公开(公告)号：US08723222B2

公开(公告)日：2014-05-13

申请号：US13548522

申请日：2012-07-13

Applicant: Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

Inventor： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

IPC: H01L31/102

CPC classification number: H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Abstract translation: 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US20130020649A1

公开(公告)日：2013-01-24

申请号：US13548522

申请日：2012-07-13

Applicant: Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

Inventor： Sung Bum BAE ,  Eun Soo NAM ,  Jae Kyoung MUN ,  Sung Bock KIM ,  Hae Cheon KIM ,  Chull Won JU ,  Sang Choon KO ,  Jong-Won LIM ,  Ho Kyun AHN ,  Woo Jin CHANG ,  Young Rak PARK

IPC: H01L27/088 ,  H01L21/20 ,  H01L27/08

CPC classification number: H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Abstract translation: 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US20110140578A1

公开(公告)日：2011-06-16

申请号：US12862577

申请日：2010-08-24

Applicant: Sang Choon Ko ,  Chang Han Je ,  Ho Jun Ryu ,  Sung Sik Lee ,  Chi Hoon Jun

Inventor： Sang Choon Ko ,  Chang Han Je ,  Ho Jun Ryu ,  Sung Sik Lee ,  Chi Hoon Jun

IPC: H02N2/18

CPC classification number: H01L41/1138 ,  B60C23/0411 ,  H01L41/1136 ,  H02N2/186

Abstract: Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.

Abstract translation: 提供了一种应用于轮胎压力监测系统（TPMS）的无线传感器网络系统的小型压电发电机，用于监测轮胎的内部环境，例如轮胎中的空气压力的变化。 特别地，当安装在轮胎中的气压，温度和加速度传感器的系统在用于汽车的TPMS中运行时，用于TPMS的小压电发电机可以用作电源来代替 常规电池。 压电发电机包括具有用于向外部传输电力的电极的基板，形成在基板上的金属板，以及设置在金属板上的压电体，并将由压电材料产生的电力传递到电极。

公开(公告)号：US07861575B2

公开(公告)日：2011-01-04

申请号：US12142695

申请日：2008-06-19

Applicant: Chi Hoon Jun ,  Sang Choon Ko ,  Moon Youn Jung ,  Seon Hee Park

Inventor： Chi Hoon Jun ,  Sang Choon Ko ,  Moon Youn Jung ,  Seon Hee Park

IPC: G01N7/00 ,  G01N27/12

CPC classification number: G01N33/0027 ,  G01N27/128

Abstract: A micro gas sensor is disclosed including a substrate; an open cavity formed in the substrate; an electrode pad separation groove formed on the substrate; a first and a second electrode pads formed over the substrate and electrically insulated from each other by the electrode pad separation groove; a micro heater connected to the first electrode pad and configured of a bridge structure suspended over the open cavity; a first sensing electrode extending from the first electrode pad and suspended over the open cavity; a second sensing electrode extending from the first electrode pad and suspended over the open cavity; and a gas sensing film electrically coupled to the micro heater and filling a gap between the first and the second sensing electrodes.

Abstract translation: 公开了一种包括基板的微气体传感器; 在所述基板中形成的开放空腔; 形成在所述基板上的电极焊盘分离槽; 第一和第二电极焊盘，形成在所述衬底上并且由所述电极焊盘分离槽彼此电绝缘; 连接到第一电极焊盘并由悬挂在开放空腔上的桥结构构成的微加热器; 第一感测电极，其从所述第一电极焊盘延伸并悬挂在所述开放腔上; 第二感测电极，其从所述第一电极焊盘延伸并悬挂在所述开口腔上; 以及电气耦合到微加热器并填充第一和第二感测电极之间的间隙的气体感测膜。

公开(公告)号：US20080138015A1

公开(公告)日：2008-06-12

申请号：US11945551

申请日：2007-11-27

Applicant: Hyun Woo SONG ,  Sang Choon KO

Inventor： Hyun Woo SONG ,  Sang Choon KO

IPC: G02B6/26 ,  G02B6/122 ,  G02B6/30

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  G02B6/4204 ,  G02B6/4246

Abstract: Provided are a photonic-crystal plate that forms an optical waveguide and an optical device assembly using the same, and more particularly, a vertical-type photonic-crystal plate and an optical device assembly configured to be easily integrated with surface-emitting light source devices and surface-receiving light detector devices. The photonic-crystal plate includes a plurality of cylindrical through holes formed in a thickness direction and arranged in a periodic crystal lattice structure. The plate further includes: a main crystal lattice defect that forms a main optical waveguide for passing lights in a direction perpendicular to the photonic-crystal plate; and a sub-crystal lattice defect that forms a sub-optical waveguide for causing light in a specific wavelength band among the lights passing through the main optical waveguide to be optically coupled and passing the coupled light in the direction perpendicular to the photonic-crystal plate.

