公开(公告)号：US20060102952A1

公开(公告)日：2006-05-18

申请号：US11272638

申请日：2005-11-14

Applicant: Chang-Hyun Lee

Inventor： Chang-Hyun Lee

IPC: H01L29/792

CPC classification number: H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11573 ,  H01L29/66833

Abstract: A non-volatile memory device comprises a cell region defined at a substrate and a plurality of device isolation layers formed in the cell region to define a plurality of active regions. A charge storage insulator covers substantially the entire top surface of the cell region. A plurality of gate lines are formed on the charge storage insulator that cross over the device isolation layers. Conductive patterns are disposed between predetermined gate lines that penetrate the charge storage insulator to electrically connect with the active regions. According to the method of fabricating the device, a plurality of device isolation layers are formed in the substrate and then a charge storage insulator is formed on an entire surface of the substrate and the device isolation layers. A plurality of parallel gate lines that cross over the device isolation layers are formed on the charge storage insulator and then conductive patterns are formed between predetermined gate lines. The conductive patterns penetrate the charge storage insulator and electrically connect with the active regions.

公开(公告)号：US07041554B2

公开(公告)日：2006-05-09

申请号：US10455679

申请日：2003-06-05

Applicant: Chang-Hyun Lee ,  Dong-Gun Park

Inventor： Chang-Hyun Lee ,  Dong-Gun Park

IPC: H01L21/336

CPC classification number: H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/7885 ,  H01L29/792

Abstract: Flash memory devices are provided including an integrated circuit substrate and a stack gate structure on the integrated circuit substrate. A trench isolation region is provided on the integrated circuit substrate adjacent the stack gate structure. A portion of the stack gate structure adjacent a trench sidewall of the trench isolation region may include a first nitrogen doped layer.

Abstract translation: 在集成电路基板上提供包括集成电路基板和堆叠栅极结构的闪存器件。 沟槽隔离区域设置在与堆叠栅极结构相邻的集成电路基板上。 与沟槽隔离区的沟槽侧壁相邻的堆叠栅极结构的一部分可以包括第一氮掺杂层。

公开(公告)号：US06991986B2

公开(公告)日：2006-01-31

申请号：US10951476

申请日：2004-09-27

Applicant: Chang-Hyun Lee

Inventor： Chang-Hyun Lee

IPC: H01L21/336

CPC classification number: H01L29/513 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792

Abstract: A lower insulation layer, a charge storing layer, and an upper insulation layer are sequentially stacked on a substrate to form a gate insulation layer. A gate conductive layer is formed on the gate insulation layer. The gate electrode is patterned to expose a surface of the gate insulation layer. The charge storing layer is a barrier layer to oxygen diffusion during oxidization for curing etching damages caused by patterning. Thus, a gate bird's beak is prevented in the lower insulation layer. Spacers are formed on sidewalls of the gate electrode. The upper insulation layer is etched using the gate electrode and the spacers as an etch mask. Impurity ions are implanted into the substrate adjacent to the gate electrode to form an impurity region. Since an upper insulation layer is not exposed during the ion implantation process, the upper insulation layer is not damaged.

公开(公告)号：US20050076738A1

公开(公告)日：2005-04-14

申请号：US10911724

申请日：2004-08-04

Applicant: Chang-Hyun Lee

Inventor： Chang-Hyun Lee

IPC: B60T7/06 ,  B60R21/09 ,  G05G1/30 ,  G05G1/327 ,  G05G1/14

CPC classification number: G05G1/30 ,  G05G1/327 ,  G05G1/60 ,  Y10T74/20528 ,  Y10T74/20888

Abstract: The present invention is disclosed to maintain a stable installation state of a brake pedal under normal conditions and to automatically release a fixed state of the brake pedal when the pedal receives a thrusting force from a vehicle collision to thereby transmit that impact toward the driver, thus preventing the pedal from impacting the driver and minimizing injury to the driver.

Abstract translation: 本发明被公开以在正常条件下保持制动踏板的稳定的安装状态，并且当踏板接收到来自车辆碰撞的推力而自动释放制动踏板的固定状态，从而将该冲击传递给驾驶员，因此 防止踏板撞击驾驶员并尽量减少对驾驶员的伤害。

公开(公告)号：US20050037575A1

公开(公告)日：2005-02-17

申请号：US10951476

申请日：2004-09-27

Applicant: Chang-Hyun Lee

Inventor： Chang-Hyun Lee

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/51 ,  H01L29/792 ,  H01L21/336

CPC classification number: H01L29/513 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792

Abstract: A lower insulation layer, a charge storing layer, and an upper insulation layer are sequentially stacked on a substrate to form a gate insulation layer. A gate conductive layer is formed on the gate insulation layer. The gate electrode is patterned to expose a surface of the gate insulation layer. The charge storing layer is a barrier layer to oxygen diffusion during oxidization for curing etching damages caused by patterning. Thus, a gate bird's beak is prevented in the lower insulation layer. Spacers are formed on sidewalls of the gate electrode. The upper insulation layer is etched using the gate electrode and the spacers as an etch mask. Impurity ions are implanted into the substrate adjacent to the gate electrode to form an impurity region. Since an upper insulation layer is not exposed during the ion implantation process, the upper insulation layer is not damaged.

