公开(公告)号：US20190386207A1

公开(公告)日：2019-12-19

申请号：US16547670

申请日：2019-08-22

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/06 ,  H01L43/12 ,  H01L43/10 ,  H01L43/04 ,  G11C11/16

Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.

公开(公告)号：US20190333560A1

公开(公告)日：2019-10-31

申请号：US16068792

申请日：2018-02-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: G11C11/16 ,  H01F10/32 ,  H01L21/66 ,  H01L43/12 ,  H01L43/02

Abstract: A data writing method is configured such that a spin device includes a conducting portion extending in a first direction and a device portion stacked on one surface of the conducting portion and including a non-magnetic layer and a ferromagnetic layer, wherein an energy equal to or smaller than an energy represented by a predetermined relational expression (1) is applied in the first direction of the conducting portion when the pulse width of an applied pulse is t.

公开(公告)号：US20190305763A1

公开(公告)日：2019-10-03

申请号：US16414838

申请日：2019-05-17

Applicant: TDK CORPORATION

Inventor： Jiro YOSHINARI ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H03K3/84 ,  H01L43/08 ,  H01L43/04 ,  H01F10/32 ,  H04L9/08 ,  G06F7/58

Abstract: A random number generator capable of generating a natural random number using a spin-orbit torque (SOT) is provided. The random number generator includes a ferromagnetic metal layer and a spin-orbit torque wiring extending in a first direction crossing a lamination direction of the ferromagnetic metal layer and being joined to the ferromagnetic metal layer, wherein the direction of spins injected from the spin-orbit torque wiring into the ferromagnetic metal layer and an easy magnetization direction of the ferromagnetic metal layer intersect each other.

公开(公告)号：US20190221735A1

公开(公告)日：2019-07-18

申请号：US16364590

申请日：2019-03-26

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Katsuyuki NAKADA ,  Tatsuo SHIBATA

IPC: H01L43/10 ,  G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H01L27/22 ,  H01L29/82 ,  H01L27/105 ,  H01L43/08

CPC classification number: H01L43/10 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/105 ,  H01L27/222 ,  H01L29/82 ,  H01L43/08

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0

公开(公告)号：US20190214549A1

公开(公告)日：2019-07-11

申请号：US16082913

申请日：2017-11-08

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Tomoyuki SASAKI

IPC: H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that is disposed on a side surface of the magnetic tunnel junction, a cap layer that covers a top surface of the magnetic tunnel junction and a surface of the side wall portion, and an upper electrode layer that is disposed on the cap layer. The cap layer includes an upper surface and a lower surface. The upper surface has a protruding shape that protrudes in a direction away from the magnetic tunnel junction in a first region which is positioned immediately above the top surface of the magnetic tunnel junction. The upper surface has a recess that is recessed in a direction toward the side wall portion in a second region which is positioned immediately above the surface of the side wall portion.

公开(公告)号：US20190206602A1

公开(公告)日：2019-07-04

申请号：US16222037

申请日：2018-12-17

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01F10/32 ,  G01R33/09 ,  G11C11/16 ,  H01L43/14 ,  H01L43/06 ,  H01L43/04

CPC classification number: H01F10/329 ,  G01R33/093 ,  G01R33/098 ,  G11C11/161 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14

Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.

公开(公告)号：US20190147929A1

公开(公告)日：2019-05-16

申请号：US16093373

申请日：2017-05-22

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01F10/32

Abstract: A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.

公开(公告)号：US20190131517A1

公开(公告)日：2019-05-02

申请号：US16091240

申请日：2018-01-26

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16

Abstract: A spin current magnetization rotating element of the present disclosure includes a first ferromagnetic metal layer and a spin-orbit torque wiring, in which the spin-orbit torque wiring has a structure in which spin conduction layers and interface spin generation layers are alternately laminated, and one of the spin conduction layers is in closest proximity to the first ferromagnetic metal layer.

公开(公告)号：US20190074124A1

公开(公告)日：2019-03-07

申请号：US16110846

申请日：2018-08-23

Applicant: TDK CORPORATION

Inventor： Yugo ISHITANI ,  Tomoyuki SASAKI

IPC: H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H03H11/04

Abstract: A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.

公开(公告)号：US20190058111A1

公开(公告)日：2019-02-21

申请号：US16079800

申请日：2017-07-25

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A spin-current magnetization rotational element includes: a ferromagnetic metal layer; and a spin-orbit torque wiring that extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer and is bonded to the ferromagnetic metal layer. A direction of a spin injected into the ferromagnetic metal layer from the spin-orbit torque wiring intersects a magnetization direction of the ferromagnetic metal layer. The ferromagnetic metal layer has shape anisotropy and has a demagnetizing field distribution caused by the shape anisotropy. The demagnetizing field distribution generates an easy magnetization rotational direction in which the magnetization of the ferromagnetic metal layer is most easily reversed. The easy magnetization rotational direction intersects the first direction in a plan view seen from the stacking direction.