Abstract translation: 提供一种形成光波导的光子晶体板和使用该光波导的光学器件组件，更具体地，涉及一种垂直型光子晶体板和光学器件组件，其被配置为容易地与表面发射光源器件 和表面接收光检测器装置。 光子晶体板包括沿厚度方向形成并以周期性晶格结构排列的多个圆柱形通孔。 该板还包括：主晶格缺陷，其形成用于使光沿垂直于光子晶体板的方向通过的主光波导; 以及亚晶格缺陷，其形成用于使通过主光波导的光中的特定波长带的光光耦合并使耦合的光沿垂直于光子晶体板的方向通过的子光波导 。

公开(公告)号：US20080134753A1

公开(公告)日：2008-06-12

申请号：US11951986

申请日：2007-12-06

Applicant: Chi-Hoon JUN ,  Sang-Choon KO ,  Hyeon-Bong PYO ,  Seon-Hee PARK

Inventor： Chi-Hoon JUN ,  Sang-Choon KO ,  Hyeon-Bong PYO ,  Seon-Hee PARK

IPC: G01N7/00

CPC classification number: G01N27/128

Abstract: Provided are a micro gas sensor for measuring a gas concentration configured to achieve a high heating and cooling rate of a gas sensitive layer, achieve temperature uniformity, and achieve durability against thermal impact and mechanical impact; and a method for manufacturing the micro gas sensor. The micro gas sensor includes: a vacuum cavity disposed in a substrate; a support layer covering the vacuum cavity; a sealing layer sealing the support layer and the vacuum cavity; a micro heater disposed on the sealing layer; a plurality of electrodes disposed on the micro heater, insulated from the micro heater; and a gas sensitive layer covering the electrodes.

Abstract translation: 提供一种微气体传感器，用于测量构成为实现气敏感层的高加热和冷却速度的气体浓度，实现温度均匀性，并且实现耐热冲击和机械冲击的耐久性; 以及微气体传感器的制造方法。 微气体传感器包括：设置在基板中的真空腔; 覆盖真空腔的支撑层; 密封层，密封支撑层和真空腔; 设置在密封层上的微加热器; 设置在微加热器上的多个电极，与微加热器绝缘; 以及覆盖电极的气敏层。

公开(公告)号：US20060243893A1

公开(公告)日：2006-11-02

申请号：US11119206

申请日：2005-04-28

Applicant: Fook Ng ,  Tak Cheang ,  Choon Ko ,  Choon Chew

Inventor： Fook Ng ,  Tak Cheang ,  Choon Ko ,  Choon Chew

IPC: G01J1/04

CPC classification number: G01J1/32 ,  G02B6/0036 ,  G02B6/0061 ,  G02B6/0068

Abstract: A light source having a photodetector embedded in a light pipe is disclosed. The light pipe includes a layer of transparent material having top and bottom surfaces and first and second opposing side surfaces that intersect the top and bottom surfaces. In one embodiment, the photodetector is embedded in the layer at a location that is adjacent to the second side surface and a plurality of light emitters are positioned so as to couple light into the layer of material through the first side edge at angles less than or equal to the critical angle for the layer of material. The bottom surface can include protrusions for scattering light toward the top surface. A controller adjusts the intensity of the various light emitters in response to changes in light intensity detected by the photodetector. Light leaving the top surface of the light pipe can be used to illuminate a display.

Abstract translation: 公开了一种具有嵌入在光管中的光电检测器的光源。 光管包括具有顶表面和底表面的透明材料层以及与顶表面和底表面相交的第一和第二相对侧表面。 在一个实施例中，光电检测器被嵌入在与第二侧表面相邻的位置处的层中，并且多个发光体被定位成将光通过第一侧边缘以小于或等于 等于材料层的临界角。 底表面可以包括用于向顶表面散射光的突起。 控制器响应于由光电检测器检测到的光强度的变化来调节各种发光体的强度。 离开光管顶表面的光可用于照亮显示器。

公开(公告)号：US08664833B2

公开(公告)日：2014-03-04

申请号：US13288988

申请日：2011-11-04

Applicant: Sang Choon Ko ,  Chi Hoon Jun

Inventor： Sang Choon Ko ,  Chi Hoon Jun

IPC: H02N2/18

CPC classification number: B60C23/0411 ,  H01L41/1134 ,  H01L41/25 ,  H02N2/186

Abstract: Disclosed are a slim self-powering power supplier using a flexible PCB for a wireless sensor network and a sensor node using the same, and a fabrication method thereof. An exemplary embodiment of the present disclosure provides a self-powering power supplier including: a flexible PCB; a lower electrode positioned on the flexible PCB; a piezoelectric body having a cantilever structure deposited on the lower electrode; and an upper electrode formed on the piezoelectric body.

Abstract translation: 公开了一种使用用于无线传感器网络的柔性PCB和使用其的传感器节点的纤薄的自供电电源及其制造方法。 本公开的示例性实施例提供了一种自供电电源，包括：柔性PCB; 位于柔性PCB上的下电极; 具有沉积在下电极上的悬臂结构的压电体; 以及形成在压电体上的上电极。

公开(公告)号：US08598768B2

公开(公告)日：2013-12-03

申请号：US13316590

申请日：2011-12-12

Applicant: Chi Hoon Jun ,  Sang Choon Ko ,  Jong Tae Moon

Inventor： Chi Hoon Jun ,  Sang Choon Ko ,  Jong Tae Moon

IPC: H01L41/08

CPC classification number: H01L41/29 ,  H01L41/1136 ,  H01L41/31 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H02N2/188 ,  Y10T29/42

Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.

Abstract translation: 公开了一种压电微能量收集器及其制造方法，该方法包括：在基板上形成绝缘膜; 图案化绝缘膜并形成电极焊盘图案，中心电极图案和侧面电极图案; 在所述基板的内部形成开放空腔，以悬浮所述中心电极图案和所述侧面电极图案; 在电极焊盘图形，中心电极图案和侧面电极图案上设置导电膜，形成电极焊盘，中心电极和侧面电极; 以及形成压电膜以覆盖中心电极和侧电极之间的空间以及中心电极和侧电极的上表面。

公开(公告)号：US20130069173A1

公开(公告)日：2013-03-21

申请号：US13592560

申请日：2012-08-23

Applicant: Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

Inventor： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

Abstract: Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode;and a metal configured to connect the field plate and the source electrode.

Abstract translation: 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。