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    BASE PLATE FOR USE IN A MULTI-CHIP MODULE
    11.
    发明申请
    BASE PLATE FOR USE IN A MULTI-CHIP MODULE 有权
    基板在多芯片模块中使用

    公开(公告)号：US20110149539A1

    公开(公告)日：2011-06-23

    申请号：US12646660

    申请日：2009-12-23

    Applicant: Jing Shi ,  Nyles Nettleton ,  Bruce M. Guenin

    Inventor： Jing Shi ,  Nyles Nettleton ,  Bruce M. Guenin

    IPC: H05K1/18 ,  H05K7/00 ,  H05K3/30 ,  H05K3/42

    CPC classification number: H05K1/181 ,  H01L23/13 ,  H01L25/0652 ,  H01L25/0655 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06531 ,  H01L2924/00014 ,  H05K1/0239 ,  H05K3/3436 ,  H05K2201/09036 ,  H05K2201/10674 ,  Y02P70/611 ,  Y10T29/4913 ,  Y10T29/49165 ,  H01L2224/05599

    Abstract: A base mechanism for use in a multi-chip module (MCM) is described. This base mechanism includes a substrate having top and bottom surfaces. The bottom surface includes first electrical connectors that convey power, and through-substrate vias (TSVs) between the top and bottom surfaces are electrically coupled to these electrical connectors. Furthermore, a bridge chip is rigidly mechanically coupled to the top surface. This bridge chip includes proximity communication connectors that communicate information via proximity communication with one or more island chips in the MCM. Additionally, spacers are rigidly mechanically coupled to the top surface of the substrate. In conjunction with the bridge chip, the spacers define cavities on the top surface, which include second electrical connectors. These second electrical connectors are electrically coupled to the TSVs, and communicate additional information with and convey power to the one or more island chips.

    Abstract translation: 描述了用于多芯片模块（MCM）的基本机构。 该基座机构包括具有顶表面和底表面的基底。 底表面包括输送功率的第一电连接器，并且顶表面和底表面之间的贯穿基板通孔（TSV）电耦合到这些电连接器。 此外，桥接芯片刚性机械耦合到顶表面。 该桥式芯片包括通过与MCM中的一个或多个岛式芯片的接近通信来传送信息的邻近通信连接器。 此外，间隔件刚性机械耦合到衬底的顶表面。 与桥芯片一起，间隔件限定顶表面上的空腔，其包括第二电连接器。 这些第二电连接器电耦合到TSV，并且与一个或多个岛式芯片通信附加信息并传递功率。

    Capactive connectors with enhanced capacitive coupling
    12.
    发明授权
    Capactive connectors with enhanced capacitive coupling 有权
    具有增强电容耦合的电容式连接器

    公开(公告)号：US07863743B1

    公开(公告)日：2011-01-04

    申请号：US12494981

    申请日：2009-06-30

    Applicant: Jing Shi ,  Darko R. Popovic ,  Ashok V. Krishnamoorthy

    Inventor： Jing Shi ,  Darko R. Popovic ,  Ashok V. Krishnamoorthy

    IPC: H01L23/48

    CPC classification number: H01L25/0657 ,  H01L23/642 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A single-chip module (SCM) and a multi-chip module (MCM) that includes at least two instances of the SCM are described. The SCM includes a pad disposed on a substrate. This pad has a top surface that includes a pattern of features. A given feature in the pattern of features has a height that extends above a minimum thickness of the pad, thereby increasing a capacitance associated with the pad relative to a configuration in which the top surface is planar. Furthermore, pads disposed on the two instances of the SCM in the MCM may each have a corresponding pattern of features that increases the capacitive coupling between the pads relative to a configuration in which the top surfaces of either or both of the pads are planar. Note that the pads may be aligned such that features in the patterns of features on these pads are interdigited with each other.

