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    Capacitive surface micromachine absolute pressure sensor and method for processing
    13.
    发明授权
    Capacitive surface micromachine absolute pressure sensor and method for processing 失效
    电容式表面微机械绝对压力传感器及其加工方法

    公开(公告)号：US5316619A

    公开(公告)日：1994-05-31

    申请号：US013919

    申请日：1993-02-05

    申请人： Carlos H. Mastrangelo

    发明人： Carlos H. Mastrangelo

    IPC分类号： G01L7/00 ,  G01L9/00 ,  G01L9/12 ,  H01L29/84 ,  H01L21/306 ,  B44C1/22

    CPC分类号： G01L9/0042 ,  G01L9/0073

    摘要： A polysilicon diaphragm is formed on top of a sacrificial layer deposited upon a semiconductor substrate, where the thickness of the layer is controllable. The sacrificial layer is removed to define a diaphragm cavity, which is sealed with a plug. Electrodes within the surfaces defining the cavity deflect in response to variations in pressure, while providing a very small and minimum parasitic capacitance.

    摘要翻译： 多晶硅隔膜形成在沉积在半导体衬底上的牺牲层的顶部，其中层的厚度是可控的。 去除牺牲层以限定用塞子密封的隔膜腔。 表面内的电极响应于压力变化而限定腔体偏转，同时提供非常小且最小的寄生电容。

    MICROFABRICATED FLEXIBLE GROUND REACTION SENSOR CLUSTER FOR NAVIGATION IN GPS-DENIED ENVIRONMENTS
    15.
    发明申请
    MICROFABRICATED FLEXIBLE GROUND REACTION SENSOR CLUSTER FOR NAVIGATION IN GPS-DENIED ENVIRONMENTS 有权
    全球定位系统环境中的导航灵敏接地灵敏传感器集群

    公开(公告)号：US20120029819A1

    公开(公告)日：2012-02-02

    申请号：US13192328

    申请日：2011-07-27

    申请人： Carlos H. Mastrangelo ,  Rajesh Surapaneni

    发明人： Carlos H. Mastrangelo ,  Rajesh Surapaneni

    IPC分类号： G01C21/16 ,  C23C16/04 ,  C23C16/48 ,  G01R27/26 ,  G06F15/00

    CPC分类号： G01C22/006

    摘要： Embodiments are directed to a ground reaction sensor cluster (GRSC) and to methods for precisely determining zero velocity points and bearing changes using a GRSC and for navigating using a GRSC and an inertial motion unit (IMU) in a global positioning satellite (GPS)-denied environment. The GRSC device itself includes an array of capacitive pressure and shear sensors. The array includes multiple flexible capacitive sensor cells that detect changes in capacitance in response to a footstep. Each cell of the array includes multiple overlapping, fingered capacitors that detect pressure and shear force by determining the change in capacitance in each fingered capacitor. The GRSC device also includes a multiplexing receiver that receives the capacitance inputs from each of the capacitive sensor cells. The multiplexing receiver and other electronic elements further process the received capacitance inputs to determine, based on the pressure and shear forces, the direction and bearing of the footstep.

    摘要翻译： 实施例涉及地面反应传感器簇（GRSC）以及用于使用GRSC精确地确定零速度点和承载变化以及使用全球定位卫星（GPS）中的GRSC和惯性运动单元（IMU）导航的方法 - 否认环境。 GRSC设备本身包括电容式压力和剪切传感器阵列。 该阵列包括响应于脚步检测电容变化的多个柔性电容式传感器单元。 阵列的每个单元包括多个重叠的指尖电容器，通过确定每个指形电容器中的电容变化来检测压力和剪切力。 GRSC设备还包括多路复用接收器，其接收来自每个电容式传感器单元的电容输入。 复用接收机和其他电子元件进一步处理接收的电容输入，以基于压力和剪切力来确定脚步的方向和方位。

    Method for producing a silicon-on-insulator capacitive surface micromachined absolute pressure sensor
    17.
    发明授权
    Method for producing a silicon-on-insulator capacitive surface micromachined absolute pressure sensor 失效
    绝缘体上电容式表面微加工绝对压力传感器的制造方法

