GAS FIELD IONIZATION ION SOURCE APPARATUS AND SCANNING CHARGED PARTICLE MICROSCOPE EQUIPPED WITH SAME
    171.
    发明申请
    GAS FIELD IONIZATION ION SOURCE APPARATUS AND SCANNING CHARGED PARTICLE MICROSCOPE EQUIPPED WITH SAME 审中-公开
    气体放电离子源装置和扫描带有粒子的微粒显微镜

    公开(公告)号:US20120132802A1

    公开(公告)日:2012-05-31

    申请号:US13381638

    申请日:2010-06-08

    Abstract: A gas field ionization ion source apparatus is provided which is small-sized, has high-performance, and is capable of performing a tilt adjustment in a state in which an emitter tip position is maintained approximately constant. An emitter (1) is surrounded by a chamber wall (4) of an emitter chamber and ions are emitted from the tip of the emitter (1). A gas that is an ion material is introduced into the emitter chamber, through an extraction electrode (3) to which a high voltage is applied and a tube (15). The emitter (1) is cooled by a freezing means (10) through a metallic net (11) and an emitter base (12). The emitter base (12) is fixed to a movable portion (13a) of a tilting means (13). The movable portion (13a) is connected to a non-movable portion (13b) through a sliding surface (14). The sliding surface (14) forms a part of a cylindrical surface whose central axis is an axis that passes through the tip of the emitter (1) and is orthogonal to an optical axis. If the surface forms such a shape, and the amount of sliding of the sliding surface (14) is controlled, control on the tilt of the emitter (1) can be performed without moving the tip of the emitter (1).

    Abstract translation: 提供了一种小型化,高性能的气体电离离子源装置,并且能够在发射极尖端位置保持大致恒定的状态下进行倾斜调整。 发射器(1)被发射器室的室壁(4)包围,离子从发射器(1)的尖端发射。 作为离子材料的气体通过施加高电压的引出电极(3)和管(15)引入发射室。 发射器(1)由冷冻装置(10)通过金属网(11)和发射极基座(12)冷却。 发射极基座(12)固定在倾斜装置(13)的可动部分(13a)上。 可移动部分(13a)通过滑动表面(14)连接到不可移动部分(13b)。 滑动表面(14)形成圆柱形表面的一部分,其中心轴是穿过发射器(1)的尖端并与光轴正交的轴线。 如果表面形成这样的形状,并且控制滑动表面(14)的滑动量,则可以在不移动发射器(1)的尖端的情况下执行对发射器(1)的倾斜的控制。

    Temperature controlled ion source
    172.
    发明授权
    Temperature controlled ion source 有权
    温度控制离子源

    公开(公告)号:US08183542B2

    公开(公告)日:2012-05-22

    申请号:US12754318

    申请日:2010-04-05

    CPC classification number: H01J37/08 H01J37/3171 H01J2237/002

    Abstract: An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.

    Abstract translation: 提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。 间隙界面限定在冷却板和腔室的壁之间。 在给定压力下将冷却剂气体供应到界面,其中压力确定从冷却板到室的导热性,以控制室内部的温度。

    ION MICROSCOPE
    174.
    发明申请
    ION MICROSCOPE 有权
    离子显微镜

    公开(公告)号:US20120097863A1

    公开(公告)日:2012-04-26

    申请号:US13381623

    申请日:2010-06-04

    Abstract: Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth.The present invention relates to an ion microscope provided with a gas field ionization ion source, in which disposed are a refrigerator for cooling the gas field ionization ion source independent of the main body of the ion microscope, and a refrigerant circulation circuit cooling mechanism for circulating a refrigerant between the gas field ionization ion source and the refrigerator. Consequently it is possible to reduce the mechanical vibration of the refrigerator, which propagates to the gas field ionization ion source, and to achieve both the improvement of the brightness of the ion source and the improvement of ion beam focusing performance.

    Abstract translation: 提供大电流和高度稳定的气田电离离子源,以及具有大焦深的高分辨率离子显微镜。 本发明涉及一种具有气田电离离子源的离子显微镜,其中设置有用于冷却与离子显微镜主体无关的气田电离离子源的制冷机,以及用于循环的制冷剂循环回路冷却机构 气体离子源和冰箱之间的制冷剂。 因此,可以减小传播到气田电离离子源的冰箱的机械振动,并且实现离子源的亮度的提高和离子束聚焦性能的提高。

    ION IMPLANTATION APPARATUS AND METHOD
    175.
    发明申请
    ION IMPLANTATION APPARATUS AND METHOD 审中-公开
    离子植入装置和方法

    公开(公告)号:US20120085941A1

    公开(公告)日:2012-04-12

    申请号:US13268118

    申请日:2011-10-07

    Inventor: Takeshi SHIBATA

    CPC classification number: H01J37/3171 H01J37/08 H01J37/18 H01J2237/18

    Abstract: According to one embodiment, a material gas led into a vacuum container is ionized. When ions are implanted into a semiconductor substrate, gas is exhausted from the vacuum container by a pump and the gas exhausted by the pump is returned to the vacuum container and reused. This makes it possible efficiently use the material gas.