    Abstract translation: 描述了包括SCM的至少两个实例的单芯片模块（SCM）和多芯片模块（MCM）。 SCM包括设置在基板上的焊盘。 该垫具有包括特征图案的顶面。 特征图案中的给定特征具有高于垫的最小厚度的高度，从而增加与衬垫相关联的电容相对于顶表面为平面的构造。 此外，设置在MCM中的SCM的两个实例上的焊盘可以各自具有对应的特征图案，其相对于其中一个或两个焊盘的顶表面是平面的配置增加了焊盘之间的电容耦合。 注意，焊盘可以对准，使得这些焊盘上的特征图案中的特征彼此交叉。

    CAPACTIVE CONNECTORS WITH ENHANCED CAPACITIVE COUPLING
    13.
    发明申请
    CAPACTIVE CONNECTORS WITH ENHANCED CAPACITIVE COUPLING 有权
    具有增强电容耦合的电容连接器

    公开(公告)号：US20100327460A1

    公开(公告)日：2010-12-30

    申请号：US12494981

    申请日：2009-06-30

    Applicant: Jing Shi ,  Darko R. Popovic ,  Ashok V. Krishnamoorthy

    Inventor： Jing Shi ,  Darko R. Popovic ,  Ashok V. Krishnamoorthy

    IPC: H01L25/065 ,  H01L23/495

    CPC classification number: H01L25/0657 ,  H01L23/642 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A single-chip module (SCM) and a multi-chip module (MCM) that includes at least two instances of the SCM are described. The SCM includes a pad disposed on a substrate. This pad has a top surface that includes a pattern of features. A given feature in the pattern of features has a height that extends above a minimum thickness of the pad, thereby increasing a capacitance associated with the pad relative to a configuration in which the top surface is planar. Furthermore, pads disposed on the two instances of the SCM in the MCM may each have a corresponding pattern of features that increases the capacitive coupling between the pads relative to a configuration in which the top surfaces of either or both of the pads are planar. Note that the pads may be aligned such that features in the patterns of features on these pads are interdigited with each other.

    Abstract translation: 描述了包括SCM的至少两个实例的单芯片模块（SCM）和多芯片模块（MCM）。 SCM包括设置在基板上的焊盘。 该垫具有包括特征图案的顶面。 特征图案中的给定特征具有高于垫的最小厚度的高度，从而增加与衬垫相关联的电容相对于顶表面为平面的构造。 此外，设置在MCM中的SCM的两个实例上的焊盘可以各自具有对应的特征图案，其相对于其中一个或两个焊盘的顶表面是平面的配置增加了焊盘之间的电容耦合。 注意，焊盘可以对准，使得这些焊盘上的特征图案中的特征彼此交叉。

    Fenugreek seed bio-active compositions and methods for extracting same
    14.
    发明授权
    Fenugreek seed bio-active compositions and methods for extracting same 有权
    葫芦巴种子生物活性成分及其提取方法

    公开(公告)号：US07338675B2

    公开(公告)日：2008-03-04

    申请号：US10434444

    申请日：2003-05-07

    Applicant: Steve S. Lee ,  Richard B. Hynson ,  Ke-Qin Zhang ,  Wu-Zhou Li ,  Jing Shi Zhou

    Inventor： Steve S. Lee ,  Richard B. Hynson ,  Ke-Qin Zhang ,  Wu-Zhou Li ,  Jing Shi Zhou

