公开(公告)号：US20090322183A1

公开(公告)日：2009-12-31

申请号：US12488691

申请日：2009-06-22

Applicant: Takashi Kawakubo ,  Toshihiko Nagano ,  Michihiko Nishigaki

Inventor： Takashi Kawakubo ,  Toshihiko Nagano ,  Michihiko Nishigaki

IPC: G01P15/09

CPC classification number: G01P15/09 ,  G01C19/5621 ,  G01C19/5628 ,  G01C19/5656 ,  G01P15/0922 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828

Abstract: An inertial sensor includes a first beam, a first proof mass section and a first upper surface stopper section. The first beam extends in a first direction in a plane parallel to a major surface of a substrate and is held with a spacing from the major surface of the substrate. The first beam has a first detecting section including a first upper side electrode, a first lower side electrode, and a first upper side piezoelectric film provided between the first upper side electrode and the first lower side electrode. The first beam has one end connected to the major surface of the substrate. The first proof mass section is connected to the other end of the first beam and held with a spacing from the major surface of the substrate. The first upper surface stopper section is provided on the opposite side of the first proof mass section from the substrate with a spacing from the first proof mass section.

Abstract translation: 惯性传感器包括第一光束，第一检测质量部分和第一上表面阻挡部分。 第一光束在与基板的主表面平行的平面中沿第一方向延伸，并且与基板的主表面保持间隔。 第一光束具有包括设置在第一上侧电极和第一下侧电极之间的第一上侧电极，第一下侧电极和第一上侧压电膜的第一检测部。 第一光束的一端连接到基板的主表面。 第一检测质量部分连接到第一光束的另一端并且与衬底的主表面间隔保持。 第一上表面止动部分设置在第一检验质量部分的与第一检验质量部分间隔开的基板的相对侧上。

公开(公告)号：US20090305439A1

公开(公告)日：2009-12-10

申请号：US12522786

申请日：2008-10-30

Applicant: Akio Morii

Inventor： Akio Morii

IPC: H01L21/66 ,  H01L21/302

CPC classification number: G01P15/125 ,  G01C19/5719 ,  G01C25/00 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828 ,  G01P2015/0842

Abstract: A method for correcting a mask pattern used for dry-etching an object with higher accuracy, and for manufacturing an acceleration sensor and an angular velocity sensor. The object is first etched by a dry-etching process using an uncorrected reference mask pattern. Then, distribution of the size of expansion of a tapered portion formed in a surface of the object is measured. Thereafter, the measured distribution is approximated by using a quadratic curve (Y=AX2+B) so as to determine A and B. Consequently, an amount t of correction for the tapered portion, which is expressed by the following equation (1) and related to a width of an opening of the mask pattern in a position at a distance r from a center of the object to be etched, can be set. In this way, the correction for the tapered portion can be carried out. t=(Ar2+B)/2  (1)

Abstract translation: 一种用于校正用于以更高精度对物体进行干法蚀刻的掩模图案，以及用于制造加速度传感器和角速度传感器的方法。 首先通过使用未校正的参考掩模图案的干蚀刻工艺蚀刻该物体。 然后，测量形成在物体的表面中的锥形部分的膨胀尺寸的分布。 此后，通过使用二次曲线（Y = AX2 + B）近似测量分布，以便确定A和B.因此，由下式（1）表示的锥形部分的校正量t和 可以设置与距离被蚀刻物的中心距离r的位置处的掩模图案的开口的宽度。 以这种方式，可以进行锥形部的校正。 t =（Ar2 + B）/ 2（1）

公开(公告)号：US20090235745A1

公开(公告)日：2009-09-24

申请号：US12050854

申请日：2008-03-18

Applicant: Paul Dwyer

Inventor： Paul Dwyer

IPC: G01P15/13

CPC classification number: G01P15/132 ,  G01P15/11 ,  G01P2015/0828

Abstract: Systems and methods for minimizing vibration rectification error in magnetic circuit accelerometers. The systems include an accelerometer with an excitation ring that has a top piece with a lower portion inner diameter and a bottom piece having a diameter smaller than the lower portion inner diameter of the top piece. The accelerometer also includes a proof mass, a magnet mounted to the bottom piece of the excitation ring, a pole piece mounted to the magnet, and a coil attached to the proof mass that extends into a gap between the top piece of the excitation ring and the pole piece. The methods include placing a pole piece in a pole piece to lap surface fixture, placing an excitation ring top piece on an outer portion of the pole piece to lap surface fixture, and placing an excitation ring bottom piece in a lower portion of the excitation ring top piece.

