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    Method of planarizing an inter-metal insulation film
    13.
    发明授权
    Method of planarizing an inter-metal insulation film 有权
    平面化金属间绝缘膜的方法

    公开(公告)号：US07498263B2

    公开(公告)日：2009-03-03

    申请号：US11298678

    申请日：2005-12-12

    Applicant: Se-rah Yun ,  Chang-ki Hong ,  Jae-dong Lee

    Inventor： Se-rah Yun ,  Chang-ki Hong ,  Jae-dong Lee

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/31058 ,  H01L21/31053 ,  H01L21/76819

    Abstract: A method for forming a planarized inter-metal insulation film is provided. The method includes applying a CMP process to an insulation film as controlled by a polish-stop layer pattern formed on an underlying metal wiring pattern. A PAE based material may be used to form the polish-stop layer.

    Abstract translation: 提供一种形成平坦化的金属间绝缘膜的方法。 该方法包括将CMP工艺施加到由形成在下面的金属布线图案上的抛光 - 停止层图案控制的绝缘膜上。 可以使用基于PAE的材料来形成抛光 - 停止层。

    Semiconductor device including a planarized surface and method thereof
    14.
    发明申请
    Semiconductor device including a planarized surface and method thereof 审中-公开

    公开(公告)号：US20080277767A1

    公开(公告)日：2008-11-13

    申请号：US12219201

    申请日：2008-07-17

    Applicant: Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

    Inventor： Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

    IPC: H01L21/306 ,  H01L23/58 ,  H01L21/76

    CPC classification number: H01L21/76224

    Abstract: A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The substrate is etched to form a trench region, and a medium material layer and an oxide layer are subsequently formed on the substrate, filling the trench region. Chemical mechanical polishing (CMP) is performed on the oxide layer until the medium material layer is exposed. CMP is then performed until the patterned etch stop layer is exposed and a planarized oxide layer is formed. Because the medium material layer has a higher removal rate during CMP than the oxide layer, occurrences of the dishing phenomenon are reduced. A slurry including an anionic surfactant is used to increase the CMP removal ratio of the medium material layer to the oxide layer.

    Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry
    15.
    发明授权
    Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry 有权
    使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成金属配线的方法

    公开(公告)号：US07442646B2

    公开(公告)日：2008-10-28

    申请号：US11077150

    申请日：2005-03-11

    Applicant: Sung-Jun Kim ,  Jeong-Heon Park ,  Chang-Ki Hong ,  Jae-Dong Lee

    Inventor： Sung-Jun Kim ,  Jeong-Heon Park ,  Chang-Ki Hong ,  Jae-Dong Lee

    IPC: H01L21/302

    CPC classification number: C09G1/02 ,  H01L21/3212

    Abstract: A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method of forming metal wiring may employ one or two slurries with at least one of the slurries including at least one defect inhibitor.

    Abstract translation: 使用浆料的浆料，化学机械抛光（CMP）方法以及使用该浆料形成金属配线的方法。 浆料可以包括抛光剂，氧化剂和至少一种保护金属膜的缺陷抑制剂。 形成金属布线的CMP方法和方法可以使用一种或两种浆料，其中至少一种浆料包括至少一种缺陷抑制剂。

    Semiconductor device including a planarized surface and method thereof
    16.
    发明授权
    Semiconductor device including a planarized surface and method thereof 失效
    包括平面化表面的半导体器件及其方法

    公开(公告)号：US07413959B2

    公开(公告)日：2008-08-19

    申请号：US10419076

    申请日：2003-04-21

    Applicant: Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

    Inventor： Jae-Dong Lee ,  Yong-Pil Han ,  Chang-Ki Hong

    IPC: H01L21/00

    CPC classification number: H01L21/76224

    Abstract: A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The substrate is etched to form a trench region, and a medium material layer and an oxide layer are subsequently formed on the substrate, filling the trench region. Chemical mechanical polishing (CMP) is performed on the oxide layer until the medium material layer is exposed. CMP is then performed until the patterned etch stop layer is exposed and a planarized oxide layer is formed. Because the medium material layer has a higher removal rate during CMP than the oxide layer, occurrences of the dishing phenomenon are reduced. A slurry including an anionic surfactant is used to increase the CMP removal ratio of the medium material layer to the oxide layer.

