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    ENZYMATIC HYDROLYSIS OF STARCH
    12.
    发明申请
    ENZYMATIC HYDROLYSIS OF STARCH 审中-公开
    淀粉酶水解

    公开(公告)号：US20080102497A1

    公开(公告)日：2008-05-01

    申请号：US11619314

    申请日：2007-01-03

    Applicant: Dominic Wong ,  Arun Kumar Uppalanchi ,  Xiangdong Gan ,  Bin Zhong

    Inventor： Dominic Wong ,  Arun Kumar Uppalanchi ,  Xiangdong Gan ,  Bin Zhong

    IPC: C12P19/04 ,  C12P19/02 ,  C12N9/32

    CPC classification number: C12P19/14 ,  C12P19/20 ,  C12P19/22

    Abstract: Provided herein are methods of increasing the enzymatic rate of hydrolysis of starch substrates. In certain embodiments the method comprises contacting a starch substrate with one or more amylase family enzymes in the presence of greater than 0.001 mM manganese ions. In certain embodiments, the method comprises contacting a starch substrate with one or more glucoamylase and/or β-amylase enzymes in the presence of greater than 0.001 mM calcium ions (Ca++). In certain embodiments, the method comprises contacting the starch substrate with a β-amylase in the presence of greater than 0.001 mM manganese ion, calcium ion, magnesium ion (Mg++), strontium ion (Sr++), barium ion (Ba++) or any combination of said metal ions. In certain embodiments the method comprises contacting the starch substrate with a glucoamylase in the presence of greater than 0.001 mM manganese ion, calcium ion, lithium ion (Li+), potassium ion (K+), or any combination of said metal ions. Also provided herein are compositions and kits for hydrolyzing starch.

    Abstract translation: 本文提供了增加淀粉底物的酶水解速率的方法。 在某些实施方案中，该方法包括在大于0.001mM锰离子的存在下使淀粉底物与一种或多种淀粉酶家族酶接触。 在某些实施方案中，该方法包括在大于0.001mM钙离子（Ca ++）的存在下使淀粉底物与一种或多种葡糖淀粉酶和/或β-淀粉酶接触。 在某些实施方案中，该方法包括在大于0.001mM的锰离子，钙离子，镁离子（Mg ++），锶离子（Sr < SUP + ++），钡离子（Ba ++）或所述金属离子的任何组合。 在某些实施方案中，所述方法包括在大于0.001mM的锰离子，钙离子，锂离子（Li +）和/或离子（K +）的存在下使淀粉底物与葡糖淀粉酶接触， / SUP>）或所述金属离子的任何组合。 本文还提供用于水解淀粉的组合物和试剂盒。

    ANTI-SCUFF COATING FOR CHOCOLATE
    17.
    发明申请
    ANTI-SCUFF COATING FOR CHOCOLATE 审中-公开
    用于巧克力的防雾涂料

    公开(公告)号：US20090246330A1

    公开(公告)日：2009-10-01

    申请号：US12294290

    申请日：2007-03-26

    Applicant: Bin Zhong ,  Margo McWeeney ,  Stephen A. Santos ,  Alan McGregor

    Inventor： Bin Zhong ,  Margo McWeeney ,  Stephen A. Santos ,  Alan McGregor

    IPC: A23G1/54 ,  A23L1/275 ,  A23L3/28

    CPC classification number: A23P20/105 ,  A23G1/305 ,  A23G1/54 ,  A23G2200/00

    Abstract: Provided herein are methods and compositions for forming a coating on the external surface of a solid chocolate or chocolate-coated product. The method comprises applying at least one layer of a coating composition comprising a solvent selected from water, ethanol, and isopropanol, or any combination thereof and one or more film forming agents to the external surface of the product, and then drying the coating composition to provide a dried coating or film on the external surface of the chocolate. The dried coating renders the external surface of the chocolate more resistant to abrasion or scuffing during processing, packaging, storage, and/or transport. The coating composition of the present invention cures or dries in 30 minutes or less. In certain embodiments, the film or coating cures in 15 minutes or less. In certain embodiments, the film or coating cures in 10 minutes or less.

    Abstract translation: 本文提供了在固体巧克力或巧克力涂层产品的外表面上形成涂层的方法和组合物。 该方法包括将至少一层包含选自水，乙醇和异丙醇的溶剂或其任何组合和一种或多种成膜剂的涂料组合物涂覆到产品的外表面上，然后将涂料组合物干燥至 在巧克力的外表面上提供干燥的涂层或薄膜。 干燥的涂层使得巧克力的外表面在加工，包装，储存和/或运输过程中更耐磨损或磨损。 本发明的涂料组合物在30分钟以内固化或干燥。 在某些实施方案中，薄膜或涂层在15分钟或更短时间内固化。 在某些实施方案中，膜或涂层在10分钟或更短时间内固化。

    Method of removing dummy gate dielectric layer
    18.
    发明授权
    Method of removing dummy gate dielectric layer 有权
    去除虚栅极电介质层的方法

    公开(公告)号：US09570582B1

    公开(公告)日：2017-02-14

    申请号：US15235208

    申请日：2016-08-12

    Applicant: Yu Bao ,  Xiaoqiang Zhou ,  Jun Zhou ,  Bin Zhong ,  Haifeng Zhou

    Inventor： Yu Bao ,  Xiaoqiang Zhou ,  Jun Zhou ,  Bin Zhong ,  Haifeng Zhou

    IPC: H01L21/31 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L21/311 ,  H01L29/51

    CPC classification number: H01L29/66545 ,  H01L21/0206 ,  H01L21/31116 ,  H01L29/517

    Abstract: A method of removing a dummy gate dielectric layer is provided. Firstly a first plasma containing F is utilized to remove the dummy dielectric layer which contains Si and O. Then a second plasma containing H2 is utilized to remove fluorine compound on the surface of the semiconductor substrate. Since the fluorine residue formed after the first plasma treatment reacts with the second plasma to form a gaseous product HF, the fluorine element can be taken away from the semiconductor device with the HF, which prevents inversion layer offset and gate current leakage occurred in the subsequent processing steps due to the fluorine element.

    Abstract translation: 提供一种去除伪栅介质层的方法。 首先，使用包含F的第一等离子体去除含有Si和O的虚拟电介质层。然后使用包含H 2的第二等离子体来除去半导体衬底的表面上的氟化合物。 由于在第一等离子体处理之后形成的氟残余物与第二等离子体反应形成气态产物HF，所以可以用HF将氟元素从半导体器件中取出，从而防止在后续的反应层偏移和栅极电流泄漏 由于氟元素的加工步骤。

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