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公开(公告)号：US4276557A
公开(公告)日：1981-06-30
申请号：US974378
申请日：1978-12-29
IPC分类号： H01B1/00 , H01B1/06 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L29/49 , H01L23/48
CPC分类号： H01L21/28052 , H01L21/32055 , H01L21/76889 , H01L23/53271 , H01L29/4933 , H01L2924/0002 , Y10S148/14
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译： 已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。 通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。
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2.再颁专利Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：USRE32207E
公开(公告)日：1986-07-15
申请号：US429299
申请日：1982-09-30
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L29/49
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/32055 , H01L21/76889 , H01L29/4933 , H01L2924/0002
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
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3.发明授权Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：US4332839A
公开(公告)日：1982-06-01
申请号：US227133
申请日：1981-01-22
IPC分类号： H01L21/28 , H01L21/768 , H01L23/532 , H01L29/49 , H01L21/283
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/76889 , H01L29/4933 , H01L2924/0002 , Y10S148/02 , Y10S148/147
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译： 已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。 通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。
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公开(公告)号：US4378628A
公开(公告)日：1983-04-05
申请号：US296914
申请日：1981-08-27
IPC分类号： H01L29/78 , H01L21/28 , H01L21/285 , H01L21/336
CPC分类号： H01L29/66575 , H01L21/28097 , H01L21/28518
摘要： In order to form MOSFET structures, a cobalt layer (16) is deposited and sintered, at about 400.degree. C. to 500.degree. C., on a patterned semiconductor wafer having exposed polycrystalline (14) or monocrystalline (11) silicon portions, as well as exposed oxide (15 or 25) portions. The cobalt reacts with exposed surfaces of the silicon portions and forms thereat such compounds as cobalt monosilicide (CoSi) or di-cobalt silicide (C0.sub.2 Si), or a mixture of both. The unreacted cobalt is selectively removed, as by selective etching in a suitable acid bath. A heat treatment at about 700.degree. C. or more, preferably in an oxidizing ambient which contains typically about 2 percent oxygen, converts the cobalt compound(s) into relatively stable cobalt disilicide (CoSi.sub.2). Subsequently, deposition of an in situ doped layer (33) of polycrystalline silicon (polysilicon) on the cobalt disilicide contacting the monocrystalline silicon portions--followed by gettering, deposition of a layer (34) of aluminum, and standard etch-patterning of the aluminum and polysilicon layers--completes the metallization of the desired MOSFET structures on the silicon wafer.
摘要翻译： 为了形成MOSFET结构，在具有暴露的多晶（14）或单晶（11）硅部分的图案化半导体晶片上，在约400℃至500℃下沉积并烧结钴层（16），如 以及暴露的氧化物（15或25）部分。 钴与硅部分的暴露表面反应并在其上形成诸如一硅化钴（CoSi）或二钴硅化物（CO 2 Si）或两者的混合物的化合物。 选择性地除去未反应的钴，如通过在合适的酸浴中的选择性蚀刻。 约700℃或更高，优选氧化环境中通常含有约2％氧气的热处理将钴化合物转化成相对稳定的二硅化钴（CoSi 2）。 随后，将多晶硅（多晶硅）的原位掺杂层（33）沉积在与单晶硅部分接触的二硅化钴上，然后吸杂，沉积铝层（34），并且对铝进行标准蚀刻图案化 和多晶硅层 - 完成硅晶片上期望的MOSFET结构的金属化。
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公开(公告)号：US4522842A
公开(公告)日：1985-06-11
申请号：US416290
申请日：1982-09-09
摘要： It has been found that stress in X-ray transparent films used to form masks for X-ray lithography also cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. A method is disclosed which anneals boron nitride films for use in X-ray masks in such a way as to control stress.
