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5019 条记录 (耗时 0.035 秒)

    Method of forming the spacers on lateral flanks of a transistor gate using successive implantation phases
    18.
    发明授权
    Method of forming the spacers on lateral flanks of a transistor gate using successive implantation phases 有权

    公开(公告)号：US12033859B2

    公开(公告)日：2024-07-09

    申请号：US17652324

    申请日：2022-02-24

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Valentin Bacquie ,  Nicolas Posseme

    IPC分类号： H01L21/28 ,  H01L21/3115

    CPC分类号： H01L21/28123 ,  H01L21/31155

    摘要： A method is provided for forming spacers of a gate of a transistor, including: providing an active layer surmounted by a gate; forming a dielectric layer covering the gate and the active layer, the dielectric layer having lateral portions and basal portions; anisotropically modifying the basal portions by implantation of light ions, forming modified basal portions; and removing the modified basal portions by selective etching, so as to form the spacers on the lateral flanks of the gate from the unmodified lateral portions, in which, before the removing step, the anisotropic modification of the basal portions includes n successive implantation phases having implantation energies Γi (i=1 . . . n) which are distinct from each other, the n phases being configured to implant the light ions at different nominal implantation depths.

    DEVICE FOR PROJECTING AN IMAGE FORMED BY A SCREEN
    19.
    发明公开
    DEVICE FOR PROJECTING AN IMAGE FORMED BY A SCREEN 审中-公开

    公开(公告)号：US20240219726A1

    公开(公告)日：2024-07-04

    申请号：US18399969

    申请日：2023-12-29

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Christophe MARTINEZ

    IPC分类号： G02B27/01 ,  G09G3/00

    CPC分类号： G02B27/0172 ,  G09G3/002 ,  G02B2027/0174

    摘要： The invention relates to a device for projecting an image onto an eye, the device comprising:



    a light emitter, configured to emit light waves along various respective emission axes;
    an optical combiner, optically coupled to the light emitter, and configured to form, from each light wave emitted by the light emitter, a collimated light wave that propagates to the pupil of the eye;

    the device being characterized in that:

    the light emitter comprises a screen, comprising various pixels, each pixel being configured to emit a divergent light wave that propagates around an emission axis, the various pixels emitting respective divergent light waves that propagate along various emission axes, respectively;

    the optical combiner is configured to receive each light wave emitted by a pixel and to form a collimated light wave that propagates towards a central position corresponding to the centre of the pupil of the eye.

    Low-temperature method for transfer and healing of a semiconductor layer
    20.
    发明授权
    Low-temperature method for transfer and healing of a semiconductor layer 有权

    公开(公告)号：US12027421B2

    公开(公告)日：2024-07-02

    申请号：US17216842

    申请日：2021-03-30

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Shay Reboh

    IPC分类号： H01L21/78 ,  H01L21/02 ,  H01L21/822

    CPC分类号： H01L21/7806 ,  H01L21/02694 ,  H01L21/8221

    摘要： A method for creating a substrate of the semiconductor on insulator type includes steps of a) providing a donor substrate having a monocrystalline support substrate, a smoothing layer and a semiconductor layer, the smoothing layer forming an etch stop layer with respect to the material of the support substrate; a′) implantation of ion species through the semiconductor layer to form a fragilisation plane; b) creating an assembly by placing the donor substrate and a receiver substrate in contact; and c) transferring the semiconductor layer and at least a part of the smoothing layer by detachment along the fragilization plane. The semiconductor layer provided in a) is monocrystalline. The method may further include, before b), amorphization of at least a part of the semiconductor layer to form an amorphous layer; and during or after c), recrystallization in solid phase of the amorphous layer to form a transferred monocrystalline semiconductor layer.