公开(公告)号：US07781296B2

公开(公告)日：2010-08-24

申请号：US11570731

申请日：2005-06-07

Applicant: Aomar Halimaoui ,  Rebha El Farhane ,  Benoit Froment

Inventor： Aomar Halimaoui ,  Rebha El Farhane ,  Benoit Froment

IPC: H01L21/20

CPC classification number: H01L28/84 ,  H01L28/90

Abstract: An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.

Abstract translation: 集成电路（IC）包括至少一个具有金属电极的电容器。 至少一个电极（10或30）由至少表面硅化半球形硅或硅合金形成。 还提供了用硅化金属电极获得这种电容器的制造工艺。

公开(公告)号：US07569482B2

公开(公告)日：2009-08-04

申请号：US11654388

申请日：2007-01-15

Applicant: Aomar Halimaoui

Inventor： Aomar Halimaoui

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/32134 ,  H01L21/02068 ,  H01L21/28518

Abstract: An integrated circuit is silicided by depositing at least one metal on a silicon-containing region and forming a metal silicide. Residue metal that has not been silicided during the formation of the metal silicide is then removed. The removal of the residue metal involves the conversion of the residue metal to an alloy containing the germanide of said metal with minimal if any adverse affect on the silicide. Next, the alloy is removed, in a manner selective to the silicide, by dissolving the alloy in a chemical solution.

Abstract translation: 通过在含硅区域上沉积至少一种金属并形成金属硅化物将集成电路硅化。 然后去除在金属硅化物形成期间未被硅化的残余金属。 残留金属的去除涉及如果对硅化物有任何不利影响，则残留金属转化为含有所述金属的锗化物的合金。 接下来，通过将合金溶解在化学溶液中，以对硅化物有选择的方式除去合金。

公开(公告)号：US20070197029A1

公开(公告)日：2007-08-23

申请号：US11654388

申请日：2007-01-15

Applicant: Aomar Halimaoui

Inventor： Aomar Halimaoui

IPC: H01L21/44

CPC classification number: H01L21/32134 ,  H01L21/02068 ,  H01L21/28518

Abstract: An integrated circuit is silicided by depositing at least one metal on a silicon-containing region and forming a metal silicide. Residue metal that has not been silicided during the formation of the metal silicide is then removed. The removal of the residue metal involves the conversion of the residue metal to an alloy containing the germanide of said metal with minimal if any adverse affect on the silicide. Next, the alloy is removed, in a manner selective to the silicide, by dissolving the alloy in a chemical solution.

Abstract translation: 通过在含硅区域上沉积至少一种金属并形成金属硅化物将集成电路硅化。 然后去除在金属硅化物形成期间未被硅化的残余金属。 残留金属的去除涉及如果对硅化物有任何不利影响，则残留金属转化为含有所述金属的锗化物的合金。 接下来，通过将合金溶解在化学溶液中，以对硅化物有选择的方式除去合金。

公开(公告)号：US20060088988A1

公开(公告)日：2006-04-27

申请号：US11258402

申请日：2005-10-25

Applicant: Aomar Halimaoui ,  Frederic Boeuf

Inventor： Aomar Halimaoui ,  Frederic Boeuf

IPC: H01L21/04

CPC classification number: H01L21/225 ,  H01L21/22 ,  H01L29/165 ,  H01L29/66477 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

Abstract: A method for forming silicon-germanium in the upper portion of a silicon substrate, including the steps of: depositing a germanium layer doped at a concentration in dopant elements greater than 1019 atoms per cm3 on a silicon substrate; heating to have the germanium diffuse into the silicon substrate to form a doped silicon-germanium layer in the upper portion of the silicon substrate; and eliminating the germanium layer.

Abstract translation: 一种用于在硅衬底的上部形成硅 - 锗的方法，包括以下步骤：在掺杂剂元素中沉积掺杂浓度大于10原子/ cm 3的锗层 在硅衬底上; 加热以使锗扩散到硅衬底中以在硅衬底的上部形成掺杂的硅 - 锗层; 并消除锗层。

公开(公告)号：US06177235B1

公开(公告)日：2001-01-23

申请号：US08996684

申请日：1997-12-23

Applicant: Jean Marc Francou ,  Aomar Halimaoui ,  Andr{acute over (e)} Schiltz

Inventor： Jean Marc Francou ,  Aomar Halimaoui ,  Andr{acute over (e)} Schiltz

IPC: G03F726

CPC classification number: H01L21/0276 ,  Y10S430/151 ,  Y10S438/96 ,  Y10S438/964

Abstract: The present invention relates to an improved photolithography process particularly suitable for high-resolution optical lithography techniques using the g, h and i lines of the spectrum of mercury and short-wavelength UV, comprising, prior to deposition of the photosensitive resin on the layer of material to be lithographically patterned, the formation of an antireflective porous layer within the said layer to be lithographically patterned and on the surface of the latter.