    Abstract translation: 平面化半导体衬底的表面以减少凹陷现象的发生的方法。 限定沟槽区域的图案化蚀刻停止层形成在衬底上。 蚀刻衬底以形成沟槽区域，随后在衬底上形成介质材料层和氧化物层，填充沟槽区域。 在氧化物层上进行化学机械抛光（CMP），直到介质材料层露出。 然后执行CMP直到图案化的蚀刻停止层被暴露并且形成平坦化的氧化物层。 由于介质材料层在CMP期间具有比氧化物层更高的去除率，所以凹陷现象的发生减少。 使用包含阴离子表面活性剂的浆料来提高介质材料层与氧化物层的CMP去除率。

    Slurry delivery system, chemical mechanical polishing apparatus and method for using the same
    17.
    发明授权
    Slurry delivery system, chemical mechanical polishing apparatus and method for using the same 有权
    浆料输送系统，化学机械抛光装置及其使用方法

    公开(公告)号：US07338352B2

    公开(公告)日：2008-03-04

    申请号：US11434215

    申请日：2006-05-16

    Applicant: Choong-Kee Seong ,  Chang-Ki Hong ,  Jae-Dong Lee

    Inventor： Choong-Kee Seong ,  Chang-Ki Hong ,  Jae-Dong Lee

    IPC: B24B1/00

    CPC classification number: B01F5/0256 ,  B01F3/12 ,  B01F5/0413 ,  B01F5/0646 ,  B01F5/0654 ,  B01F5/0682 ,  B01F5/0688

    Abstract: A slurry delivery system, a chemical mechanical polishing (CMP) apparatus, and method for using the same are provided. An apparatus for supplying slurry to a polishing unit may include a first feed line through which an abrasive may be supplied at a first velocity. A velocity-changing member may be connected to the first feed line, and/or a velocity of the abrasive may be changed from the first velocity to. the second velocity different from the first velocity by the velocity-changing member. A second feed line may be connected to the velocity-changing member and/or an additive may be supplied through the second feed line. A supply line may be connected to the velocity-changing member. A slurry, which may be a mixture of the abrasive and/or the additive, may be supplied to a polishing unit through the supply line. Accordingly, the slurry may be more uniformly mixed and/or supplied to a polishing unit.

    Abstract translation: 提供浆料输送系统，化学机械抛光（CMP）装置及其使用方法。 用于将浆料供应到抛光单元的装置可以包括第一进料管线，研磨剂可以通过第一进料管线以第一速度被供给。 速度改变构件可以连接到第一进料管线，和/或磨料的速度可以从第一速度改变到。 第二速度与速度变化构件的第一速度不同。 第二进料管线可以连接到速度变化部件和/或可以通过第二进料管线供应添加剂。 供应管线可以连接到速度变化构件。 可以将研磨剂和/或添加剂的混合物的浆料通过供应管线供应到抛光单元。 因此，浆料可以被更均匀地混合和/或提供给抛光单元。

    Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same
    20.
    发明授权
    Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same 有权
    晶圆抛光浆和化学机械抛光（CMP）方法使用相同

    公开(公告)号：US06514862B2

    公开(公告)日：2003-02-04

    申请号：US09977239

    申请日：2001-10-16

    Applicant: Jae-dong Lee ,  Jong-won Lee ,  Bo-un Yoon ,  Sang-rok Hah

    Inventor： Jae-dong Lee ,  Jong-won Lee ,  Bo-un Yoon ,  Sang-rok Hah

    IPC: H01L21302

    CPC classification number: C09G1/02 ,  H01L21/31053

    Abstract: A chemical mechanical polishing slurry includes an additive of a quaternary ammonium compound having a form of {N—(R1R2R3R4)}+X−, in which R1, R2, R3, and R4 are radicals, and X− is an anion derivative including halogen elements. Preferably, the quaternary ammonium compound is one of [(CH3)3NCH2CH2OH]Cl, [(CH3)3NCH2CH2OH]l, [(CH3)3NCH2CH2OH]Br, [(CH3)3NCH2CH2OH]CO3, and mixtures thereof. The slurry may further include a pH control agent formed of a base such as KOH, NH4OH, and (CH3)4NOH, and an acid such as HCl, H2SO4, H3PO4, and HNO3. Also, the pH control agent can include [(CH3)3NCH2CH2OH]OH. The slurry may further include a surfactant such as cetyldimethyl ammonium bromide, cetyldimethyl ammonium bromide, polyethylene oxide, polyethylene alcohol or polyethylene glycol.

    Abstract translation: 化学机械抛光浆料包括具有{N-（R1R2R3R4）} + X-形式的季铵化合物的添加剂，其中R 1，R 2，R 3和R 4是自由基，X是包含卤素的阴离子衍生物 元素。 优选地，季铵化合物是[（CH 3）3 NHCH 2 CH 2 OH] Cl，[（CH 3）3 NHCH 2 CH 2 OH] 1，[（CH 3）3 NHCH 2 CH 2 OH] Br，[（CH 3）3 NHCH 2 CH 2 OH] CO 3及其混合物之一。 该浆料还可以包括由碱如KOH，NH 4 OH和（CH 3）4 NOH形成的pH控制剂，以及酸如HCl，H 2 SO 4，H 3 PO 4和HNO 3。 此外，pH控制剂可以包括[（CH 3）3 NHCH 2 OH] OH。 浆料还可以包括表面活性剂如十六烷基二甲基溴化铵，鲸蜡基二甲基溴化铵，聚环氧乙烷，聚乙烯醇或聚乙二醇。

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