公开(公告)号：US20120316378A1

公开(公告)日：2012-12-13

申请号：US13519811

申请日：2010-08-05

Applicant: Kota Torikai ,  Satoru Yamada

Inventor： Kota Torikai ,  Satoru Yamada

IPC: H01J3/22 ,  A61N5/10 ,  H01J3/20

CPC classification number: G21K1/093 ,  A61N5/1043 ,  A61N5/1077 ,  A61N2005/1087 ,  A61N2005/1095

Abstract: The beam irradiation apparatus is featured by including a transport pipe which is vacuum-evacuated to be used as a transport channel of a beam taken out from an accelerator, a quadrupole magnet which modulates the beam diameter of the beam so that the beam is incident on an irradiation target existing in the atmosphere while maintaining the focusing angle of the beam, and one or more longitudinally movable range shifters which are provided to be capable of changing the distance to the irradiation target of the beam, and which modulate the beam range by reducing the energy of the beam by allowing the beam to pass through the movable range shifter, and is featured in that the beam is irradiated onto the irradiation target by modulating the beam diameter and the beam range.

Abstract translation: 光束照射装置的特征在于包括真空抽真空的输送管，用作从加速器取出的光束的输送通道，四极磁体，其调制光束的光束直径以使光束入射到 存在于大气中的照射目标，同时保持光束的聚焦角度;以及一个或多个纵向移动范围移动器，其被设置为能够改变到光束的照射目标的距离，并且通过减小来调制光束范围 通过允许光束通过可移动范围移位器的光束的能量，其特征在于通过调制光束直径和光束范围将光束照射到照射目标上。

公开(公告)号：US20120273086A1

公开(公告)日：2012-11-01

申请号：US13455388

申请日：2012-04-25

Applicant: Kazunori WATANABE ,  Satoru YAMADA

Inventor： Kazunori WATANABE ,  Satoru YAMADA

IPC: D03D15/08 ,  F27B9/28

CPC classification number: D03D27/18 ,  D02G3/42 ,  D03D15/00 ,  D03D15/04 ,  D03D15/08 ,  D10B2331/04 ,  D10B2505/08 ,  D10B2505/12

Abstract: A fabric, a fabric manufacturing method and a vehicle seat are provided. The fabric has one surface and an opposite surface, and includes a constituent yarn having at least an elastic yarn; and a chenille yarn having a core yarn and a pile yarn. At least one kind of yarn of the constituent yarn is shaped in a waveform as seen from a sectional direction of the fabric. The core yarn is located closer to the opposite surface than an imaginary line, the imaginary line being formed by connecting each of peaks of mountain portions of the waveform in the one surface.

Abstract translation: 提供织物，织物制造方法和车辆座椅。 织物具有一个表面和相对的表面，并且包括至少具有弹性纱线的构成纱线; 以及具有芯纱和绒头纱的雪尼尔纱线。 构成纱线的至少一种纱线从织物的截面方向观察时的波形成形。 芯线位于比假想线更靠近相反表面的位置，假想线通过将波形的山脉部分的每一峰连接在一个表面上而形成。

公开(公告)号：US20120268232A1

公开(公告)日：2012-10-25

申请号：US13449976

申请日：2012-04-18

Applicant: Satoru YAMADA ,  Yoshiyuki HATAYAMA

Inventor： Satoru YAMADA ,  Yoshiyuki HATAYAMA

IPC: H01F27/29 ,  H01F41/06

CPC classification number: H01F27/29 ,  H01F27/2823 ,  H01F41/064 ,  H01F41/071 ,  H01F2017/048

Abstract: A coil component includes an air-core winding wire portion wound by a wire with a plurality of wound layers by alignment winding, a spiral shaped wound portion in which the wire wound in a spiral shape from an inner edge of an end surface toward an outer edge thereof along the end surface while in contact with the end surface on one side in the axis direction of the winding wire portion, a first lead portion extended and extracted outward from a winding first end point of the spiral shaped wound portion, and a second lead portion extended and extracted outward from a winding second end point at the outer circumference of the winding wire portion.

Abstract translation: 线圈部件包括由具有通过对准绕组的多个卷绕层的线缠绕的空心绕组线，螺旋形缠绕部分，其中线从端表面的内边缘向外部缠绕成螺旋形状 其沿着所述端面与所述绕线部的轴线方向的一侧的端面接触，从所述螺旋状卷绕部的卷绕的第一端部向外延伸并向外伸出的第一引导部， 引线部分从卷绕线部分的外周上的绕组第二端点向外延伸和提取。

