公开(公告)号：US20160023317A1

公开(公告)日：2016-01-28

申请号：US14872650

申请日：2015-10-01

Applicant: Chi-Wen Lin ,  Chi-Kuo Lin

Inventor： Chi-Wen Lin ,  Chi-Kuo Lin

IPC: B24B5/04

CPC classification number: B24B5/04

Abstract: A grinding machine of one embodiment includes an abrasive wheel; a rectangular base including a top wall having a central through hole and an upper shoulder; a mounting member secured to the central through hole; an electric motor including a drive shaft passing through the mounting member to secure to the abrasive wheel; first and third workpiece holding units each including a board secured to the base; an adjustment knob on the board; and an L-shaped seat secured to the board and having a transverse channel, a front curved slot, a rear projection pivotably secured to the board, and a pin secured to the board and disposed in the slot; a second workpiece holding unit secured to the shoulder and including a vertical tunnel; and a fourth workpiece holding unit secured to the shoulder and including a vertical tunnel, an adjustment knob, and a fastening member.

Abstract translation: 一个实施例的磨床包括砂轮; 包括具有中心通孔和上肩部的顶壁的矩形基座; 固定在所述中央通孔上的安装构件; 电动机，其包括通过所述安装构件的驱动轴以固定到所述砂轮; 第一和第三工件保持单元，每个包括固定到基座的板; 板上的调节旋钮; 以及L形座，其固定到所述板上并具有横向通道，前弯曲槽，可枢转地固定到所述板的后突出部，以及固定到所述板并且设置在所述槽中的销; 第二工件保持单元，固定到所述肩部并且包括垂直通道; 以及第四工件保持单元，其固定到所述肩部并且包括垂直通道，调节旋钮和紧固构件。

公开(公告)号：US09117843B2

公开(公告)日：2015-08-25

申请号：US13232738

申请日：2011-09-14

Applicant: King-Yuen Wong ,  Chia-Yu Lu ,  Chien-Chang Su ,  Yen-Chun Lin ,  Yi-Fang Pai ,  Da-Wen Lin

Inventor： King-Yuen Wong ,  Chia-Yu Lu ,  Chien-Chang Su ,  Yen-Chun Lin ,  Yi-Fang Pai ,  Da-Wen Lin

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8249 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/045 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: An engineered epitaxial region compensates for short channel effects of a MOS device by providing a blocking layer to reduce or prevent dopant diffusion while at the same time reducing or eliminating the side effects of the blocking layer such as increased leakage current of a BJT device and/or decreased breakdown voltage of a rectifier. These side effects are reduced or eliminated by a non-conformal dopant-rich layer between the blocking layer and the substrate, which lessens the abruptness of the junction, thus lower the electric field at the junction region. Such a scheme is particularly advantageous for system on chip applications where it is desirable to manufacture MOS, BJT, and rectifier devices simultaneously with common process steps.

Abstract translation: 工程外延区域通过提供阻挡层来补偿MOS器件的短沟道效应，以减少或防止掺杂剂扩散，同时减少或消除阻挡层的副作用，例如增加BJT器件的漏电流和/ 或降低整流器的击穿电压。 这些副作用通过阻挡层和衬底之间的非共形掺杂剂富集层降低或消除，这降低了结的突然性，从而降低了接合区的电场。 这种方案对于片上系统应用是特别有利的，其中期望在通常的工艺步骤的同时制造MOS，BJT和整流器件。

公开(公告)号：US20150202729A1

公开(公告)日：2015-07-23

申请号：US14676784

申请日：2015-04-01

Applicant: Chi-Kuo Lin ,  Chi-Wen Lin

Inventor： Chi-Kuo Lin ,  Chi-Wen Lin

IPC: B23Q17/22

CPC classification number: B23Q17/2225 ,  B23Q17/2457 ,  B24B3/24

Abstract: A device for calibrating a drill bill of a chuck includes an intermediate sleeve including two rear curved elements, a front shoulder, internal threads rearward of the shoulder, and an externally threaded extension projecting out of a front end; a front window including a diametrical calibrating line; an externally threaded rim secured to the internal threads to urge the window against the shoulder; and a ring having internal threads secured to the extension. A fastening of the chuck and the device, a loosening of the retainer ring, and a rotation of the rear holding member to rotate the drill bill can align the drill bill with the calibrating line.

