公开(公告)号：US5633193A

公开(公告)日：1997-05-27

申请号：US652285

申请日：1996-05-22

申请人： James N. Baillargeon ,  Alfred Y. Cho ,  Sung-Nee G. Chu ,  Wen-Yen Hwang

发明人： James N. Baillargeon ,  Alfred Y. Cho ,  Sung-Nee G. Chu ,  Wen-Yen Hwang

IPC分类号： H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546

摘要： Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art. An exemplary and preferred application of the method is in grating formation and overgrowth in InP-based DFB lasers.

摘要翻译： 在不同的含磷III / V半导体材料（例如，InP）的非平面表面上的含磷III / V半导体材料（例如，InGaAsP）的异质外延生长通过基本上加热非平面表面而得到促进 抽真空室至质量传递温度，并将表面暴露于至少磷的助熔剂形成固体磷源。 该质量传送步骤之后是期望的半导体材料的原位生长，其中生长的至少初始部分在不大于质量传输温度的第一生长温度下进行。 生长通常在高于第一生长温度的第二生长温度下完成。 该方法的一个重要方面是从固体源提供所需的通量（例如磷，砷，铟，镓），导致无氢的质量传输和生长，其可以在比在 现有技术 该方法的示例性和优选应用是在基于InP的DFB激光器中的光栅形成和过度生长。

公开(公告)号：US06788466B2

公开(公告)日：2004-09-07

申请号：US10198683

申请日：2002-07-18

申请人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

发明人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC分类号： G02B528

CPC分类号： H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

摘要： A multiple reflectivity band reflector (MRBR) includes a stack of dielectric layers, arranged so that the reflector has a reflectivity profile comprising a plurality of reflectivity bands, e.g. at least first and second wavelength bands with reflectivity above a lasing threshold reflectivity, separated by a third wavelength band between the first and second wavelength bands having reflectivity below the lasing threshold reflectivity. A laser having at least a first mirror and an MRBR as the second mirror has a laser cavity, at least a portion of which is defined by the first mirror and the MRBR. An active region located within the laser cavity contains a material that is capable of stimulated emission at one or more wavelengths in the first and second wavelength bands. The gain spectrum of the laser is adjusted to select one of the first and second wavelength bands, thereby providing for lasing at a wavelength within the selected wavelength band. The laser may be, e.g., a monolithic VCSEL or a one-section or two-section external-cavity VECSEL having the MRBR as one of its cavity mirrors.

摘要翻译： 多反射带反射器（MRBR）包括一叠电介质层，其布置成使得反射器具有包括多个反射带的反射率分布， 具有高于激光阈值反射率的反射率的至少第一和第二波长带，其具有低于激光阈值反射率的反射率的第一和第二波长带之间的第三波长带分隔开。 具有至少第一反射镜和MRBR作为第二反射镜的激光器具有激光腔，其至少一部分由第一反射镜和MRBR限定。 位于激光腔内的有源区域包含能够在第一和第二波长带中的一个或多个波长处受激发射的材料。 调整激光器的增益光谱以选择第一和第二波长带中的一个，从而提供在所选波长带内的波长处的激光。 激光器可以是例如单片VCSEL或具有MRBR作为其腔镜之一的单段或两段外腔VECSEL。

公开(公告)号：US06763053B2

公开(公告)日：2004-07-13

申请号：US10198373

申请日：2002-07-18

申请人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

发明人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC分类号： H01S5183

CPC分类号： H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

摘要： A multiple reflectivity band reflector (MRBR) includes a stack of dielectric layers, arranged so that the reflector has a reflectivity profile comprising a plurality of reflectivity bands, e.g. at least first and second wavelength bands with reflectivity above a lasing threshold reflectivity, separated by a third wavelength band between the first and second wavelength bands having reflectivity below the lasing threshold reflectivity. A laser having at least a first mirror and an MRBR as the second mirror has a laser cavity, at least a portion of which is defined by the first mirror and the MRBR. An active region located within the laser cavity contains a material that is capable of stimulated emission at one or more wavelengths in the first and second wavelength bands. The gain spectrum of the laser is adjusted to select one of the first and second wavelength bands, thereby providing for lasing at a wavelength within the selected wavelength band. The laser may be, e.g., a monolithic VCSEL or a one-section or two-section external-cavity VECSEL having the MRBR as one of its cavity mirrors.