Abstract translation: 依次将下绝缘层，电荷存储层和上绝缘层堆叠在基板上以形成栅极绝缘层。 在栅极绝缘层上形成栅极导电层。 图案化栅极以暴露栅极绝缘层的表面。 电荷存储层是氧化期间氧扩散的阻挡层，用于固化由图案化引起的蚀刻损伤。 因此，在下绝缘层中防止了门鸟的喙。 隔板形成在栅电极的侧壁上。 使用栅电极和间隔物作为蚀刻掩模蚀刻上绝缘层。 将杂质离子注入到与栅电极相邻的衬底中以形成杂质区。 由于在离子注入过程中不会暴露上绝缘层，所以上绝缘层不被损坏。

公开(公告)号：US06818510B2

公开(公告)日：2004-11-16

申请号：US10704285

申请日：2003-11-06

Applicant: Chang-Hyun Lee ,  Jung-Dal Choi ,  Byung-Kwan You ,  Sung-Hoi Hur

Inventor： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byung-Kwan You ,  Sung-Hoi Hur

IPC: H01L21336

CPC classification number: H01L27/11568 ,  H01L27/115

Abstract: A non-volatile memory device and fabrication method thereof are provided. A floating region is formed on an active region on a substrate. Trenches define the active region. The floating region is made of an ONO layer. A gate electrode is formed on the floating region. A mask is formed on the gate electrode. A thermal oxidation is performed to make a sidewall oxide and a trench oxide on the sidewall of the gate electrode and the trench, respectively. As a result, the widths of the gate electrode and the active region become less than the width of the floating region, thereby forming protrusions at ends of the floating region. Isolation regions are formed in the trenches and include the sidewall oxide and the trench oxide. The isolation regions surround the protrusions. As a result, electric field induced on the sidewall of the floating region is decreased. Moreover, the thermal oxidation cures any damage to the sidewalls of the floating region. Accordingly, leakage current can be substantially suppressed at the boundary region between the isolation region and the floating region.

公开(公告)号：US06781193B2

公开(公告)日：2004-08-24

申请号：US10215504

申请日：2002-08-09

Applicant: Chang-Hyun Lee ,  Jung-Dal Choi ,  Wang-Chul Shin

Inventor： Chang-Hyun Lee ,  Jung-Dal Choi ,  Wang-Chul Shin

IPC: H01L29792

CPC classification number: H01L29/513 ,  H01L21/28194 ,  H01L21/28202 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L29/518 ,  H01L29/792

Abstract: A non-volatile memory device includes a cell region having a memory gate pattern with a charge storage layer, and a peripheral region having a high-voltage-type gate pattern, a low-voltage-type gate pattern, and a resistor pattern. To fabricate the above memory device, a device isolation layer is formed in a substrate. Gate insulating layers having difference thickness are formed in low-and high-voltage regions of the peripheral region, respectively. A first conductive layer is formed over substantially the entire surface of a gate insulating layer in the peripheral region. A triple layer including a tunneling insulating layer, a charge storage layer, and a blocking insulating layer and a second conductive layer are sequentially formed over substantially the entire surface of the substrate including the first conductive layer.

公开(公告)号：US06674235B2

公开(公告)日：2004-01-06

申请号：US10112888

申请日：2002-04-01

Applicant: Keong-Su Lim ,  Duk-Young Jeon ,  Chang-Hyun Lee ,  Sang-Su Kim

Inventor： Keong-Su Lim ,  Duk-Young Jeon ,  Chang-Hyun Lee ,  Sang-Su Kim

IPC: H01J4006

CPC classification number: H01J1/34 ,  H01J40/06

Abstract: A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected. By using the protective layer, the processes subsequent to the photoelectric face plate deposition process can be freely performed in the atmosphere, to thereby simplify the whole process. As a result, a production cost is lowered, and manufacturing of a device or apparatus using a large-are photocathode is facilitated.

Abstract translation: 一种具有光电面板保护层的光电阴极结构，为了防止光电效应由于氧气相对于大多数现有光电面板材料而产生的高反应，当用于通过光电面板产生光电子的光电面板 提供光电效应暴露在大气中。 例如，使用类金刚石碳薄膜作为光电阴极保护层，由此通过将光电面板与大气隔离来实现保护光电面板的功能，并且能够使从光电面板产生的电子 通过通过隧道效应薄沉积的类金刚石碳薄层，使得光电阴极的性能不受影响。 通过使用保护层，可以在大气中自由进行光电面板沉积处理之后的处理，从而简化整个处理。 结果，降低了制造成本，并且促进了使用大的光电阴极的装置或装置的制造。

