公开(公告)号：US20070009911A1

公开(公告)日：2007-01-11

申请号：US11175605

申请日：2005-07-05

申请人： Han-Soo Joo ,  Eugenio Mende

发明人： Han-Soo Joo ,  Eugenio Mende

IPC分类号： C12Q1/70 ,  C12Q1/68 ,  C12P21/06

CPC分类号： A61K39/12 ,  A61K2039/525 ,  A61K2039/552 ,  C07K14/005 ,  C12N7/00 ,  C12N2770/10022 ,  C12N2770/10034 ,  G01N33/558 ,  G01N33/56983

摘要： This invention provides kits, devices, and methods for the detection of antibodies that recognize one or more proteins and/or antigens from porcine reproductive and respiratory syndrome virus (PRRSV). The antibodies may be in a biological fluid of a PRRSV infected or at risk subject. The invention may be advantageously applied to both the diagnosis and prevention of PRRSV infection.

摘要翻译： 本发明提供用于检测识别来自猪繁殖和呼吸综合征病毒（PRRSV）的一种或多种蛋白质和/或抗原的抗体的试剂盒，装置和方法。 抗体可能在感染或风险受试者的PRRSV的生物液体中。 本发明可有利地应用于PRRSV感染的诊断和预防。

公开(公告)号：US5690940A

公开(公告)日：1997-11-25

申请号：US493265

申请日：1995-06-21

申请人： Han Soo Joo

发明人： Han Soo Joo

IPC分类号： C12N7/00 ,  A61K39/12 ,  A61K39/155 ,  A61P31/12 ,  C12N7/04 ,  C12N15/38 ,  C12R1/93 ,  G01N33/06 ,  C07K14/055 ,  C12N7/01

CPC分类号： A61K39/155 ,  A61K39/12 ,  A61K2039/5254 ,  A61K2039/543 ,  A61K2039/552 ,  C12N2770/10034

摘要： Live or modified live PRRS vaccines for administration to swine are provided which are of low virulence and confer effective immunity against PRRS. The preferred vaccines include virus isolates having average plaque diameters of less than about 2 mm and low pathogenicity. A preferred vaccine includes a small plaque diameter strain, ATCC Accession No. VR2509. The vaccines of the invention may be administered to breeding females or gilts and to weaned piglets, and is effective to immunize the swine against both the respiratory and reproductive forms of the disease.

摘要翻译： 提供了用于猪施用的活的或修饰的活PRRS疫苗，其具有低毒力并赋予对PRRS的有效免疫力。 优选的疫苗包括具有小于约2mm的平均斑块直径和低致病性的病毒分离物。 优选的疫苗包括小斑块直径菌株ATCC保藏号VR2509。 本发明的疫苗可以施用于育种雌性或后备母猪和断奶仔猪，并且有效地免疫猪抵抗该疾病的呼吸和生殖形式。

公开(公告)号：US08675404B2

公开(公告)日：2014-03-18

申请号：US13475204

申请日：2012-05-18

申请人： Hyun-Seung Yoo ,  Sung-Joo Hong ,  Seiichi Aritome ,  Seok-Kiu Lee ,  Sung-Kye Park ,  Gyu-Seog Cho ,  Eun-Seok Choi ,  Han-Soo Joo

发明人： Hyun-Seung Yoo ,  Sung-Joo Hong ,  Seiichi Aritome ,  Seok-Kiu Lee ,  Sung-Kye Park ,  Gyu-Seog Cho ,  Eun-Seok Choi ,  Han-Soo Joo

IPC分类号： G11C16/00

CPC分类号： G11C16/0483 ,  G11C16/26 ,  G11C16/3418

摘要： A reading method of a non-volatile memory device that includes a plurality memory cells that each include one floating gate and two control gates disposed adjacent to the floating gate on two alternate sides of the floating gate, respectively, and two adjacent memory cells share one control gate, the reading method comprising applying a read voltage to control gates of a selected memory cell, applying a second pass voltage to alternate control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates next to the selected memory cell, and applying a first pass voltage that is lower than the second pass voltage to alternate the control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates secondly next to the selected memory cell.

