Abstract:
Apparatus and method to carry out refresh operations on rows of memory cells within a memory device independently of a memory controller during times when there is no activity on a memory bus coupling the memory device to the memory controller that involves the memory device.
Abstract:
Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.
Abstract:
Embodiments of the invention are generally directed to systems, methods, and apparatuses to save dynamic random access memory (DRAM) self-refresh power. In some embodiments, the refresh frequency of a DRAM is reduced and errors are allowed to occur. In error check mode, the DRAM stores data and corresponding error check bits. The error check bits may be used to scrub the memory and fix the errors.
Abstract:
Embodiments of the invention are generally directed to systems, methods, and apparatuses for a common memory device for variable device width and scalable pre-fetch and page size. In some embodiments, a common memory device (such as a DRAM) can operate in any of a number of modes including, for example, a x4 mode, a x8 mode, and a x16 mode. The page size provided by the DRAM may vary depending on the mode of the DRAM. In some embodiments, the amount of data pre-fetched by the DRAM also varies depending on the mode of the DRAM.
Abstract:
The temperature for multiple devices of a memory module are determined. In one example a memory module includes a printed circuit board, a plurality of memory chips on the printed circuit board, each chip containing a plurality of memory cells and a thermal sensor, and a multiplexer on the printed circuit board, independent of the memory chips, coupled to each of the thermal sensors. A current source is coupled to the multiplexer to provide a current to each one of the thermal sensors, and a voltage detector is coupled to the multiplexer to detect a voltage from each of the thermal sensors when a current is applied. A temperature circuit is coupled to the voltage detector to determine a temperature for each memory chip based on the detected voltage.
Abstract:
In some embodiments, a chip includes first and second bank sets, a first data port mapped to the first bank set, and a second data port mapped to the second bank set. Other embodiments are described.
Abstract:
Swizzle information for signal lines on a memory component may be stored on the memory component. The swizzle information may be transmitted to a memory controller which may include logic to receive the swizzle information which is then used to deswizzle data received from the memory component. Data may be transmitted from a memory device to a memory controller in a format that is tolerant of swizzling on signal lines between the device and the controller. The format may include codes having unique of numbers of values. Data may be sent in multi-code bursts that divide a data range into progressively smaller ranges. Other embodiments are described and claimed.
Abstract:
Methods and apparatuses for mapping cache contents to memory arrays. In one embodiment, an apparatus includes a processor portion and a cache controller that maps the cache ways to memory banks. In one embodiment, each bank includes data from one cache way. In another embodiment, each bank includes data from each way. In another embodiment, memory array banks contain data corresponding to sequential cache lines.
Abstract:
Provision and use of sets of isolators to enable the caching of the contents of at least one row of memory cells within a subarray of a bank of a memory device by a row of sense amplifiers associated with the subarray to enable faster access to read the contents of that at least one row through a read operation causing the data to read from the row of sense amplifiers versus from the row of memory cells, directly.
Abstract:
Apparatus and method to carry out checks for memory errors within a memory device independently of a memory controller during times when there is no activity on a memory bus coupling the memory device to the memory controller that involves the memory device.