Abstract translation: 用于校准卡盘钻头的装置包括：中间套筒，包括两个后弯曲元件，前肩部，肩部后方的内螺纹和从前端伸出的外螺纹延伸部; 包括直径校准线的前窗; 固定到内螺纹上以将窗户推向肩部的外螺纹轮辋; 以及具有固定到延伸部的内螺纹的环。 卡盘和装置的紧固，保持环的松动以及后保持构件旋转钻床的旋转可使钻床与校准线对准。

公开(公告)号：US09085683B2

公开(公告)日：2015-07-21

申请号：US13642350

申请日：2011-04-19

Applicant: Wen-lin Zhao

Inventor： Wen-lin Zhao

IPC: C08L23/12 ,  C08K5/098 ,  C08K5/526 ,  C08K5/00

CPC classification number: C08L23/12 ,  C08K5/0083 ,  C08K5/098 ,  C08K5/526 ,  C08L2666/02

Abstract: A nucleating agent composition for increasing rigidity and toughness of polypropylene is provided. The nucleating agent composition comprises a carboxylate nucleating agent and a phosphate nucleating agent. The carboxylate nucleating agent is selected from the group consisting of sodium benzoate and hydroxyl aluminum para-tertiary butyl benzoate, and the phosphate nucleating agent is selected from any one of sodium 2,2′-methylene-di(4,6-di-t-butyl phenyl) phosphate and aluminum bis[2,2′-methylene-di(4,6-di-t-butylphenyl)] phosphate. The nucleating agent composition according to the present invention not only can significantly improve the bending modulus and thermal deformation temperature of polypropylene, but also can improve the impact strength of polypropylene.

Abstract translation: 提供了用于提高聚丙烯的刚性和韧性的成核剂组合物。 成核剂组合物包含羧酸盐成核剂和磷酸盐成核剂。 羧酸盐成核剂选自苯甲酸钠和对羟基苯甲酸羟基铝，磷酸盐成核剂选自2,2'-亚甲基二（4,6-di-t） 丁基苯基）磷酸酯和双[2,2'-亚甲基 - 二（4,6-二叔丁基苯基）]磷酸铝。 根据本发明的成核剂组合物不仅可以显着提高聚丙烯的弯曲模量和热变形温度，而且可以提高聚丙烯的冲击强度。

公开(公告)号：US09006730B2

公开(公告)日：2015-04-14

申请号：US13101983

申请日：2011-05-05

Applicant: Chin-Wen Lin ,  Chuan-I Huang ,  Chung-Chin Huang ,  Ted Hong Shinn

Inventor： Chin-Wen Lin ,  Chuan-I Huang ,  Chung-Chin Huang ,  Ted Hong Shinn

IPC: H01L29/12 ,  H01L29/786

CPC classification number: H01L23/3192 ,  H01L23/3171 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide semiconductor structure and a production method thereof, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.

Abstract translation: 一种金属氧化物半导体结构及其制造方法，其结构包括：基板; 沉积在基板上的栅电极; 栅极绝缘层，沉积在栅电极和衬底上; IGZO层，沉积在栅极绝缘层上并用作沟道; 源电极，淀积在栅极绝缘层上并位于IGZO层的一侧; 漏电极，沉积在栅极绝缘层上并位于IGZO层的另一侧; 沉积在源电极，IGZO层和漏极上的第一钝化层; 沉积在所述第一钝化层上的第二钝化层; 以及沉积在源电极，第二钝化层和漏电极上的不透明树脂层。

公开(公告)号：US08921946B2

公开(公告)日：2014-12-30

申请号：US13294251

申请日：2011-11-11

Applicant: King-Yuen Wong ,  Chia-Pin Lin ,  Chia-Yu Lu ,  Yi-Cheng Tsai ,  Da-Wen Lin ,  Kuo-Feng Yu

Inventor： King-Yuen Wong ,  Chia-Pin Lin ,  Chia-Yu Lu ,  Yi-Cheng Tsai ,  Da-Wen Lin ,  Kuo-Feng Yu

IPC: H01L29/772 ,  H01L21/265 ,  H01L27/06 ,  H01L29/8605 ,  H01L29/66

CPC classification number: H01L28/20 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823437 ,  H01L27/0629 ,  H01L29/66545 ,  H01L29/8605

Abstract: A semiconductor device includes a substrate including an isolation region, and a resistor disposed over the isolation region, wherein the resistor includes an implant with an inverse box-like dopant profile that minimizes resistance variation from subsequent planarization variation. A contact is disposed over the resistor. A method of fabricating such a semiconductor device is also provided.

Abstract translation: 半导体器件包括包括隔离区域的衬底和设置在隔离区域上的电阻器，其中电阻器包括具有反向盒状掺杂物分布的植入物，其使得电阻变化与随后的平坦化变化最小化。 触点设置在电阻上。 还提供了一种制造这种半导体器件的方法。

