公开(公告)号：US20100247764A1

公开(公告)日：2010-09-30

申请号：US12679792

申请日：2008-10-22

申请人： Takanori Watanabe ,  Hideaki Iwamura ,  Koji Nishikawa

发明人： Takanori Watanabe ,  Hideaki Iwamura ,  Koji Nishikawa

IPC分类号： C23C16/00

CPC分类号： C23C8/08 ,  C22C14/00 ,  C22C21/003 ,  C23C8/06 ,  C23C8/80

摘要： There is provided a surface treatment method for improving high temperature resistance oxidizability of a Ti—Al alloy in a manner suitable for mass production and the Ti—Al alloy. A Ti—Al alloy base material containing 15 at % or more to 55 at % or less of Al is heated and held in a gas atmosphere containing a fluorine source gas to form a fluorine inspissation layer with a thickness of 0.1 μm or more to 10 μm or less on the surface of the Ti—Al alloy base material, and a maximum concentration of F in the fluorine inspissation layer is made to be 2 at % or more to 35 at % or less. Thereby, when exposed to a high temperature oxidizing atmosphere, the surface of the Ti—Al alloy base is coated with an Al2O3 coating film having extremely low oxygen permeability. The alloy hence has excellent insusceptibility to high temperature oxidation. Thus, the poor insusceptibility to high temperature oxidation, which is a most serious disadvantage of the Ti—Al alloy which is lightweight and has high temperature strength, can be improved in a manner suitable for mass production. Therefore, the alloy can be used suitably for a supercharger turbine wheel, an engine valve, turbine blades for a gas turbine or the like, for example.

摘要翻译： 提供了以适合批量生产的方式提高Ti-Al合金的耐高温氧化性和Ti-Al合金的表面处理方法。 将含有15原子％以上且55原子％以下的Al的Ti-Al合金基材加热保持在含有氟源气体的气体气氛中，形成厚度为0.1μm以上至10以下的氟吸附层 在Ti-Al合金基材的表面上为1μm以下，氟吸收层中的F的最大浓度为2at％以上至35at％以下。 由此，当暴露在高温氧化气氛中时，TiAl合金基体的表面涂覆有氧透过率极低的Al 2 O 3涂膜。 因此，该合金对高温氧化具有优异的不敏感性。 因此，能够以适合于批量生产的方式改善轻质且具有高温强度的Ti-Al合金的最严重缺点的高温氧化性差的难以理解。 因此，该合金可以适当地用于例如增压涡轮机轮，发动机气门，燃气轮机的涡轮叶片等。

公开(公告)号：US20100214464A1

公开(公告)日：2010-08-26

申请号：US12697408

申请日：2010-02-01

申请人： Takanori Watanabe

发明人： Takanori Watanabe

IPC分类号： H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14603

摘要： A solid-state imaging apparatus includes: an electric charge collecting region (104) of a first conductivity type arranged on a semiconductor substrate to collect an electric charge; a first surface region (105) of a second conductivity type formed on a surface of the semiconductor substrate to cover at least a part of the electric charge collecting region; a floating diffusion region (103) of the first conductivity type; and an electrode (102) covering a whole surface of the electric charge collecting region, for biasing through a gate insulating film to transfer the electric charge in the electric charge collecting region to the floating diffusion region, wherein the electrode has a film thickness effective to transmit light, and, under the electrode, arranged are a portion spaced from the floating diffusion region and including the first surface region, and a portion closer to the floating diffusion region and not including the first surface region.

摘要翻译： 一种固态成像装置，包括：布置在半导体基板上的用于收集电荷的第一导电类型的电荷收集区域（104） 形成在所述半导体衬底的表面上以覆盖所述电荷收集区域的至少一部分的第二导电类型的第一表面区域（105） 第一导电类型的浮动扩散区域（103）; 以及覆盖所述电荷收集区域的整个表面的电极（102），用于通过栅极绝缘膜偏置以将所述电荷收集区域中的电荷转移到所述浮动扩散区域，其中所述电极具有有效 透射光，并且在电极下面布置有与浮动扩散区间隔开并且包括第一表面区域的部分和更靠近浮动扩散区域并且不包括第一表面区域的部分。

公开(公告)号：US20090302382A1

公开(公告)日：2009-12-10

申请号：US12308057

申请日：2007-05-31

申请人： Alberto O. Adan ,  Mitsuhiro Kikuta ,  Akinobu Teramoto ,  Tadahiro Ohmi ,  Hiroo Yabe ,  Takanori Watanabe

发明人： Alberto O. Adan ,  Mitsuhiro Kikuta ,  Akinobu Teramoto ,  Tadahiro Ohmi ,  Hiroo Yabe ,  Takanori Watanabe

