公开(公告)号：US08927748B2

公开(公告)日：2015-01-06

申请号：US13569906

申请日：2012-08-08

Applicant: Rajesh Odedra ,  Neil Boag ,  Jeff Anthis ,  Ravi Kanjolia ,  Mark Saly

Inventor： Rajesh Odedra ,  Neil Boag ,  Jeff Anthis ,  Ravi Kanjolia ,  Mark Saly

IPC: C07F13/00 ,  C23C16/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768

CPC classification number: C07F13/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/45553 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/76841

Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted η3-allyl)(carbonyl)metal complexes.

Abstract translation: 有机金属络合物及其在薄膜沉积中的应用，如CVD和ALD。 有机金属络合物是（烷基取代的和3-烯丙基）（羰基）金属络合物。

公开(公告)号：USRE45124E1

公开(公告)日：2014-09-09

申请号：US13842164

申请日：2013-03-15

Applicant: Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

Inventor： Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

IPC: H05H1/24 ,  C23C16/00 ,  C23C8/00

CPC classification number: C23C16/45553

Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

Abstract translation: 提供了通过原子层沉积形成含钛膜的方法。 所述方法包括将至少一种前体递送至底物，其中所述至少一种前体在结构上相应于式I：其中：R是C 1 -C 6 - 烷基; n为零，1，2，3，4或5; L是C1-C6-烷氧基或氨基，其中氨基任选独立地被C 1 -C 6 - 烷基取代1或2次。

公开(公告)号：US20110165780A1

公开(公告)日：2011-07-07

申请号：US12992268

申请日：2009-05-29

Applicant: Ravi Kanjolia ,  Rajesh Odedra ,  Jeff Anthis ,  Neil Boag

Inventor： Ravi Kanjolia ,  Rajesh Odedra ,  Jeff Anthis ,  Neil Boag

IPC: H01L21/314

CPC classification number: C23C16/16 ,  C23C16/45525

Abstract: A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO)3 wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen.

Abstract translation: 提供了通过原子层沉积形成含钌膜的方法。 所述方法包括将至少一种前体递送至底物，所述至少一种前体在结构上相应于式I：（L）Ru（CO）3，其中L选自直链或支链的C 2 -C 6 - 烯基 和直链或支链C 1-6 - 烷基; 并且其中L任选被一个或多个独立地选自C 2 -C 6 - 烯基，C 1-6 - 烷基，烷氧基和NR 1 R 2的取代基取代; 其中R1和R2独立地是烷基或氢。

公开(公告)号：US20090074983A1

公开(公告)日：2009-03-19

申请号：US12207973

申请日：2008-09-10

Applicant: Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

Inventor： Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

IPC: C23C16/513 ,  C23C16/44 ,  C23C16/48

CPC classification number: C23C16/45553

Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

Abstract translation: 提供了通过原子层沉积形成含钛膜的方法。 所述方法包括将至少一种前体递送至底物，其中所述至少一种前体在结构上相应于式I：其中：R是C 1 -C 6 - 烷基; n为零，1，2，3，4或5; L是C1-C6-烷氧基或氨基，其中氨基任选独立地被C 1 -C 6 - 烷基取代1或2次。

公开(公告)号：US09028917B2

公开(公告)日：2015-05-12

申请号：US13388861

申请日：2010-07-27

Applicant: Rajesh Odedra ,  Neil Boag ,  Jeff Anthis ,  Ravi Kanjolia

Inventor： Rajesh Odedra ,  Neil Boag ,  Jeff Anthis ,  Ravi Kanjolia

IPC: C23C16/00 ,  C07F15/00 ,  C07F15/06 ,  C23C16/40 ,  C23C16/455

CPC classification number: C07F15/06 ,  C23C16/406 ,  C23C16/45553

Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.

Abstract translation: 提供了一种通过气相沉积工艺形成含钴薄膜的方法。 该方法包括使用至少一种在结构上对应于式（I）的前体; 其中R 1和R 2独立地为C 2 -C 8 - 烷基; x为零，1或2; y为0或1; 其中x和y两者不能同时为零。

公开(公告)号：US20130196065A1

公开(公告)日：2013-08-01

申请号：US13817591

申请日：2011-08-25

Applicant: Peter Nicholas Heys ,  Rajesh Odedra ,  Sarah Louise Hindley

Inventor： Peter Nicholas Heys ,  Rajesh Odedra ,  Sarah Louise Hindley

IPC: B05D1/00 ,  C07F11/00

CPC classification number: B05D1/60 ,  C07F11/00 ,  C07F17/00 ,  C23C16/405 ,  C23C16/45525

Abstract: Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR1R2; R1 and R2 are C1-C6-alkyl or hydrogen; R is C1-C6-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]4 are disclosed herein.