Abstract translation: 本发明涉及一种改进的光刻工艺，特别适用于使用汞和短波长紫外光谱的g，h和i线的高分辨率光刻技术，包括在将感光树脂沉积在 待光刻图案的材料，在所述层内形成抗光反射多孔层以进行光刻图案化，并在其表面上形成。

公开(公告)号：US20120161292A1

公开(公告)日：2012-06-28

申请号：US13330146

申请日：2011-12-19

Applicant: Aomar Halimaoui ,  Marc Zussy

Inventor： Aomar Halimaoui ,  Marc Zussy

IPC: H01L29/02 ,  H01L21/762

CPC classification number: H01L29/0657 ,  H01L21/76251 ,  H01L29/16

Abstract: A process for assembling a first wafer and a second wafer each bevelled on their peripheries includes excavating the bevelled peripheral part of at least one first side of the first wafer to create a deposit bordering the region excavated in the material of the first wafer. The first side and a second side of the second wafer are then bonded together.

Abstract translation: 一种组装第一晶片和第二晶片的方法，每个在它们的周边上都是倾斜的，包括挖掘第一晶片的至少一个第一侧的斜切周边部分，以形成与在第一晶片的材料中挖出的区域接壤的沉积物。 然后将第二晶片的第一面和第二面接合在一起。

公开(公告)号：US20120094470A1

公开(公告)日：2012-04-19

申请号：US13240769

申请日：2011-09-22

Applicant: Daniel Bensahel ,  Aomar Halimaoui

Inventor： Daniel Bensahel ,  Aomar Halimaoui

IPC: H01L21/762

CPC classification number: H01L29/7849 ,  H01L21/187 ,  H01L21/3063 ,  H01L29/06 ,  H01L29/32 ,  H01L29/78

Abstract: A method for forming an electronic circuit on a strained semiconductor substrate, including the steps of: forming, on a first surface of a semiconductor substrate, electronic components defining electronic chips to be sawn; and forming at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.

Abstract translation: 一种在应变半导体衬底上形成电子电路的方法，包括以下步骤：在半导体衬底的第一表面上形成限定要锯切的电子芯片的电子部件; 以及在所述半导体衬底的与所述第一表面相对的一侧的所述一侧上形成多孔半导体材料层的至少一部分以弯曲所述半导体衬底。

公开(公告)号：US20100289123A1

公开(公告)日：2010-11-18

申请号：US12679271

申请日：2008-09-26

Applicant: Aomar Halimaoui

Inventor： Aomar Halimaoui

IPC: H01L29/02 ,  H01L21/20

CPC classification number: H01L29/0649 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/76262 ,  H01L21/764

Abstract: A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer.

Abstract translation: 一种用于制造在绝缘层上延伸的硅层的方法，包括以下步骤：在硅晶片的至少一部分上形成硅 - 锗层; 将硅 - 锗层的部分转变成多孔硅垫; 在硅 - 锗层和多孔硅垫上生长单晶硅层; 去除硅 - 锗层; 氧化多孔硅垫; 以及在所述硅层上沉积绝缘材料。

公开(公告)号：US20080197447A1

公开(公告)日：2008-08-21

申请号：US12031202

申请日：2008-02-14

Applicant: Aomar Halimaoui ,  Yves Morand ,  Yves Campidelli ,  Olivier Kermarrec

Inventor： Aomar Halimaoui ,  Yves Morand ,  Yves Campidelli ,  Olivier Kermarrec

IPC: H01L21/782 ,  H01L27/12

CPC classification number: H01L21/76245

Abstract: A method for manufacturing an insulated semiconductor layer, including: forming a porous silicon layer on a single-crystal silicon surface; depositing an insulating material so that it penetrates into the pores of the porous silicon layer; eliminating the insulating material to expose the upper surface of the porous silicon; and growing by epitaxy a semiconductor layer.

Abstract translation: 一种绝缘半导体层的制造方法，包括：在单晶硅表面上形成多孔硅层; 沉积绝缘材料使其渗入多孔硅层的孔中; 消除绝缘材料暴露多孔硅的上表面; 并通过外延生长半导体层。

公开(公告)号：US07279404B2

公开(公告)日：2007-10-09

申请号：US10882995

申请日：2004-07-01

Applicant: Aomar Halimaoui ,  Daniel Bensahel

Inventor： Aomar Halimaoui ,  Daniel Bensahel

IPC: H01L21/20

CPC classification number: H01L21/324 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02694 ,  H01L29/7842 ,  Y10S438/96

Abstract: A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes:a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; andb) the modification of the lattice parameter.

Abstract translation: 一种制造硅或硅/锗合金应变层的工艺包括：a）在具有可修改的材料的层（1）上形成硅层或硅/锗合金层（2） 晶格参数 和b）修改晶格参数。