摘要翻译： 一种非易失性存储器件的读取方法，包括分别包括一个浮动栅极和两个控制栅极的多个存储器单元，两个控制栅极分别与浮置栅极的两个交替侧相邻设置，并且两个相邻的存储单元共享一个 所述读取方法包括将读取电压施加到所选择的存储器单元的控制栅极，将第二通过电压施加到与所选择的存储器单元的控制栅极不同的存储单元的控制栅极的替代控制栅极，所述存储器单元从控制栅极开始， 所选择的存储单元，以及施加低于第二通过电压的第一通过电压，以从控制栅极开始的第二选择的存储单元开始，将不同于所选存储单元的控制栅极的存储单元的控制栅极交替 。

公开(公告)号：US08507976B2

公开(公告)日：2013-08-13

申请号：US13605046

申请日：2012-09-06

申请人： Han-Soo Joo

发明人： Han-Soo Joo

IPC分类号： H01L29/792 ,  H01L21/336 ,  H01L29/66

CPC分类号： H01L27/11582

摘要： A nonvolatile memory device includes a gate structure in which a plurality of interlayer dielectric layers and a plurality of gate electrodes are alternately stacked; a pass gate electrode lying under the gate structure; a sub channel hole defined in the pass gate electrode; a pair of main channel holes defined through the gate structure and communicating with the sub channel hole; a channel layer formed on inner walls of the pair of main channel holes and the sub channel hole; and a metallic substance layer contacting the channel layer in the sub channel hole.

摘要翻译： 非易失性存储器件包括栅极结构，其中多个层间电介质层和多个栅电极交替堆叠; 栅极电极位于栅极结构下方; 限定在通过栅电极中的子通道孔; 一对主通道孔，其通过栅极结构限定并与子通道孔连通; 形成在所述一对主通道孔和所述副通道孔的内壁上的通道层; 以及与子通道孔中的沟道层接触的金属物质层。

公开(公告)号：US20110062510A1

公开(公告)日：2011-03-17

申请号：US12881635

申请日：2010-09-14

申请人： Han-Soo JOO

发明人： Han-Soo JOO

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L27/11582 ,  H01L27/11578 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： A non-volatile memory device having a string of a plurality of memory cells that are serially coupled, wherein the string of memory cells includes a plurality of second channels of a pillar type, a first channel coupling lower end portions of the plurality of the second channels with each other, and a plurality of control gate electrodes surrounding the plurality of the second channels.

摘要翻译： 一种具有串行耦合的多个存储单元的串的非易失性存储器件，其中所述存储单元串包括多个柱状的第二通道，第一通道将所述多个第二通道的下端部分 通道，以及围绕多个第二通道的多个控制栅电极。

公开(公告)号：US08461003B2

公开(公告)日：2013-06-11

申请号：US13112767

申请日：2011-05-20

申请人： Han-Soo Joo ,  Sang-Hyun Oh ,  Yu-Jin Park

发明人： Han-Soo Joo ,  Sang-Hyun Oh ,  Yu-Jin Park

IPC分类号： H01L21/336

CPC分类号： H01L27/11556 ,  H01L27/1203

摘要： A method for fabricating a 3D-nonvolatile memory device includes forming a sub-channel over a substrate, forming a stacked layer over the substrate, the stacked layer including a plurality of interlayer dielectric layers that are alternatively stacked with conductive layers, selectively etching the stacked layer to form a first open region exposing the sub-channel, forming a main-channel conductive layer to gap-fill the first open region, selectively etching the stacked layer and the main-channel conductive layer to form a second open region defining a plurality of main channels, and forming an isolation layer to gap-fill the second open region.

摘要翻译： 一种用于制造3D非易失性存储器件的方法，包括在衬底上形成子沟道，在衬底上形成堆叠层，所述堆叠层包括交替层叠有导电层的多个层间电介质层，选择性地蚀刻堆叠 以形成暴露子通道的第一开放区域，形成主通道导电层以间隙填充第一开放区域，选择性地蚀刻堆叠层和主沟道导电层以形成限定多个的第二开口区域 的主通道，并且形成隔离层以间隙填充第二开口区域。

公开(公告)号：US20130128660A1

公开(公告)日：2013-05-23

申请号：US13475204

申请日：2012-05-18

申请人： Hyun-Seung YOO ,  Sung-Joo HONG ,  Seiichi ARITOME ,  Seok-Kiu LEE ,  Sung-Kye PARK ,  Gyu-Seog CHO ,  Eun-Seok CHOI ,  Han-Soo JOO

发明人： Hyun-Seung YOO ,  Sung-Joo HONG ,  Seiichi ARITOME ,  Seok-Kiu LEE ,  Sung-Kye PARK ,  Gyu-Seog CHO ,  Eun-Seok CHOI ,  Han-Soo JOO

IPC分类号： G11C16/04 ,  G11C16/26

CPC分类号： G11C16/0483 ,  G11C16/26 ,  G11C16/3418

摘要： A reading method of a non-volatile memory device that includes a plurality memory cells that each include one floating gate and two control gates disposed adjacent to the floating gate on two alternate sides of the floating gate, respectively, and two adjacent memory cells share one control gate, the reading method comprising applying a read voltage to control gates of a selected memory cell, applying a second pass voltage to alternate control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates next to the selected memory cell, and applying a first pass voltage that is lower than the second pass voltage to alternate the control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates secondly next to the selected memory cell.