Abstract translation: 本文公开的钼（IV）酰胺配合物在结构上对应于式（I）：其中：L是-NR 1 R 2; R1和R2是C1-C6-烷基或氢; R是C 1 -C 6 - 烷基; 此外，本文公开了使用式（I）络合物和Mo [N（Me）（Et）] 4通过原子层沉积（ALD）形成MoO 2膜的方法。

公开(公告)号：US08272626B2

公开(公告)日：2012-09-25

申请号：US12093893

申请日：2006-10-12

Applicant: Hugh Cunning ,  Graham Williams ,  Rajesh Odedra ,  Ravi Kanjolia

Inventor： Hugh Cunning ,  Graham Williams ,  Rajesh Odedra ,  Ravi Kanjolia

IPC: C23C16/00

CPC classification number: C23C16/4481

Abstract: A bubbler (2) for delivering liquid or solid metalorganic compounds to a reactor site. The bubbler has an inner and outer chamber and has a member (14) positioned between its inlet (6) and outlet (8) that is provided with a plurality of apertures therein. The member (14) is preferably in the form of a perforated disc having a predefined density of apertures therein to provide optimum pick up and flow of carrier gas through the bubbler.

Abstract translation: 用于将液体或固体金属有机化合物输送到反应器位置的起泡器（2）。 起泡器具有内室和外室，并且具有位于其入口（6）和出口（8）之间的构件（14），其中设有多个孔。 构件（14）优选为具有预定密度的孔的穿孔盘的形式，以提供载气通过起泡器的最佳拾取和流动。

公开(公告)号：US08221852B2

公开(公告)日：2012-07-17

申请号：US12207973

申请日：2008-09-10

Applicant: Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

Inventor： Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

IPC: H05H1/24 ,  C23C16/00 ,  C23C8/00

CPC classification number: C23C16/45553

Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

Abstract translation: 提供了通过原子层沉积形成含钛膜的方法。 所述方法包括将至少一种前体递送至底物，其中所述至少一种前体在结构上相应于式I：其中：R是C 1 -C 6 - 烷基; n为零，1，2，3，4或5; L是C1-C6-烷氧基或氨基，其中氨基任选独立地被C 1 -C 6 - 烷基取代1或2次。

公开(公告)号：US20120178266A1

公开(公告)日：2012-07-12

申请号：US13386109

申请日：2010-07-19

Applicant: Peter Nicholas Heys ,  Rajesh Odedra ,  Andrew Kingsley

Inventor： Peter Nicholas Heys ,  Rajesh Odedra ,  Andrew Kingsley

IPC: H01L21/314 ,  C09D5/25

CPC classification number: C23C16/405 ,  C23C16/448 ,  C23C16/4486 ,  C23C16/45553

Abstract: Compositions and methods for forming titanium-containing thin films are provided. The compositions comprise at least one precursor selected from the group consisting of (methylcyclopentadienyl)Ti(NMe2)3, (ethylcyclopentadienyl)Ti(NMe2)3, (isopropylcyclopentadienyl)Ti(NMe2)3, (methylcyclopentadienyl)Ti(NEt2)3, (methylcyclopentadienyl)Ti(NMeEt)3, (ethylcyclopentadienyl)Ti(NMeEt)3 and (methylcyclopentadienyl)Ti(OMe)3; and at least one liquification co-factor other than the at least one precursor; wherein the at least one liquification co-factor is present in amount sufficient to co-act with the at least one precursor, and in combination with the at least one precursor, forms a liquid composition.

Abstract translation: 提供了用于形成含钛薄膜的组合物和方法。 该组合物包含至少一种选自（甲基环戊二烯基）Ti（NMe 2）3，（乙基环戊二烯基）Ti（NMe 2）3，（异丙基环戊二烯基）Ti（NMe 2）3，（甲基环戊二烯基）Ti（NEt 2）3，（ 甲基环戊二烯基）Ti（NMeEt）3，（乙基环戊二烯基）Ti（NMeEt）3和（甲基环戊二烯基）Ti（OMe）3; 和除了至少一种前体之外的至少一种液化辅因子; 其中所述至少一种液化辅助因子以足以与所述至少一种前体共同作用的量存在，并且与所述至少一种前体组合形成液体组合物。

公开(公告)号：US20100256406A1

公开(公告)日：2010-10-07

申请号：US12670022

申请日：2008-07-24

Applicant: Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag

Inventor： Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag

IPC: C07F15/00 ,  C07F15/02

CPC classification number: C23C16/45525 ,  C07F17/02 ,  C23C16/16 ,  C23C16/18

Abstract: An organometallic precursor is provided. The precursor corresponds in structure to Formula (I): Cp(R)nM(CO)2(X), wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Abstract translation: 提供有机金属前体。 前体在结构上对应于式（I）：Cp（R）nM（CO）2（X）），其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为1,2,3,4或5.前体可用于化学相沉积工艺，例如原子层沉积（ALD）和化学气相沉积（CVD）。