IPC分类号： H01L27/088 ,  H01L21/8238 ,  H01L29/78 ,  H01L21/336 ,  H01L27/092 ,  H01L21/8234

CPC分类号： H01L29/7813 ,  H01L21/823412 ,  H01L21/823456 ,  H01L21/823487 ,  H01L21/823807 ,  H01L21/82385 ,  H01L21/823885 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/4236 ,  H01L29/66734

摘要： In one embodiment of the present invention, a power IC device is disclosed containing a power MOS transistor with a low ON resistance and a surface channel MOS transistor with a high operation speed. There is also provided a method of manufacturing such a device. A chip has a surface of which the planar direction is not less than −8° and not more than +8° off a silicon crystal face. The p-channel trench power MOS transistor includes a trench formed vertically from the surface of the chip, a gate region in the trench, an inversion channel region on a side wall of the trench, a source region in a surface layer of the chip, and a drain region in a back surface layer of the chip. The surface channel MOS transistor has an inversion channel region fabricated so that an inversion channel current flows in a direction not less than −8° and not more than +8° off the silicon crystal direction.

摘要翻译： 在本发明的一个实施例中，公开了一种功率IC器件，其包含具有低导通电阻的功率MOS晶体管和具有高操作速度的表面沟道MOS晶体管。 还提供了制造这种装置的方法。 芯片的表面的平面方向不小于硅晶面的-8°且不大于+ 8°。 p沟道沟槽功率MOS晶体管包括从芯片的表面垂直形成的沟槽，沟槽中的栅极区域，沟槽的侧壁上的反转沟道区域，芯片的表面层中的源极区域， 以及芯片的背面层中的漏极区域。 表面沟道MOS晶体管具有制造的反向沟道区域，使得反向沟道电流在与硅晶体方向不同于-8°且不大于+ 8°的方向上流动。

公开(公告)号：US20080303930A1

公开(公告)日：2008-12-11

申请号：US12050326

申请日：2008-03-18

申请人： Yukihiro Kuroda ,  Takanori Watanabe

发明人： Yukihiro Kuroda ,  Takanori Watanabe

IPC分类号： H04N5/228

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14806 ,  H04N3/1506 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3741 ,  H04N5/37455

摘要： In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups.

摘要翻译： 在光电转换装置中，单位像素组布置在阱中，其中每个单位像素包括光电转换元件，放大器晶体管和转移晶体管。 光电转换装置包括用于向阱提供电压的线，用于将阱电压线连接到阱的阱接触部分和用于控制转移晶体管的转移控制线。 转移控制线在单位像素组的各个区域中相对于阱电压线对称地布置。

公开(公告)号：US20080277031A1

公开(公告)日：2008-11-13

申请号：US12216853

申请日：2008-07-11

申请人： Takanori Watanabe ,  Asahiro Sakata

发明人： Takanori Watanabe ,  Asahiro Sakata

IPC分类号： C23C8/32 ,  C22C38/00

CPC分类号： C23C8/04 ,  C23C8/32

摘要： A steel part according to the present invention is a part in which a surface of an austenitic stainless steel containing 3 to 20 mass % of Mn was carbonitrided to be hardened. By setting Vickers hardness of the surface to 1350 HV or more and setting a depth of a hardened layer having 1000 HV or more from the surface of the steel to 10 μm or more, when the part according to the present invention is applied to a part required for sliding and wear resistance particularly, the service life can be improved significantly. Further, since the manufacturing method is performed by only heating in a gas atmosphere, a large number of parts can be simultaneously treated. Thus the stainless steel parts of the present invention can be adopted to wide fields as stainless steel parts required for wear resistance.

摘要翻译： 根据本发明的钢部件是将含有3〜20质量％的Mn的奥氏体系不锈钢的表面碳氮共渗以进行硬化的部分。 通过将表面的维氏硬度设定为1350HV以上，将钢板表面的1000HV以上的硬化层的深度设定为10um以上，将本发明的部件应用于零件 特别要求滑动和耐磨性，可以显着提高使用寿命。 此外，由于仅通过在气体气氛中加热来进行制造方法，因此可以同时处理大量的部件。 因此，本发明的不锈钢部件可以作为耐磨性所需的不锈钢部件而被广泛使用。

公开(公告)号：US07375423B2

公开(公告)日：2008-05-20

申请号：US11183844

申请日：2005-07-19

申请人： Takanori Watanabe ,  Tsuyoshi Koyashiki ,  Hiroyuki Ozawa ,  Chiaki Mimura

发明人： Takanori Watanabe ,  Tsuyoshi Koyashiki ,  Hiroyuki Ozawa ,  Chiaki Mimura

IPC分类号： H01L23/52

CPC分类号： H01L24/06 ,  H01L23/5286 ,  H01L24/05 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/14 ,  H01L2924/00014

摘要： A semiconductor device includes a pad composed of plural wiring layers and a power supply ring to provide a power supply provided through the pad for the power supply to an internal circuit, and the pad for the power supply and the power supply ring are connected by vias provided respectively above and below the power supply ring. Consequently, even if the width of the pad is narrowed, the number of vias disposed to connect the pad for the power supply and the power supply ring can be at least doubled compared to the conventional one to increase the amount of a current which can be provided to the power supply ring, which makes it possible to provide the sufficient current from outside to the power supply ring even in the semiconductor device with the narrow-width pad.

