公开(公告)号：US08263426B2

公开(公告)日：2012-09-11

申请号：US12509360

申请日：2009-07-24

Applicant: Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

Inventor： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

IPC: H01L21/00

CPC classification number: G01P15/0802 ,  G01H11/06 ,  G01P1/023 ,  G01P15/125 ,  H04R19/005

Abstract: Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

Abstract translation: 提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为 掺杂多晶硅层由于z轴振动而移动。 特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱 频率如地震波。 因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波 和低振动速度。 此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。

公开(公告)号：US20120153778A1

公开(公告)日：2012-06-21

申请号：US13316590

申请日：2011-12-12

Applicant: Chi Hoon JUN ,  Sang Choon KO ,  Jong Tae MOON

Inventor： Chi Hoon JUN ,  Sang Choon KO ,  Jong Tae MOON

IPC: H02N2/18 ,  H01L41/22

CPC classification number: H01L41/29 ,  H01L41/1136 ,  H01L41/31 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H02N2/188 ,  Y10T29/42

Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.

Abstract translation: 公开了一种压电微能量收集器及其制造方法，该方法包括：在基板上形成绝缘膜; 图案化绝缘膜并形成电极焊盘图案，中心电极图案和侧面电极图案; 在所述基板的内部形成开放空腔，以悬浮所述中心电极图案和所述侧面电极图案; 在电极焊盘图形，中心电极图案和侧面电极图案上设置导电膜，形成电极焊盘，中心电极和侧面电极; 以及形成压电膜以覆盖中心电极和侧电极之间的空间以及中心电极和侧电极的上表面。

公开(公告)号：US07664357B2

公开(公告)日：2010-02-16

申请号：US11945551

申请日：2007-11-27

Applicant: Hyun Woo Song ,  Sang Choon Ko

Inventor： Hyun Woo Song ,  Sang Choon Ko

IPC: G02B6/26 ,  G02B6/30 ,  G02B6/122

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02B6/4204 ,  G02B6/4246

Abstract: Provided are a photonic-crystal plate that forms an optical waveguide and an optical device assembly using the same, and more particularly, a vertical-type photonic-crystal plate and an optical device assembly configured to be easily integrated with surface-emitting light source devices and surface-receiving light detector devices. The photonic-crystal plate includes a plurality of cylindrical through holes formed in a thickness direction and arranged in a periodic crystal lattice structure. The plate further includes: a main crystal lattice defect that forms a main optical waveguide for passing lights in a direction perpendicular to the photonic-crystal plate; and a sub-crystal lattice defect that forms a sub-optical waveguide for causing light in a specific wavelength band among the lights passing through the main optical waveguide to be optically coupled and passing the coupled light in the direction perpendicular to the photonic-crystal plate.

Abstract translation: 提供一种形成光波导的光子晶体板和使用该光波导的光学器件组件，更具体地，涉及一种垂直型光子晶体板和光学器件组件，其被配置为容易地与表面发射光源器件 和表面接收光检测器装置。 光子晶体板包括沿厚度方向形成并以周期性晶格结构排列的多个圆柱形通孔。 该板还包括：主晶格缺陷，其形成用于使光沿垂直于光子晶体板的方向通过的主光波导; 以及亚晶格缺陷，其形成用于使通过主光波导的光中的特定波长带的光光耦合并使耦合的光沿垂直于光子晶体板的方向通过的子光波导 。

