公开(公告)号：US5354708A

公开(公告)日：1994-10-11

申请号：US091634

申请日：1993-07-14

Applicant: Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

IPC: C30B29/48 ,  C23C16/18 ,  C30B25/02 ,  C30B25/10 ,  H01L21/205 ,  H01L21/365 ,  H01L21/20

CPC classification number: H01L21/02395 ,  C30B25/02 ,  C30B25/105 ,  C30B29/48 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/041 ,  Y10S148/064

Abstract: The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.

Abstract translation: 通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为 至少高于化合物在生长温度下的带隙能量。

公开(公告)号：US5990531A

公开(公告)日：1999-11-23

申请号：US968680

申请日：1997-11-12

Applicant: Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

Inventor： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

IPC: H01L29/20 ,  H01L21/285 ,  H01L21/335 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/76

CPC classification number: H01L29/518 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/1079 ,  H01L29/66462 ,  H01L29/78681 ,  H01L29/802 ,  H01L29/2003

Abstract: The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

Abstract translation: 本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。 通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。

公开(公告)号：US5547897A

公开(公告)日：1996-08-20

申请号：US259944

申请日：1994-06-15

Applicant: Nikhil R. Taskar ,  Dennis Gallagher ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Dennis Gallagher ,  Donald R. Dorman

IPC: C30B29/48 ,  C23C16/18 ,  C30B25/02 ,  C30B25/10 ,  H01L21/205 ,  H01L21/365 ,  H01L21/22

CPC classification number: C30B25/02 ,  C30B25/105 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/064

Abstract: The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.

Abstract translation: 通过使用叔丁胺作为掺杂剂载体，II-VI半导体化合物的生长外延层中的N受体的浓度增强，并且通过使用光辅助生长进一步增强，其使用波长为 在200-250nm的范围内。

公开(公告)号：US5399524A

公开(公告)日：1995-03-21

申请号：US133545

申请日：1993-10-07

Applicant: Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

IPC: H01L21/28 ,  H01L21/445 ,  H01L33/00 ,  H01L33/28 ,  H01L33/40 ,  H01L21/44 ,  H01L21/48

CPC classification number: H01L33/40 ,  H01L21/445 ,  H01L33/28

Abstract: A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.

Abstract translation: 在衬底上提供的p型ZnSe或ZnSSe层上提供改进的欧姆接触的方法，包括将该层浸入加热到超过200℃的Hg浴中超过2小时。

公开(公告)号：US07119372B2

公开(公告)日：2006-10-10

申请号：US10693126

申请日：2003-10-24

Applicant: Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

Inventor： Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

IPC: H01L27/15

CPC classification number: H01L33/405 ,  H01L33/387 ,  H01L2933/0083

Abstract: A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

Abstract translation: 倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化 以限定装置台面（30,30'，30“）。 反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。 反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触， 设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。 导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

公开(公告)号：US06885004B2

公开(公告)日：2005-04-26

申请号：US10073702

申请日：2002-02-11

Applicant: Nikhil R. Taskar ,  Rameshwar Nath Shargava

Inventor： Nikhil R. Taskar ,  Rameshwar Nath Shargava

IPC: G01T1/20 ,  G01T1/29 ,  G21K4/00

CPC classification number: G01T1/2921 ,  G01T1/20 ,  G21K4/00 ,  G21K2004/06 ,  G21K2004/12 ,  H01J2231/50036 ,  H01J2231/5016

Abstract: X-ray imaging screens utilizing phosphors disposed in microchannels disposed in a plate. This application relates to the “tiling” of such microchannel plates to form a larger imaging area and to the use of “storage phosphors” in the microchannel plates which enables the phosphors to be read out after exposure and from the side exposed to the X-rays. The storage phosphor screens of the present invention provide significantly increased resolution than the prior art storage phosphor screens.

Abstract translation: 使用设置在板中的微通道中的荧光体的X射线成像屏幕。 本申请涉及这种微通道板的“平铺”，以形成更大的成像区域，并且在微通道板中使用“储存磷光体”，这使得在曝光之后和从暴露于X射线的一侧可以读出荧光体。 射线 本发明的存储荧光屏提供比现有技术的存储荧光屏显着增加的分辨率。

公开(公告)号：US06300640B1

公开(公告)日：2001-10-09

申请号：US09197248

申请日：1998-11-20

Applicant: Rameshwar Nath Bhargava ,  Nikhil R. Taskar ,  Vishal Chhabra ,  John Victor D. Veliadis

Inventor： Rameshwar Nath Bhargava ,  Nikhil R. Taskar ,  Vishal Chhabra ,  John Victor D. Veliadis

IPC: G01T120

CPC classification number: G01T1/20 ,  G21K2004/06 ,  G21K2004/12

Abstract: A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The walls of the microchannels and/or the substrate surfaces include light reflective coatings so as to reflect the light emitted by the phosphors to the light collecting devices, such as film or an electronic detector. The coatings can be either radiation transparent or filtering/attenuating depending on the particular application.

Abstract translation: 用于将诸如X射线的辐射转换成可见光的复合荧光屏。 屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了具有大约10微米或更小的直径的多个紧密间隔的微通道。 沉积在每个微通道内的是在辐射作用时发光的多种荧光体。 微通道和/或衬底表面的壁包括光反射涂层，以将由磷光体发射的光反射到诸如膜或电子检测器的光收集装置。 根据具体应用，涂层可以是辐射透明的或过滤/衰减的。

公开(公告)号：US6113691A

公开(公告)日：2000-09-05

申请号：US451341

申请日：1995-05-26

Applicant: Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

Inventor： Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

IPC: C30B29/48 ,  C30B25/02 ,  C30B25/16 ,  H01L21/365 ,  H01L33/00 ,  H01S5/327

CPC classification number: H01L33/0087 ,  C30B25/02 ,  C30B29/48 ,  H01S2304/04 ,  H01S5/327

Abstract: Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.

Abstract translation: 提供半导体化合物及其制造方法，其中使用使用MOVPE生长II-VI半导体化合物的至少一个外延层的方法，所述方法包括以下步骤：将基底经受有机金属和氢化物前体化合物 MOVPE反应器在超低压下，即在约10至1mTorr范围内的压力，由此有机金属和氢化物前体化合物在基体表面反应而在气相中没有实质的反应。 外延层和半导体化合物可用于蓝色激光器件。

公开(公告)号：US5915164A

公开(公告)日：1999-06-22

申请号：US583148

申请日：1995-12-28

Applicant: Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

Inventor： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

IPC: H01L29/20 ,  H01L21/285 ,  H01L21/335 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L21/00

CPC classification number: H01L29/518 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/1079 ,  H01L29/66462 ,  H01L29/78681 ,  H01L29/802 ,  H01L29/2003

Abstract: The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

Abstract translation: 本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。 通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。