    IPC: A01N65/00 ,  A01N37/30 ,  A01N37/12

    CPC classification number: A61K36/48

    Abstract: A composition of bio-active compounds and methods for facilitating and supporting the metabolism and transport of glucose and carbohydrates into muscle cells. Preferably, the composition of bio-active compounds include 4-hydroxyisoleucine and one or more amino acids selected from the group consisting of arginine, aspartate, threonine, serine, glutamate, proline, glycine, alanine, cysteine, valine, methionine, isoleucine, leucine, tryptophan, phenylalanine, ornithine, lysine, histidine and gamma-amino butyrate. In one presently preferred embodiment of the present invention, the bio-active compounds are extracted from fenugreek seeds. A method for extracting a composition of bio-active compounds from fenugreek seeds is also disclosed, wherein the method comprises the steps of: (1) providing a plurality of fenugreek seeds; (2) preparing the fenugreek seeds; and (3) extracting a composition of bio-active compounds from the fenugreek seeds, wherein the bio-active compounds comprise 4-hydroxyisoleucine and one or more amino acids selected from the group consisting of arginine, aspartate, threonine, serine, glutamate, proline, glycine, alanine, cysteine, valine, methionine, isoleucine, leucine, tryptophan, phenylalanine, ornithine, lysine, histidine and gamma-amino butyrate. The composition of bio-active compounds and methods for extraction of same preferably include between about 10% and 70% of 4-hydroxyisoleucine and between about 20% and 40% of the amino acids.

    Abstract translation: 生物活性化合物的组合物和促进和支持葡萄糖和碳水化合物进入肌肉细胞的代谢和转运的方法。 优选地，生物活性化合物的组合物包括4-羟基异亮氨酸和一种或多种选自精氨酸，天冬氨酸，苏氨酸，丝氨酸，谷氨酸，脯氨酸，甘氨酸，丙氨酸，半胱氨酸，缬氨酸，甲硫氨酸，异亮氨酸，亮氨酸 ，色氨酸，苯丙氨酸，鸟氨酸，赖氨酸，组氨酸和γ-氨基丁酸酯。 在本发明的一个目前优选的实施方案中，从葫芦巴种子中提取生物活性化合物。 还公开了从葫芦巴种子提取生物活性化合物的组合物的方法，其中所述方法包括以下步骤：（1）提供多种葫芦巴种子; （2）准备葫芦巴种子; （3）从葫芦巴种子提取生物活性化合物的组合物，其中所述生物活性化合物包含4-羟基异亮氨酸和一种或多种选自精氨酸，天冬氨酸，苏氨酸，丝氨酸，谷氨酸，脯氨酸 ，甘氨酸，丙氨酸，半胱氨酸，缬氨酸，甲硫氨酸，异亮氨酸，亮氨酸，色氨酸，苯丙氨酸，鸟氨酸，赖氨酸，组氨酸和γ-氨基丁酸。 生物活性化合物的组成和其提取方法优选包括约10％至70％的4-羟基异亮氨酸和约20％至40％的氨基酸。

    MRAM having semiconductor device integrated therein
    15.
    发明授权
    MRAM having semiconductor device integrated therein 有权
    集成了半导体器件的MRAM

    公开(公告)号：US06285581B1

    公开(公告)日：2001-09-04

    申请号：US09460056

    申请日：1999-12-13

    Applicant: Saied Tehrani ,  Jing Shi

    Inventor： Saied Tehrani ,  Jing Shi

    IPC: G11C1115

    CPC classification number: G11C11/15 ,  H01L27/224 ,  H01L27/228

    Abstract: A magnetic memory cell (10) has a semiconductor layer (12) positioned between first (11) and second (13) ferromagnetic layers forming either a p-n or Schottky junction. A magnetic layer (34) is positioned between the first ferromagnetic layer and a digit line (first) for pinning a magnetic vector within the second ferromagnetic layer. In a 13 embodiment, a gate contact (37) is spaced apart from the layer of semiconductor material for controlling the electron flow through the semiconductor layer.

    Abstract translation: 磁存储单元（10）具有位于形成p-n或肖特基结的第一（11）和第二（13）铁磁层之间的半导体层（12）。 磁性层（34）位于第一铁磁层和数字线（第一）之间，用于固定第二铁磁层内的磁矢量。 在13实施例中，栅极接触（37）与半导体材料层间隔开，用于控制通过半导体层的电子流。

    Method to write/read MRAM arrays
    16.
    发明授权
    Method to write/read MRAM arrays 失效
    写入/读取MRAM阵列的方法

