公开(公告)号：US07986211B2

公开(公告)日：2011-07-26

申请号：US12968022

申请日：2010-12-14

Applicant: Seong-il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Seong-il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01F5/00

CPC classification number: H01F17/0006 ,  H01F2017/0086 ,  H01L28/10

Abstract: Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.

Abstract translation: 提供一种电感器。 电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子，形成在半导体衬底的一侧上的第一导电线，并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子 形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线，以及形成在所述半导体衬底的另一侧上并电连接的第三导电线 连接到第一至第四导电端子中的第一和第三导电端子。

公开(公告)号：US20110143505A1

公开(公告)日：2011-06-16

申请号：US12773216

申请日：2010-05-04

Applicant: Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L21/337

CPC classification number: H01L29/66462

Abstract: Provided is a method for fabricating a field effect transistor. In the method, an active layer and a capping layer are formed on a substrate. A source electrode and a drain electrode is formed on the capping layer. A dielectric interlayer is formed on the substrate, and resist layers having first and second openings with asymmetrical depths are formed on the dielectric interlayer between the source electrode and the drain electrode. The first opening exposes the dielectric interlayer, and the second opening exposes the lowermost of the resist layers. The dielectric interlayer in the bottom of the first opening and the lowermost resist layer under the second opening are simultaneously removed to expose the capping layer to the first opening and expose the dielectric interlayer to the second opening. The capping layer of the first opening is removed to expose the active layer. A metal layer is deposited on the substrate to simultaneously form a gate electrode and a field plate in the first opening and the second opening. The resist layers are removed to lift off the metal layer on the resist layers.

Abstract translation: 提供了一种用于制造场效应晶体管的方法。 在该方法中，在基板上形成有源层和覆盖层。 源极电极和漏电极形成在覆盖层上。 在基板上形成电介质中间层，在源电极和漏极之间的电介质层间形成有具有不对称深度的第一和第二开口的抗蚀剂层。 第一开口露出电介质中间层，第二开口露出最低层的抗蚀剂层。 同时除去第一开口底部的电介质中间层和第二开口下面的最下面的抗蚀剂层，以将覆盖层暴露于第一开口，并将电介质中间层暴露于第二开口。 去除第一开口的覆盖层以暴露活性层。 金属层沉积在基板上，以在第一开口和第二开口中同时形成栅电极和场板。 去除抗蚀剂层以剥离抗蚀剂层上的金属层。

公开(公告)号：US07759703B2

公开(公告)日：2010-07-20

申请号：US12143584

申请日：2008-06-20

Applicant: Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

Inventor： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

IPC: H01L29/737

CPC classification number: H01L27/14643 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14681 ,  H04N5/369

Abstract: A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.

Abstract translation: 提供了与用于激光雷达图像信号单片集成的读出集成电路（ROIC）集成的光电检测器阵列装置及其制造方法。 根据光检测器阵列器件，在InP衬底上同时形成用于选择和输出激光雷达图像信号的光电二极管和控制装置，从而可以简化制造工艺并大大提高产量。 此外，在InP衬底上同时形成光电二极管和控制装置之后，通过使用聚酰亚胺将光电二极管和控制装置电分离。 因此，埋入光电二极管的PN结表面，从而能够减小表面泄漏电流，提高电气可靠性。 此外，可以简化控制装置的结构，从而可以提高图像信号接收特性。

公开(公告)号：US20090146197A1

公开(公告)日：2009-06-11

申请号：US12143584

申请日：2008-06-20

Applicant: Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

Inventor： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L27/14643 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14681 ,  H04N5/369

Abstract: A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.

Abstract translation: 提供了与用于激光雷达图像信号单片集成的读出集成电路（ROIC）集成的光电检测器阵列装置及其制造方法。 根据光检测器阵列器件，在InP衬底上同时形成用于选择和输出激光雷达图像信号的光电二极管和控制装置，从而可以简化制造工艺并大大提高产量。 此外，在InP衬底上同时形成光电二极管和控制装置之后，通过使用聚酰亚胺将光电二极管和控制装置电分离。 因此，埋入光电二极管的PN结表面，从而能够减小表面泄漏电流，提高电气可靠性。 此外，可以简化控制装置的结构，从而可以提高图像信号接收特性。

公开(公告)号：US20090140291A1

公开(公告)日：2009-06-04

申请号：US11635170

申请日：2006-12-07

Applicant: Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

Inventor： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

IPC: H01L31/0304 ,  H01L21/329

CPC classification number: H01L27/14694 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

公开(公告)号：US07068886B2

公开(公告)日：2006-06-27

申请号：US11248467

申请日：2005-10-12

Applicant: Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

Inventor： Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

IPC: G02B6/34 ,  H04J14/02 ,  H01S3/00

CPC classification number: H01S3/10092 ,  G02B6/02085 ,  G02B6/02138 ,  G02B6/02142 ,  G02B6/2932 ,  G02F2/002 ,  H01S3/005 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/4006 ,  H03B28/00

Abstract: Provided is a millimeter wave oscillator for generating a high frequency signal required in wireless communication. The millimeter wave oscillator uses an overwritten fiber Bragg grating and a light detector such that two wavelengths in a certain phase relationship are produced to generate a signal of a millimeter wave band with a high frequency, whereby a light source is readily obtained without signal processing for phase lock.

