公开(公告)号：US11469191B2

公开(公告)日：2022-10-11

申请号：US16826216

申请日：2020-03-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Pandi Chelvam Marimuthu ,  Andy Chang Bum Yong ,  Aung Kyaw Oo ,  Yaojian Lin

IPC: H01L23/66 ,  H01L21/48 ,  H01L23/498 ,  H01L21/56 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00 ,  H01L23/538 ,  H01L23/552 ,  H01L21/683 ,  H01L23/31

Abstract: A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A first conductive layer is formed with an antenna over a first surface of the encapsulant. A second conductive layer is formed with a ground plane over a second surface of the encapsulant with the antenna located within a footprint of the ground plane. A conductive bump is formed on the ground plane. A third conductive layer is formed over the first surface of the encapsulant. A fourth conductive layer is formed over the second surface of the encapsulant. A conductive via is disposed adjacent to the semiconductor die prior to depositing the encapsulant. The antenna is coupled to the semiconductor die through the conductive via. The antenna is formed with the conductive via between the antenna and semiconductor die. A PCB unit is disposed in the encapsulant.

公开(公告)号：US20220270983A1

公开(公告)日：2022-08-25

申请号：US17662977

申请日：2022-05-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Dong Won Son ,  Byeonghoon Kim ,  Sung Ho Choi ,  Sung Jae Lim ,  Jong Ho Shin ,  SungWon Cho ,  ChangOh Kim ,  KyoungHee Park

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L23/367

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US20220250296A1

公开(公告)日：2022-08-11

申请号：US17304339

申请日：2021-06-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  KyungHwan Kim

IPC: B29C45/14 ,  H01L21/56 ,  B29C45/34

Abstract: A semiconductor manufacturing device has a strip panel and a plurality of electrical components disposed over the strip panel. An encapsulant is disposed over the electrical components using a mold gate injector and directed in a path toward higher flow resistance for the encapsulant over the electrical components. The mold gate injector can be shifted toward a side of the strip panel with the path toward higher flow resistance for the encapsulant. The mold gate injector can have a discharge port smaller than the mold gate injector directed at the path toward higher flow resistance for the encapsulant. The discharge port injector can be shifted toward a side of the strip panel with the path toward higher flow resistance for the encapsulant. An air vent and air tank can be coupled to the mold gate injector to aid in release of excess air from the encapsulant.

公开(公告)号：US11370655B2

公开(公告)日：2022-06-28

申请号：US16825567

申请日：2020-03-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Won Kyoung Choi ,  Kang Chen ,  Ivan Micallef

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/56 ,  H01L23/538 ,  H01L23/552 ,  H01L23/00 ,  H01L25/10 ,  H01L25/00

Abstract: A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.

公开(公告)号：US20220199545A1

公开(公告)日：2022-06-23

申请号：US17126621

申请日：2020-12-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoungHee Park ,  JinHee Jung ,  OMin Kwon ,  JiWon Lee ,  YuJeong Jang

IPC: H01L23/552 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/033

Abstract: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.

公开(公告)号：US11367690B2

公开(公告)日：2022-06-21

申请号：US16880173

申请日：2020-05-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683 ,  H01L25/16 ,  H01L23/498

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

公开(公告)号：US11342278B2

公开(公告)日：2022-05-24

申请号：US17008997

申请日：2020-09-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SungWon Cho ,  ChangOh Kim ,  Il Kwon Shim ,  InSang Yoon ,  KyoungHee Park

IPC: H01L23/34 ,  H01L23/28 ,  H01L21/00 ,  H05K7/20 ,  H01L23/552 ,  H01L23/00 ,  H01L23/36 ,  H01L23/522 ,  H01L23/50 ,  H01L23/60 ,  H01L23/498 ,  H01L27/02 ,  H01L23/31 ,  H01L23/367

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US11309193B2

公开(公告)日：2022-04-19

申请号：US17010221

申请日：2020-09-02

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  KyungHwan Kim ,  WoonJae Beak ,  HunTeak Lee ,  InSang Yoon

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/58 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00 ,  H01L25/16

Abstract: A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the semiconductor die or component embedded in the penetrable film layer. A conductive layer is formed over a portion of the film layer within the attach area and over a portion of the film layer outside the attach area. An encapsulant is deposited over the film layer, conductive layer, and semiconductor die or component. The conductive layer extends outside the encapsulant. An insulating material can be disposed under the semiconductor die or component. A shielding layer is formed over the encapsulant. The shielding layer is electrically connected to the conductive layer. The penetrable film layer is removed. The semiconductor die or component disposed over the film layer and covered by the encapsulant and shielding layer form an SIP module without a substrate.

公开(公告)号：US20220115332A1

公开(公告)日：2022-04-14

申请号：US17645257

申请日：2021-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Deokkyung Yang ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78

Abstract: A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

公开(公告)号：US20220093417A1

公开(公告)日：2022-03-24

申请号：US17457719

申请日：2021-12-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L21/56 ,  H01L23/28 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L21/3105

Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.