摘要:
A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel.
摘要:
A method for driving a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device has source/drain diffusion layers spaced from each other in a surface portion of a semiconductor substrate, a laminated insulating film formed on a channel between the source/drain diffusion layers and including a charge storage layer, and a gate electrode formed on the laminated insulating film, the nonvolatile semiconductor memory device changing its data memory state by injection of charges into the charge storage layer. The method includes, before injecting charges to change the data memory state into the charge storage layer: injecting charges having a polarity identical to that of the charges to be injected; and further injecting charges having a polarity opposite to that of the injected charges.
摘要:
A high-accuracy current detecting resistor is provided whose resistance does not change greatly according to temperature change and which has an excellent dielectric strength. In a resistor in which an electrical resistance alloy plate and a radiating metallic plate are laminated via a resin insulating layer, the electrical resistance alloy plate is formed of an alloy containing nickel and copper and is adhered to the resin insulating layer by etching a grain boundary of the alloy in the form of a concave.
摘要:
A game device includes a light control unit configured to change, in a game field in which an object is located, a position of a light source or a direction of radiation by light emitted from the light source based on a control command of a player, a shadow rendering unit configured to render a shadow of the object projected by light emitted from the light source onto a plane of projection defined in the game field; and a character control unit configured to move a character along the shadow of the object.
摘要:
Provided is an insulating film which can be produced easily at low cost and which is excellent in discharge deterioration resistance and mechanical characteristics. The insulating film includes a polyamide imide resin having a weight average molecular weight of 35,000 to 75,000 and an insulating fine particle having an average primary particle diameter of 200 nm or less.
摘要:
A game device includes a shape data storage which stores data of an object disposed in a three-dimensional space, a first rendering unit which sets a point of view and a line of sight and renders the object, a viewpoint changing unit which receives a change instruction indicating a change of the point of view or line of sight and changes the point of view or line of sight, and a character controller which moves a character along the outer surface of the object. The character controller allows the character to move between two-dimensional planes of objects rendered in such a manner that the objects are adjacent to each other in the two-dimensional planes generated by the first rendering unit, and the game device further includes a search unit which searches a set of objects lying within a predetermined range of distance in the two-dimensional plane, and changes the point of view or line of sight so that the searched objects can be rendered adjacently to each other in the two-dimensional plane.
摘要:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.
摘要:
An interphase insulating member allowing reduction in size of a rotating electric machine is provided. The interphase insulating member includes a flat portion interposed between and insulating neighboring two phases of coil ends, and a three-dimensional portion protruding from the flat portion and guiding the coil. On a surface of the flat portion, epoxy resin layer is provided as a reinforcing member.
摘要:
A semiconductor memory element includes: a tunnel insulating film formed on a semiconductor substrate; a HfON charge storage film with Bevan clusters formed on the tunnel insulating film; a blocking film formed on the HfON charge storage film; and a gate electrode formed on the blocking film.
摘要:
An insulation inspection apparatus includes a chamber in which a stator with a winding can be stored, an electrode movable along the outer circumference of a coil end of the stator winding, a voltage application unit applying voltage between the coil end and electrode, a sensor unit sensing leakage current and/or voltage drop between the coil end and electrode, and a pressure reduction unit reducing the pressure in the chamber.