公开(公告)号：US20220342561A1

公开(公告)日：2022-10-27

申请号：US17236183

申请日：2021-04-21

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Carly M. Wantulok ,  Sumana Adusumilli ,  Chiara Cerafogli

IPC: G06F3/06 ,  G06N20/00

Abstract: Methods, apparatuses, and non-transitory machine-readable media associated with data transmission are described. Data transmission management can include receiving, from an edge device via a radio at a first device, instructions associated with data transmission between a second device in communication with the first device and a cloud service in communication with the first device. Data transmission management can also include managing, at the first device and based on the instructions from the edge device, data received from a memory resource of the second device for transmission to the cloud service and data received from the cloud service for transmission to the memory resource of the second device. Data transmission management can further include enabling transmission of some, none, or all of the data between the cloud service and the memory resource of the second device and vice versa based on the management of the data.

公开(公告)号：US11482534B2

公开(公告)日：2022-10-25

申请号：US16861093

申请日：2020-04-28

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Meng-Wei Kuo ,  John D. Hopkins

IPC: H01L21/8239 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/28 ,  H01L27/11524 ,  H01L27/1157

Abstract: Some embodiments include a method of forming vertically-stacked memory cells. An opening is formed through a stack of alternating insulative and conductive levels. Cavities are formed to extend into the conductive levels. Regions of the insulative levels remain as ledges which separate adjacent cavities from one another. Material is removed from the ledges to thin the ledges, and then charge-blocking dielectric and charge-storage structures are formed within the cavities. Some embodiments include an integrated structure having a stack of alternating insulative levels and conductive levels. Cavities extend into the conductive levels. Ledges of the insulative levels separate adjacent cavities from one another. The ledges are thinned relative to regions of the insulative levels not encompassed by the ledges. Charge-blocking dielectric and charge-storage structures are within the cavities.

公开(公告)号：US20220329657A1

公开(公告)日：2022-10-13

申请号：US17719790

申请日：2022-04-13

Applicant: Micron Technology, Inc.

Inventor： Sharmila Velamur ,  Fatma Arzum Simsek-Ege ,  Shivani Srivastava ,  Marsela Pontoh ,  Lavanya Sriram

IPC: H04L67/125 ,  H04L67/00

Abstract: Methods, systems, and devices associated with an edge device are described. An edge device can include a processing resource and a memory resource having instructions executable to receive, at the processing resource, the memory resource, or both, and from a first source comprising a device in communication with the edge device, first input associated with a user of the device. The instructions can be executable to receive, from a second source, second input associated with a user of the device, determine, based on the first input and the second input, operational instructions for the device and transmit the operational instructions to the device. The instructions can be executable to update, using a machine learning model, the operational instructions responsive to receiving an indication of performance of the operational instructions by the device and responsive to third input received from the first source, the second source, or both.

公开(公告)号：US20220167138A1

公开(公告)日：2022-05-26

申请号：US17101761

申请日：2020-11-23

Applicant: Micron Technology, Inc.

Inventor： Shruthi Kumara Vadivel ,  Anshika Sharma ,  Deepti Verma ,  Fatma Arzum Simsek-Ege ,  Trupti D. Gawai ,  Lavanya Sriram

IPC: H04W4/90 ,  G08B7/06 ,  H04W76/50 ,  H04W4/021 ,  B64C39/02 ,  G01V1/00

Abstract: Methods, systems, and devices for operating emergency prevention sensor systems are described. Devices can include a plurality of components including a sensor component, a processor, and memory. In an example, a method can include receiving at a processor signaling from a plurality of environmental sensing devices, each having at least one biodegradable component, in an area of concern, wherein the area of concern corresponds to a particular set of coordinates in a database, determining environmental characteristics of an emergency associated with the area of concern based, at least in part, on the signaling, and determining a preventive action based on the determined characteristics. In another example, a number of components of the sensing devices are biodegradable.

