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公开(公告)号：US4134125A
公开(公告)日：1979-01-09
申请号：US817175
申请日：1977-07-20
IPC分类号： H01L21/205 , H01L21/314 , H01L21/56 , H01L23/29 , H01L29/04
CPC分类号： H01L23/298 , H01L21/02532 , H01L21/0262 , H01L21/314 , H01L21/56 , H01L23/291 , H01L2924/0002 , H01L2924/3011
摘要： Disclosed is a method and structure for protecting circuit components from the ambient and in particular for protecting the contact metal from the adverse effects of moisture. A first layer of amorphous silicon is deposited over the circuit including the metal contacts. A second layer which may be silicon nitride or silicon dioxide is then deposited over the amorphous silicon. The amorphous silicon layer reduces cracking in the second layer and prevents cracks in the second layer from propagating to the circuit components.
摘要翻译： 公开了一种用于保护电路组件免受环境影响的方法和结构，特别是用于保护接触金属免受湿气的不利影响。 在包括金属触点的电路上沉积第一层非晶硅。 然后将可能是氮化硅或二氧化硅的第二层沉积在非晶硅上。 非晶硅层减少第二层中的裂纹，并防止第二层中的裂纹传播到电路部件。
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公开(公告)号：US07019386B2
公开(公告)日：2006-03-28
申请号：US10832515
申请日：2004-04-27
申请人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka
发明人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka
IPC分类号： H01L23/58
CPC分类号： C09D183/06 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Semiconductor devices employing siloxane epoxy polymers as low-κ dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C. making them particularly attractive for use in the semiconductor industry
摘要翻译： 公开了使用硅氧烷环氧聚合物作为低k电介质膜的半导体器件。 这些器件包括半导体衬底，一个或多个金属层或结构以及一个或多个介电膜，其中器件中的至少一个电介质膜是硅氧烷环氧聚合物。 硅氧烷环氧聚合物的使用部分是有利的，因为聚合物很好地粘附到金属上并具有低至1.8的介电常数。 因此，所公开的半导体器件比使用常规电介质材料制造的器件提供更好的性能。 此外，硅氧烷环氧聚合物电介质在低温下是完全可固化的，表现出低的漏电流，并且在高于400℃的温度下保持稳定，使得它们在半导体工业中特别有吸引力
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公开(公告)号：US06319387B1
公开(公告)日：2001-11-20
申请号：US09386772
申请日：1999-08-31
IPC分类号： C25D358
CPC分类号： H01L21/76846 , C25D3/58 , C25D5/18 , C25D7/12 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L21/76877 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.
摘要翻译： 阐述了一种用于微电子电路的金属化结构。 金属化结构包括电介质层，设置在电介质层外部的超薄膜结合层和设置在超薄膜结合层外部的低Me浓度的铜-Me合金层。 Me是铜以外的金属，优选为锌。 Me的浓度小于约5原子％，优选小于约2原子％，甚至更优选小于约1原子％。 在金属化结构的优选实施例中，电介质层，超薄膜结合层和铜-Me合金层都彼此紧邻地设置。 如果需要，可以在上述层序列的外部形成诸如铜膜的主导体。 本发明还考虑了用于形成上述结构的方法以及可用于沉积铜-Me合金层的电镀浴。
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14.发明授权Systems for performing chemical mechanical planarization and process for conducting same 失效用于执行化学机械平面化的系统和用于进行其的处理
公开(公告)号：US5637185A
公开(公告)日：1997-06-10
申请号：US413487
申请日：1995-03-30
IPC分类号： B24B37/005 , B24B49/02 , B24B1/00 , B24B37/00
CPC分类号： B24B37/005 , B24B49/02
摘要： A system for performing chemical mechanical planarization for a semiconductor wafer includes a chemical mechanical polishing system including a chemical mechanical polishing slurry. The system also includes a device for measuring the electrochemical potential of the slurry during processing which is electrically connected to the slurry, and a device for detecting the end point of the process, based upon the electrochemical potential of the slurry, which is responsive to the electrochemical potential measuring device. Accurate in situ control of a chemical mechanical polishing process is thereby provided.
摘要翻译： 用于对半导体晶片执行化学机械平面化的系统包括包括化学机械抛光浆料的化学机械抛光系统。 该系统还包括一种用于在处理期间测量浆料的电化学电位的装置，其与浆料电连接，以及用于基于浆料的电化学电位检测该工艺的终点的装置，其响应于 电化学电位测量装置。 从而提供了化学机械抛光工艺的准确原位控制。
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公开(公告)号：US4522842A
公开(公告)日：1985-06-11
申请号：US416290
申请日：1982-09-09
摘要： It has been found that stress in X-ray transparent films used to form masks for X-ray lithography also cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. A method is disclosed which anneals boron nitride films for use in X-ray masks in such a way as to control stress.
摘要翻译： 已经发现，用于形成用于X射线光刻的掩模的X射线透明膜中的应力也引起膜上形成的高分辨率X射线吸收图案的变形。 公开了一种以控制应力的方式退火用于X射线掩模的氮化硼膜的方法。
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公开(公告)号：US4149905A
公开(公告)日：1979-04-17
申请号：US864379
申请日：1977-12-27
IPC分类号： H01L21/02 , H01L21/306 , H01L21/316 , H01L21/322
CPC分类号： H01L21/02054 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02312 , H01L21/31662 , Y10S148/024
摘要： Many of the stacking faults which occur after oxidation of silicon wafers are substantially eliminated by the use of an argon-hydrochloric anneal of the wafers just prior to oxidation. This anneal, which is carried out in the same chamber in which oxidation is carried out, removes impurities from the surface of the wafers and thereby limits the sites at which stacking faults form after oxidation.
摘要翻译： 在硅晶片的氧化之后发生的许多层叠缺陷通过在氧化之前使用晶片的氩 - 盐酸退火基本上消除。 在进行氧化的同一室中进行的退火从晶片的表面去除杂质，从而限制了在氧化后形成堆垛层错的位置。
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17.发明授权Siloxane epoxy polymers as metal diffusion barriers to reduce electromigration 有权硅氧烷环氧聚合物作为金属扩散阻隔层以减少电迁移公开(公告)号：US07285842B2
公开(公告)日：2007-10-23
申请号：US10832844
申请日：2004-04-27
申请人： Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka , Ramkrishna Ghoshal
发明人： Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka , Ramkrishna Ghoshal
IPC分类号： H01L23/58 , H01L23/485
CPC分类号： H01L21/76834 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76832
摘要： Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.
摘要翻译： 公开了使用硅氧烷环氧聚合物作为邻近导电金属层的扩散阻挡层的结构。 硅氧烷环氧聚合物对诸如铜的导电金属表现出优异的粘附性，并且提供了金属线的电迁移寿命。 此外，硅氧烷环氧聚合物的介电常数小于3，因此提供比常规扩散阻挡层更好的性能。
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18.发明授权Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：US4332839A
公开(公告)日：1982-06-01
申请号：US227133
申请日：1981-01-22
IPC分类号： H01L21/28 , H01L21/768 , H01L23/532 , H01L29/49 , H01L21/283
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/76889 , H01L29/4933 , H01L2924/0002 , Y10S148/02 , Y10S148/147
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译： 已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。 通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。
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