公开(公告)号：US20100133590A1

公开(公告)日：2010-06-03

申请号：US12626343

申请日：2009-11-25

Applicant: Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

Inventor： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/14

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Abstract translation: 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

公开(公告)号：US09170333B2

公开(公告)日：2015-10-27

申请号：US13334111

申请日：2011-12-22

Applicant: Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Bongki Mheen ,  Ki-Jun Sung ,  Jae-Sik Sim ,  Kisoo Kim ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H04N13/02 ,  G01S17/89 ,  G01S7/481 ,  G01S7/486 ,  G01S7/487 ,  G01S7/491 ,  H04N13/00

CPC classification number: G01S17/89 ,  G01S7/4813 ,  G01S7/4816 ,  G01S7/4863 ,  G01S7/4868 ,  G01S7/487 ,  G01S7/4912 ,  H04N13/106 ,  H04N13/211 ,  H04N13/254 ,  H04N13/296

Abstract: Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.

Abstract translation: 公开了一种动态范围三维图像的系统，包括：光检测器，其包括能够控制光放大增益的增益控制端; 像素检测模块，用于通过接收光学检测器的输出来检测用于配置图像的像素信号; 高动态范围（HDR）生成模块，用于通过产生指示像素信号的饱和度的信号来获取动态范围图像，并且基于由像素检测模块检测的像素信号组合像素信号; 以及增益控制信号生成模块，其基于表示像素信号的饱和度的信号的大小，生成用于向光检测器的增益控制端子提供所需电压的输出信号。

公开(公告)号：US08592247B2

公开(公告)日：2013-11-26

申请号：US13273257

申请日：2011-10-14

Applicant: Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

Inventor： Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC: H01L21/00

CPC classification number: H01L31/107 ,  H01L31/184 ,  Y02E10/544

Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Abstract translation: 一种方法包括：依次在衬底表面上生长光吸收层，分级层，电场缓冲层和放大层，形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分，在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层，并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。

公开(公告)号：US08030188B2

公开(公告)日：2011-10-04

申请号：US12508382

申请日：2009-07-23

Applicant: Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

Inventor： Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/2258

Abstract: Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.

Abstract translation: 提供一种形成化合物半导体器件的方法。 在该方法中，在未掺杂的化合物半导体层上形成掺杂剂元素层。 执行退火处理以将掺杂剂元素层中的掺杂剂扩散到未掺杂的化合物半导体层中，从而形成掺杂剂扩散区域。 相对于具有掺杂剂扩散区域的基板，使用液氮进行快速冷却处理。

公开(公告)号：US20080137178A1

公开(公告)日：2008-06-12

申请号：US11949934

申请日：2007-12-04

Applicant: Yong Duck CHUNG ,  Kwang Seong CHOI ,  Jae Sik SIM ,  Je Ha KIM

Inventor： Yong Duck CHUNG ,  Kwang Seong CHOI ,  Jae Sik SIM ,  Je Ha KIM

IPC: G02F1/00

CPC classification number: G02F1/025 ,  G02F2203/02 ,  H01S5/0265

Abstract: Provided is a reflection-type optical modulation module. According to the reflection-type optical modulation module, an anti-reflective thin film is formed on the optical input/output side surface of a waveguide to reduce optical coupling loss, and also a high-reflective thin film is formed on the opposite side surface to feed back a modulated optical signal. Thus, even when the length of an absorption layer is shortened, a sufficient optical path length is available, and it is possible to obtain a sufficient extinction ratio. Since the optical path length is sufficiently long despite a reduction in the length of the device, capacitance is reduced, and high-speed operation is enabled. In addition, only one lensed optical fiber for optical input and output is used, and thus it is possible to reduce production cost and the number of installation processes. Furthermore, a small-sized and low-priced optical amplifier, instead of an external amplifier which is high priced and has a large volume, is integrated with an optical modulator so that production cost can be further reduced.

