公开(公告)号：US08736177B2

公开(公告)日：2014-05-27

申请号：US12894779

申请日：2010-09-30

Applicant: Shouyin Zhang

Inventor： Shouyin Zhang

IPC: H01J7/24

CPC classification number: H01J37/08 ,  H01J37/3211 ,  H01J2237/0815

Abstract: An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield.

Abstract translation: 公开了一种用于聚焦离子束（FIB）系统的电感耦合等离子体离子源，其包括具有进料气体输送系统的绝缘等离子体室，与等离子体室同心定位的紧凑射频（RF）天线线圈， 或与等离子体室的外径接触。 在一些实施例中，等离子体室由法拉第屏蔽围绕，以防止天线上的RF电压与等离子体室内的等离子体之间的电容耦合。 高介电强度绝缘管热收缩到用于形成天线的导电管或导线的外径上，以允许天线线圈内的匝紧密封装。 绝缘管能够防止天线的不同部分之间以及天线和法拉第屏蔽之间的RF电压差异。

公开(公告)号：US09053895B2

公开(公告)日：2015-06-09

申请号：US13307830

申请日：2011-11-30

Applicant: Sean Kellogg ,  Anthony Graupera ,  N. William Parker ,  Andrew B. Wells ,  Mark W. Utlaut ,  Walter Skoczylas ,  Gregory A. Schwind ,  Shouyin Zhang ,  Noel Smith

Inventor： Sean Kellogg ,  Anthony Graupera ,  N. William Parker ,  Andrew B. Wells ,  Mark W. Utlaut ,  Walter Skoczylas ,  Gregory A. Schwind ,  Shouyin Zhang ,  Noel Smith

IPC: H01J1/02 ,  H01J37/08 ,  H01J37/04 ,  H01J27/16

CPC classification number: H01J37/32605 ,  H01J9/02 ,  H01J27/16 ,  H01J37/04 ,  H01J37/08 ,  H01J2237/032

Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.

Abstract translation: 用于聚焦离子束系统的电感耦合等离子体带电粒子源包括具有可拆卸地附接的源电极的等离子体反应室。 紧固机构将源电极与等离子体反应室连接，并形成导热的真空密封。 使用可移动的源电极，现在可以提高等离子体源管的可用性和再利用。

公开(公告)号：US20120032092A1

公开(公告)日：2012-02-09

申请号：US13276731

申请日：2011-10-19

Applicant: Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

Inventor： Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

IPC: H01J3/14 ,  H05B37/00 ,  H02J1/00 ,  H05B37/02

CPC classification number: H01J37/08 ,  H01J37/24 ,  H01J2237/0815 ,  H01J2237/31749 ,  H05H1/36

Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Abstract translation: 公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量 样品和多个孔。 等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。 等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。 通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。 通过适当的孔隙材料选择使孔径的离子束溅射最小化。

公开(公告)号：US20110198511A1

公开(公告)日：2011-08-18

申请号：US12710602

申请日：2010-02-23

Applicant: ANTHONY GRAUPERA ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang

Inventor： ANTHONY GRAUPERA ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang

IPC: H01J3/14 ,  H05H1/24

CPC classification number: H01J37/08 ,  H01J37/24 ,  H01J2237/0815 ,  H01J2237/31749 ,  H05H1/36

Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Abstract translation: 公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量 样品和多个孔。 等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。 等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。 通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。 通过适当的孔隙材料选择使孔径的离子束溅射最小化。

公开(公告)号：US09196451B2

公开(公告)日：2015-11-24

申请号：US13353032

申请日：2012-01-18

Applicant: Shouyin Zhang ,  Noel Smith ,  Walter Skoczylas

Inventor： Shouyin Zhang ,  Noel Smith ,  Walter Skoczylas

IPC: H01J27/00 ,  H01J37/08 ,  H01J27/16

CPC classification number: H01J37/08 ,  H01J27/16 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/026 ,  H01J2237/038 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.

Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源包括绝缘和冷却等离子体室的电介质液体。 由于气体中的电压降主要发生在相对较高的压力下，电流下的流量限制器是等离子体电位降低电弧的大部分。

公开(公告)号：US20130250293A1

公开(公告)日：2013-09-26

申请号：US13424977

申请日：2012-03-20

Applicant: Mark W. Utlaut ,  Sean Kellogg ,  N. William Parker ,  Anthony Graupera ,  Shouyin Zhang ,  Philip Brundage ,  Doug Kinion

Inventor： Mark W. Utlaut ,  Sean Kellogg ,  N. William Parker ,  Anthony Graupera ,  Shouyin Zhang ,  Philip Brundage ,  Doug Kinion

IPC: G01J3/443

CPC classification number: H01J37/08 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/022 ,  H01J2237/0225 ,  H01J2237/31749

Abstract: A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber. Preferred embodiments include a spectrometer used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides endpointing means based on spectral analysis to determine when cleaning of the plasma source is completed.

Abstract translation: 一种用于主动监测等离子体源的状态以调节和控制源并检测等离子体反应室中不想要的污染物质的存在的方法和装置。 优选的实施方案包括用于量化等离子体组分的光谱仪。 提供一种系统控制器，其使用基于等离子体的光谱分析的反馈回路来调节等离子体源的离子组成。 该系统还提供基于光谱分析的终点装置，以确定何时完成等离子体源的清洁。

公开(公告)号：US08253118B2

公开(公告)日：2012-08-28

申请号：US12579237

申请日：2009-10-14

Applicant: Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

Inventor： Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

IPC: H01J49/10 ,  H01J27/02

CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Abstract translation: 一种在采用电感耦合等离子体离子源的聚焦离子束（FIB）系统中进行铣削和成像的方法，其中利用两组FIB系统操作参数：第一组，表示用于在铣削中操作FIB系统的优化参数 模式，以及表示用于在成像模式下操作的优化参数的第二组。 这些操作参数可以包括ICP源中的气体压力，ICP源的RF功率，离子提取电压，以及在一些实施例中，FIB系统离子列内的各种参数，包括透镜电压和光束限定孔直径 。 优化的铣削工艺提供了从基材表面快速去除材料的体积（低空间分辨率）的最大研磨速度。 优化的成像过程提供最小化的材料去除和更高的空间分辨率，用于改进正在研磨的衬底区域的成像。

公开(公告)号：US08928210B2

公开(公告)日：2015-01-06

申请号：US13307830

申请日：2011-11-30

Applicant: Sean Kellogg ,  Anthony Graupera ,  N. William Parker ,  Andrew B. Wells ,  Mark W. Utlaut ,  Walter Skoczylas ,  Gregory A. Schwind ,  Shouyin Zhang ,  Noel Smith

Inventor： Sean Kellogg ,  Anthony Graupera ,  N. William Parker ,  Andrew B. Wells ,  Mark W. Utlaut ,  Walter Skoczylas ,  Gregory A. Schwind ,  Shouyin Zhang ,  Noel Smith

IPC: H01J1/02

Abstract: An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.

公开(公告)号：US08723143B2

公开(公告)日：2014-05-13

申请号：US13276731

申请日：2011-10-19

Applicant: Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

Inventor： Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

IPC: G21G5/00

CPC classification number: H01J37/08 ,  H01J37/24 ,  H01J2237/0815 ,  H01J2237/31749 ,  H05H1/36

Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Abstract translation: 公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量 样品和多个孔。 等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。 等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。 通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。 通过适当的孔隙材料选择使孔径的离子束溅射最小化。

公开(公告)号：US08445870B2

公开(公告)日：2013-05-21

申请号：US13338456

申请日：2011-12-28

Applicant: Shouyin Zhang ,  Tom Miller ,  Sean Kellog ,  Anthony Graupera

Inventor： Shouyin Zhang ,  Tom Miller ,  Sean Kellog ,  Anthony Graupera

IPC: H01J37/30 ,  H01J37/302

CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Abstract translation: 一种在采用电感耦合等离子体离子源的聚焦离子束（FIB）系统中进行铣削和成像的方法，其中使用两组FIB系统操作参数：第一组，表示用于在铣削中操作FIB系统的优化参数 模式，以及表示用于在成像模式下操作的优化参数的第二组。 这些操作参数可以包括ICP源中的气体压力，ICP源的RF功率，离子提取电压，以及在一些实施例中，FIB系统离子列内的各种参数，包括透镜电压和光束限定孔直径 。 优化的铣削工艺提供了从基材表面快速去除材料的体积（低空间分辨率）的最大研磨速度。 优化的成像过程提供最小化的材料去除和更高的空间分辨率，用于改进正在研磨的衬底区域的成像。