公开(公告)号：US20090000738A1

公开(公告)日：2009-01-01

申请号：US12145393

申请日：2008-06-24

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: C23C16/52

CPC classification number: H01J37/321

Abstract: An arrangement for enabling local control of power delivery within a plasma processing system having a plasma processing chamber during processing of a substrate is provided. The arrangement includes a dielectric window and an inductive arrangement. The inductive arrangement is disposed above the dielectric window to enable power to couple with a plasma in the plasma processing system. The inductive arrangement includes a set of inductive elements, which provides the local control of power delivery to create a substantially uniform plasma in the plasma processing chamber.

Abstract translation: 提供了一种用于在处理基板期间具有等离子体处理室的等离子体处理系统内的功率输送的局部控制的装置。 该装置包括电介质窗和感应布置。 感应布置设置在电介质窗口之上，以使功率与等离子体处理系统中的等离子体耦合。 感应装置包括一组电感元件，其提供功率输送的局部控制以在等离子体处理室中产生基本均匀的等离子体。

公开(公告)号：US07274004B2

公开(公告)日：2007-09-25

申请号：US11001218

申请日：2004-11-30

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: H05B3/68 ,  C23C16/00

CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01L21/67103 ,  H01L21/67248

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat-support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平坦支撑件保持工件并设置在绝热体上。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

公开(公告)号：US07152011B2

公开(公告)日：2006-12-19

申请号：US10927161

申请日：2004-08-25

Applicant: Neil Benjamin ,  Richard Alan Gottscho ,  Nicolas Bright ,  Robert Steger

Inventor： Neil Benjamin ,  Richard Alan Gottscho ,  Nicolas Bright ,  Robert Steger

IPC: G06F19/00

CPC classification number: G01R31/3187 ,  G05B19/4184 ,  G05B2219/31362 ,  G05B2219/31463 ,  Y02P90/14 ,  Y02P90/86

Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

Abstract translation: 公开了一种基板处理系统中的部件管理方法。 衬底处理系统具有一组组件，该组组件中的至少多个组件被指定为智能组件，多个组件的每个组件具有智能组件增强（ICE）。 该方法包括查询多个组件以从它们各自的ICE请求它们各自的唯一标识数据。 该方法还包括如果多个组件中的任何组件响应于查询，则从多个组件接收唯一的标识数据。 该方法另外包括：如果在预期第一组件识别数据时多个组件的第一组件不能提供第一组件唯一标识数据，则标记第一组件以用于校正动作。

公开(公告)号：US20060047458A1

公开(公告)日：2006-03-02

申请号：US10927161

申请日：2004-08-25

Applicant: Neil Benjamin ,  Richard Gottscho ,  Nicolas Bright ,  Robert Steger

Inventor： Neil Benjamin ,  Richard Gottscho ,  Nicolas Bright ,  Robert Steger

IPC: G06F19/00

CPC classification number: G01R31/3187 ,  G05B19/4184 ,  G05B2219/31362 ,  G05B2219/31463 ,  Y02P90/14 ,  Y02P90/86

Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

公开(公告)号：US06847014B1

公开(公告)日：2005-01-25

申请号：US10062395

申请日：2002-02-01

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: H01L21/00 ,  H05B3/68

CPC classification number: H01L21/67248 ,  H01J2237/2001 ,  H01L21/67103

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

公开(公告)号：US5708250A

公开(公告)日：1998-01-13

申请号：US623774

申请日：1996-03-29

Applicant: Neil Benjamin ,  Seyed Jafar Jafarian-Tehrani ,  Max Artusy

Inventor： Neil Benjamin ,  Seyed Jafar Jafarian-Tehrani ,  Max Artusy

IPC: H01L21/683 ,  H02N13/00 ,  B23K10/00

CPC classification number: H02N13/00 ,  H01L21/6831 ,  H01L21/6833 ,  Y10S269/903

Abstract: An r.f. excited vacuum plasma processor has a workpiece held in place by a monopolar or bipolar electrostatic chuck having an electrode that develops peak r.f. voltages over a wide amplitude range. A chuck DC power supply source is connected to the chuck. An r.f. peak detecting circuit coupled with the electrode is part of a circuit for controlling the DC voltage applied by the chuck power supply to the chuck. The control circuit supplies an unamplified replica of a DC voltage derived by the peak detecting circuit to the chuck DC power supply source via a DC circuit including only passive elements so the level of the DC voltage applied to the chuck varies in response to variations in the peak amplitude of the r.f. voltage. The peak detector includes at least several series connected diodes having electrodes polarized in the same direction or two stacks of series connected diodes. In one of the stacks, the diode electrodes are polarized in one direction and in the other stack the diode electrodes are polarized in the other direction. The diodes of the peak detecting circuit are arranged so the DC bias voltage supplied to the chuck and the peak value of the r.f. voltage developed at the electrode have the same order of magnitude.

