公开(公告)号：US20120085999A1

公开(公告)日：2012-04-12

申请号：US13099806

申请日：2011-05-03

Applicant: I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

Inventor： I-hun Song ,  Yin Huaxiang ,  Sang-hun Jeon ,  Sung-ho Park

IPC: H01L29/12 ,  H01L31/113

CPC classification number: H01L27/14681 ,  H01L27/14692

Abstract: Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

Abstract translation: 示例性实施例公开了晶体管，其制造方法以及包括晶体管的电子器件。 晶体管的有源层可以包括具有不同能带隙的多个材料层（氧化物层）。 有源层可以包括沟道层和感光层。 感光层可以具有单层或多层结构。 当感光层具有多层结构时，感光层可以包括依次层叠在沟道层的表面上的第一材料层和第二材料层。 第一层和第二层可以交替堆叠一次或多次。

公开(公告)号：US08063421B2

公开(公告)日：2011-11-22

申请号：US12007038

申请日：2008-01-04

Applicant: Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

Inventor： Dong-hun Kang ,  Stefanovich Genrikh ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L29/7869

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管可以包括栅极; 一个通道层; 源极和漏极，源极和漏极由金属形成; 和金属氧化物层，金属氧化物层形成在沟道层与源极和漏极之间。 金属氧化物层可以在沟道层和源极和漏极之间具有逐渐变化的金属含量。

公开(公告)号：US08058701B2

公开(公告)日：2011-11-15

申请号：US12216094

申请日：2008-06-30

Applicant: Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

Inventor： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

IPC: H01L23/52

CPC classification number: H01L23/5252 ,  G11C17/16 ,  H01L27/1021 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.

Abstract translation: 提供了防泡结构，反熔丝阵列，制造方法和操作方法。 反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。 反熔丝阵列包括排列成阵列的多个反熔丝结构。

公开(公告)号：US07977978B2

公开(公告)日：2011-07-12

申请号：US12591654

申请日：2009-11-25

Applicant: Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

Inventor： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

IPC: H03K19/00

CPC classification number: H01L21/823807 ,  H01L27/0922 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.

Abstract translation: 提供逆变器，逆变器的制造方法以及包括逆变器的逻辑电路。 反相器可以包括具有不同沟道层结构的第一晶体管和第二晶体管。 第一晶体管的沟道层可以包括下层和上层，并且第二晶体管的沟道层可以与下层和上层之一相同。 下层和上层中的至少一层可以是氧化物层。 逆变器可以是增强/耗尽型（E / D）型逆变器或互补型逆变器。

公开(公告)号：US07919365B2

公开(公告)日：2011-04-05

申请号：US11702211

申请日：2007-02-05

Applicant: Chang-Jung Kim ,  I-Hun Song ,  Dong-Hun Kang ,  Young-Soo Park ,  Eun-Ha Lee

Inventor： Chang-Jung Kim ,  I-Hun Song ,  Dong-Hun Kang ,  Young-Soo Park ,  Eun-Ha Lee

IPC: H01L21/00

CPC classification number: H01L29/7869 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/78618

Abstract: Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

Abstract translation: 提供了制造ZnO薄膜结构和ZnO薄膜晶体管（TFT）的方法，以及ZnO薄膜结构和ZnO薄膜晶体管。 制造ZnO薄膜结构的方法可以包括在氧气氛中在衬底上形成ZnO薄膜，在ZnO薄膜上形成对氧具有亲和性的金属的氧扩散层，并加热ZnO薄膜和氧 扩散层将ZnO薄膜的氧气扩散到氧扩散层中。

公开(公告)号：US07910967B2

公开(公告)日：2011-03-22

申请号：US11515024

申请日：2006-09-05

Applicant: Sang-min Shin ,  Young-soo Park ,  June-mo Koo ,  Byoung-jae Bae ,  I-hun Song ,  Suk-pil Kim

Inventor： Sang-min Shin ,  Young-soo Park ,  June-mo Koo ,  Byoung-jae Bae ,  I-hun Song ,  Suk-pil Kim

IPC: H01L21/00 ,  H01L31/112 ,  H01L23/48

CPC classification number: H01L27/11502 ,  H01L27/11507

Abstract: A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.

