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277 条记录 (耗时 0.021 秒)

    Thin film transistor array panel for liquid crystal display and method for repairing the same
    163.
    发明授权
    Thin film transistor array panel for liquid crystal display and method for repairing the same 有权
    用于液晶显示器的薄膜晶体管阵列面板及其修复方法

    公开(公告)号：US06441401B1

    公开(公告)日：2002-08-27

    申请号：US09527803

    申请日：2000-03-17

    申请人： Cheol-Soo Jung ,  Young-Sun Kim ,  Ho-Joon Lee ,  Yeong-Hwan Cho ,  Hyeon-Hwan Kim ,  Bung-Hyuk Min ,  Woon-Yong Park ,  Il-Gon Kim ,  Jang-Soo Kim ,  Jin-Oh Kwag ,  Seog-Chae Lee

    发明人： Cheol-Soo Jung ,  Young-Sun Kim ,  Ho-Joon Lee ,  Yeong-Hwan Cho ,  Hyeon-Hwan Kim ,  Bung-Hyuk Min ,  Woon-Yong Park ,  Il-Gon Kim ,  Jang-Soo Kim ,  Jin-Oh Kwag ,  Seog-Chae Lee

    IPC分类号： H01L2900

    CPC分类号： G02F1/136259 ,  G02F2001/136263 ,  G02F2001/136272 ,  H01L27/12

    摘要： A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line. A redundant repair line overlaps and is insulated from the storage wire at one end and overlaps the storage wire or the gate wire of a neighboring pixel at the other end is formed in the same layer as the data wire. Also, a storage wire connection portion connecting the storage wires of a neighboring pixel is formed in the same layer as the pixel electrode. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.

    摘要翻译： 在绝缘基板上形成沿水平方向延伸的栅极线，并且垂直于限定矩阵阵列的像素的栅极线形成数据线。 通过数据线接收图像信号的像素电极形成在像素中，并且形成具有连接到栅极线的栅电极，连接到数据线的源电极和连接到像素电极的漏电极的薄膜晶体管 在栅极线和数据线相交的部分。 包括在水平方向上存储电极线的存储线，连接到存储电极线的存储电极以及连接相邻像素的存储电极的至少一个存储电极连接部分沿与栅极线相同的方向形成。 冗余维修线在一端重叠并与存储线绝缘，并与存储线重叠，另一端的相邻像素的栅极线形成在与数据线相同的层中。 此外，连接相邻像素的存储线的存储线连接部分形成在与像素电极相同的层中。 在这种结构中，如果栅极线或数据线的部分断开，与断开的线，存储线和冗余修复线重叠的部分短路以修复开路的线缺陷。

    Semiconductor device fabrication system
    164.
    发明授权
    Semiconductor device fabrication system 失效
    半导体器件制造系统

    公开(公告)号：US06398430B1

    公开(公告)日：2002-06-04

    申请号：US09634999

    申请日：2000-08-08

    申请人： Gyu-chan Jeoung ,  Kwang-seok Choi ,  Jin-hang Jung ,  Young-sun Kim ,  Hong Lee ,  Hoe-sik Chung ,  Sung-ho Lee ,  Hun-hwan Ha

    发明人： Gyu-chan Jeoung ,  Kwang-seok Choi ,  Jin-hang Jung ,  Young-sun Kim ,  Hong Lee ,  Hoe-sik Chung ,  Sung-ho Lee ,  Hun-hwan Ha

    IPC分类号： G03D500

    CPC分类号： G03F7/40 ,  G03F7/2024 ,  H01L21/308

    摘要： A semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking and flow baking unit for cross-linking the photoresist pattern and subsequently flow baking the cross-linked photoresist pattern, wherein the cross-linking and flow baking unit thermally stabilizes the photoresist pattern prior to flow baking.

    摘要翻译： 一种用于在半导体器件图案形成中在光致抗蚀剂图案上进行UV烘烤的半导体器件制造系统包括用特定光致抗蚀剂涂覆晶片的光致抗蚀剂涂覆单元; 在涂有光致抗蚀剂的晶片上形成光刻胶图案的显影单元; 以及交联和流动烘烤单元，用于交联光致抗蚀剂图案，随后流动烘烤交联的光致抗蚀剂图案，其中交联和流动烘焙单元在流动烘烤之前热稳定光致抗蚀剂图案。

    Methods for forming capacitor structures including etching pits
    165.
    发明授权
    Methods for forming capacitor structures including etching pits 失效
    用于形成包括蚀刻坑的电容器结构的方法

    公开(公告)号：US06194263B1

    公开(公告)日：2001-02-27

    申请号：US08729232

    申请日：1996-10-09

    申请人： Young-sun Kim ,  Young-wook Park

    发明人： Young-sun Kim ,  Young-wook Park

    IPC分类号： H01L218242

    CPC分类号： H01L28/84 ,  H01L27/10852 ,  H01L28/90

    摘要： A method for forming an electrode structure includes the steps of forming a conductive electrode on the microelectronic substrate, forming HSG-silicon seeds on the surface of the conductive electrode, and etching the conductive electrode using the HSG-silicon seeds as a mask so that pits are formed between the HSG-silicon seeds. In addition, the HSG-silicon seeds on the conductive electrode can be grown to form enlarged HSG-silicon bumps on the conductive electrode further increasing the surface area thereof. Related structures are also discussed.