Abstract translation: 一个r.f. 激发真空等离子体处理器通过具有产生峰值r.f的电极的单极或双极静电卡盘将工件保持在适当位置。 电压在宽幅度范围内。 卡盘直流电源连接到卡盘。 一个r.f. 与电极耦合的峰值检测电路是用于控制由卡盘电源向卡盘施加的直流电压的电路的一部分。 控制电路通过仅包括无源元件的DC电路向峰值检测电路提供由峰值检测电路导出的直流电压的未放大副本给卡盘直流电源，因此施加到卡盘上的直流电压的电平随着 峰的振幅 电压。 峰值检测器包括至少几个串联连接的二极管，其具有在相同方向上极化的电极或两个串联连接的二极管。 在一个堆叠中，二极管电极在一个方向上极化，而在另一个堆叠中，二极管电极在另一个方向上极化。 峰值检测电路的二极管布置成提供给卡盘的直流偏置电压和r.f.的峰值。 在电极处产生的电压具有相同的数量级。

公开(公告)号：US09051647B2

公开(公告)日：2015-06-09

申请号：US12605027

申请日：2009-10-23

Applicant: David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

Inventor： David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC: H01L21/306 ,  C23C16/00 ,  C23C16/455 ,  C23C16/507 ,  H01J37/32

CPC classification number: C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：US08809747B2

公开(公告)日：2014-08-19

申请号：US13446335

申请日：2012-04-13

Applicant: John Pease ,  Neil Benjamin

Inventor： John Pease ,  Neil Benjamin

IPC: H05B3/68 ,  B23K15/02 ,  B23K13/08 ,  H05B1/02 ,  H05B3/54 ,  H05B3/40 ,  H05B3/02 ,  H05B3/16 ,  H05B3/44 ,  H05B3/10 ,  A21B2/00 ,  D02J13/00

CPC classification number: H01L21/67103 ,  H05B1/0233

Abstract: A method of operating a heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus, wherein the heating plate comprises power supply lines and power return lines and respective heater zone connected between every pair of power supply line and power return line. The method reduces maximum currents carried by the power supply lines and power return lines by temporally spreading current pulses for powering the heater zones.

Abstract translation: 一种操作用于在半导体处理装置中支撑半导体衬底的用于支撑半导体衬底的衬底支撑组件的加热板的方法，其中所述加热板包括电源线和功率回流管线以及连接在每对电源线和电源之间的相应加热器区域 返回线。 该方法通过暂时扩展用于为加热器区域供电的电流脉冲来减小由电源线和功率返回线承载的最大电流。

公开(公告)号：US20130334171A1

公开(公告)日：2013-12-19

申请号：US13969411

申请日：2013-08-16

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H05H1/46

CPC classification number: H05H1/46 ,  C23C16/45563 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A method for providing steerability in a plasma processing environment during substrate processing is provided. The method includes managing power distribution by controlling power being delivered into the plasma processing environment through an array of electrical elements. The method also includes directing gas flow during substrate processing by controlling the amount of gas flowing through an array of gas injectors into the plasma processing environment, wherein individual ones of the array of gas injectors are interspersed between the array of electrical elements. The method further includes controlling gas exhausting during substrate processing by managing amount of gas exhaust being removed by an array of pumps, wherein the array of electrical elements, the array of gas injectors, and the array of pumps are arranged to create a plurality of plasma regions, each plasma region being substantially similar, thereby creating a uniform plasma region across the substrate.

Abstract translation: 提供了一种在衬底处理期间在等离子体处理环境中提供可操纵性的方法。 该方法包括通过控制通过电气元件阵列传送到等离子体处理环境中的功率来管理功率分配。 该方法还包括通过控制气体喷射器阵列中流动到等离子体处理环境中的气体的量来引导衬底处理过程中的气体流动，其中气体喷射器阵列中的单个气体喷射器阵列分散在电气元件阵列之间。 该方法还包括通过管理通过泵阵列去除的排气量来控制衬底处理期间的排气，其中电气元件阵列，气体喷射器阵列和泵阵列被布置成产生多个等离子体 区域，每个等离子体区域基本相似，从而在衬底上产生均匀的等离子体区域。

公开(公告)号：US20130270250A1

公开(公告)日：2013-10-17

申请号：US13446335

申请日：2012-04-13

Applicant: John Pease ,  Neil Benjamin

Inventor： John Pease ,  Neil Benjamin

IPC: H05B3/68

CPC classification number: H01L21/67103 ,  H05B1/0233

Abstract: A method of operating a heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus, wherein the heating plate comprises power supply lines and power return lines and respective heater zone connected between every pair of power supply line and power return line. The method reduces maximum currents carried by the power supply lines and power return lines by temporally spreading current pulses for powering the heater zones.

Abstract translation: 一种操作用于在半导体处理装置中支撑半导体衬底的用于支撑半导体衬底的衬底支撑组件的加热板的方法，其中所述加热板包括电源线和功率回流管线以及连接在每对电源线和电源之间的相应加热器区域 返回线。 该方法通过暂时扩展用于为加热器区域供电的电流脉冲来减小由电源线和功率返回线承载的最大电流。