公开(公告)号：US20210193314A1

公开(公告)日：2021-06-24

申请号：US16989749

申请日：2020-08-10

Applicant: Micron Technology, Inc.

Inventor： Gitanjali T. Ghosh ,  Irene K. Thompson ,  Jessica M. Maderos ,  Hongmei Wang ,  Fatma Arzum Simsek-Ege ,  Kathryn H. Russo

IPC: G16H40/67 ,  G16H40/63

Abstract: Systems, apparatuses, and methods related to medical device data analysis are described. In some examples, a medical device is implanted in a user of the medical device and the data generated by the medical device is not easily accessible to the user. In an example, a controller can be configured to receive, by a mobile device coupled to a medical device, data from the medical device, where the data is a part of a baseline dataset related to the medical device. The controller can be configured to receive different data from the medical device, where the different data is received from the medical device as the different data is generated by the medical device, analyze the data from the medical device and the different data generated by the medical device, and perform an action based on the analyzed data and the different data generated by the medical device.

公开(公告)号：US10991701B2

公开(公告)日：2021-04-27

申请号：US16564896

申请日：2019-09-09

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Eric Blomiley

IPC: H01L27/108 ,  H01L29/49 ,  H01L21/768 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  C23C16/04 ,  C23C16/18

Abstract: Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.

公开(公告)号：US20190355745A1

公开(公告)日：2019-11-21

申请号：US16528454

申请日：2019-07-31

Applicant: Micron Technology, Inc.

Inventor： Jie Sun ,  Fatma Arzum Simsek-Ege

IPC: H01L27/11582 ,  H01L21/28 ,  H01L21/02 ,  H01L27/115 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, vertically-stacked memory cells within the conductive levels, an insulative material over the stack and a select gate material over the insulative material. An opening extends through the select gate material, through the insulative material, and through the stack of alternating dielectric and conductive levels. A first region of the opening within the insulative material is wider along a cross-section than a second region of the opening within the select gate material, and is wider along the cross-section than a third region of the opening within the stack of alternating dielectric levels and conductive levels. Channel material is within the opening and adjacent the insulative material, the select gate material and the memory cells. Some embodiments include methods of forming vertically-stacked memory cells.

公开(公告)号：US10411017B2

公开(公告)日：2019-09-10

申请号：US15692779

申请日：2017-08-31

Applicant: Micron Technology, Inc.

Inventor： Eric Blomiley ,  Fatma Arzum Simsek-Ege

IPC: H01L21/28 ,  C23C16/06 ,  H01L27/108 ,  H01L29/49 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285

Abstract: Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.

公开(公告)号：US20190214399A1

公开(公告)日：2019-07-11

申请号：US16237287

申请日：2018-12-31

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  John Hopkins ,  Srikant Jayanti

IPC: H01L27/11556 ,  H01L29/788 ,  H01L29/66 ,  H01L29/792 ,  H01L27/11524 ,  H01L27/11582

CPC classification number: H01L27/11556 ,  H01L27/11524 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: Vertical memories and methods of making the same are discussed generally herein. In one embodiment, a vertical memory can include a vertical pillar extending to a source, an etch stop tier over the source, and a stack of alternating dielectric tiers and conductive tiers over the etch stop tier. The etch stop tier can comprise a blocking dielectric adjacent to the pillar. In another embodiment, the etch stop tier can comprise a blocking dielectric adjacent to the pillar, and a plurality of dielectric films horizontally extending from the blocking dielectric into the etch stop tier.

公开(公告)号：US20190067295A1

公开(公告)日：2019-02-28

申请号：US15692779

申请日：2017-08-31

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Eric Blomiley

IPC: H01L27/108 ,  H01L29/49 ,  H01L21/28 ,  C23C16/455 ,  C23C16/06

CPC classification number: H01L27/10891 ,  C23C16/06 ,  C23C16/45527 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76846 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966

Abstract: Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.