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    Fan-out unit and thin-film transistor array substrate having the same
    11.
    发明授权
    Fan-out unit and thin-film transistor array substrate having the same 有权
    扇出单元和薄膜晶体管阵列基板

    公开(公告)号：US08222644B2

    公开(公告)日：2012-07-17

    申请号：US12637658

    申请日：2009-12-14

    Applicant: Sung-Hoon Yang ,  So-Woon Kim ,  Yeon-Ju Kim ,  So-Hyun Lee ,  Kwang-Hoon Lee ,  Mun-Soo Park ,  Jung-Hyeon Kim

    Inventor： Sung-Hoon Yang ,  So-Woon Kim ,  Yeon-Ju Kim ,  So-Hyun Lee ,  Kwang-Hoon Lee ,  Mun-Soo Park ,  Jung-Hyeon Kim

    IPC: H01L29/15 ,  G02F1/1345

    CPC classification number: G02F1/1345 ,  H01L27/124 ,  H05K1/0265 ,  H05K1/167 ,  H05K2201/0784 ,  H05K2201/09263

    Abstract: A fan-out unit which can control a resistance difference among channels with efficient space utilization and a thin-film transistor (TFT) array substrate having the fan-out unit are presented. The fan-out unit includes: an insulating substrate; a first wiring layer which is formed on the insulating substrate and connected to a pad; a second wiring layer which is formed on the insulating substrate and connected to a TFT; and a resistance controller which is connected between the first wiring layer and the second wiring layer and includes a plurality of first resistors extending parallel to the first wiring layer and a plurality of second resistors extending perpendicular to the first resistors and alternately connecting to the first resistors, wherein the first resistors are longer than the second resistors.

    Abstract translation: 提出了一种能够控制具有高效空间利用的通道之间的电阻差的扇出单元和具有扇出单元的薄膜晶体管（TFT）阵列基板。 扇出单元包括：绝缘基板; 第一布线层，其形成在所述绝缘基板上并连接到焊盘; 第二布线层，其形成在绝缘基板上并连接到TFT; 以及电阻控制器，其连接在第一布线层和第二布线层之间，并且包括平行于第一布线层延伸的多个第一电阻器和垂直于第一电阻器延伸的多个第二电阻器，并交替地连接到第一电阻器 ，其中所述第一电阻器比所述第二电阻器长。

    Thin-film transistor, substrate and display device each having the thin-film transistor, and method of manufacturing the thin-film transistor
    12.
    发明授权
    Thin-film transistor, substrate and display device each having the thin-film transistor, and method of manufacturing the thin-film transistor 有权
    薄膜晶体管，各自具有薄膜晶体管的基板和显示装置以及制造薄膜晶体管的方法

    公开(公告)号：US08189131B2

    公开(公告)日：2012-05-29

    申请号：US12188956

    申请日：2008-08-08

    Applicant: Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

    Inventor： Kap-Soo Yoon ,  Sung-Hoon Yang ,  Sung-Ryul Kim ,  Hwa-Yeul Oh ,  Jae-Ho Choi ,  Yong-Mo Choi

    IPC: G02F1/136

    CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/778 ,  H01L29/78687

    Abstract: A thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The semiconductor pattern includes an active layer being overlapped with the gate electrode and a low band gap portion having a lower energy band gap than the active layer. The source and drain electrodes are spaced apart from each other to be overlapped with the semiconductor pattern. Therefore, the semiconductor pattern includes a low band gap portion having a lower energy band gap than the active layer, so that electron mobility may be increased in a channel formed along the low band gap portion so that electric characteristics of the TFT may be enhanced.

    Abstract translation: 薄膜晶体管（TFT）包括栅电极，半导体图案，源电极和漏电极。 半导体图案包括与栅电极重叠的有源层和具有比有源层更低的能带隙的低带隙部分。 源极和漏极彼此间隔开以与半导体图案重叠。 因此，半导体图案包括具有比有源层低的能带隙的低带隙部分，使得沿着低带隙部分形成的沟道中的电子迁移率可能增加，从而可以提高TFT的电特性。

    Display device and manufacturing method thereof
    13.
    发明授权
    Display device and manufacturing method thereof 有权
    显示装置及其制造方法

    公开(公告)号：US08174015B2

    公开(公告)日：2012-05-08

    申请号：US12761958

    申请日：2010-04-16

    Applicant: Ki-Hun Jeong ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Sang-Youn Han ,  Woong-Kwon Kim ,  Sung-Hoon Yang ,  Suk Won Jung ,  Dae-Cheol Kim ,  Kyung-Sook Jeon ,  Seung Mi Seo

    Inventor： Ki-Hun Jeong ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Sang-Youn Han ,  Woong-Kwon Kim ,  Sung-Hoon Yang ,  Suk Won Jung ,  Dae-Cheol Kim ,  Kyung-Sook Jeon ,  Seung Mi Seo

    IPC: H01L29/04

    CPC classification number: G06F3/0421 ,  G06F3/0412 ,  H01L27/1251 ,  H01L27/323

    Abstract: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.