公开(公告)号：US08834135B2

公开(公告)日：2014-09-16

申请号：US13409459

申请日：2012-03-01

Applicant: Wen-Lin Hsu ,  Fu-Jung Ou ,  Cheng-Chun Chou ,  Chin-Ho Tsai

Inventor： Wen-Lin Hsu ,  Fu-Jung Ou ,  Cheng-Chun Chou ,  Chin-Ho Tsai

IPC: F04D25/08 ,  F04D25/06 ,  G06F1/20 ,  F04D29/64 ,  F04D29/051

CPC classification number: F04D25/062 ,  F04D29/051 ,  F04D29/646 ,  G06F1/203

Abstract: A heat-dissipation fan comprises a hollow cylinder body, a fixing pillar, a stator, a fan wheel, a bearing and bearing plate. The fixing pillar comprises a free end and a fixing end fixed at the hollow cylinder body. The stator is installed at the hollow cylinder body being installed at the bearing plate. The fan wheel comprises a top plate, an outer ring wall, an inner ring wall and a penetration hole formed at the top plate. The inner ring wall surrounds the penetration hole, the hollow cylinder body and the stator are located between the outer ring wall and the inner ring wall, and the bearing is coupled to the inner ring wall. The free end of the fixing pillar is protruded to a top surface of the top plate, which results a supporting surface and the top surface being spaced apart by a first spacing.

Abstract translation: 散热风扇包括中空筒体，固定柱，定子，风扇轮，轴承和支承板。 固定柱包括固定在中空筒体上的自由端和固定端。 定子安装在轴承板上的中空筒体上。 风扇叶轮包括顶板，外环壁，内环壁和形成在顶板处的通孔。 内环壁围绕穿透孔，中空筒体和定子位于外环壁和内环壁之间，并且轴承联接到内环壁。 固定柱的自由端突出到顶板的顶表面，这导致支撑表面，并且顶表面间隔开第一间隔。

公开(公告)号：US08785286B2

公开(公告)日：2014-07-22

申请号：US12702803

申请日：2010-02-09

Applicant: Chun Hsiung Tsai ,  Chien-Tai Chan ,  Mao-Rong Yeh ,  Da-Wen Lin

Inventor： Chun Hsiung Tsai ,  Chien-Tai Chan ,  Mao-Rong Yeh ,  Da-Wen Lin

IPC: H01L21/336 ,  H01L21/26 ,  H01L21/42 ,  H01L21/223

CPC classification number: H01L29/66803 ,  H01L21/2236 ,  H01L21/2254 ,  H01L21/26526 ,  H01L21/26586

Abstract: A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer having an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type; performing a knock-on implantation to drive the impurity into the semiconductor fin; and removing the dopant-rich layer.

Abstract translation: 一种形成集成电路的方法包括提供半导体晶片，该半导体晶片包括在半导体晶片的表面上分配的半导体鳍; 在所述半导体鳍片的顶表面和侧壁上形成具有杂质的富掺杂层，其中所述杂质为n型或p型; 执行敲击植入以将杂质驱动到半导体鳍片中; 并除去富含掺杂剂的层。

公开(公告)号：US08766358B2

公开(公告)日：2014-07-01

申请号：US13454149

申请日：2012-04-24

Applicant: Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

Inventor： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC: H01L29/76

CPC classification number: H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/7816

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.

Abstract translation: 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 具有第一导电类型的第一阱和具有第二导电类型的第二阱都形成在深阱中并且从衬底的表面向下延伸，并且第二阱与第一阱间隔开; 栅电极，形成在所述基板上并且设置在所述第一阱和所述第二阱之间; 从衬底的表面向下延伸并且设置在栅电极和第二阱之间的隔离件; 导电插头，其包括彼此电连接的第一部分和第二部分，并且所述第一部分电连接到所述栅电极，并且所述第二部分穿透所述隔离。

公开(公告)号：US08747262B1

公开(公告)日：2014-06-10

申请号：US13685225

申请日：2012-11-26

Applicant: Hung-Wen Lin ,  Ping-Hsueh Li

Inventor： Hung-Wen Lin ,  Ping-Hsueh Li

IPC: A63B59/06

CPC classification number: A63B60/00 ,  A63B59/00

Abstract: A jointed bat includes a barrel, a handle, and a glue. The barrel is tubular and has one end fixedly connected to a top cap and the other end having a tapered first joint portion. An opening is formed at the end of the first joint portion. The handle is tubular and has one end fixedly connected to a knob and the other end having a tapered resilient second joint portion. At least a relief slit is formed at an end of the second joint portion. A dam protrudes from the second joint portion and abuts against an inner wall of the first joint portion. The second joint portion penetrates the opening to fit inside the first joint portion. The glue is filled between and fixedly connected between the first and second joint portions. Therefore, requirements for precision in production of the barrel and the handle are reduced.

Abstract translation: 连接的蝙蝠包括桶，手柄和胶水。 筒是管状的，其一端固定地连接到顶盖，另一端具有锥形的第一接合部分。 在第一关节部分的端部形成开口。 手柄是管状的，并且一端固定地连接到一个把手，另一端具有锥形的弹性第二关节部分。 在第二关节部分的端部处形成至少一个释放狭缝。 坝从第二关节部分突出并邻接第一关节部分的内壁。 第二关节部分穿透开口以装配在第一关节部分内。 胶水填充在第一和第二接合部分之间并固定连接在第一和第二接合部分之间 因此，减少了针筒和手柄的生产精度要求。