公开(公告)号：US07095068B2

公开(公告)日：2006-08-22

申请号：US10455376

申请日：2003-06-06

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Shinichi Watanabe

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Shinichi Watanabe

IPC分类号： H01L29/76 ,  H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.

摘要翻译： 半导体存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管，包括第一栅电极和第一和第二扩散层，与第一扩散层连接的第一触点，与第一导电氧阻隔膜电连接的第一导电氧阻隔膜 首先接触并且至少覆盖第一接触件的上表面;第一铁电电容器，包括插入在第一和第二电极之间的第一电极，第二电极和第一铁电体膜;以及连接到第一电极的第一连接构件 和第一导电氧阻隔膜。

公开(公告)号：US20060180894A1

公开(公告)日：2006-08-17

申请号：US11142441

申请日：2005-06-02

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

IPC分类号： H01L29/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

公开(公告)号：US20060175645A1

公开(公告)日：2006-08-10

申请号：US11373308

申请日：2006-03-13

申请人： Hiroyuki Kanaya ,  Iwao Kunishima

发明人： Hiroyuki Kanaya ,  Iwao Kunishima

IPC分类号： H01L29/94

CPC分类号： H01L27/11507 ,  H01L28/55

摘要： A semiconductor device includes a switching element formed on a semiconductor substrate, a first interconnect layer formed on the semiconductor substrate and having a first wiring connected to one terminal of the switching element, a ferroelectric capacitor formed on the first interconnect layer and having a first electrode connected to the one terminal of the switching element via the first wiring, a first protective film formed on the ferroelectric capacitor and the first interconnect layer, a second interconnect layer formed on the first protective film and having a second wiring connected to a second electrode of the ferroelectric capacitor and a first interlayer insulating film having a dielectric constant of 4 or more, and a third interconnect layer formed on the second interconnect layer and having a second interlayer insulating film with a dielectric constant of less than 4.

摘要翻译： 半导体器件包括形成在半导体衬底上的开关元件，形成在半导体衬底上并具有连接到开关元件的一个端子的第一布线的第一互连层，形成在第一互连层上并具有第一电极的铁电电容器 通过第一布线连接到开关元件的一个端子，形成在铁电电容器和第一互连层上的第一保护膜，形成在第一保护膜上并具有连接到第二电极的第二布线的第二布线层 铁电电容器和介电常数为4以上的第一层间绝缘膜，以及形成在第二互连层上并具有介电常数小于4的第二层间绝缘膜的第三互连层。

公开(公告)号：US06982444B2

公开(公告)日：2006-01-03

申请号：US10443107

申请日：2003-05-22

申请人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki ,  Yoshinori Kumura

发明人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki ,  Yoshinori Kumura

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/57 ,  H01L28/65

摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

摘要翻译： 提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。 铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。 上部铁电膜被金属化，并防止氢在下部铁电层中扩散。 堆叠的铁电体膜的晶粒优选不同。

公开(公告)号：US06972990B2

公开(公告)日：2005-12-06

申请号：US10858441

申请日：2004-06-02

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

IPC分类号： H01L27/10 ,  G11C11/14 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/57

摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

公开(公告)号：US20050230728A1

公开(公告)日：2005-10-20

申请号：US11107890

申请日：2005-04-18

申请人： Katsuaki Natori ,  Soichi Yamazaki ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Soichi Yamazaki ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/115 ,  H01L31/113

CPC分类号： H01L27/11502 ,  H01L23/5223 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底，铁电电容器，保护膜和辅助电容器。 铁电电容器设置在半导体衬底上方，并且包括插入在上电极和下电极之间的上电极，下电极和铁电体膜。 形成保护膜，覆盖铁电电容器。 辅助电容器设置在铁电电容器外围的电路部分中，并且使用保护膜作为电容器绝缘膜。

公开(公告)号：US20050207202A1

公开(公告)日：2005-09-22

申请号：US10858441

申请日：2004-06-02

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Hiroyuki Kanaya ,  Iwao Kunishima ,  Yoshiro Shimojo

IPC分类号： H01L27/10 ,  G11C11/14 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/22 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/57

摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.