公开(公告)号：US20090151429A1

公开(公告)日：2009-06-18

申请号：US12142695

申请日：2008-06-19

Applicant: Chi Hoon JUN ,  Sang Choon KO ,  Moon Youn JUNG ,  Seon Hee PARK

Inventor： Chi Hoon JUN ,  Sang Choon KO ,  Moon Youn JUNG ,  Seon Hee PARK

IPC: G01N9/00 ,  H01L21/00

CPC classification number: G01N33/0027 ,  G01N27/128

Abstract: Provided is a micro gas sensor including: a substrate; an open cavity and electrode pad separation grooves formed on the substrate; a plurality of electrode pads formed on an upper portion of the substrate and electrically insulated from each other by the electrode pad separation grooves; a micro heater connected to a plurality of the electrode pads by a bridge structure and suspended on the open cavity; a plurality of sensing electrodes formed on the same plane between the micro heater and a plurality of the electrode pads in a cantilever array and suspended on the open cavity; and a gas sensing film formed to be hung down between microelectrode finger spacings of a plurality of the sensing electrodes to represent changes in characteristics according to a gas concentration by contacting surfaces of the micro heater and a plurality of the sensing electrodes. Therefore, the micro gas sensor can have low power consumption, a rapid heating and cooling time, high durability, high sensitivity characteristics, and a capability of easily forming a gas sensing film by using various materials. In addition, the micro gas sensor can be miniaturized and mass-produced at low cost in a simple structure using only a single pattern mask.

Abstract translation: 提供一种微气体传感器，包括：基板; 形成在所述基板上的开放空腔和电极焊盘分离槽; 多个电极焊盘，其形成在所述基板的上部并且由所述电极焊盘分离槽彼此电绝缘; 微加热器，其通过桥结构连接到多个电极焊盘并悬挂在所述开放空腔上; 多个感测电极，形成在微加热器和悬臂式悬臂之间的多个电极焊盘的同一平面上; 以及气体传感膜，其被形成为悬挂在多个感测电极的微电极指间隔之间，以通过接触微加热器的表面和多个感测电极来表示根据气体浓度的特性变化。 因此，微气体传感器可以具有低功耗，快速的加热和冷却时间，高耐久性，高灵敏度特性，以及通过使用各种材料容易地形成气体感测膜的能力。 此外，微型气体传感器可以在仅使用单一图案掩模的简单结构中以低成本小型化和批量生产。

公开(公告)号：US20080185128A1

公开(公告)日：2008-08-07

申请号：US11815364

申请日：2006-01-10

Applicant: Seok Hwan Moon ,  Gunn Hwang ,  Sang Choon Ko ,  Sung Weon Kang ,  Chang Auck Choi

Inventor： Seok Hwan Moon ,  Gunn Hwang ,  Sang Choon Ko ,  Sung Weon Kang ,  Chang Auck Choi

IPC: F28D15/02

CPC classification number: F28D15/046 ,  F28D15/0233 ,  F28F1/022

Abstract: Provided is a flat plate-type heat pipe formed of a flat pipe having a predetermined through-hole formed therein and a plurality of grooves extending from an inner surface of the through-hole in a longitudinal direction so that, while the interior of the heat pipe is in a vacuum state, heat in the heat pipe is discharged to the exterior due to a phase change of between liquid and gaseous states of working fluid and the working fluid flows by a capillary force produced from the plurality of grooves, whereby it is possible to obtain a strong capillary force and an excellent cooling effect while it is manufactured through a simple process.

Abstract translation: 本发明提供一种平面型热管，其由具有形成在其中的预定通孔的扁平管形成，以及沿着纵向方向从通孔的内表面延伸的多个槽，使得在热的内部 管处于真空状态，由于工作流体的液态和气态之间的相变，热管中的热量被排出到外部，并且工作流体由多个槽产生的毛细管力流动，由此 可以通过简单的工艺制造而获得强的毛细管力和优异的冷却效果。

公开(公告)号：US20060071146A1

公开(公告)日：2006-04-06

申请号：US10959939

申请日：2004-10-05

Applicant: Felix Cheang ,  Fook Ng ,  Choon Ko

Inventor： Felix Cheang ,  Fook Ng ,  Choon Ko

IPC: G01N21/86

CPC classification number: G01J1/04 ,  G01J1/0455 ,  G01J1/32 ,  G02F1/133609 ,  G02F1/133621 ,  G02F2001/13312 ,  G02F2201/58 ,  G09G3/3413 ,  G09G2320/0242 ,  G09G2320/0626 ,  G09G2360/145

Abstract: In one embodiment, apparatus is provided with a light source, an optic element, at least one photosensor, and a control system. The optic element has a reflective material on a surface thereof, and is positioned to receive and reflect light emitted by the light source. The at least one photosensor is mounted to the surface of the optic element on which the reflective material resides, over a portion of the optic element on which the reflective material does not reside. The control system is operably associated with both the photosensor(s) and the light source, to regulate the light source's light output in accordance with measurements received from the photosensor(s).

