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公开(公告)号：US20070072336A1
公开(公告)日：2007-03-29
申请号：US11447820
申请日：2006-06-06
Applicant: Han Young Yu , In Bok Baek , Chang Geun Ahn , Ki Ju Im , Jong Heon Yang , Ung Hwan Pi , Min Ki Ryu , Chan Woo Park , Sung Yool Choi , Seong Jae Lee
Inventor： Han Young Yu , In Bok Baek , Chang Geun Ahn , Ki Ju Im , Jong Heon Yang , Ung Hwan Pi , Min Ki Ryu , Chan Woo Park , Sung Yool Choi , Seong Jae Lee
CPC classification number: H01L51/105 , B82Y10/00 , H01L51/0023 , H01L51/0595
Abstract: Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
Abstract translation: 提供一种制造纳米尺寸间隙电极器件的方法。 该方法包括以下步骤：在半导体层上设置浮动的纳米结构; 形成具有至少一个开口图案以与纳米结构相交的掩模层; 以及在通过所述开口图案暴露的所述半导体层上沉积金属以形成电极，使得通过所述纳米结构在所述纳米结构下方提供纳米尺寸间隙。
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公开(公告)号：US07138331B2
公开(公告)日：2006-11-21
申请号：US10800704
申请日：2004-03-16
Applicant: Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
Inventor： Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
IPC: H01L21/4763
CPC classification number: H01L51/0023 , B82Y10/00 , H01L51/0595 , Y10S977/78 , Y10S977/781 , Y10S977/784 , Y10S977/932
Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.
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公开(公告)号：US10128433B2
公开(公告)日：2018-11-13
申请号：US15332460
申请日：2016-10-24
Applicant: Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
Inventor： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
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公开(公告)号：US09437654B2
公开(公告)日：2016-09-06
申请号：US14715633
申请日：2015-05-19
Applicant: Sung-Chul Lee , Kwang-Seok Kim , Kee-Won Kim , Young-Man Jang , Ung-Hwan Pi
Inventor： Sung-Chul Lee , Kwang-Seok Kim , Kee-Won Kim , Young-Man Jang , Ung-Hwan Pi
CPC classification number: H01L27/222 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.
Abstract translation: 磁存储器件可以包括衬底，衬底上的电路器件，电连接到电路器件的多个下电极，通常设置在多个下电极上的磁隧道结（MTJ）结构，以及多个上电极 MTJ结构上的电极。 MTJ结构可以包括多个磁性材料图案和将磁性材料图案彼此分开的多个绝缘材料图案。
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公开(公告)号：US20140339660A1
公开(公告)日：2014-11-20
申请号：US14247245
申请日：2014-04-07
Applicant: Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
Inventor： Sung-chul LEE , Kwang-seok KIM , Kee-won KIM , Young-man JANG , Ung-hwan PI
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228
Abstract: Provided are magnetoresistive elements, memory devices including the same, and an operation methods thereof. A magnetoresistive element may include a free layer, and the free layer may include a plurality of regions (layers) having different properties. The free layer may include a plurality of regions (layers) having different Curie temperatures. The Curie temperature of the free layer may change regionally or gradually away from the pinned layer. The free layer may include a first region having ferromagnetic characteristics at a first temperature and a second region having paramagnetic characteristics at the first temperature. The first region and the second region both may have ferromagnetic characteristics at a second temperature lower than the first temperature. The effective thickness of the free layer may change with temperature.
Abstract translation: 提供了磁阻元件，包括其的存储器件及其操作方法。 磁阻元件可以包括自由层，并且自由层可以包括具有不同特性的多个区域（层）。 自由层可以包括具有不同居里温度的多个区域（层）。 自由层的居里温度可以在区域上或逐渐地远离被钉扎层的位置改变。 自由层可以包括在第一温度下具有铁磁特性的第一区域和在第一温度下具有顺磁特性的第二区域。 第一区域和第二区域在低于第一温度的第二温度下都可以具有铁磁特性。 自由层的有效厚度可随温度而变化。
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Patent Agency Ranking
公开(公告)号：US20140269036A1
公开(公告)日：2014-09-18
申请号：US14184043
申请日：2014-02-19
Applicant: Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
Inventor： Ung-hwan PI , Kwang-seok KIM , Kee-won KIM , Sung-chul LEE , Young-man JANG
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/16 , G11C11/161 , G11C11/18
Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.
Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。
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17.发明授权公开(公告)号：US08525601B2
公开(公告)日：2013-09-03
申请号：US12654703
申请日：2009-12-29
Applicant: Sung-chul Lee , Mathias Klaui , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
Inventor： Sung-chul Lee , Mathias Klaui , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
IPC: H03B17/00
CPC classification number: H03B15/006 , Y10T428/1121
Abstract: An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.
Abstract translation: 振荡器使用磁畴壁的磁矩的进动产生信号。 振荡器包括具有磁畴壁的自由层和对应于磁畴壁的固定层。 非磁性分离层介于自由层和固定层之间。
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18.发明申请Tracks including magnetic layer and magnetic memory devices comprising the same 失效包含磁性层的磁迹和包括磁性层的磁存储装置公开(公告)号：US20110045318A1
公开(公告)日：2011-02-24
申请号：US12662215
申请日：2010-04-06
Applicant: Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
Inventor： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
IPC: G11B5/66
CPC classification number: G11B5/72 , G11B5/7325 , G11C11/14
Abstract: A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).
Abstract translation: 一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。 两个非磁性层中的一个包括具有大于或等于12的原子序数的元素。因此，磁性层具有相对高的非绝热性（＆Bgr）。
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公开(公告)号：US07413973B2
公开(公告)日：2008-08-19
申请号：US11510608
申请日：2006-08-28
Applicant: Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
Inventor： Chan Woo Park , Sung Yool Choi , Sang Ouk Ryu , Han Young Yu , Ung Hwan Pi , Tae Hyoung Zyung
IPC: H01L21/44
CPC classification number: H01L51/0023 , B82Y10/00 , H01L51/0595 , Y10S977/78 , Y10S977/781 , Y10S977/784 , Y10S977/932
Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.
Abstract translation: 提供一种纳米间隙电极器件的制造方法，包括以下步骤：在衬底上形成第一电极; 在所述第一电极的侧壁上形成间隔物; 在所述间隔物的一侧的暴露的基板上形成第二电极; 并且通过去除间隔物在第一电极和第二电极之间形成纳米间隙，从而可以可再现地控制纳米间隙位置，宽度，形状等，并且制造多个纳米间隙电极 设备同时进行。
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公开(公告)号：US09508925B2
公开(公告)日：2016-11-29
申请号：US14816410
申请日：2015-08-03
Applicant: Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
Inventor： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
CPC classification number: H01L43/04 , G11C11/161 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/065 , H01L43/08 , H01L43/10
Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
Abstract translation: 提供了一种磁存储器件。 磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层 。
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