摘要翻译： 铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜， 绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器 铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为 布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

公开(公告)号：US20050181559A1

公开(公告)日：2005-08-18

申请号：US10878051

申请日：2004-06-29

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/20 ,  H01L21/326 ,  H01L21/336 ,  H01L21/479 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： Disclosed is a method of manufacturing a semiconductor device, comprising forming a bottom electrode film of a capacitor above a semiconductor substrate, forming a dielectric film of the capacitor on the bottom electrode film, forming a top electrode film of the capacitor on the dielectric film, and forming a hydrogen barrier film after forming the top electrode film, the hydrogen barrier film preventing hydrogen from diffusing into the dielectric film, wherein forming the hydrogen barrier film includes forming an oxide film containing silicon and nitriding the oxide film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底上形成电容器的底部电极膜，在底部电极膜上形成电容器的电介质膜，在电介质膜上形成电容器的顶部电极膜， 在形成顶电极膜之后形成氢阻挡膜，防止氢扩散到电介质膜中的氢阻挡膜，其中形成氢阻挡膜包括形成含硅氧化膜并氮化氧化膜。

公开(公告)号：US20050176199A1

公开(公告)日：2005-08-11

申请号：US10618616

申请日：2003-07-15

申请人： Tohru Ozaki ,  Iwao Kunishima ,  Toyota Morimoto ,  Hiroyuki Kanaya

发明人： Tohru Ozaki ,  Iwao Kunishima ,  Toyota Morimoto ,  Hiroyuki Kanaya

IPC分类号： H01L27/105 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/336

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second impurity-diffused regions and a gate formed therebetween. A plurality of memory cells are also included in the memory cell block and have lower electrodes connected to the first impurity-diffused regions, ferroelectric films formed on the lower electrodes and first upper electrodes formed on the ferroelectric films and connected to the second impurity-diffused regions. Further included are block selecting transistors formed on the semiconductor substrate and being connected to one end of the memory cell block. Second upper electrodes are also formed adjoined to the block selecting transistors and being disconnected from the first upper electrode of the memory cells.

摘要翻译： 一种半导体存储器件，包括具有形成在半导体衬底上的多个存储晶体管的存储单元块。 存储晶体管包括第一和第二杂质扩散区域以及在它们之间形成的栅极。 多个存储单元也包括在存储单元块中，并且具有连接到第一杂质扩散区的下电极，形成在下电极上的铁电膜和形成在铁电体膜上的第一上电极并连接到第二杂质扩散区 地区。 还包括形成在半导体衬底上并连接到存储单元块的一端的块选择晶体管。 第二上电极也形成为与块选择晶体管相邻并且与存储单元的第一上电极断开连接。

公开(公告)号：US20050110062A1

公开(公告)日：2005-05-26

申请号：US10954183

申请日：2004-10-01

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L29/41 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/76

CPC分类号： H01L28/65 ,  H01L21/7687 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/55

摘要： A semiconductor device comprises a semiconductor substrate including a diffusion area, a capacitor provided above the semiconductor substrate and including a lower electrode, a dielectric film, and an upper electrode, a plug provided between the semiconductor substrate and the capacitor and having a lower end connected to the diffusion area and an upper end connected to the lower electrode, and a dummy plug provided between the semiconductor substrate and the capacitor and having a lower end not connected to the diffusion area and an upper end connected to the lower electrode.

摘要翻译： 一种半导体器件包括：包括扩散区域的半导体衬底，设置在半导体衬底上方并包括下电极，电介质膜和上电极的电容器，设置在半导体衬底和电容器之间并具有下端连接的插头 扩散区域和连接到下电极的上端，以及设置在半导体衬底和电容器之间并具有未连接到扩散区域的下端和连接到下电极的上端的虚拟插头。