摘要翻译： 已经发现，用于形成用于X射线光刻的掩模的X射线透明膜中的应力也引起膜上形成的高分辨率X射线吸收图案的变形。 公开了一种以控制应力的方式退火用于X射线掩模的氮化硼膜的方法。
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公开(公告)号：US4149905A
公开(公告)日：1979-04-17
申请号：US864379
申请日：1977-12-27
IPC分类号： H01L21/02 , H01L21/306 , H01L21/316 , H01L21/322
CPC分类号： H01L21/02054 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02312 , H01L21/31662 , Y10S148/024
摘要： Many of the stacking faults which occur after oxidation of silicon wafers are substantially eliminated by the use of an argon-hydrochloric anneal of the wafers just prior to oxidation. This anneal, which is carried out in the same chamber in which oxidation is carried out, removes impurities from the surface of the wafers and thereby limits the sites at which stacking faults form after oxidation.
摘要翻译： 在硅晶片的氧化之后发生的许多层叠缺陷通过在氧化之前使用晶片的氩 - 盐酸退火基本上消除。 在进行氧化的同一室中进行的退火从晶片的表面去除杂质，从而限制了在氧化后形成堆垛层错的位置。
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公开(公告)号：US4134125A
公开(公告)日：1979-01-09
申请号：US817175
申请日：1977-07-20
IPC分类号： H01L21/205 , H01L21/314 , H01L21/56 , H01L23/29 , H01L29/04
CPC分类号： H01L23/298 , H01L21/02532 , H01L21/0262 , H01L21/314 , H01L21/56 , H01L23/291 , H01L2924/0002 , H01L2924/3011
摘要： Disclosed is a method and structure for protecting circuit components from the ambient and in particular for protecting the contact metal from the adverse effects of moisture. A first layer of amorphous silicon is deposited over the circuit including the metal contacts. A second layer which may be silicon nitride or silicon dioxide is then deposited over the amorphous silicon. The amorphous silicon layer reduces cracking in the second layer and prevents cracks in the second layer from propagating to the circuit components.
摘要翻译： 公开了一种用于保护电路组件免受环境影响的方法和结构，特别是用于保护接触金属免受湿气的不利影响。 在包括金属触点的电路上沉积第一层非晶硅。 然后将可能是氮化硅或二氧化硅的第二层沉积在非晶硅上。 非晶硅层减少第二层中的裂纹，并防止第二层中的裂纹传播到电路部件。
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公开(公告)号：USRE30244E
公开(公告)日：1980-04-01
申请号：US946843
申请日：1978-09-28
申请人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
发明人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
IPC分类号： C23C16/509
CPC分类号： C23C16/5096
摘要： An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.
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9.发明授权Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures 失效用于半导体集成电路结构中的两层互连金属化的多重绝缘层
公开(公告)号：US4985373A
公开(公告)日：1991-01-15
申请号：US357647
申请日：1989-05-24
IPC分类号： H01L21/316 , H01L23/532
CPC分类号： H01L21/02129 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31625 , H01L23/5329 , H01L2924/0002
摘要： Insulation between first and second levels of aluminum metallization in semiconductor integrated circuit structures comprises a plasma planarized, deposited silicon dioxide layer and another silicon dioxide layer deposited upon said plasma planarized layer.
摘要翻译： 在半导体集成电路结构中的第一和第二级铝金属化之间的绝缘包括沉积在所述等离子体平坦化层上的等离子体平坦化沉积二氧化硅层和另一二氧化硅层。
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公开(公告)号：US4171489A
公开(公告)日：1979-10-16
申请号：US941776
申请日：1978-09-13
IPC分类号： G03F1/22 , G21K5/02 , H01L21/027 , H01L21/30 , G21F3/02
CPC分类号： G03F1/22
摘要： The discovery that boron nitride and boron carbide films can be made in tension allows nondistorting radiation windows or masks to be realized. Both low and high pressure techniques for making the tensile films lead to related mask structures utilizing such films. The resulting structures are sufficiently distortion free to be useful for x-ray lithography.
摘要翻译： {PG，1]发现氮化硼和碳化硼薄膜可以制成张力，可以实现非调质辐射窗口或掩模。 用于制造拉伸膜的低压和高压技术都导致利用这种膜的相关掩模结构。 所得到的结构具有足够的变形，可用于x射线光刻。
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