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16 条记录 (耗时 0.015 秒)

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL
    12.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL 有权
    制造包含通道的半导体器件的方法

    公开(公告)号：US20120231605A1

    公开(公告)日：2012-09-13

    申请号：US13312176

    申请日：2011-12-06

    申请人： Young-Pil KIM ,  Hyung-Ik Lee ,  Woo-Sung Jeon ,  Ki-Hong Kim ,  Jung-Yun Won ,  In-Sun Jung

    发明人： Young-Pil KIM ,  Hyung-Ik Lee ,  Woo-Sung Jeon ,  Ki-Hong Kim ,  Jung-Yun Won ,  In-Sun Jung

    IPC分类号： H01L21/762

    CPC分类号： H01L27/1052 ,  H01L21/76224 ,  H01L27/10876

    摘要： A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

    摘要翻译： 一种包括形成隔离沟槽的方法; 在隔离沟槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽，以露出第一衬垫，第二衬垫和绝缘材料，以及横跨有源区域的第二区域以暴露衬底的一部分，第一区域具有第一 侧壁具有平面形状，并且所述第二区域具有第二侧壁，所述第二侧壁具有凹形中心区域，使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。

    SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN LAYER AND FABRICATION METHOD
    14.
    发明申请
    SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN LAYER AND FABRICATION METHOD 审中-公开
    具有外延层的半导体器件和制造方法

    公开(公告)号：US20080105899A1

    公开(公告)日：2008-05-08

    申请号：US11858288

    申请日：2007-09-20

    申请人： Young-pil KIM ,  Jin-bum KIM ,  Jun-ho LEE ,  Jung-yun WON ,  In-sun JUNG

    发明人： Young-pil KIM ,  Jin-bum KIM ,  Jun-ho LEE ,  Jung-yun WON ,  In-sun JUNG

    IPC分类号： H01L29/778 ,  H01L21/336

    CPC分类号： H01L21/26513 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/78

    摘要： A fabrication method and a related semiconductor device are disclosed. The method includes; forming a gate structure on a semiconductor substrate, the gate structure comprising a stacked combination a gate dielectric pattern, a gate, a capping layer pattern and an epitaxial blocking layer pattern, forming sidewall spacers on the gate structure covering at least sidewall portions of the gate dielectric pattern, the gate, and the capping layer pattern, wherein the epitaxial blocking layer pattern is exposed on a top surface of the gate structure, forming an elevated epitaxial layer on the semiconductor substrate outside the gate structure using a selective epitaxial growth process, and forming elevated source/drain regions by applying an ion implantation process to the semiconductor substrate following formation of the elevated epitaxial layer, wherein the epitaxial blocking layer is a nitrogen enhanced layer relative to the capping layer pattern.

    摘要翻译： 公开了一种制造方法和相关的半导体器件。 该方法包括： 在半导体衬底上形成栅极结构，所述栅极结构包括层叠组合栅极电介质图案，栅极，覆盖层图案和外延阻挡层图案，在所述栅极结构上形成至少覆盖所述栅极的侧壁部分的侧壁间隔物 电介质图案，栅极和覆盖层图案，其中外延阻挡层图案暴露在栅极结构的顶表面上，使用选择性外延生长工艺在栅极结构外部的半导体衬底上形成升高的外延层，以及 通过在形成升高的外延层之后对半导体衬底施加离子注入工艺来形成升高的源/漏区，其中外延阻挡层相对于覆盖层图案是氮增强层。

    Uses of cucurbituril devices
    15.
    发明授权
    Uses of cucurbituril devices 有权
    使用葫芦素装置

    公开(公告)号：US07160466B2

    公开(公告)日：2007-01-09

    申请号：US10646722

    申请日：2003-08-25

    申请人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

    发明人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

    IPC分类号： C02F1/58 ,  C02F1/62

    CPC分类号： C07D245/04 ,  B01D53/34 ,  B01D53/50 ,  B01D53/56 ,  B01D53/62 ,  B01J31/0237 ,  B01J31/0247 ,  B01J31/0249 ,  B01J31/0251 ,  C02F1/58 ,  C07D487/22 ,  Y02C10/08

    摘要： Uses of cucurbituril derivatives are disclosed. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20 , wherein the cucurbituril derivatives having the formula (1), where n=6 , R1=H, R2=H and X=O, and n=5 , R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.

    摘要翻译： 披露了葫芦素衍生物的用途。 葫芦巴衍生物具有式（1）其中X是O，S或NH; R 1和R 2独立地选自氢，碳原子数1〜30的烷基，碳原子数1〜30的烯基，炔基， 1至30个碳原子，1至30个碳原子的烷硫基，1至30个碳原子的烷基羧基，1至30个碳原子的羟基烷基，1至30个碳原子的烷基甲硅烷基，1至30个碳原子的烷氧基 1〜30个碳原子的卤代烷基，硝基，1〜30个碳原子的烷基胺基，1〜30个碳原子的氨基烷基，5〜30个碳原子的未取代环烷基，4-30个碳原子的环烷基 具有杂原子的碳原子，6至30个碳原子的未取代芳基和6至30个碳原子的芳基与杂原子; 并且n为4至20的整数，其中具有式（1）的葫芦脲衍生物，其中n = 6，R 1 = H，R 2 H = H和 X = O，n = 5，R 1 = CH 3，R 2 = H，X = O。 通过三种新方法之一容易地制备葫芦巴脲衍生物作为混合物，并且可以通过分级结晶从混合物中分离出每种葫芦巴脲衍生物。 具有式（1）的葫芦巴衍生物或其混合物非常适用于去除溶于水或废水中的染料和重金属离子。