摘要翻译： 一种非易失性存储器件的读取方法，包括分别包括一个浮动栅极和两个控制栅极的多个存储器单元，两个控制栅极分别与浮置栅极的两个交替侧相邻设置，并且两个相邻的存储单元共享一个 所述读取方法包括将读取电压施加到所选择的存储器单元的控制栅极，将第二通过电压施加到与所选择的存储器单元的控制栅极不同的存储单元的控制栅极的替代控制栅极，所述存储器单元从控制栅极开始， 所选择的存储单元，以及施加低于第二通过电压的第一通过电压，以从控制栅极开始的第二选择的存储单元开始，将不同于所选存储单元的控制栅极的存储单元的控制栅极交替 。

公开(公告)号：US20120223382A1

公开(公告)日：2012-09-06

申请号：US13238295

申请日：2011-09-21

申请人： Han-Soo Joo ,  Dong-Kee Lee ,  Sang-Hyun Oh

发明人： Han-Soo Joo ,  Dong-Kee Lee ,  Sang-Hyun Oh

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L27/1157 ,  H01L27/11582

摘要： A method for fabricating a non-volatile memory device includes forming a channel link layer and an isolation layer surrounding the channel link layer over a substrate, forming a stack structure having interlayer dielectric layers that are alternately stacked with gate electrode layers over the channel link layer and the isolation layer, and forming a pair of channels connected to the channel link layer through the stack structure, and a memory layer interposed between the channel and the stack structure.

摘要翻译： 一种用于制造非易失性存储器件的方法包括在衬底上形成通道连接层和围绕沟道连接层的隔离层，形成具有层间电介质层的堆叠结构，所述层间绝缘层与通道链路层上的栅极电极层交替堆叠 和隔离层，并且通过堆叠结构形成连接到沟道连接层的一对沟道，以及介于通道和堆叠结构之间的存储层。

公开(公告)号：US20100278859A1

公开(公告)日：2010-11-04

申请号：US12838358

申请日：2010-07-16

申请人： Han-Soo Joo

发明人： Han-Soo Joo

IPC分类号： A61K39/12 ,  A61P31/12 ,  G01N33/53

CPC分类号： A61K39/12 ,  A61K2039/525 ,  A61K2039/552 ,  C07K14/005 ,  C12N7/00 ,  C12N2770/10022 ,  C12N2770/10034 ,  G01N33/558 ,  G01N33/56983

摘要： This invention provides kits, devices, and methods for the detection of antibodies that recognize one or more proteins and/or antigens from porcine reproductive and respiratory syndrome virus (PRRSV). The antibodies may be in a biological fluid of a PRRSV infected or at risk subject. The invention may be advantageously applied to both the diagnosis and prevention of PRRSV infection.

摘要翻译： 本发明提供用于检测识别来自猪繁殖和呼吸综合征病毒（PRRSV）的一种或多种蛋白质和/或抗原的抗体的试剂盒，装置和方法。 抗体可能在感染或风险受试者的PRRSV的生物液体中。 本发明可有利地应用于PRRSV感染的诊断和预防。

公开(公告)号：US07241582B2

公开(公告)日：2007-07-10

申请号：US11175605

申请日：2005-07-05

申请人： Han-Soo Joo ,  Eugenio P. Mende

发明人： Han-Soo Joo ,  Eugenio P. Mende

IPC分类号： G01N33/573 ,  G01N33/53 ,  C12Q1/70 ,  C12N15/09

CPC分类号： A61K39/12 ,  A61K2039/525 ,  A61K2039/552 ,  C07K14/005 ,  C12N7/00 ,  C12N2770/10022 ,  C12N2770/10034 ,  G01N33/558 ,  G01N33/56983

摘要： This invention provides kits, devices, and methods for the detection of antibodies that recognize one or more proteins and/or antigens from porcine reproductive and respiratory syndrome virus (PRRSV). The antibodies may be in a biological fluid of a PRRSV infected or at risk subject. The invention may be advantageously applied to both the diagnosis and prevention of PRRSV infection.