    公开(公告)号：US6081445A

    公开(公告)日：2000-06-27

    申请号：US122722

    申请日：1998-07-27

    Applicant: Jing Shi ,  Theodore Zhu

    Inventor： Jing Shi ,  Theodore Zhu

    IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

    CPC classification number: G11C11/15 ,  G11C11/16

    Abstract: A method of writing/reading an array of magnetoresistive cells, with each cell in the array having associated therewith a first current line that generates an easy axis field and a second orthogonal current line that generates a hard axis field when current is applied thereto. The method includes initially applying a current to the second orthogonal current lines in a first direction that generates a hard axis field to switch end domains in all cells in the array to a fixed direction, and selecting a cell in the array for write/read using a half-select technique including supplying a half-select current to the first current line associated with the selected cell to generate a half-select easy axis field and, simultaneously, supplying a half-select current in the first direction to the second current line associated with the selected cell to generate a half-select hard axis field.

    Abstract translation: 写入/读取磁阻单元阵列的方法，阵列中的每个单元与其相关联，产生易于轴的场的第一电流线和当施加电流时产生硬轴场的第二正交电流线。 该方法包括：首先在第一方向上向第二正交电流线施加电流，该第一方向产生硬轴场，以将阵列中的所有单元中的末端域切换到固定方向，并且使用 半选择技术，包括向与所选择的单元相关联的第一电流线提供半选择电流以产生半选容易轴场，并且同时向第二电流线提供第一方向上的半选择电流 与所选择的单元相关联以生成半轴硬轴字段。

    Low aspect ratio magnetoresistive tunneling junction
    17.
    发明授权
    Low aspect ratio magnetoresistive tunneling junction 失效
    低纵横比磁阻隧道结

    公开(公告)号：US5959880A

    公开(公告)日：1999-09-28

    申请号：US993996

    申请日：1997-12-18

    Applicant: Jing Shi ,  Theodore Zhu ,  Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam

    Inventor： Jing Shi ,  Theodore Zhu ,  Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam

    IPC: G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  G11C11/00

    CPC classification number: G11C11/5607 ,  G11C11/15 ,  G11C11/16 ,  G11C2211/5615

    Abstract: A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.

    Abstract translation: 低纵横比磁阻隧穿结存储单元包括由电绝缘材料分开的两层磁阻材料，以形成磁阻隧道结。 交换相互作用层夹在一层结和第三层磁阻材料之间，以便将一层结的磁矢量与第三层中的磁矢量平行地平行，从而使连接点之间的静磁相互作用 层被取消，并且一层的磁矢量在平行于偏振轴的两个方向中的任一方向上自由移动。 反铁磁材料位于第三层附近，以将磁矢量固定在与偏振轴方向平行的第三层中。

    Magnetic memory cell with increased GMR ratio
    18.
    发明授权
    Magnetic memory cell with increased GMR ratio 失效
    具有增加的GMR比的磁记忆细胞

    公开(公告)号：US5898612A

    公开(公告)日：1999-04-27

    申请号：US861544

    申请日：1997-05-22

    Applicant: Eugene Chen ,  Jing Shi

    Inventor： Eugene Chen ,  Jing Shi

    IPC: G11C11/16 ,  G11C11/15

    CPC classification number: H01L43/08 ,  G11C11/16

    Abstract: First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a first layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. A layer of oxide (e.g. NiO) is positioned on either one or both major surfaces of the magnetic memory cell. The oxide has a thickness (e.g. less than approximately 150 .ANG.) which prevents the layer of oxide from pinning the first and second layers of magnetic material and adapts the layer of oxide to the first and second layers of magnetic material so as to increase the GMR ratio of the magnetic memory cell.

    Abstract translation: 第一层和第二层磁性材料层叠在一起，叠置关系并被夹在其间的非磁性材料的第一层隔开，以形成一个磁存储单元。 氧化物层（例如NiO）位于磁存储单元的一个或两个主表面上。 氧化物具有厚度（例如小于约150安培），其防止氧化物层钉住第一和第二层磁性材料层，并使氧化层适应于第一和第二层磁性材料，以增加GMR 磁存储单元的比例。

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