Abstract translation: 在一个实施例中，设备设置有光源，光学元件，至少一个光电传感器和控制系统。 光学元件在其表面上具有反射材料，并且被定位成接收和反射由光源发射的光。 所述至少一个光电传感器安装到所述反射材料所在的光学元件的表面上，所述光学元件的所述反射材料不在其上的部分上。 控制系统可操作地与光电传感器和光源相关联，以根据从光电传感器接收的测量来调节光源的光输出。

公开(公告)号：US08772833B2

公开(公告)日：2014-07-08

申请号：US13592560

申请日：2012-08-23

Applicant: Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

Inventor： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L29/15

CPC classification number: H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

Abstract: Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.

Abstract translation: 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

公开(公告)号：US20130069127A1

公开(公告)日：2013-03-21

申请号：US13556377

申请日：2012-07-24

Applicant: Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

Inventor： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

IPC: H01L29/78 ,  H01L21/20

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/8128

Abstract: A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.

Abstract translation: 根据本公开的示例性实施例的制造场效应晶体管的方法包括：在衬底上形成有源层，覆盖层，欧姆金属层和绝缘层; 在所述绝缘层上形成多层光致抗蚀剂; 图案化多层光致抗蚀剂以形成包括用于栅电极的第一开口和场电极的第二开口的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻绝缘层，使得第一开口中的绝缘层被更深地蚀刻并且盖层通过第一开口暴露; 通过蚀刻绝缘层通过第一开口蚀刻暴露的盖层，以形成栅极凹陷区域; 以及在所述栅极凹部区域和所述蚀刻绝缘层上沉积金属以形成栅极电极层。

公开(公告)号：US20120152028A1

公开(公告)日：2012-06-21

申请号：US13288988

申请日：2011-11-04

Applicant: Sang Choon KO ,  Chi Hoon Jun

Inventor： Sang Choon KO ,  Chi Hoon Jun

IPC: H02N2/18 ,  H01L41/22 ,  G01L9/00 ,  H01L41/04 ,  G01N27/00

CPC classification number: B60C23/0411 ,  H01L41/1134 ,  H01L41/25 ,  H02N2/186

Abstract: Disclosed are a slim self-powering power supplier using a flexible PCB for a wireless sensor network and a sensor node using the same, and a fabrication method thereof. An exemplary embodiment of the present disclosure provides a self-powering power supplier including: a flexible PCB; a lower electrode positioned on the flexible PCB; a piezoelectric body having a cantilever structure deposited on the lower electrode; and an upper electrode formed on the piezoelectric body.

Abstract translation: 公开了一种使用用于无线传感器网络的柔性PCB和使用其的传感器节点的纤薄的自供电电源及其制造方法。 本公开的示例性实施例提供了一种自供电电源，包括：柔性PCB; 位于柔性PCB上的下电极; 具有沉积在下电极上的悬臂结构的压电体; 以及形成在压电体上的上电极。

公开(公告)号：US07879629B2

公开(公告)日：2011-02-01

申请号：US11927810

申请日：2007-10-30

Applicant: Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

Inventor： Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

IPC: H01L21/00 ,  H01L21/311

CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0136

Abstract: Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.

Abstract translation: 提供了一种用于制造MEMS的浮动结构的方法。 一种用于制造微机电系统（MEMS）的浮动结构的方法，包括以下步骤：a）在衬底上形成包含掺杂有杂质的薄层图案的牺牲层; b）在牺牲层上形成支撑层; c）通过使用随后的方法形成浮在支撑层上的结构; d）形成暴露薄层图案的两侧部分的蚀刻孔; 以及e）通过所述蚀刻孔去除所述牺牲层，以在所述支撑层和所述基底之间形成气隙。