摘要:
Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.
摘要:
An image forming apparatus includes a structure to lift or lower a paper loading tray without a separate drive source while preventing damage to constituent elements even under an abnormal situation in that excessive force is transmitted to the paper loading tray. The image forming apparatus includes a paper feeding cassette including a paper loading tray and a lifting member to lift or lower the paper loading tray, the paper feeding cassette being detachably coupled to the body, a power intermittence device to intermit power to be transmitted from a drive source provided in a body of the image forming apparatus to the lifting member, and a power transmission device to transmit the power transmitted through the power intermittence device to the lifting member by use of at least one worm gear. The image forming apparatus further includes a safety lever having one end to cooperate with a pickup roller assembly. The other end of the safety lever is pivotally rotatable between a first position where the other end of the safety lever restrains the power intermittence device so as not to transmit power to the lifting member and a second position where the other end of the safety lever is spaced apart from the power intermittence device so as to transmit the power to the lifting member.
摘要:
A duplex-printable image forming apparatus which is capable of increasing a speed of duplex printing. The image forming apparatus includes: a developing unit which forms a visible image, which is formed of a developer, on a printing medium; a fixing unit which fixes the visible image formed on the printing medium onto the printing medium; a discharging roller unit which can be regularly/reversely rotated such that the printing medium passed through the fixing unit is conveyed to the developing unit along a duplex printing path or is discharged out of the apparatus; and an intermediate conveying unit which is interposed between the fixing unit and the discharging roller unit and selectively holds the printing medium.
摘要:
A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.
摘要:
A doping paste includes an inorganic particle including a phosphorus-containing silicon compound and an organic vehicle, wherein a concentration of phosphorus at an interior portion of the inorganic particle is greater than a concentration of phosphorous at a surface of the inorganic particle.
摘要:
Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.
摘要:
A paper supply apparatus to supply paper to printing devices such as printers or copiers. The paper supply apparatus includes a knock-up plate on which papers are stacked, a pick-up roller that feeds the papers into the printing device by picking up the papers stacked on the knock-up plate, a lifter that lifts the knock-up plate so that the papers stacked on the knock-up plate continuously contact with the pick-up roller, a motor for driving apparatuses in the printing device, a spring clutch that connects the motor to the lifter to transmit power, and a brake lever that selectively transmits power according to height variations of the pick-up roller via the spring clutch. In the paper supply apparatus, since the knock-up plate can be lifted using the power of the motor that is used for driving other apparatuses of the printing device, an exclusive motor for supplying paper is unnecessary, thereby reducing the number of parts and power consumption.
摘要:
A fabrication method and a related semiconductor device are disclosed. The method includes; forming a gate structure on a semiconductor substrate, the gate structure comprising a stacked combination a gate dielectric pattern, a gate, a capping layer pattern and an epitaxial blocking layer pattern, forming sidewall spacers on the gate structure covering at least sidewall portions of the gate dielectric pattern, the gate, and the capping layer pattern, wherein the epitaxial blocking layer pattern is exposed on a top surface of the gate structure, forming an elevated epitaxial layer on the semiconductor substrate outside the gate structure using a selective epitaxial growth process, and forming elevated source/drain regions by applying an ion implantation process to the semiconductor substrate following formation of the elevated epitaxial layer, wherein the epitaxial blocking layer is a nitrogen enhanced layer relative to the capping layer pattern.
摘要:
An image forming apparatus includes a main body having an opening, and a consumable article separably installed in the main body through the opening. The consumable article includes a connector to perform a connection. The main body includes a connection terminal protruding toward the connector and a guide protrusion to prevent the connection terminal from coming into contact with a portion adjacent to the connector. The consumable article is provided with a guide groove into which the guide protrusion is inserted when the connection terminal and the connector are positioned to correspond to each other. When the connection terminal and the connector reach positions corresponding to each other, the guide protrusion is into the guide groove to perform the connection between the connection terminal and the connector, which prevents friction between the connection terminal and a portion adjacent to the connector.