公开(公告)号：US06638153B2

公开(公告)日：2003-10-28

申请号：US09887216

申请日：2001-06-22

Applicant: Chang Hyun Lee ,  Youn Chul Kim

Inventor： Chang Hyun Lee ,  Youn Chul Kim

IPC: B23F2103

CPC classification number: B24D18/0009 ,  B24D3/06 ,  B24D5/123 ,  B28D1/121

Abstract: The invention relates to a diamond saw blade which is made by attaching improved undercut preventing tips, produced by diffusing and joining cobalt-based powder onto ultra hard tips at a high temperature, to respective shank slot walls formed on the circumference of a diamond saw blade by means of laser welding in order to remove drawbacks of high cost or insecurity with the conventional art. According to the present invention, there is proposed a diamond saw blade with a shank, and with plural diamond tips provided on the circumference of the shank at a finite interval, slots for discharging cut chips being positioned between the adjoining diamond tips, further comprising undercut preventing tips disposed on respective walls of said slots, said undercut preventing tips including tungsten-carbide-based ultra hard tips provided with cobalt-based layer, wherein said undercut preventing tips are formed by diffusing and joining the cobalt-based powder to said ultra hard tips at a high temperature and said undercut preventing tips are fixed on respective walls of said slots by means of laser welding.

Abstract translation: 本发明涉及一种金刚石锯片，该金刚石锯片通过将改进的防切削尖端附着在金刚石锯片的圆周上的相应的柄槽壁上，将尖端扩散并将钴基粉末在高温下连接到超硬尖端上而制成 通过激光焊接，以消除常规技术的高成本或不安全的缺点。根据本发明，提出了一种具有柄的金刚石锯片，并且在柄的圆周上设置有多个金刚石尖端， 有限间隔，用于将切割的芯片放置在相邻的金刚石尖端之间的槽，还包括设置在所述槽的相应壁上的防切削尖端，所述底切防止端头包括提供有钴基层的基于碳化钨的超硬尖端， 其特征在于，所述防止底切的尖端通过以高温度扩散并连接到所述超硬尖端而形成 并且所述防切削尖端通过激光焊接固定在所述槽的相应壁上。

公开(公告)号：US06526959B1

公开(公告)日：2003-03-04

申请号：US09464336

申请日：1999-12-15

Applicant: Chang Hyun Lee ,  Hyun Seok Choi

Inventor： Chang Hyun Lee ,  Hyun Seok Choi

IPC: B28D104

CPC classification number: B24D5/12 ,  B23D61/026 ,  B23D61/028 ,  B23D65/00 ,  C09J7/21 ,  C09J7/30 ,  C09J2400/263 ,  C09J2400/283 ,  C09J2421/00 ,  C09J2461/00 ,  C09J2463/00

Abstract: An adhesive sheet for noise and shock absorption and a saw blade making use of it and manufacturing methods therefor for use in joining components of a cutting or grinding apparatus to generate vibrations and noises such as a cutting saw machine for a grinding or cutting material such as brick, concrete, granite, marble, etc. The adhesive sheet according to the present invention is composed of a resin adhesive such as denaturalized epoxy resin, phenol resin, rubber, or compound composition thereof etc., and a noise and shock absorption material infiltrated with the resin adhesive, and fabricated by infiltrating the noise and shock absorption material such as non-woven fabric, paper, or textiles with the resin adhesive such as denaturalized epoxy resin, phenol resin, rubber, or compound composition thereof etc., and drying the infiltrated noise and shock absorption material at a predetermined temperature for several minutes and hardening it by half. The saw blade for use in the cutting or grinding apparatus of the present invention is composed of a wheel body for connecting with a shaft of an electric motor having upper and lower wheel portions, and an adhesive sheet layer including a noise and shock absorption material disposed between upper and lower wheel portions of the wheel body, and fabricated by positioning the adhesive sheet for noise and shock absorption between upper and lower wheel portions of the wheel body, and hardening wheel portions and the adhesive sheet therebetween at a predetermined temperature and pressure for given times.

Abstract translation: 用于噪声和减震的粘合片和使用它的锯片及其制造方法用于连接切割或研磨装置的部件以产生振动和噪声，例如用于研磨或切割材料的切割锯机 砖，混凝土，花岗石，大理石等。本发明的粘合片由变性环氧树脂，酚醛树脂，橡胶或其化合物组合物等树脂粘合剂组成，并且渗透的噪声和减震材料 与树脂粘合剂一起通过用诸如变性环氧树脂，酚醛树脂，橡胶或其化合物组合物等树脂粘合剂渗透诸如无纺织物，纸或纺织品的噪声和减震材料制成，并干燥 渗透的噪音和减震材料在预定温度下几分钟，并将其硬化一半。用于切割o的锯片 本发明的研磨装置由用于与具有上轮和下轮部的电动机的轴连接的车轮主体和包括设置在所述车轮上下车轮部分之间的噪声和减震材料的粘合片层组成 轮体，并且通过在轮体的上下轮部分之间定位用于噪声和减震的粘合片，并且在预定的温度和压力下给定时间来制造硬化轮部分和其间的粘合片。