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112 条记录 (耗时 0.016 秒)

    Semiconductor laser array device
    12.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4811351A

    公开(公告)日：1989-03-07

    申请号：US35477

    申请日：1987-04-07

    申请人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hidenori Kawanishi

    发明人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto ,  Hidenori Kawanishi

    IPC分类号： H01S5/00 ,  G02B6/122 ,  H01S5/028 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/028 ,  G02B6/122 ,  H01S5/4068

    摘要： A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.

    摘要翻译： 一种半导体激光器阵列器件，包括衬底; 位于所述基板上的折射率波导区域; 傅里叶变换区域，其邻近所述波导区域，并且其中来自所述波导区域的同步相位发射的激光经历傅里叶变换，位于所述基板上; 以及反射镜，其与所述傅立叶变换区域相邻，并且所述经转换的0°相移模式的激光被选择性地反射以入射到所述波导区域。

    Semiconductor laser array device
    13.
    发明授权
    Semiconductor laser array device 失效
    半导体激光阵列器件

    公开(公告)号：US4742526A

    公开(公告)日：1988-05-03

    申请号：US816311

    申请日：1986-01-06

    申请人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto

    发明人： Sadayoshi Matsui ,  Mototaka Taneya ,  Mitsuhiro Matsumoto

    IPC分类号： G02B6/28 ,  H01S5/40 ,  H01S3/19 ,  H01S3/082 ,  H01S3/13

    CPC分类号： G02B6/2804 ,  H01S5/4068

    摘要： A semiconductor laser array device comprising an optical waveguide which is in a single mode or a multiple mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form a plurality of branching waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser beams and which are parallel to each other near the facets, thereby oscillating laser beams with a 0.degree.-phase shift therebetween.

    摘要翻译： 一种半导体激光器阵列器件，包括在其中心部分处于单一模式或多模式的光波导，并且在其两端部分别处于分支模式，以形成多个分支波导，该分支波导相对于 到激光束的波导方向，并且在面附近彼此平行，从而在其间振荡激光束0°相移。

    Semiconductor laser array
    14.
    发明授权
    Semiconductor laser array 失效
    半导体激光阵列

    公开(公告)号：US4694461A

    公开(公告)日：1987-09-15

    申请号：US700018

    申请日：1985-02-08

    申请人： Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Mototaka Taneya

    发明人： Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Mototaka Taneya

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/4031 ,  H01S5/2231

    摘要： A semiconductor laser array includes a p-GaAs substrate, a p-Ga.sub.1-x Al.sub.x As cladding layer, a Ga.sub.1-y Al.sub.y As active layer, an n-Ga.sub.1-z Al.sub.z As optical guide layer, an n-Ga.sub.1-x Al.sub.x As cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed in the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga.sub.1-z Al.sub.z As optical guide layer. A Ga.sub.1-b Al.sub.b As high resistance layer is filled in the plurality of stripe shaped grooves so that injecting current is divided into a plurality of paths, and each laser emitting region is optically, phase coupled to each other with a phase difference of zero degree.

    摘要翻译： 半导体激光器阵列包括p-GaAs衬底，p-Ga1-xAlxAs包层，Ga1-yAlyAs有源层，n-Ga1-zAlzAs光导层，n-Ga1-xAlxAs覆层和n-GaAs 盖层由液相外延生长法形成。 在n-GaAs覆盖层的表面上形成多个条状槽，使得槽的底部到达n-Ga1-zAlzAs光导层的中间。 GaI-bAlbAs高电阻层填充在多个条形槽中，使得注入电流被分成多个路径，并且每个激光发射区域以0度的相位差彼此光学地相互耦合。

    Process for preventing melt-back in the production of aluminum-containing laser devices
    15.
    发明授权
    Process for preventing melt-back in the production of aluminum-containing laser devices 失效
    制造含铝激光装置时防止熔融回收的方法

    公开(公告)号：US4632709A

    公开(公告)日：1986-12-30

    申请号：US781707

    申请日：1985-09-30

    申请人： Mototaka Taneya ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto ,  Hiroshi Hayashi

    发明人： Mototaka Taneya ,  Sadayoshi Matsui ,  Mitsuhiro Matsumoto ,  Hiroshi Hayashi

    IPC分类号： H01L21/20 ,  H01L21/208 ,  H01S5/00

    CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

    摘要： A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.

    摘要翻译： 一种制造半导体器件的方法包括：（1）在包含铝的第一半导体层上形成不含铝的薄半导体膜，所述第一半导体层设置在基板上一个或多个（2）在所述薄半导体膜上形成沟槽， 通道或通道到达或穿过所述第一半导体层以暴露所述衬底的一部分，导致用于在其上继续晶体生长的沟道衬底，以及（3）通过使用在所述沟道衬底上的外延生长晶体层产生 具有足够高以防止所述第一半导体层经历回熔的过饱和度的晶体生长溶液。

    Illuminator including optical transmission mechanism
    20.
    发明授权
    Illuminator including optical transmission mechanism 有权
    照明器包括光传输机构

    公开(公告)号：US07389051B2

    公开(公告)日：2008-06-17

    申请号：US10861126

    申请日：2004-06-03

    申请人： Tatsuya Morioka ,  Mototaka Taneya

    发明人： Tatsuya Morioka ,  Mototaka Taneya

    IPC分类号： H04B10/00

    CPC分类号： H04B10/1141 ,  H04B10/116

    摘要： An illuminator including an optical transmission mechanism includes a transmission-side electric circuit for forming electric signals modulated in response to information, a light source for emitting intensity-modulated light in response to the electric modulated signals, optical wavelength conversion means including fluorescent material for converting part of the intensity-modulated light into illumination light, photoelectric conversion means for receiving another part of the modulated light and converting this part into reproduced electric modulated signals and a receiving-side electric circuit for reproducing the information from the reproduced electric modulated signals.

    摘要翻译： 包括光传输机构的照明装置包括用于响应于信息而形成电信号的发送侧电路，响应于电调制信号发射强度调制光的光源，包括用于转换的荧光材料的光波长转换装置 将强度调制光的一部分转换成照明光;光电转换装置，用于接收调制光的另一部分并将该部分转换成再生的电调制信号;以及接收侧电路，用于从再现的电调制信号再现信息。