    公开(公告)号：US5470797A

    公开(公告)日：1995-11-28

    申请号：US331445

    申请日：1994-10-31

    申请人： Carlos H. Mastrangelo

    发明人： Carlos H. Mastrangelo

    IPC分类号： G01L1/14 ,  B81B3/00 ,  G01L9/00 ,  G01L9/12 ,  H01L29/84 ,  H01L21/46

    CPC分类号： G01L9/0042 ,  G01L9/0073

    摘要： A method and structure for forming a capacitive transducer having a deformable single crystal diaphragm. A first well region is formed within a semiconductor substrate in an SOI wafer having a sacrificial layer of known thickness and a top single-crystal silicon layer thereon. Next, a silicon, epitaxial layer is deposited on the top silicon layer for forming a flexible single crystal membrane. The epitaxial layer and the sacrificial layer are masked and etched to define the flexible diaphragm. An electrical insulating conformal support layer is deposited on the substrate and attached to the diaphragm so as to seal the sacrificial layer therebetween. An access opening is etched through the diaphragm, and then a wet etchant is inserted through the access opening for removing the sacrificial layer, thereby defining a diaphragm cavity between the remaining epitaxial layer and the substrate. Conductive ions are diffused into facing sections of the diaphragm and the first well of the substrate so as to define fixed and deformable electrodes of the sensing capacitor. Next, a plug is selectively deposited within and for sealing the access opening without substantially reducing the volume of the diaphragm cavity.

    摘要翻译： 一种用于形成具有可变形单晶振膜的电容换能器的方法和结构。 第一阱区形成在具有已知厚度的牺牲层的SOI晶片的半导体衬底内，并且其上的顶部单晶硅层。 接下来，在顶部硅层上沉积硅，外延层以形成柔性单晶膜。 外延层和牺牲层被掩模和蚀刻以限定柔性隔膜。 电绝缘保形支撑层沉积在衬底上并附着到膜片上，以密封其间的牺牲层。 通过隔膜蚀刻进入口，然后通过进入开口插入湿蚀刻剂以除去牺牲层，从而在剩余的外延层和基底之间限定隔膜腔。 导电离子扩散到膜片的面对部分和衬底的第一阱中，以便限定感测电容器的固定和变形的电极。 接下来，塞子被选择性地沉积在密封入口中并且用于密封入口开口，而基本上不减小隔膜空腔的体积。

    Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
    18.
    发明授权
    Silicon-on-insulator capacitive surface micromachined absolute pressure sensor 失效
    绝缘体上电容式表面微加工绝对压力传感器

    公开(公告)号：US5369544A

    公开(公告)日：1994-11-29

    申请号：US43044

    申请日：1993-04-05

    申请人： Carlos H. Mastrangelo

    发明人： Carlos H. Mastrangelo

    IPC分类号： G01L1/14 ,  B81B3/00 ,  G01L9/00 ,  G01L9/12 ,  H01L29/84 ,  H01G7/00

    CPC分类号： G01L9/0042 ,  G01L9/0073

    摘要： A method and structure for forming a capacitive transducer having a deformable single crystal diaphragm. A first well region is formed within a semiconductor substrate in an SOI wafer having a sacrificial layer of known thickness and a top single-crystal silicon layer thereon. Next, a silicon epitaxial layer is deposited on the top silicon layer for forming a flexible single crystal membrane. The epitaxial layer and the sacrificial layer are masked and etched to define the flexible diaphragm. An electrical insulating conformal support layer is deposited on the substrate and attached to the diaphragm so as to seal the sacrificial layer therebetween. An access opening is etched through the diaphragm, and then a wet etchant is inserted through the access opening for removing the sacrificial layer, thereby defining a diaphragm cavity between the remaining epitaxial layer and the substrate. The thickness of the diaphragm cavity is substantially equal to the thickness of the sacrificial layer removed from the SOI wafer. Conductive ions are diffused into facing sections of the diaphragm and the first well of the substrate so as to define fixed and deformable electrodes of the sensing capacitor. Next, a plug is selectively deposited within and for sealing the access opening without substantially reducing the volume of the diaphragm cavity. In this manner, a deflection of the flexible diaphragm in response to variations between the ambient pressure and the pressure sealed within the diaphragm cavity causes a o corresponding change in the capacitance between the first well region and the conductive region in the diaphragm. A reference capacitive sensor of similar construction is also provided for ratiometric pressure measurements. A pressure transducer manufactured in accordance with this process is also described.