Abstract translation: 提供具有三维结构的铁电电容器，具有其的非易失性存储器件及其制造方法。 铁电电容器可以包括沟槽型下电极，形成在下电极周围的至少一层，形成在下电极和至少一层上的铁电层（PZT层）和形成在铁电层上的上电极。 所述至少一个层可以是至少一个绝缘夹层，并且所述至少一个层也可以是至少一个扩散阻挡层。 所述至少一层可以由除了SiO2之外的绝缘材料形成，或者可以具有不包括Pb的钙钛矿晶体结构。

公开(公告)号：US20100148825A1

公开(公告)日：2010-06-17

申请号：US12591701

申请日：2009-11-30

Applicant: Jae-chul Park ,  I-hun Song ,  Young-soo Park ,  Kee-won Kwon ,  Chang-jung Kim ,  Kyoung-kook Kim ,  Sung-ho Park ,  Sung-hoon Lee ,  Sang-wook Kim ,  Sun-il Kim

Inventor： Jae-chul Park ,  I-hun Song ,  Young-soo Park ,  Kee-won Kwon ,  Chang-jung Kim ,  Kyoung-kook Kim ,  Sung-ho Park ,  Sung-hoon Lee ,  Sang-wook Kim ,  Sun-il Kim

IPC: H03K19/094 ,  H01L29/786 ,  H01L21/8234 ,  H01L21/336 ,  H01L27/088

CPC classification number: H01L29/7869 ,  H01L27/0207 ,  H01L27/11521 ,  H01L27/11807 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/41733 ,  H01L29/78648

Abstract: Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.

Abstract translation: 提供半导体器件和制造半导体器件的方法。 半导体器件可以是包括p型氧化物TFT和n型氧化物TFT的互补器件。 半导体器件可以是诸如逆变器，NAND器件或NOR器件的逻辑器件。

公开(公告)号：US20100140608A1

公开(公告)日：2010-06-10

申请号：US12458251

申请日：2009-07-07

Applicant: Sung-ho Park ,  Chang-jung Kim ,  I-hun Song ,  Sang-wook Kim ,  Jae-chul Park

Inventor： Sung-ho Park ,  Chang-jung Kim ,  I-hun Song ,  Sang-wook Kim ,  Jae-chul Park

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/785 ,  H01L21/8221 ,  H01L27/0688 ,  H01L29/66795 ,  H01L29/7869

Abstract: Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.

Abstract translation: 示例性实施例提供晶体管及其制造方法。 晶体管可以包括由氧化物半导体形成的沟道层和具有三维结构的栅极。 多个晶体管可以沿垂直于衬底的方向堆叠。 多个晶体管中的至少一些可以彼此连接。

公开(公告)号：US20080277663A1

公开(公告)日：2008-11-13

申请号：US11984072

申请日：2007-11-13

Applicant: Dong-hun Kang ,  I-hun Song ,  Elvira Fortunato ,  Rodrigo Martins

Inventor： Dong-hun Kang ,  I-hun Song ,  Elvira Fortunato ,  Rodrigo Martins

IPC: H01L29/10 ,  H01L21/84

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: Provided is a thin film transistor that includes a substrate on which an insulating layer is formed, a gate formed on a region of the insulating layer, a gate insulating layer formed on the insulating layer and the gate, a channel region formed on the gate insulating layer on a region corresponding to the location of the gate, a source and a drain respectively formed by contacting either side of the channel region; and a passivation layer formed of a compound made of a group II element and a halogen element on the channel region.

Abstract translation: 提供一种薄膜晶体管，其包括其上形成有绝缘层的基板，形成在绝缘层的区域上的栅极，形成在绝缘层上的栅极绝缘层和栅极，形成在栅极绝缘上的沟道区域 在对应于栅极的位置的区域上分别形成一个源极和漏极，该漏极和漏极分别通过与沟道区域的任一侧接触; 以及由沟道区域上由II族元素和卤素元素制成的化合物形成的钝化层。

公开(公告)号：US07274513B2

公开(公告)日：2007-09-25

申请号：US11358074

申请日：2006-02-22

Applicant: Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

Inventor： Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

IPC: G02B9/00

CPC classification number: G03F7/70233

Abstract: Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .