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27 条记录 (耗时 0.014 秒)

    Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
    11.
    发明申请
    Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same 有权
    磁存储器采用自旋极化电流写入，采用非晶铁磁性合金，书写方法相同

    公开(公告)号：US20050040433A1

    公开(公告)日：2005-02-24

    申请号：US10490491

    申请日：2002-09-19

    申请人： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

    发明人： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

    IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L31/072

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226

    摘要： The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.

    摘要翻译： 本发明涉及一种磁存储器，其中每个存储点由磁性隧道结（60）组成，包括：被称为俘获层（61）的磁性层，其中磁化是刚性的; 称为自由层（63）的磁性层，其磁化可以是反向的; 和绝缘层（62），介于所述自由层（73）和所述被俘获层（71）之间并分别与所述两层接触。 自由层（63）由基于稀土或过渡金属的无定形或纳米碳化合金制成，所述合金的磁顺序为铁磁型，所述自由层具有基本上平面的磁化强度。

    Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same
    14.
    发明授权
    Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same 有权
    具有以热辅助方式写入的磁性隧道结的磁存储器及其写入方法

    公开(公告)号：US07411817B2

    公开(公告)日：2008-08-12

    申请号：US11483425

    申请日：2006-07-07

    申请人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

    发明人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/1675 ,  G11C11/5607

    摘要： A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel junction includes at least a trapped layer with a fixed magnetisation direction, a free layer with a variable magnetisation direction with an insulating layer arranged there between. The free layer is formed from at least one soft magnetic layer and a trapped layer, with the two layers being magnetically coupled by contact. During read operations and at rest, the operating temperature of the memory is lower than the blocking temperature of the free and trapped layers, respectively.

    摘要翻译： 一种用于写入以热辅助方式写入的磁存储器的系统和方法，每个存储点由磁性隧道结形成，并且具有平行于形成隧道的层的平面的存储器的基本圆形的横截面 交界处 隧道结至少包括具有固定磁化方向的捕获层，具有可变磁化方向的自由层，其间布置有绝缘层。 自由层由至少一个软磁层和捕获层形成，其中两层通过接触磁耦合。 在读取操作和静止期间，存储器的工作温度分别低于游离和俘获层的阻挡温度。

    Dual shield vertical magneto-optical read head
    15.
    发明授权
    Dual shield vertical magneto-optical read head 失效
    双屏垂直磁光读头

    公开(公告)号：US06771567B2

    公开(公告)日：2004-08-03

    申请号：US09992588

    申请日：2001-11-06

    申请人： Jean-Pierre Nozieres ,  Sebastien Ferrand ,  Yannick Maral ,  Jean-Christophe Toussaint ,  Jørn Raastad

    发明人： Jean-Pierre Nozieres ,  Sebastien Ferrand ,  Yannick Maral ,  Jean-Christophe Toussaint ,  Jørn Raastad

    IPC分类号： G11B1100

    CPC分类号： G11B11/10547

    摘要： A magneto-optical read head for detecting magnetic transitions representing data stored in a magnetic recording medium as a sense layer having an optical property that is magnetic field-dependent, two magnetic shield layers respectively disposed on opposite sides of the sense layer and allowing magnetic flux from substantially only one of the magnetic transitions to interact with the sense layer at a time, with one of the magnetic shield layers being transparent at a wavelength allowing light at that wavelength to enter into and exit from the sense layer.

    摘要翻译： 一种磁光读头，用于检测表示存储在磁记录介质中的数据的磁转换，作为具有磁场依赖性的光学特性的感测层，分别设置在感测层的相对侧上的两个磁屏蔽层，并允许磁通量 从基本上只有一个磁性跃迁到一次与感应层相互作用，其中一个磁屏蔽层在允许该波长的光进入和离开感测层的波长处是透明的。

    Magnetic tunnel junction magnetic memory
    16.
    发明授权
    Magnetic tunnel junction magnetic memory 有权
    磁隧道结磁记忆体

    公开(公告)号：US07957181B2

    公开(公告)日：2011-06-07

    申请号：US12059869

    申请日：2008-03-31

    申请人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    发明人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

    摘要： This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

    摘要翻译： 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

    System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells
    18.
    发明申请
    System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells 有权

    公开(公告)号：US20090109719A1

    公开(公告)日：2009-04-30

    申请号：US12348830

    申请日：2009-01-05

    申请人： Jean-Pierre Nozieres ,  Virgile Javerliac

    发明人： Jean-Pierre Nozieres ,  Virgile Javerliac

    IPC分类号： G11C15/02

    CPC分类号： G11C15/046 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/02

    摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.

    Magnetic memory with write inhibit selection and the writing method for same
    20.
    发明授权
    Magnetic memory with write inhibit selection and the writing method for same 有权
    具有写禁止选择的磁存储器及其写入方法

    公开(公告)号：US07129555B2

    公开(公告)日：2006-10-31

    申请号：US10490490

    申请日：2002-09-19

    申请人： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

    发明人： Jean-Pierre Nozieres ,  Laurent Ranno ,  Yann Conraux

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3268

    摘要： The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

    摘要翻译： 本发明涉及具有写禁止选择的磁存储器及其写入方法。 本发明的每个存储元件都包括一个磁性隧道结（70），它由以下组成：被称为被俘获层（71）的磁性层，具有硬磁化; 被称为自由层（73）的磁性层，其磁化可以颠倒; 以及设置在所述自由层（73）和所述被捕获层（71）之间并且与所述两个层接触的绝缘层（72）。 自由层（73）由基于稀土和过渡金属的无定形或纳米晶体合金制成，所述合金的磁顺序为亚铁磁型。 本发明存储器的选定工作温度接近合金的补偿温度。