    Abstract translation: 显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。 读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。 感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极 以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
    14.
    发明申请
    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    传感器阵列基板及其制造方法

    公开(公告)号：US20120025189A1

    公开(公告)日：2012-02-02

    申请号：US13102824

    申请日：2011-05-06

    Applicant: Kyung-Sook JEON ,  Jun-Ho SONG ,  Sang-Youn HAN ,  Sung-Hoon YANG ,  Dae-Cheol KIM ,  Ki-Hun JEONG ,  Mi-Seon SEO

    Inventor： Kyung-Sook JEON ,  Jun-Ho SONG ,  Sang-Youn HAN ,  Sung-Hoon YANG ,  Dae-Cheol KIM ,  Ki-Hun JEONG ,  Mi-Seon SEO

    IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0216

    CPC classification number: H01L27/1446 ,  H01L27/14683

    Abstract: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

    Abstract translation: 提供传感器阵列基板及其制造方法。 传感器阵列基板包括：限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极，其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层，其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案，其中所述第一半导体层和所述第二半导体层设置在不同的层上，并且所述第二栅电极和所述遮光图案是电 相互连接。

    Thin-film transistor display panel and method of fabricating the same
    15.
    发明授权
    Thin-film transistor display panel and method of fabricating the same 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号：US08022411B2

    公开(公告)日：2011-09-20

    申请号：US12499009

    申请日：2009-07-07

    Applicant: Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

    Inventor： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

    IPC: H01L51/52

    CPC classification number: H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/7869

    Abstract: Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

    Abstract translation: 提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性，以及制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

    DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME
    17.
    发明申请
    DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME 有权
    显示基板，其制造方法

    公开(公告)号：US20110147740A1

    公开(公告)日：2011-06-23

    申请号：US12977853

    申请日：2010-12-23

    Applicant: Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

    Inventor： Ki-Hun JEONG ,  Do-Hyun KIM ,  Dong-Hoon LEE ,  Kap-Soo YOON ,  Jae-Ho CHOI ,  Sung-Hoon YANG ,  Pil-Sang YUN ,  Seung-Mi SEO

    IPC: H01L29/786 ,  H01L21/336

    CPC classification number: H01L29/7869 ,  H01L29/78606 ,  H01L29/78633

    Abstract: The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.

    Abstract translation: 本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 保护层，设置在所述氧化物半导体层上并与所述氧化物半导体层的沟道区域重叠; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 与所述氧化物半导体层的第二面接触且与所述源电极相对的漏电极，所述沟道区域设置在所述漏电极和所述源电极之间; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

    PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE
    18.
    发明申请
    PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE 有权
    光电传感器，其制造方法，具有它们的彩色滤色器基板以及具有彩色滤光片基板的显示装置

    公开(公告)号：US20110090437A1

    公开(公告)日：2011-04-21

    申请号：US12898250

    申请日：2010-10-05

    Applicant: Kap-Soo YOON ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Kyung-Sook JEON ,  Seung-Mi SEO

    Inventor： Kap-Soo YOON ,  Sung-Hoon YANG ,  Ki-Hun JEONG ,  Kyung-Sook JEON ,  Seung-Mi SEO

    IPC: H01L31/0232 ,  H01L31/0352 ,  G02B5/23 ,  B82Y15/00

    CPC classification number: H01L27/1446 ,  B82Y15/00 ,  B82Y20/00 ,  G02B5/201 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.

    Abstract translation: 光子传感器包括第一电极层，第二电极层，第三电极层，第一光子吸收层，第二光子吸收层，第三光子吸收层和电荷阻挡层。 第一光子吸收层包括第一纳米颗粒的分散体，并且被配置为将第一有色光转换成相应的电荷。 第二光子吸收层包括第二纳米颗粒的分散体，并且被配置为根据光强度将第二有色光转换成相应的电荷。 第三光子吸收层包括第三纳米颗粒的分散体，并且被配置为根据光强度将第三有色光转换成相应的电荷。 电荷阻挡层形成在第一和第二光子吸收层之间以阻止第一和第二光子吸收层之间的电荷流动。

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