公开(公告)号：US20120142160A1

公开(公告)日：2012-06-07

申请号：US13216706

申请日：2011-08-24

Applicant: Seung-Uk Han ,  Nam-Ho Jeon ,  Satoru Yamada ,  Young-Jin Choi

Inventor： Seung-Uk Han ,  Nam-Ho Jeon ,  Satoru Yamada ,  Young-Jin Choi

IPC: H01L21/02 ,  H01L21/28

CPC classification number: H01L27/10894 ,  H01L21/28176 ,  H01L21/3003 ,  H01L27/10808 ,  H01L27/10852

Abstract: A method of fabricating a semiconductor device is disclosed, the method generally including the steps of: forming a gate dielectric layer on a semiconductor substrate;forming a gate electrode on the gate dielectric layer;forming an etch stop layer on the gate electrode;forming a capacitor on the semiconductor substrate adjacent to the gate electrode;after forming the capacitor, forming a contact hole passing through the etch stop layer on the gate electrode;and, diffusing deuterium into the gate dielectric layer through the contact hole.

Abstract translation: 公开了一种制造半导体器件的方法，所述方法通常包括以下步骤：在半导体衬底上形成栅极电介质层;在栅极电介质层上形成栅电极;在栅电极上形成蚀刻停止层; 在形成电容器之后形成穿过栅电极上的蚀刻停止层的接触孔;以及通过接触孔将氘扩散到栅介质层中。

公开(公告)号：US20120049256A1

公开(公告)日：2012-03-01

申请号：US13180822

申请日：2011-07-12

Applicant: Jun-Hee Lim ,  Satoru Yamada ,  Sung-Duk Hong

Inventor： Jun-Hee Lim ,  Satoru Yamada ,  Sung-Duk Hong

IPC: H01L27/108 ,  H01L27/088

CPC classification number: H01L27/10894 ,  H01L21/76264 ,  H01L21/823481

Abstract: A semiconductor device includes a buried well, first and second active regions, an isolation layer, and a low resistance region. The buried well is disposed on a substrate and has impurity ions of a first conductivity type. The first and second active regions are disposed on the buried well and each have impurity ions of a second conductivity type, which is different from the first conductivity type. The isolation layer is disposed between the first and second active regions. The low resistance region is disposed between the isolation layer and the substrate and has impurity ions of the second conductivity type. The concentration of impurity ions in the low resistance region is greater than the concentration of the impurity ions in each of the first and second active regions.

Abstract translation: 半导体器件包括掩埋阱，第一和第二有源区，隔离层和低电阻区域。 掩埋阱设置在基板上并具有第一导电类型的杂质离子。 第一和第二有源区域设置在掩埋阱上，并且每个具有与第一导电类型不同的第二导电类型的杂质离子。 隔离层设置在第一和第二有源区之间。 低电阻区域设置在隔离层和衬底之间，并且具有第二导电类型的杂质离子。 低电阻区域中的杂质离子的浓度大于第一和第二活性区域中的每一个中的杂质离子的浓度。

公开(公告)号：US20110284422A1

公开(公告)日：2011-11-24

申请号：US13137197

申请日：2011-07-27

Applicant: Satoru Yamada

Inventor： Satoru Yamada

IPC: B65D85/00

CPC classification number: G11B33/128 ,  G11B15/6885

Abstract: In a mounting device for disk drive, two HDDs are retained in an outer case that forms the mounting device, and an inner case with guiding grooves each including an oblique groove and a parallel groove formed thereon is provided. When the inner case is extracted, the HDD on the front side is caused to ascend in the vertical direction to a position where the HDD on the front side does not obstruct the extraction of the HDD on the back side.

Abstract translation: 在用于盘驱动器的安装装置中，设置有两个HDD保持在形成安装装置的外壳中，并且提供具有各自包括形成在其上的倾斜槽和平行槽的引导槽的内壳。 当提取内壳时，使前侧的HDD在垂直方向上升到前侧的HDD不妨碍背面的HDD的提取的位置。

公开(公告)号：US20110260821A1

公开(公告)日：2011-10-27

申请号：US13093299

申请日：2011-04-25

Applicant: Satoru YAMADA ,  Yoshiyuki Hatayama

Inventor： Satoru YAMADA ,  Yoshiyuki Hatayama

IPC: H01F27/29

CPC classification number: H01F27/29 ,  H01F17/04 ,  H01F27/292 ,  H01F41/10 ,  H01F2017/048 ,  Y10T29/49071 ,  Y10T29/49073

Abstract: A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part of the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core.

