

    IPC: H01H59/00 ,  H01L27/06 ,  H01L21/822 ,  H01H1/00 ,  B81C1/00 ,  H01H57/00 ,  H01L23/522

    Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

    INTEGRATED CIRCUIT COMPRISING A CAPACITIVE ELEMENT, AND MANUFACTURING METHOD
    152.
    发明申请
    INTEGRATED CIRCUIT COMPRISING A CAPACITIVE ELEMENT, AND MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20190341446A1

    公开(公告)日：2019-11-07

    申请号：US16400286

    申请日：2019-05-01

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Abderrezak MARZAKI

    IPC: H01L49/02 ,  H01L27/11517 ,  H01L29/06

    Abstract: A capacitive element of an integrated circuit includes first and second electrodes. The first electrode is formed by a first electrically conductive layer located above a semiconductor well doped with a first conductivity type. The second electrode is formed by a second electrically conductive layer located above the first electrically conductive layer of the semiconductor well. The second electrode is further formed by a doped surface region within the semiconductor well that is heavily doped with a second conductivity type opposite the first conductivity type, wherein the doped surface region is located under the first electrically conductive layer. An inter-electrode dielectric area electrically separates the first electrode and the second electrode.

    Method for writing in an EEPROM memory and corresponding device
    154.
    发明授权
    Method for writing in an EEPROM memory and corresponding device 有权

    公开(公告)号：US10446235B2

    公开(公告)日：2019-10-15

    申请号：US15984779

    申请日：2018-05-21

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： François Tailliet

    IPC: G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  H01L27/11521 ,  H01L27/11526 ,  H01L29/788

    Abstract: A method can be used for writing in a memory location of the electrically-erasable and programmable memory type. The memory location includes a first memory cell with a first transistor having a first gate dielectric underlying a first floating gate and a second memory cell with a second transistor having a second gate dielectric underlying a second floating gate that is connected to the first floating gate. In a first writing phase, an identical tunnel effect is implemented through the first gate dielectric and the second gate dielectric. In a second writing phase, a voltage across the first gate dielectric but not the second gate dielectric is increased.

    Transmission and Reception Methods for a Binary Signal on a Serial Link
    156.
    发明申请
    Transmission and Reception Methods for a Binary Signal on a Serial Link 审中-公开

    公开(公告)号：US20190296943A1

    公开(公告)日：2019-09-26

    申请号：US16440069

    申请日：2019-06-13

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Christophe Arnal ,  Roland Van Der Tuijn

    IPC: H04L25/02 ,  H04B10/079 ,  G06F13/40

    Abstract: A method can be used for transmission of at least one packet of at least one bit over a serial link capable of taking two different states respectively associated with the two possible logical values of the at least one transmitted bit. Starting from a transmission start time of the at least one bit and up to the expiration of a first portion of a bit time associated with the at least one bit, the link is placed in one of its states depending on the logical value of the at least one bit. Upon the expiration of the first portion of this bit time, a first additional transition is generated over the link so as to place the link in its other state up to the expiration of the bit time.

    METHOD FOR CONTROLLING SCENE DETECTION USING AN APPARATUS
    157.
    发明申请
    METHOD FOR CONTROLLING SCENE DETECTION USING AN APPARATUS 审中-公开

    公开(公告)号：US20190287009A1

    公开(公告)日：2019-09-19

    申请号：US16286133

    申请日：2019-02-26

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Laurent Folliot ,  Pierre Demaj

    IPC: G06N5/04 ,  G06N20/00

    Abstract: An embodiment provides a method for controlling scene detection by a device from among a set of possible reference scenes. The method includes detection of scenes from among the set of possible reference scenes at successive instants of detection using at least one classification algorithm. Each new current detected scene is assigned an initial probability of confidence. The initial probability of confidence is updated depending on a first probability of transition from a previously detected scene to the new current detected scene. A filtering processing operation is performed on these current detected scenes on the basis of at least the updated probability of confidence associated with each new current detected scene. The output of the filtering processing operation successively delivers filtered detected scenes.

    METHOD AND CIRCUIT FOR PERFORMING A SUBSTITUTION OPERATION
    160.
    发明申请
    METHOD AND CIRCUIT FOR PERFORMING A SUBSTITUTION OPERATION 审中-公开

    公开(公告)号：US20190268136A1

    公开(公告)日：2019-08-29

    申请号：US16281889

    申请日：2019-02-21

    Applicant: STMICROELECTRONICS (ROUSSET) SAS

    Inventor： Thomas ORDAS ,  Yanis LINGE

    IPC: H04L9/06 ,  G06F21/72

    Abstract: A cryptographic circuit performs a substitution operation of a cryptographic algorithm. For each substitution operation of the cryptographic algorithm, a series of substitution operations are performed by the cryptographic circuit. One of the substitution operations of the series is a real substitution operation corresponding to the substitution operation of the cryptographic algorithm. One or more other substitution operations of the series are dummy substitution operations. A position of the real substitution operation in said series is selected randomly.

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