公开(公告)号：US20170263783A1

公开(公告)日：2017-09-14

申请号：US15451804

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/78696 ,  G02F1/13338 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US20170162716A1

公开(公告)日：2017-06-08

申请号：US15434153

申请日：2017-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US20170110337A1

公开(公告)日：2017-04-20

申请号：US15295016

申请日：2016-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Yukinori SHIMA

IPC: H01L21/385 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/385 ,  H01L21/46 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device includes the steps of: forming an oxide semiconductor over a first insulator; forming a second insulator over the first insulator and the oxide semiconductor; forming a first conductor over the second insulator; forming an etching mask over the first conductor; forming a second conductor including a region overlapping with the oxide semiconductor by etching the first conductor with use of the etching mask as a mask; removing the etching mask; and performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.

公开(公告)号：US20170104090A1

公开(公告)日：2017-04-13

申请号：US15287085

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi HAMOCHI ,  Takahiro SATO ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L27/146 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133541 ,  G02F2201/121 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04108 ,  G09G3/20 ,  G09G3/2003 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2330/021 ,  G09G2330/028 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869

Abstract: Variation in electrical characteristics of a semiconductor device including an oxide semiconductor is inhibited and the reliability thereof is improved. The oxide semiconductor is formed over a substrate. An insulator is formed over the oxide semiconductor. A metal oxide is formed over the insulator. A conductor is formed over the metal oxide. The conductor, the metal oxide, and the insulator over the oxide semiconductor are removed to expose a portion of the oxide semiconductor. Plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor. A nitride insulator is formed over the exposed portion of the oxide semiconductor and the conductor.

公开(公告)号：US20170054029A1

公开(公告)日：2017-02-23

申请号：US15231061

申请日：2016-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Toshimitsu OBONAI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02653 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device has a first step including a step of forming an oxide semiconductor film, a second step including a step of forming a gate insulating film over the oxide semiconductor film and a step of forming a gate electrode over the gate insulating film, a third step including a step of forming a nitride insulating film over the oxide semiconductor film and the gate electrode, a fourth step including a step of forming an oxide insulating film over the nitride insulating film, a fifth step including a step of forming an opening in the nitride insulating film and the oxide insulating film, and a sixth step including a step of forming source and drain electrodes over the oxide insulating film so as to cover the opening. In the third step, the nitride insulating film is formed through at least two steps: plasma treatment and deposition treatment. The two steps are each performed at a temperature higher than or equal to 150° C. and lower than 300° C.

Abstract translation: 一种半导体器件的制造方法具有：第一工序，包括形成氧化物半导体膜的工序;第二工序，包括在所述氧化物半导体膜上形成栅极绝缘膜的步骤;以及在所述栅极绝缘上形成栅电极的工序; 薄膜，第三步骤，包括在所述氧化物半导体膜和所述栅电极上形成氮化物绝缘膜的步骤，第四步骤，包括在所述氮化物绝缘膜上形成氧化物绝缘膜的步骤，第五步骤，包括形成步骤 氮化物绝缘膜和氧化物绝缘膜中的开口，以及第六步骤，包括在氧化物绝缘膜上形成源极和漏极以便覆盖开口的步骤。 在第三步骤中，通过至少两个步骤形成氮化物绝缘膜：等离子体处理和沉积处理。 两个步骤各自在高于或等于150℃并低于300℃的温度下进行。

公开(公告)号：US20170033238A1

公开(公告)日：2017-02-02

申请号：US15226051

申请日：2016-08-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。

公开(公告)号：US20160284860A1

公开(公告)日：2016-09-29

申请号：US15174197

申请日：2016-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

公开(公告)号：US20160155759A1

公开(公告)日：2016-06-02

申请号：US14946985

申请日：2015-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Hiroshi KANEMURA ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor which includes an oxide semiconductor film and has excellent electrical characteristics. A semiconductor device includes a transistor including a first electrode, a first insulating film over the first electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film. The difference between energy at a conduction band minimum of the first oxide semiconductor film and energy at a conduction band minimum of the second oxide semiconductor film is greater than or equal to 0.2 eV. A rate of change in drain current per unit channel width relative to a drain voltage of 1 V can be less than or equal to 2%.

Abstract translation: 提供包括具有氧化物半导体膜并且具有优异的电特性的晶体管的半导体器件。 半导体器件包括晶体管，其包括第一电极，第一电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及位于第二绝缘膜上的第二电极。 氧化物半导体膜包括第一氧化物半导体膜和第二氧化物半导体膜。 第一氧化物半导体膜的导带最小值处的能量与第二氧化物半导体膜的导带最小值处的能量之差大于或等于0.2eV。 每单位沟道宽度相对于1V的漏极电压的漏极电流的变化率可以小于或等于2％。

公开(公告)号：US20160079089A1

公开(公告)日：2016-03-17

申请号：US14849852

申请日：2015-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Takuya HANDA

IPC: H01L21/477 ,  H01L21/02

CPC classification number: H01L21/477 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a semiconductor device including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The semiconductor device is manufactured by a method including first to fourth steps. The first step includes a step of forming an oxide semiconductor film, the second step includes a step of forming an oxide insulating film over the oxide semiconductor film, the third step includes a step of forming a protective film over the oxide insulating film, and the fourth step includes a step of adding oxygen to the oxide insulating film through the protective film. In the first step, the oxide semiconductor film is formed under a condition in which an oxygen vacancy is formed. The oxygen from the oxide insulating film fills the oxygen vacancy after the fourth step.

Abstract translation: 在包括氧化物半导体的半导体器件中，电特性的变化被抑制，可靠性提高。 半导体器件通过包括第一至第四步骤的方法制造。 第一步骤包括形成氧化物半导体膜的步骤，第二步骤包括在氧化物半导体膜上形成氧化物绝缘膜的步骤，第三步骤包括在氧化物绝缘膜上形成保护膜的步骤， 第四步骤包括通过保护膜向氧化物绝缘膜添加氧的步骤。 在第一步骤中，在形成氧空位的条件下形成氧化物半导体膜。 来自氧化物绝缘膜的氧填充第四步后的氧空位。

公开(公告)号：US20150348998A1

公开(公告)日：2015-12-03

申请号：US14721362

申请日：2015-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Toshimitsu OBONAI

IPC: H01L27/12 ,  H01L21/44

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a transistor which includes an oxide semiconductor film in a channel region. A change from a shift value before light irradiation to a shift value under light irradiation is greater than or equal to −1 V and less than or equal to 0.5 V, where the shift value is a gate voltage at a point of intersection of an axis of 1×10−12 A and a steepest tangent line of the logarithm of a drain current in drain current-gate voltage characteristics of the transistor, and where the light irradiation is performed on the oxide semiconductor film with light having an energy greater than or equal to a band gap of the oxide semiconductor film.

Abstract translation: 提供了在沟道区域中包括氧化物半导体膜的晶体管。 在光照射之前的偏移值到光照射下的移动值的变化大于或等于-1V且小于或等于0.5V，其中移位值是轴的交点处的栅极电压 1×10-12A的最大切线和晶体管的漏极电流 - 栅极电压特性中的漏极电流的对数的最快切线，并且其中用氧化物半导体膜对具有能量大于或等于 等于氧化物半导体膜的带隙。