Abstract translation: 线圈部件包括由磁性材料形成的芯部，嵌入在芯部中的线圈，从芯部的侧表面突出的线圈的端子部分的一部分，以及从侧面突出的部分 并且部分地与线圈的端子部分的突出部分连接。 线圈的端子部分的突出部分和平板状端子的突出部分分别沿着芯的侧表面朝向芯的底表面侧弯曲，并且线圈的端子部分的突出和弯曲部分 布置在板状端子的突出部分和弯曲部分之间。

公开(公告)号：US20110241099A1

公开(公告)日：2011-10-06

申请号：US13038117

申请日：2011-03-01

Applicant: Woo-Song Ahn ,  Satoru Yamada ,  Young-Jin Choi ,  Seung-Uk Han ,  Kyo-Suk Chae

Inventor： Woo-Song Ahn ,  Satoru Yamada ,  Young-Jin Choi ,  Seung-Uk Han ,  Kyo-Suk Chae

IPC: H01L29/792 ,  H01L23/525

CPC classification number: H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L23/5256 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/11526 ,  H01L27/11573 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, a first node impurity region, a second node impurity region, a third node impurity region, and an insulating layer. The first through third node impurity regions are disposed in the semiconductor substrate. Each of the first through third node impurity regions has a longitudinal length, a transverse length and a thickness respectively corresponding to first through third directions, which are perpendicular with respect to each other. The first node impurity region is parallel to the second and third node impurity regions, which are disposed in the substantially same line. The insulating layer is located between the first through third node impurity regions in the semiconductor substrate.

Abstract translation: 公开了一种半导体器件。 半导体器件包括半导体衬底，第一晶体杂质区，第二晶体杂质区，第三晶体杂质区和绝缘层。 第一至第三晶体杂质区设置在半导体衬底中。 第一至第三节点杂质区域中的每一个具有分别相对于彼此垂直的第一至第三方向的纵向长度，横向长度和厚度。 第一节点杂质区域平行于第二和第三节点杂质区域，其被布置在基本相同的线上。 绝缘层位于半导体衬底中的第一至第三结点杂质区之间。

公开(公告)号：US07936021B2

公开(公告)日：2011-05-03

申请号：US11976252

申请日：2007-10-23

Applicant: Chang-Hoon Jeon ,  Satoru Yamada ,  Sang-Yeon Han ,  Jong-Man Park ,  Si-Ok Sohn

Inventor： Chang-Hoon Jeon ,  Satoru Yamada ,  Sang-Yeon Han ,  Jong-Man Park ,  Si-Ok Sohn

IPC: H01L29/78 ,  H01L21/336 ,  H01L27/108

CPC classification number: H01L29/7851 ,  H01L29/41791 ,  H01L29/66795 ,  H01L2029/7858

Abstract: In a fin field effect transistor (Fin FET) and a method of manufacturing the Fin FET, the Fin FET includes an active pattern inside which insulating layer patterns are formed, an isolation layer pattern enclosing a sidewall of the active pattern such that an opening exposing a sidewall of the active pattern located between the insulating layer patterns is formed, a gate electrode formed on the active pattern to fill the opening, impurity regions formed at portions of the active pattern adjacent to sidewalls of the gate electrode, an insulating interlayer covering the active pattern and the gate electrode and contact plugs formed through portions of the insulating interlayer and the active pattern adjacent to the sidewalls of the gate electrode such that the contact plug makes contact with the impurity region.

Abstract translation: 在翅片场效应晶体管（Fin FET）和制造Fin FET的方法中，Fin FET包括其中形成绝缘层图案的有源图案，包围有源图案的侧壁的隔离层图案，使得开口露出 形成位于绝缘层图案之间的有源图案的侧壁，形成在有源图案上以填充开口的栅电极，形成在与栅电极的侧壁相邻的有源图案的部分处的杂质区，覆盖 有源图案和通过绝缘夹层的一部分和与栅电极的侧壁相邻的有源图案形成的栅电极和接触插塞，使得接触插塞与杂质区接触。

公开(公告)号：US20110085309A1

公开(公告)日：2011-04-14

申请号：US12900390

申请日：2010-10-07

Applicant: SATORU YAMADA

Inventor： SATORU YAMADA

IPC: H05K7/02

CPC classification number: G11B33/128 ,  G11B33/122 ,  G11B33/126

Abstract: An electronic device includes a housing having an accommodation space, a first support body being slidably insertable into the accommodation space in parallel with a predetermined plane, a second support body coupled with the first support body rotatably around a rotation axis parallel to a front side of the housing and being rotatable between a reference attitude disposed in the same plane with respect to the first support body and an inclined attitude disposed at a given angle with respect to the first support body, and a drive mechanism for changing the attitude of the second support body.

Abstract translation: 电子设备包括具有容纳空间的壳体，与预定平面平行地可滑动地插入到容纳空间中的第一支撑体;与第一支撑体可旋转地围绕平行于预定平面的旋转轴线可旋转地连接的第二支撑体 所述壳体能够相对于所述第一支撑体设置在同一平面中的基准姿态和相对于所述第一支撑体以给定角度设置的倾斜姿态之间旋转;以及驱动机构，用于改变所述第二支撑件的姿态 身体。