Abstract:
A gas field ionization ion source apparatus is provided which is small-sized, has high-performance, and is capable of performing a tilt adjustment in a state in which an emitter tip position is maintained approximately constant. An emitter (1) is surrounded by a chamber wall (4) of an emitter chamber and ions are emitted from the tip of the emitter (1). A gas that is an ion material is introduced into the emitter chamber, through an extraction electrode (3) to which a high voltage is applied and a tube (15). The emitter (1) is cooled by a freezing means (10) through a metallic net (11) and an emitter base (12). The emitter base (12) is fixed to a movable portion (13a) of a tilting means (13). The movable portion (13a) is connected to a non-movable portion (13b) through a sliding surface (14). The sliding surface (14) forms a part of a cylindrical surface whose central axis is an axis that passes through the tip of the emitter (1) and is orthogonal to an optical axis. If the surface forms such a shape, and the amount of sliding of the sliding surface (14) is controlled, control on the tilt of the emitter (1) can be performed without moving the tip of the emitter (1).
Abstract:
An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
Abstract:
There is provided an ion beam generating apparatus capable of reducing power consumption and obtain highly-accurate uniformity in a substrate process without providing a mechanism to rotate a substrate. Each of ion beam generating apparatuses 1a and 1b includes a discharging tank for generating plasma, an extraction electrode including an inclined portion arranged so as to be inclined with respect to an irradiated surface for extracting an ion generated in the discharging tank, a rotating driving unit 30 provided out of the discharging tank for rotating the extraction electrode, and a rotation supporting member 31 for coupling the rotating driving unit 30 and the extraction electrode 7, wherein an insulator block 34 arranged around the rotation supporting member 31 is included in the discharging tank.
Abstract:
Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth.The present invention relates to an ion microscope provided with a gas field ionization ion source, in which disposed are a refrigerator for cooling the gas field ionization ion source independent of the main body of the ion microscope, and a refrigerant circulation circuit cooling mechanism for circulating a refrigerant between the gas field ionization ion source and the refrigerator. Consequently it is possible to reduce the mechanical vibration of the refrigerator, which propagates to the gas field ionization ion source, and to achieve both the improvement of the brightness of the ion source and the improvement of ion beam focusing performance.
Abstract:
According to one embodiment, a material gas led into a vacuum container is ionized. When ions are implanted into a semiconductor substrate, gas is exhausted from the vacuum container by a pump and the gas exhausted by the pump is returned to the vacuum container and reused. This makes it possible efficiently use the material gas.
Abstract:
An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece.
Abstract:
An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield.
Abstract:
Systems and methods for heating an apex of a tip of a charged particle source are disclosed. The charged particle source can be, for example, a gas ion source. The systems can include a detector configured to detect light generated by the tip apex, and a controller coupled with the charged particle source and the detector so that the controller can control heating of the tip apex based on the light detected by the detector.
Abstract:
An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.
Abstract:
An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.