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    Low bias drift modulator with buffer layer
    181.
    发明授权
    Low bias drift modulator with buffer layer 有权

    公开(公告)号：US07324257B2

    公开(公告)日：2008-01-29

    申请号：US11189449

    申请日：2005-07-26

    Applicant: Gregory J. McBrien ,  Karl Kissa ,  Glen Drake ,  Kate Versprille

    Inventor： Gregory J. McBrien ,  Karl Kissa ,  Glen Drake ,  Kate Versprille

    IPC: G02F1/03 ,  G02F1/035 ,  G02F1/29

    CPC classification number: G02F1/0356 ,  G02F1/2255 ,  G02F2201/07 ,  G02F2203/21

    Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.

    Electro-optic waveguide device capable of suppressing bias point DC drift and thermal bias point shift
    182.
    发明授权
    Electro-optic waveguide device capable of suppressing bias point DC drift and thermal bias point shift 有权
    能够抑制偏置点DC漂移和热偏置点偏移的电光波导装置

    公开(公告)号：US07231101B2

    公开(公告)日：2007-06-12

    申请号：US11131634

    申请日：2005-05-18

    Applicant: Hirotoshi Nagata

    Inventor： Hirotoshi Nagata

    IPC: G02F1/035 ,  G02B6/10 ,  G02B6/26

    CPC classification number: G02F1/225 ,  G02F2201/07 ,  G02F2203/21

    Abstract: The present invention discloses an electro-optic waveguide device such as a modulator. The device has an electro-optic substrate having optical waveguides within the substrate at or near an upper surface. A buffer layer is formed on the top surface of the electro-optic substrate. A novel block layer is formed on the buffer layer surface, which can suppress or lessen an unwanted occurrence of chemical reactions at or near the surface of the buffer layer. A charge bleed off layer is formed on the block layer, which has a certain amount of electrical conductivity to bleed off any electrical charges generated on or in the electro-optic waveguide device. Electrodes are on the charge bleed off layer, which can provide electrical signals to the optical waveguides through the buffer layer, the block layer, and the charge bleed off layer.

    Abstract translation: 本发明公开了一种诸如调制器的电光波导器件。 该器件具有在上表面处或附近的衬底内具有光波导的电光衬底。 在电光基板的顶表面上形成缓冲层。 在缓冲层表面上形成新的阻挡层，可以抑制或减少缓冲层表面处或附近不希望有的化学反应的发生。 在阻挡层上形成电荷泄漏层，该阻挡层具有一定量的电导率以渗出在电光波导器件上或其中产生的任何电荷。 电极位于电荷泄漏层上，其可以通过缓冲层，阻挡层和电荷泄漏层向光波导提供电信号。

    Low bias drift modulator with buffer layer
    185.
    发明申请
    Low bias drift modulator with buffer layer 有权
    具有缓冲层的低偏置漂移调制器

    公开(公告)号：US20060023288A1

    公开(公告)日：2006-02-02

    申请号：US11189449

    申请日：2005-07-26

    Applicant: Gregory McBrien ,  Karl Kissa ,  Glen Drake ,  Kate Versprille

    Inventor： Gregory McBrien ,  Karl Kissa ,  Glen Drake ,  Kate Versprille

    IPC: G02F1/03

    CPC classification number: G02F1/0356 ,  G02F1/2255 ,  G02F2201/07 ,  G02F2203/21

    Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses

    Abstract translation: 本发明涉及一种电光调制器结构，其包含埋在该装置内的附加一组偏置电极，用于施加偏压以设定工作点。 因此，用于调制输入光信号的RF电极可以以零直流偏压工作，减少电极腐蚀以及可能存在于非密封封装中的电流和其他影响。 掩埋偏置电极在控制电荷积聚方面也是有利的，随之而来的是漂移特性的改善。 偏置电极材料可用于布置装置内的偏置信号，特别是外部端子，以及形成封装层，以允许在非密封环境中操作，从而降低制造成本。 提出了使用X切割和Z切割的铌酸锂（LiNbO 3 3）的实施例。 对于后者，偏置电极可以沿其轴线分开以避免光损耗

    Optical devices
    188.
    发明授权
    Optical devices 失效
    光学器件

    公开(公告)号：US06873749B2

    公开(公告)日：2005-03-29

    申请号：US10302052

    申请日：2002-11-22

    Applicant: Gary Gibson

    Inventor： Gary Gibson

    IPC: G02B6/12 ,  G02F1/225 ,  G02F1/035

    CPC classification number: G02F1/225 ,  G02B2006/12159 ,  G02F2201/07 ,  G02F2203/21

    Abstract: The present invention relates to optical devices and, more particularly, to optical waveguide devices in which characteristics of a light signal are modulated or changed in accordance with an applied electric field. Conventionally, in such devices, such as, for example, a Mach-Zehnder modulator, DC drift problems, as are well known within the art, must be surmounted if the optical device is to meet minimum performance criteria. Suitably the present invention provides a layer of an oxide of silicon, preferably substantially, free of metallic impurities, where the ratio of oxygen to silicon is greater than 2 and is preferably greater than or equal to 2.2.

    Abstract translation: 本发明涉及光学装置，更具体地说，涉及根据所施加的电场调制或改变光信号的特性的光波导装置。 通常，在这种诸如马赫 - 策德尔调制器的装置中，如果光学装置要达到最低性能标准，则必须克服本技术领域众所周知的直流漂移问题。 本发明适当地提供一层硅，优选基本上不含金属杂质，其中氧与硅的比例大于2，优选大于或等于2.2。

    Semiconductor light modulator
    189.
    发明授权
    Semiconductor light modulator 失效
    半导体光调制器

    公开(公告)号：US06798552B2

    公开(公告)日：2004-09-28

    申请号：US10197559

    申请日：2002-07-18

    Applicant: Hitoshi Tada

    Inventor： Hitoshi Tada

    IPC: G02F103

    CPC classification number: B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2201/066 ,  G02F2201/07

    Abstract: A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained.

    Abstract translation: 在MQW吸收层和p-InP覆盖层之间提供具有比MQW（多量子阱）吸收层的带隙能量大的带隙能量并且小于p-InP覆盖层的带隙能量的带间断层， 。 此外，在MQW吸收层和n-InP覆盖层之间设置有具有比MQW吸收层的带隙能量大的带隙能量并且小于n-InP覆盖层的带隙能量减少层。 因此，随着载流子的堆积被抑制，可以获得具有增强的响应速度的半导体光调制器。

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