Abstract translation: 减小磁路加速度计振动整流误差的系统和方法。 这些系统包括具有激励环的加速度计，该激励环具有下部内径的顶部件和具有小于顶部件的下部内径的直径的底部件。 加速度计还包括检测质量块，安装在激励环底部的磁体，安装在磁体上的磁极片，以及附着在检测质量块上的线圈，该线圈延伸到激励环的顶部片段和 极片。 所述方法包括将极片放置在搭接表面固定装置的极片上，将励磁环顶部件放置在极靴的外部部分以搭接表面固定装置，并将激励环底部件放置在激励环的下部 顶级作品

公开(公告)号：US07533570B2

公开(公告)日：2009-05-19

申请号：US11278904

申请日：2006-04-06

Applicant: Yasuo Yamaguchi ,  Makio Horikawa ,  Mika Okumura ,  Kimitoshi Satou

Inventor： Yasuo Yamaguchi ,  Makio Horikawa ,  Mika Okumura ,  Kimitoshi Satou

IPC: G01P15/125 ,  G01P21/00

CPC classification number: G01P15/125 ,  B81B3/0008 ,  B81B7/0077 ,  B81B2201/0235 ,  G01P1/023 ,  G01P2015/0828

Abstract: In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.

Abstract translation: 在静电电容式加速度传感器中，渗入包含具有可动电极6的加速度检测器的密封空间中的水等，以及由于静电电荷积聚在盖8上而将可动电极6粘附到盖8上 防止进行阳极接合。 提供了可以在构成密封空间的盖8的整个内表面上扩展变形的导电屏蔽膜9，其不仅被延伸地布置成夹在接合框架7和盖8之间，而且电连接 连接到可动电极6; 因此，即使在接合框架7的表面上存在不均匀性，不仅可以在接合框架7和盖8之间进行足够的阳极接合，而且可以屏蔽由于积聚在盖8中的静电荷引起的电场 。

公开(公告)号：US20090064780A1

公开(公告)日：2009-03-12

申请号：US12208980

申请日：2008-09-11

Applicant: Luca Coronato ,  Alessandro Balzelli Ludovico ,  Sarah Zerbini

Inventor： Luca Coronato ,  Alessandro Balzelli Ludovico ,  Sarah Zerbini

IPC: G01P15/14

CPC classification number: G01C19/5712 ,  G01P15/125 ,  G01P15/14 ,  G01P15/18 ,  G01P2015/0828

Abstract: A driving mass of an integrated microelectromechanical structure is moved with a rotary motion about an axis of rotation, and a sensing mass is connected to the driving mass via elastic supporting elements so as to perform a detection movement in the presence of an external stress. The driving mass is anchored to a first anchorage arranged along the axis of rotation by first elastic anchorage elements. The driving mass is also coupled to a pair of further anchorages positioned externally thereof and coupled to opposite sides with respect to the first anchorage by further elastic anchorage elements; the elastic supporting elements and the first and further elastic anchorage elements render the driving mass fixed to the first sensing mass in the rotary motion, and substantially decoupled from the sensing mass in the detection movement, the detection movement being a rotation about an axis lying in a plane.

Abstract translation: 集成微电子机械结构的驱动质量以围绕旋转轴线的旋转运动移动，并且感测质量块经由弹性支撑元件连接到驱动质量块，以便在存在外部应力的情况下执行检测运动。 驱动质量块被锚固到通过第一弹性锚固元件沿着旋转轴线布置的第一锚固件。 驱动质量体还连接到位于其外部的一对另外的锚固件，并且通过另外的弹性锚定元件相对于第一锚固件相对于相对侧联接; 弹性支撑元件和第一和另外的弹性锚固元件使得驱动质量在旋转运动中固定到第一感测块，并且在检测运动中基本上与感测质量分离，检测运动是围绕位于 一架飞机。

公开(公告)号：US07481112B2

公开(公告)日：2009-01-27

申请号：US11240804

申请日：2005-09-30

Applicant: Eun Sok Kim ,  Qiang Zou

Inventor： Eun Sok Kim ,  Qiang Zou

IPC: G01P15/12 ,  G01P9/04

CPC classification number: G01C19/5719 ,  G01C19/56 ,  G01C19/5621 ,  G01C19/5628 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/123 ,  G01P15/18 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49004 ,  Y10T29/49007

Abstract: A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane.

