公开(公告)号：US20130149806A1

公开(公告)日：2013-06-13

申请号：US13612736

申请日：2012-09-12

Applicant: Sang Hoon KIM ,  Gyungock KIM ,  In Gyoo KIM ,  JiHo JOO ,  Ki Seok JANG

Inventor： Sang Hoon KIM ,  Gyungock KIM ,  In Gyoo KIM ,  JiHo JOO ,  Ki Seok JANG

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  G02B6/12004 ,  G02B6/131 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/109 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

公开(公告)号：US08948224B2

公开(公告)日：2015-02-03

申请号：US13545889

申请日：2012-07-10

Applicant: In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L21/00

CPC classification number: H01S5/021 ,  H01S3/0637 ,  H01S5/0205 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/2272 ,  H01S5/3027

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract translation: 本发明构思提供了半导体激光器件及其制造方法。 根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。 因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。

公开(公告)号：US20130156057A1

公开(公告)日：2013-06-20

申请号：US13545889

申请日：2012-07-10

Applicant: In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM ,  JiHo JOO ,  Ki Seok JANG

Inventor： In Gyoo KIM ,  Gyungock KIM ,  Sang Hoon KIM ,  JiHo JOO ,  Ki Seok JANG

IPC: H01S5/028 ,  H01L33/58

CPC classification number: H01S5/021 ,  H01S3/0637 ,  H01S5/0205 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/2272 ,  H01S5/3027

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract translation: 本发明构思提供了半导体激光器件及其制造方法。 根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。 因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。

公开(公告)号：US20110133187A1

公开(公告)日：2011-06-09

申请号：US12765705

申请日：2010-04-22

Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0232

CPC classification number: G02B6/12004 ,  G02B2006/12176 ,  G02B2006/12188 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.

Abstract translation: 提供了一种光电检测器的制造方法。 该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波​​导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

公开(公告)号：US20110049660A1

公开(公告)日：2011-03-03

申请号：US12763990

申请日：2010-04-20

Applicant: Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/0232

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。