摘要:
An integrated circuit with an integer odd number C of electrical contacts, wherein each of the electrical contacts is for communicating a data value. The integrated circuit also includes four memory arrays for storing data. The first and third memory arrays are operable to simultaneously output an integer even number E of data values. The second and fourth memory arrays are operable to simultaneously output an integer odd number D of data values. The integrated circuit further includes circuitry for selectively coupling the first, second, third, and fourth memory arrays to the electrical contacts, wherein the circuitry for selectively coupling is operable to couple the first and fourth memory arrays to the electrical contacts in a first state so that the first memory array outputs E data values and the fourth memory array outputs D data values in the first state. The circuitry for selectively coupling is also operable to couple the second and third memory arrays to the electrical contacts in a second state so that the second memory array outputs D data values and the third memory array outputs E data values in the second state.
摘要:
An output driver circuit for an integrated circuit is disclosed, where the output driver drives an output terminal with a high logic level having a voltage limited from the power supply voltage of the integrated circuit. The limited voltage is provided by applying a limited output high voltage to an output buffer, such that the drive signal applied to the gate of the pull-up transistor in the output driver is limited by the limited output high voltage applied to the output buffer. A voltage reference and regulator circuit for generating the limited output high voltage is also disclosed, and is based on a current mirror. The sum of the current in the current mirror is controlled by a bias current source, which may be dynamically controlled within the operating cycle or programmed by way of fuses. An offset compensating current source adds current into the reference leg of the current mirror to eliminate the development of an offset voltage in the current mirror, and the limited output high voltage is shifted by the threshold voltage of the pull-up drive transistor by way of a threshold shift circuit.
摘要:
An output driver circuit for an integrated circuit is disclosed, where the output driver drives an output terminal with a high logic level having a voltage limited from the power supply voltage of the integrated circuit. The limited voltage is provided by applying a limited output high voltage to an output buffer, such that the drive signal applied to the gate of the pull-up transistor in the output driver is limited by the limited output high voltage applied to the output buffer. A voltage reference and regulator circuit for generating the limited output high voltage is also disclosed, and is based on a current mirror. The sum of the current in the current mirror is controlled by a bias current source, which may be dynamically controlled within the operating cycle or programmed by way of fuses. An offset compensating current source adds current into the reference leg of the current mirror to eliminate the development of an offset voltage in the current mirror, and the limited output high voltage is shifted by the threshold voltage of the pull-up drive transistor by way of a threshold shift circuit.
摘要:
According to the present invention, a block of a static memory device, or some portion thereof, is selected to be subjected to a long write test. Choosing a portion of the static memory device, such as a block, offers the advantage of limiting current switching transients as well as recovery time following the long write test. All bitlines of the selected block are written to simultaneously for a period of time; all the wordlines within the selected block are disabled during this time so that no memory cell is selected. The bitlines of the selected block are recovered in two phases so that current switching transients are limited to a reasonable value and writing to the bitlines may be staggered. Finally, the selected block is read disturbed by cycling row fast through the selected block.
摘要:
A method and apparatus for testing and programming signal timing are disclosed which can be incorporated into an integrated circuit device utilizing on-chip timed command signals and pulses. The method of the invention enables nonpermanent testing and retesting of a device at various operational speeds during production testing. During retesting, temporary signal delays are selectively introduced into the circuit of a device which failed a previous test due to non-repairable errors. Once a device passes the production test error-free or with repairable errors, the temporary signal delays are permanently programmed into the device. Specifically, the method utilizes one or a plurality of mode control circuits and test voltage input terminals to nonpermanently select signal delays which may be identified and permanently enabled at a later time.
摘要:
A bias circuit for generating a bias voltage over variations in the power supply voltage and over process parameters is disclosed. The bias circuit utilizes a voltage divider to generate a divided voltage based on the power supply value. The divided voltage is applied to the gate of a modulating transistor (biased in saturation) in a current mirror, which controls a current applied to a linear load device biased in the linear region. The voltage across the load device determines the bias voltage. Variations in the power supply voltage are thus reflected in the bias voltage, such that the gate-to-source voltage of the series transistor is constant over variations in power supply voltage. Variations in process parameters that produce different transistor current drive characteristics are reflected in a variations of the bias voltage produced by the linear load device. The bias circuit may control the slew rate of an output driver, may control the propagation delay through a delay element, and be used to control the duration of a pulse produced by a pulse generating circuit.
摘要:
According to the present invention, the delay associated with a logic stage external to a sense amplifier is eliminated by absorbing the logic state into the sense amplifier circuitry. The sense amplifier inputs are swapped based on a sense enable signal which may be a derivative signal of a Data In signal. The sense amplifier may sense continuously or it may be clocked. The sense enable circuitry may be applied to various types of sense amplifiers such as dynamic, current mirror, differential, cross coupled, and level shifting sense amplifiers.
摘要:
An output driver circuit for an integrate circuit is disclosed, where the output driver drives an output terminal with a high logic level having a voltage limited from the power supply voltage of the integrated circuit. The limited voltage is provided by applying a limited output high voltage to an output buffer, such that the drive signal applied to the gate of the pull-up transistor in the output driver is limited by the limited output high voltage applied to the output buffer. A voltage reference and regulator circuit for generating the limited output high voltage is also disclosed, and is based on a current mirror. The sum of the current in the current mirror is controlled by a bias current source, which may be dynamically controlled within the operating cycle or programmed by way of fuses. An offset compensating current source adds current into the reference leg of the current mirror to eliminate the development of an offset voltage in the current mirror, and the limited output high voltage is shifted by the threshold voltage of the pull-up drive transistor by way of a threshold shift circuit.
摘要:
The redundant elements of an integrated circuit memory device having a plurality of redundant and non-redundant elements such as rows, columns, wordlines, and blocks, may be selectively enabled during a stress test mode so that both redundant elements and non-redundant elements may be stress tested concurrently. Enabling capabilities contained within the redundant element circuitry selectively enables the redundant elements when a stress test signal is equal to a predetermined value, indicative of a stress test mode.
摘要:
A memory system includes two memory arrays coupled to a global data bus via respective address decode circuits. Address control circuitry defaults to the weaker memory array upon receiving a new address such that the stronger memory array will not produce false values on the bus prior to stabilization of the address and proper decode. Consequently, the weaker memory array is not faced with a situation where it must overcome the previous false signal prior to developing the proper output values on the bus.