Abstract translation: MEMS硅惯性传感器由质量块形成，该质量块被支撑和约束以仅以指定的方式振动。 传感器可以从支持单独优化，以调整灵敏度与带宽分开。 传感器可以三维感测，或只能在单个平面中感知。

公开(公告)号：US07430909B2

公开(公告)日：2008-10-07

申请号：US11600175

申请日：2006-11-16

Applicant: Scott G. Adams ,  Scott A. Miller ,  June Shen-Epstein ,  Keith Epstein

Inventor： Scott G. Adams ,  Scott A. Miller ,  June Shen-Epstein ,  Keith Epstein

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/0828

Abstract: In an embodiment of the present invention there is provided a micro-electromechanical (MEMS) accelerometer, including a substrate, a first sensor and a second sensor. The first sensor is configured to measure an acceleration along a first axis parallel to a plane of the substrate. The second sensor is configured to measure an acceleration along an axis perpendicular to the plane of the substrate. The second sensor comprises a first beam, a second beam and a single support structure. The single support structure supports the first and second beams relative to the substrate, wherein the first and second beams circumscribe the first sensor.

Abstract translation: 在本发明的一个实施例中，提供了一种包括基板，第一传感器和第二传感器的微机电（MEMS）加速度计。 第一传感器被配置为测量沿着平行于衬底的平面的第一轴的加速度。 第二传感器被配置成沿垂直于基板的平面的轴测量加速度。 第二传感器包括第一梁，第二梁和单个支撑结构。 单个支撑结构相对于基板支撑第一和第二光束，其中第一和第二光束围绕第一传感器。

公开(公告)号：US07407827B2

公开(公告)日：2008-08-05

申请号：US11210006

申请日：2005-08-23

Applicant: Tetsuo Fujii ,  Masahito Imai

Inventor： Tetsuo Fujii ,  Masahito Imai

IPC: H01L21/00

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US07371601B2

公开(公告)日：2008-05-13

申请号：US11127457

申请日：2005-05-12

Applicant: David B. Rich ,  Steven M. Crist

Inventor： David B. Rich ,  Steven M. Crist

IPC: H01L21/00 ,  G01P15/00

CPC classification number: B81C1/00142 ,  B81B2201/0235 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/016 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

Abstract: A technique for manufacturing a piezoresistive sensing structure includes a number of process steps. Initially, a piezoresistive element is implanted into a first side of an assembly that includes a semiconductor material. A passivation layer is then formed on the first side of the assembly over the element. The passivation layer is then removed from selected areas on the first side of the assembly. A first mask is then provided on the passivation layer in a desired pattern. A beam, which includes the element, is then formed in the assembly over at least a portion of the assembly that is to provide a cavity. The passivation layer provides a second mask, in the formation of the beam, that determines a width of the formed beam.

Abstract translation: 制造压阻感测结构的技术包括多个工艺步骤。 最初，将压阻元件植入包括半导体材料的组件的第一侧。 然后在元件的组件的第一侧上形成钝化层。 然后从组件的第一侧上的选定区域去除钝化层。 然后以期望的图案在钝化层上提供第一掩模。 包括元件的梁然后在组件中形成在组件的至少一部分上以提供空腔。 钝化层在形成光束时提供第二掩模，其确定形成的光束的宽度。

公开(公告)号：US20080053229A1

公开(公告)日：2008-03-06

申请号：US11848301

申请日：2007-08-31

Applicant: Bishnu Gogoi ,  Navid Yazdi

Inventor： Bishnu Gogoi ,  Navid Yazdi

IPC: G01P15/125 ,  H01R43/00

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10T29/49117

Abstract: A three-axis inertial sensor and a process for its fabrication using an silicon-on-oxide (SOI) wafer as a starting material. The SOI wafer has a first conductive layer separated from a second conductive layer by an insulative buried oxide (BOX) layer. The SOI wafer is fabricated to partially define in its first conductive layer at least portions of proof masses for z, x, and y-axis sensing devices of the sensor. After a conductive deposited layer is deposited and patterned to form a suspension spring for the proof mass of the z-axis sensing device, the SOI wafer is bonded to a substrate that preferably carries interface circuitry for the z, x, and y-axis devices, with the SOI wafer being oriented so that its first conductive layer faces the substrate. Portions of the BOX layer are then etched to fully release the proof masses.

Abstract translation: 三轴惯性传感器及其使用硅氧化物（SOI）晶片作为起始材料的制造方法。 SOI晶片具有通过绝缘掩埋氧化物（BOX）层与第二导电层分离的第一导电层。 制造SOI晶片以在其第一导电层中部分地限定传感器的z，x和y轴感测装置的至少一部分证明质量。 在沉积导电沉积层并图案化以形成用于z轴感测装置的检验质量块的悬浮弹簧之后，SOI晶片被结合到衬底，该衬底优选地承载用于z轴，x轴和y轴装置的接口电路 ，其中SOI晶片被定向成使得其第一导电层面向衬底。 然后蚀刻BOX层的部分以完全释放证明质量。