    摘要翻译： 一种用于形成具有可变形单晶振膜的电容换能器的方法和结构。 第一阱区形成在具有已知厚度的牺牲层的SOI晶片的半导体衬底内，并且其上的顶部单晶硅层。 接下来，在顶部硅层上沉积硅外延层以形成柔性单晶膜。 外延层和牺牲层被掩模和蚀刻以限定柔性隔膜。 电绝缘保形支撑层沉积在衬底上并附着到膜片上，以密封其间的牺牲层。 通过隔膜蚀刻进入口，然后通过进入开口插入湿蚀刻剂以除去牺牲层，从而在剩余的外延层和基底之间限定隔膜腔。 隔膜腔的厚度基本上等于从SOI晶片去除的牺牲层的厚度。 导电离子扩散到膜片的面对部分和衬底的第一阱中，以便限定感测电容器的固定和变形的电极。 接下来，塞子被选择性地沉积在密封入口中并且用于密封入口开口，而基本上不减小隔膜空腔的体积。 以这种方式，响应于环境压力和密封在隔膜腔内的压力之间的变化，柔性膜片的偏转导致第一阱区域和隔膜中的导电区域之间的电容的相应变化。 还提供了一种类似结构的参考电容式传感器用于比例压力测量。 还描述了根据该方法制造的压力传感器。

    Dry-release method for sacrificial layer microstructure fabrication
    19.
    发明授权
    Dry-release method for sacrificial layer microstructure fabrication 失效
    用于牺牲层微结构制造的干式释放方法

    公开(公告)号：US5258097A

    公开(公告)日：1993-11-02

    申请号：US974570

    申请日：1992-11-12

    申请人： Carlos H. Mastrangelo

    发明人： Carlos H. Mastrangelo

    IPC分类号： H01L21/302 ,  B23P15/00 ,  B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/68 ,  B44C1/22 ,  B29C37/00 ,  C03C15/00 ,  C23F1/00

    CPC分类号： B81C1/00944 ,  B23P15/00 ,  G01P15/0802 ,  H01L21/6835 ,  B81C2201/0132

    摘要： A dry-release method for sacrificial layer microstructure fabrication is provided in which a structural layer is anchored to a substrate and deposited on a sacrificial layer located therebetween. Thereafter, holes are etched through the structural layer. Some of the holes are covered with a polymer layer, and portions of the sacrificial layer are then etched through the uncovered holes in the structural layer, creating void areas extending to the substrate. Preferably, the void areas also include undercut areas. The void areas are then filled with a protective polymer layer, creating temporary posts that extend from the surface of the substrate to the structural layer. The sacrificial layer is then removed by means of wet etching. The temporary posts provide support for the structural layer against capillary forces which are created by the evaporation of liquids used in the wet etching process. After wet etching of the sacrificial layer is completed, the temporary posts are removed by a dry etching technique. The resulting microstructure consists of a free-standing structural layer that is anchored to the substrate.

    摘要翻译： 提供了用于牺牲层微结构制造的干式释放方法，其中将结构层锚定到基底并沉积在位于其间的牺牲层上。 此后，通过结构层蚀刻孔。 一些孔被聚合物层覆盖，然后通过结构层中的未覆盖的孔蚀刻部分牺牲层，从而产生延伸到基底的空隙区域。 优选地，空隙区域还包括底切区域。 然后用保护性聚合物层填充空隙区域，产生从基底表面延伸到结构层的临时柱。 然后通过湿蚀刻除去牺牲层。 临时柱为结构层提供抵抗毛细管力的支撑，这是通过湿法蚀刻工艺中使用的液体的蒸发产生的。 在牺牲层的湿蚀刻完成之后，通过干蚀刻技术去除临时柱。 所得微结构由固定在基底上的自立结构层组成。