Abstract translation: 提供了一种用于产生无线通信中所需的高频信号的毫米波振荡器。 毫米波振荡器使用重写的光纤布拉格光栅和光检测器，使得产生具有一定相位关系的两个波长以产生具有高频率的毫米波段的信号，由此容易获得光源而不进行信号处理 锁相。

公开(公告)号：US20060083464A1

公开(公告)日：2006-04-20

申请号：US11248467

申请日：2005-10-12

Applicant: Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

Inventor： Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

IPC: G02B6/34

CPC classification number: H01S3/10092 ,  G02B6/02085 ,  G02B6/02138 ,  G02B6/02142 ,  G02B6/2932 ,  G02F2/002 ,  H01S3/005 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/4006 ,  H03B28/00

Abstract: Provided is a millimeter wave oscillator for generating a high frequency signal required in wireless communication. The millimeter wave oscillator uses an overwritten fiber Bragg grating and a light detector such that two wavelengths in a certain phase relationship are produced to generate a signal of a millimeter wave band with a high frequency, whereby a light source is readily obtained without signal processing for phase lock.

Abstract translation: 提供了一种用于产生无线通信中所需的高频信号的毫米波振荡器。 毫米波振荡器使用重写的光纤布拉格光栅和光检测器，使得产生具有一定相位关系的两个波长以产生具有高频率的毫米波段的信号，由此容易获得光源而不进行信号处理 锁相。

公开(公告)号：US06975796B2

公开(公告)日：2005-12-13

申请号：US10749145

申请日：2003-12-31

Applicant: Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

Inventor： Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

IPC: G02B26/00 ,  G02B6/34 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/16 ,  G02B6/26 ,  H01S3/082 ,  H01S3/30

CPC classification number: G02B6/29319 ,  G02B6/02076 ,  G02B6/278 ,  G02B6/29322 ,  H01S3/0675 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/1608

Abstract: The present invention relates to a millimeter wave frequency band optical oscillator used for an oscillating frequency signal source of millimeter waves transmitted from a repeater to a wireless subscriber in a millimeter wave wireless subscriber communication system for a next-generation (i.e., 5th generation or less) very high speed wireless internet service, wherein a loop mirror and a pair of optical fiber grating mirrors are used. A wavelength fixed type and a wavelength tunable type optical fiber grating mirrors are connected in a serial manner to constitute a dual laser mode resonator capable of simultaneously oscillating two laser modes, which are appropriate to each wavelength. Therefore, it is possible to obtain a laser light source capable of an extremely high frequency (60 GHz or more) modulation by using beat phenomena between two laser modes.

Abstract translation: 本发明涉及一种毫米波频带光学振荡器，用于在下一代的毫米波无线用户通信系统（即，第5代或更少）中从中继器向无线用户发射的毫米波的振荡频率信号源 ）非常高速的无线互联网服务，其中使用环形镜和一对光纤光栅镜。 波长固定型和波长可调型光纤光栅镜以串联方式连接，构成能够同时振荡两种激光模式的双激光模式谐振器，这两种激光模式适合于每种波长。 因此，可以通过使用两种激光模式之间的拍子现象来获得能够进行极高频率（60GHz以上）调制的激光光源。

公开(公告)号：US08710547B2

公开(公告)日：2014-04-29

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L29/72

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US08586462B2

公开(公告)日：2013-11-19

申请号：US13307069

申请日：2011-11-30

Applicant: Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L29/808 ,  H01L21/283

CPC classification number: H01L29/7831 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7787 ,  H01L29/812

Abstract: Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

Abstract translation: 公开了一种制造场效晶体管的方法。 所公开的方法包括：提供半导体衬底; 在半导体衬底的一侧上形成源极欧姆金属层; 在所述半导体衬底的另一侧上形成漏极欧姆金属层; 在所述源欧姆金属层和所述漏极欧姆金属层之间形成栅电极，在所述半导体衬底的上部; 在包括源欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上形成绝缘膜; 以及在绝缘膜的上部形成多个场电极，其中各个场电极下方的绝缘膜具有不同的厚度。