Abstract translation: 提供了一种反射型光调制模块。 根据反射型光调制模块，在波导的光输入/输出侧表面上形成抗反射薄膜以减少光耦合损耗，并且在相对侧表面上形成高反射薄膜 以反馈调制的光信号。 因此，即使缩短吸收层的长度，也可以获得足够的光路长度，可以获得足够的消光比。 由于尽管器件的长度减小，光路长度足够长，但是电容减小，并且能够进行高速操作。 此外，仅使用一个用于光输入和输出的透镜光纤，因此可以降低生产成本和安装过程的数量。 此外，小尺寸和低价格的光放大器代替高价格并且具有大体积的外部放大器与光调制器集成，从而可以进一步降低生产成本。

公开(公告)号：US08710547B2

公开(公告)日：2014-04-29

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L29/72

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US20130153962A1

公开(公告)日：2013-06-20

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US20120156826A1

公开(公告)日：2012-06-21

申请号：US13273257

申请日：2011-10-14

Applicant: Jae Sik SIM ,  Ki Soo KIM ,  Bong Ki MHEEN ,  Myoung Sook OH ,  Yong Hwan KWON ,  Eun Soo NAM

Inventor： Jae Sik SIM ,  Ki Soo KIM ,  Bong Ki MHEEN ,  Myoung Sook OH ,  Yong Hwan KWON ,  Eun Soo NAM

IPC: H01L31/18

CPC classification number: H01L31/107 ,  H01L31/184 ,  Y02E10/544

Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Abstract translation: 一种方法包括：依次在衬底表面上生长光吸收层，分级层，电场缓冲层和放大层，形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分，在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层，并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。

公开(公告)号：US20080285978A1

公开(公告)日：2008-11-20

申请号：US12053694

申请日：2008-03-24

Applicant: Kwang Seong Choi ,  Yong Duck Chung ,  Jae Sik Sim ,  Jong Tae Moon ,  Hyun Kyu Yu ,  Je Ha Kim

Inventor： Kwang Seong Choi ,  Yong Duck Chung ,  Jae Sik Sim ,  Jong Tae Moon ,  Hyun Kyu Yu ,  Je Ha Kim

IPC: H04B10/00

CPC classification number: H04B10/25752 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Provided is an optical hybrid module in which an optical device, a filter, an amplifier and an antenna are hybrid-integrated, which includes: a silicon optical bench disposed on a substrate and having an optical fiber and an optical device; an amplifier disposed on the substrate and connected to the optical device disposed on the silicon optical bench to amplify a signal transmitted from the optical device; and an antenna disposed on the substrate to be connected to the amplifier and transmitting a signal amplified by the amplifier. Thus, a foot-print module may be embodied by disposing an antenna and a filter on a single- or multi-layer substrate and providing a bias required for the optical device and the amplifier through a solder ball. Also, due to the antenna and filter disposed on the substrate, an expensive connector is not needed, and thus a production costs can be reduced.

Abstract translation: 提供了一种光混合模块，其中光学装置，滤波器，放大器和天线是混合集成的，其包括：设置在基板上并具有光纤和光学装置的硅光学台; 放大器，设置在所述基板上并连接到设置在所述硅光学台上的所述光学装置，以放大从所述光学装置发送的信号; 以及设置在所述基板上以连接到所述放大器并且发射由所述放大器放大的信号的天线。 因此，可以通过在单层或多层衬底上设置天线和滤波器并通过焊球提供光学器件和放大器所需的偏置来实现脚印模块。 此外，由于设置在基板上的天线和滤波器，不需要昂贵的连接器，因此可以降低生产成本。

公开(公告)号：US07310469B2

公开(公告)日：2007-12-18

申请号：US11481580

申请日：2006-07-06

Applicant: Sahng Gi Park ,  Eun Deok Sim ,  Jeong Woo Park ,  Jae Sik Sim ,  Yong Soon Baek

Inventor： Sahng Gi Park ,  Eun Deok Sim ,  Jeong Woo Park ,  Jae Sik Sim ,  Yong Soon Baek

IPC: G02B6/10 ,  G02B6/26 ,  H04B10/06

CPC classification number: G02B6/12004 ,  H01L31/0304 ,  H01L31/105

Abstract: A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.

Abstract translation: 提供了一种波导PIN光电二极管。 波导PIN光电二极管包括下导光层，光吸收层，上导光层和包覆层。 下部光导件形成在基板上，并且光吸收层形成在下部光导层上。 上光导层形成在光吸收层上，包层形成在上光导层上。 下导光层，光吸收层和上导光层构成作为光波导的芯层，并且在深度方向上对称地形成渐变折射率分布，以具有最高折射率的光吸收层为中心 指数。