PROCESS FOR THE PREPARATION OF ATAZANAVIR OR ITS BISULFATE SALT
    14.
    发明申请
    PROCESS FOR THE PREPARATION OF ATAZANAVIR OR ITS BISULFATE SALT 审中-公开
    制备ATAZANAVIR或其BISULFATE盐的方法

    公开(公告)号:US20140343290A1

    公开(公告)日:2014-11-20

    申请号:US14235127

    申请日:2012-07-25

    CPC classification number: C07D213/42

    Abstract: The present invention relates to an improved process for the preparation of atazanavir bisulfate, an inhibitor of retroviral aspartate protease. The process of the present invention comprises conversion of 1,1-dimethylethyl[(2S,3R)-4-chloro-3-hydroxy-phenylbutan-2-yl]carbamate (Formula II) into 1-[4-(pyridine-2-yl)-phenyl]-4(S)-5 hydroxy-2-N-tert-butoxycarbonylamino-5(S)—N—(N-methoxycarbonyl-(L)-tert-leucyl)amino-6-phenyl-2-azahexane (Formula VII) without isolating intermediate compounds formed therein, followed by its subsequent conversion to atazanavir or its bisulfate salt.

    Abstract translation: 本发明涉及一种制备逆转录病毒天冬氨酸蛋白酶抑制剂阿扎那韦硫酸氢盐的改进方法。 本发明的方法包括将[(2S,3R)-4-氯-3-羟基 - 苯基丁-2-基]氨基甲酸酯(式II)的1,1-二甲基乙基酯转化为1- [4-(吡啶-2 - 基) - 苯基] -4(S)-5-羟基-2-N-叔丁氧基羰基氨基-5(S)-N-(N-甲氧基羰基 - (L) - 叔 - 亮氨酰基)氨基-6-苯基-2 (式Ⅶ),而不分离其中形成的中间体化合物,随后转化成阿扎那韦或其硫酸氢盐。

    Proppant having a polyamide imide coating
    16.
    发明授权
    Proppant having a polyamide imide coating 失效
    支撑剂具有聚酰胺酰亚胺涂层

    公开(公告)号:US08770294B2

    公开(公告)日:2014-07-08

    申请号:US13186942

    申请日:2011-07-20

    CPC classification number: C09K8/805 C09K8/62 Y10T428/2991 Y10T428/2998

    Abstract: A proppant comprises a particle and a polyamide imide coating disposed on the particle. A method of forming the proppant comprises the steps of providing the particle, providing the polyamide imide coating, and coating the particle with the polyamide imide coating.

    Abstract translation: 支撑剂包括颗粒和设置在颗粒上的聚酰胺酰亚胺涂层。 形成支撑剂的方法包括提供颗粒,提供聚酰胺酰亚胺涂层以及用聚酰胺酰亚胺涂层涂覆颗粒的步骤。

    Radiation hardened bipolar injunction transistor
    18.
    发明授权
    Radiation hardened bipolar injunction transistor 有权
    辐射硬化双极性抑制晶体管

    公开(公告)号:US08759188B2

    公开(公告)日:2014-06-24

    申请号:US13334087

    申请日:2011-12-22

    CPC classification number: H01L29/402 H01L29/66272 H01L29/7322

    Abstract: A method for integrating a bipolar injunction transistor in a semiconductor chip includes the steps of forming an intrinsic base region of a second type of conductivity extending in the collector region from a main surface through an intrinsic base window of the sacrificial insulating layer, forming an emitter region of the first type of conductivity extending in the intrinsic base region from the main surface through an emitter window of the sacrificial insulating layer, removing the sacrificial insulating layer, forming an intermediate insulating layer on the main surface, and forming an extrinsic base region of the second type of conductivity extending in the intrinsic base region from the main surface through an extrinsic base window of the intermediate insulating layer.

    Abstract translation: 一种用于在半导体芯片中积分双极性抑制晶体管的方法包括以下步骤:在主表面通过牺牲绝缘层的本征基极窗形成在集电极区域中延伸的第二类型导电的本征基极区域,形成发射极 所述第一类型的导电性区域从所述主表面延伸穿过所述牺牲绝缘层的发射极窗口,去除所述牺牲绝缘层,在所述主表面上形成中间绝缘层,以及形成所述牺牲绝缘层的外部基极区域 该第二类型的导电性在本征基区中从主表面穿过中间绝缘层的非本征基窗延伸。

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