摘要翻译： 半导体器件包括由多个布线层组成的焊盘和用于向内部电路提供通过焊盘提供的用于电源的电源的电源环，并且电源和电源环的焊盘通过通孔 分别设置在电源环的上下。 因此，即使焊盘的宽度变窄，与常规的焊盘相比，用于连接电源焊盘和电源环的通孔的数量可以至少翻倍，以增加可以 提供给电源环，这使得即使在具有窄宽度焊盘的半导体器件中也可以从外部向电源环提供足够的电流。

公开(公告)号：US07227206B2

公开(公告)日：2007-06-05

申请号：US10842443

申请日：2004-05-11

申请人： Takanori Watanabe

发明人： Takanori Watanabe

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/14609

摘要： A solid-state image sensor includes, in each pixel, a p-type well provided on a semiconductor substrate, a photodiode provided in the p-type well, a transfer gate for transferring photocharges accumulated in the photodiode, and an n-type diffusion region for receiving the transferred photocharges. The photodiode includes a first n-type accumulation region, and a second n-type accumulation region having a concentration higher than that of the first accumulation region and provided at a position deeper than the first accumulation region. The first accumulation region extends toward an end of the transfer gate, and the second accumulation region is separate from the transfer gate.

摘要翻译： 固态图像传感器在每个像素中包括设置在半导体衬底上的p型阱，设置在p型阱中的光电二极管，用于传送积聚在光电二极管中的光电荷的转移栅和n型扩散 用于接收转印的光电荷的区域。 光电二极管包括第一n型累积区域和具有比第一累积区域的浓度高的浓度的第二n型累积区域，并且设置在比第一累积区域更深的位置。 第一累积区域朝向传输栅极的端部延伸，并且第二堆积区域与传输栅极分离。

公开(公告)号：US20060279650A1

公开(公告)日：2006-12-14

申请号：US11446119

申请日：2006-06-05

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

IPC分类号： H04N5/335

CPC分类号： H04N5/3598 ,  H04N5/3595 ,  H04N5/374

摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

公开(公告)号：US20060048861A1

公开(公告)日：2006-03-09

申请号：US10529898

申请日：2003-10-06

申请人： Takanori Watanabe ,  Asahiro Sakata

发明人： Takanori Watanabe ,  Asahiro Sakata

IPC分类号： C22C38/44

CPC分类号： C23C8/04 ,  C23C8/32

摘要： A steel part according to the present invention is a part in which a surface of an austenitic stainless steel containing 3 to 20 mass % of Mn was carbonitrided to be hardened. By setting Vickers hardness of the surface to 1350 HV or more and setting a depth of a hardened layer having 1000 HV or more from the surface of the steel to 10 μm or more, when the part according to the present invention is applied to a part required for sliding and wear resistance particularly, the service life can be improved significantly. Further, since the manufacturing method is performed by only heating in a gas atmosphere, a large number of parts can be simultaneously treated. Thus the stainless steel parts of the present invention can be adopted to wide fields as stainless steel parts required for wear resistance.

摘要翻译： 根据本发明的钢部件是将含有3〜20质量％的Mn的奥氏体系不锈钢的表面碳氮共渗以进行硬化的部分。 通过将表面的维氏硬度设定为1350HV以上，将钢板表面的1000HV以上的硬化层的深度设定为10um以上，将本发明的部件应用于零件 特别要求滑动和耐磨性，可以显着提高使用寿命。 此外，由于仅通过在气体气氛中加热来进行制造方法，因此可以同时处理大量的部件。 因此，本发明的不锈钢部件可以作为耐磨性所需的不锈钢部件而被广泛使用。

公开(公告)号：US06994562B2

公开(公告)日：2006-02-07

申请号：US10280050

申请日：2002-10-25

申请人： Norihito Suzuki ,  Hisafumi Maruo ,  Masashi Nagao ,  Masayuki Saito ,  Masayuki Sato ,  Takanori Watanabe

发明人： Norihito Suzuki ,  Hisafumi Maruo ,  Masashi Nagao ,  Masayuki Saito ,  Masayuki Sato ,  Takanori Watanabe

IPC分类号： H01R12/00

CPC分类号： H01R13/7195 ,  H01R13/6616 ,  H01R13/6625 ,  H01R13/6658 ,  H01R31/08 ,  H01R2201/26 ,  H04L12/40 ,  H04L2012/40215 ,  H04L2012/40273

摘要： In an apparatus for multiplex communication, a bus line constitutes a bus type network for connecting a plurality of terminal communication equipments. A plug-shaped terminating resistance device is detachably provided at an end of the bus line to reduce reflection noise.