    摘要翻译： 一种形成电极结构的方法包括以下步骤：在微电子衬底上形成导电电极，在导电电极的表面上形成HSG-硅晶种，并使用HSG-硅晶种作为掩模蚀刻导电电极，使得凹坑 形成在HSG-硅种子之间。 此外，导电电极上的HSG-硅晶种可以生长以在导电电极上形成扩大的HSG-硅凸块，进一步增加其表面积。 还讨论了相关结构。

    Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers
    166.
    发明授权
    Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers 失效
    形成包括保护层的半球形硅（HSG-Si）电容器结构的方法

    公开(公告)号：US6004858A

    公开(公告)日：1999-12-21

    申请号：US988858

    申请日：1997-12-11

    申请人： Se-jin Shim ,  Young-sun Kim ,  Cha-young Yoo ,  Young-wook Park

    发明人： Se-jin Shim ,  Young-sun Kim ,  Cha-young Yoo ,  Young-wook Park

    IPC分类号： H01L21/02 ,  H01L21/20

    CPC分类号： H01L28/84

    摘要： A method of forming a capacitor structure includes the steps of forming a conductive layer on a microelectronic substrate, and forming a first hemispherical grained silicon layer on the conductive layer opposite the substrate. A protective layer is formed on the hemispherical grained silicon layer. The protective layer, the first hemispherical grained silicon layer, and the conductive layer are then patterned so that portions of the microelectronic substrate are exposed adjacent the patterned conductive layer. A second hemispherical grained silicon layer is formed on the surface of the protective layer opposite the first hemispherical grained silicon layer, on sidewalls of the patterned conductive layer, and on the exposed portions of the microelectronic substrate. Portions of the second hemispherical grained silicon layer are removed from the exposed portions of the microelectronic substrate, and the patterned protective layer is then removed.

    摘要翻译： 一种形成电容器结构的方法包括以下步骤：在微电子衬底上形成导电层，并在与衬底相对的导电层上形成第一半球晶粒硅层。 在半球状粒状硅层上形成保护层。 然后对保护层，第一半球形晶粒硅层和导电层进行构图，使得微电子衬底的部分暴露在图案化导电层附近。 在保护层的与第一半球状粒状硅层相对的表面上，在图案化的导电层的侧壁上，以及微电子衬底的露出部分上形成第二半球状粒状硅层。 从微电子衬底的暴露部分去除第二半球形硅层的一部分，然后去除图案化的保护层。

    METHOD AND SYSTEM FOR COMPLETING SCHEDULE INFORMATION, AND COMPUTER-READABLE RECORDING MEDIUM HAVING RECORDED THEREON PROGRAM FOR EXECUTING THE METHOD
    169.
    发明申请
    METHOD AND SYSTEM FOR COMPLETING SCHEDULE INFORMATION, AND COMPUTER-READABLE RECORDING MEDIUM HAVING RECORDED THEREON PROGRAM FOR EXECUTING THE METHOD 审中-公开
    用于完成时间表信息的方法和系统，以及具有记录的程序用于执行方法的计算机可读记录介质

    公开(公告)号：US20130205253A1

    公开(公告)日：2013-08-08

    申请号：US13612256

    申请日：2012-09-12

    申请人： Jong-hyun RYU ,  Nam-wook Kang ,  Sin-ae Kim ,  Young-sun Kim ,  Seung-eok Choi

    发明人： Jong-hyun RYU ,  Nam-wook Kang ,  Sin-ae Kim ,  Young-sun Kim ,  Seung-eok Choi

    IPC分类号： G06F17/30 ,  G06F3/048

    CPC分类号： G06Q10/109

    摘要： Methods and apparatus are provided for completing schedule information. A device displays keyword information corresponding to at least one piece of character information, and at least one piece of recommended schedule information selected from a plurality of domains and having a correlation with the keyword information, in response to inputting the at least one piece of character information. Schedule information is automatically completed according to at least a selection of a piece of recommended schedule information from the displayed at least one piece of recommended schedule information.

    摘要翻译： 提供了方法和装置来完成时间表信息。 响应于输入至少一个字符，设备显示对应于至少一个字符信息的关键字信息，以及从多个域中选择并与关键字信息相关的至少一条推荐调度信息 信息。 根据所显示的至少一条推荐的时间表信息，至少根据一条推荐的时间表信息的选择自动完成计划信息。

    APPARATUS AND METHOD FOR SETTING AUTO CONNECTION OF SENSOR NODE BASED ON SENSOR DATA
    170.
    发明申请
    APPARATUS AND METHOD FOR SETTING AUTO CONNECTION OF SENSOR NODE BASED ON SENSOR DATA 审中-公开
    基于传感器数据设置传感器节点自动连接的装置和方法

    公开(公告)号：US20130124736A1

    公开(公告)日：2013-05-16

    申请号：US13614462

    申请日：2012-09-13

    申请人： Il Kyun PARK ,  Seung Chul Son ,  Sim Kwon Yoon ,  Byung Tak Lee ,  Young Sun Kim

    发明人： Il Kyun PARK ,  Seung Chul Son ,  Sim Kwon Yoon ,  Byung Tak Lee ,  Young Sun Kim

    IPC分类号： G06F15/16

    CPC分类号： H04L67/12

    摘要： Provided is an apparatus and method for setting a sensor node to be automatically connected. An apparatus for setting a connection of a sensor node may include: a data receiver to receive, from the sensor node, sensor data that is measured by the sensor node; a node type determining unit to determine a type of the sensor node based on the received sensor data; and a sensor node setting unit to set the sensor node to be automatically connected based on the determined type of the sensor node.

    摘要翻译： 提供一种用于设置要自动连接的传感器节点的装置和方法。 用于设置传感器节点的连接的装置可以包括：数据接收器，用于从传感器节点接收由传感器节点测量的传感器数据; 节点类型确定单元，用于基于所接收的传感器数据来确定所述传感器节点的类型; 以及传感器节点设置单元，用于基于所确定的传感器节点的类型来设置要自动连接的传感器节点。