    Abstract translation: 根据一个实施例,导入真空容器的材料气体被电离。 当将离子注入到半导体衬底中时,通过泵从真空容器排出气体,并且由泵排出的气体返回到真空容器并重新使用。 这使得可以有效地使用原料气体。

    ION BEAM DISTRIBUTION
    176.
    发明申请
    ION BEAM DISTRIBUTION 审中-公开
    离子束分布

    公开(公告)号:US20120080307A1

    公开(公告)日:2012-04-05

    申请号:US12898281

    申请日:2010-10-05

    Applicant: Ikuya Kameyama

    Inventor: Ikuya Kameyama

    Abstract: An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece.

    Abstract translation: 离子束系统包括具有大致椭圆形图案的孔的栅格组件,用于引导包括多个子束的离子束以产生离子束,其中离子束横截面的离子电流密度分布是非椭圆形的 。 离子电流密度分布可以具有与离子束的横截面的两个正交轴中的一个对称的单个峰。 或者,对于离子束的横截面的两个正交轴中的另一个,单个峰可以是不对称的。 在另一个实施方案中,离子电流密度分布可以在横截面的两个正交轴之一的相对侧上具有两个峰。 将离子束引导到旋转的目标工件上,在距离目标工件的中心等距离的点处产生基本均匀的旋转积分的平均离子电流密度。

    Compact RF Antenna for an Inductively Coupled Plasma Ion Source
    177.
    发明申请
    Compact RF Antenna for an Inductively Coupled Plasma Ion Source 有权
    用于电感耦合等离子体离子源的紧凑RF天线

    公开(公告)号:US20120080148A1

    公开(公告)日:2012-04-05

    申请号:US12894779

    申请日:2010-09-30

    Applicant: Shouyin Zhang

    Inventor: Shouyin Zhang

    CPC classification number: H01J37/08 H01J37/3211 H01J2237/0815

    Abstract: An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield.

    Abstract translation: 公开了一种用于聚焦离子束(FIB)系统的电感耦合等离子体离子源,其包括具有进料气体输送系统的绝缘等离子体室,与等离子体室同心定位的紧凑射频(RF)天线线圈, 或与等离子体室的外径接触。 在一些实施例中,等离子体室由法拉第屏蔽围绕,以防止天线上的RF电压与等离子体室内的等离子体之间的电容耦合。 高介电强度绝缘管热收缩到用于形成天线的导电管或导线的外径上,以允许天线线圈内的匝紧密封装。 绝缘管能够防止天线的不同部分之间以及天线和法拉第屏蔽之间的RF电压差异。

    Ion source apparatus
    179.
    发明授权
    Ion source apparatus 失效
    离子源装置

    公开(公告)号:US08143590B2

    公开(公告)日:2012-03-27

    申请号:US12838309

    申请日:2010-07-16

    Abstract: An ion source apparatus has an ion source assembly and a neutralizer. The ion source assembly has a body, a heat-dissipating device, an anode chunk and a gas distributor. The heat-dissipating device has a thermal transfer plate and a first thermal side sheet. The thermal transfer plate has a top, a protrusion and an annular disrupting recess. The protrusion is formed at the top of the thermal transfer plate. The disrupting recess is radially formed around the protrusion. The first thermal side sheet surrounds the protrusion. The gas distributor is mounted securely in the protrusion. Because the protrusion is located between the gas distributor and the first thermal side sheet and the disrupting recess is radially formed around the protrusion, accumulated ions, molecules and deposition film particles are longitudinally disrupted and do not form a short circuit between the gas distributor and the first thermal side sheet.

    Abstract translation: 离子源装置具有离子源组件和中和器。 离子源组件具有主体,散热装置,阳极块和气体分配器。 散热装置具有热转印板和第一热侧片。 热转印板具有顶部,突起和环形破坏凹部。 突起形成在热转印板的顶部。 破裂凹部围绕突起径向地形成。 第一热侧片围绕突起。 气体分配器牢固地安装在突起中。 因为突起位于气体分配器和第一热侧片之间,并且破裂凹部围绕突起径向地形成,所以累积的离子,分子和沉积膜颗粒被纵向破坏,并且不会在气体分布器和 第一热侧片。

    High density helicon plasma source for wide ribbon ion beam generation
    180.
    发明授权
    High density helicon plasma source for wide ribbon ion beam generation 有权
    用于宽带离子束产生的高密度螺旋等离子体源

    公开(公告)号:US08142607B2

    公开(公告)日:2012-03-27

    申请号:US12200189

    申请日:2008-08-28

    Abstract: An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

    Abstract translation: 公开了一种利用一个或多个螺旋等离子体源产生高密度宽带状离子束的离子源。 除了螺旋型等离子体源之外,离子源还包括扩散室。 扩散室具有沿着与螺旋等离子体源的介质圆筒相同的轴线定向的提取孔。 在一个实施例中,位于扩散室的相对端上的双螺旋等离子体源用于产生更均匀的提取的离子束。 在另一实施例中,使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

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