摘要翻译： 多反射带反射器（MRBR）包括一叠电介质层，其布置成使得反射器具有包括多个反射带的反射率分布， 具有高于激光阈值反射率的反射率的至少第一和第二波长带，其具有低于激光阈值反射率的反射率的第一和第二波长带之间的第三波长带分隔开。 具有至少第一反射镜和MRBR作为第二反射镜的激光器具有激光腔，其至少一部分由第一反射镜和MRBR限定。 位于激光腔内的有源区域包含能够在第一和第二波长带中的一个或多个波长处受激发射的材料。 调整激光器的增益光谱以选择第一和第二波长带中的一个，从而提供在所选波长带内的波长处的激光。 激光器可以是例如单片VCSEL或具有MRBR作为其腔镜之一的单段或两段外腔VECSEL。

公开(公告)号：US06560259B1

公开(公告)日：2003-05-06

申请号：US09854800

申请日：2001-05-14

申请人： Wen-Yen Hwang

发明人： Wen-Yen Hwang

IPC分类号： H01S308

CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/187 ,  H01S5/2036 ,  H01S5/3215 ,  H01S5/3402

摘要： A surface emitting, unipolar, quantum cascade semiconductor laser is constructed of a multilayer semiconductor structure on a substrate. The laser has doped semiconductor material only of one conductivity type. The laser includes a core region having a larger effective refractive index than cladding regions. The core region includes a plurality of repeat units, each repeat unit having a nominally identical active region and a carrier injection and relaxation region. The repeat units are for quantum cascade generation of a lasing resonance mode within a lasing resonance cavity of the multilayer semiconductor structure. A diffraction grating is fabricated within the multilayer semiconductor structure. The grating resonantly couples diverging counter-propagating traveling wave beams of the laser resonance mode while also diffracting light into an upward direction perpendicular to a grating plane and toward the substrate surface, and also into a downward direction. A mirror reflects the downwardly coupled light toward the upward direction again. The optical distance between reflecting mirror and the grating is selected to combine the reflected light with the upwardly coupled light in-phase as the output beam. A lens-like media structure having an effective refractive index profile that varies quadratically in a direction transverse to the laser resonance cavity is included in the multilayer semiconductor structure. The lowest value of the profile is located at a central portion of the laser. The profile monotonically increases moving away from the central portion. The lens-like media structure interacts with the counter-propagating traveling wave beams to provide single mode output.

摘要翻译： 表面发射单极量子级联半导体激光器由衬底上的多层半导体结构构成。 激光器仅掺杂了一种导电类型的半导体材料。 激光器包括具有比包层区域更大的有效折射率的纤芯区域。 芯区域包括多个重复单元，每个重复单元具有名义上相同的有源区和载流子注入和弛豫区。 重复单元用于在多层半导体结构的激光共振腔内产生激光共振模式的量子级联。 在多层半导体结构内制造衍射光栅。 光栅谐振地耦合激光谐振模式的发散反向传播行波，同时将光衍射成垂直于光栅平面并朝向衬底表面的向上方向，并且还向下方向。 反射镜再次向下反射向下的光。 选择反射镜和光栅之间的光学距离，以将反射光与向上耦合的光同相作为输出光束。 在多层半导体结构中包括具有在与激光谐振腔横向的方向上二次变化的有效折射率分布的透镜状介质结构。 轮廓的最低值位于激光的中心部分。 轮廓单调地增加远离中心部分。 透镜状介质结构与反向传播的行波相互作用以提供单模输出。

公开(公告)号：US06549556B1

公开(公告)日：2003-04-15

申请号：US10002997

申请日：2001-11-30

申请人： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Stefan J. Murry ,  Chih-Hsiang Lin ,  Jun Zheng ,  James N. Baillargeon

发明人： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Stefan J. Murry ,  Chih-Hsiang Lin ,  Jun Zheng ,  James N. Baillargeon

IPC分类号： H01S5183

CPC分类号： H01S5/18341 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18377

摘要： A metal bonded vertical-cavity surface-emitting laser (VCSEL) structure with a bottom dielectric distributed Bragg reflector (DBR) mirror, and method for fabricating the VCSEL structure. The VCSEL structure consists a metal bonding layer disposed on a submount at a bottom side of the metal bonding layer; a bottom cavity mirror comprising a bottom dielectric distributed Bragg reflector (DBR) disposed within the metal bonding layer, the bottom dielectric DBR having a reflectance band including the lasing wavelength; a bottom current-spreading layer disposed on said bottom dielectric DBR and on a substantially flat, annular top surface of said metal bonding layer; a semiconductor active region disposed on the bottom current-spreading layer, said active region capable of stimulated emission at the lasing wavelength; and a top cavity mirror disposed above the active region and having a reflectance band including the lasing wavelength.

摘要翻译： 具有底部介电分布式布拉格反射镜（DBR）镜的金属结合垂直腔表面发射激光器（VCSEL）结构以及制造VCSEL结构的方法。 VCSEL结构包括设置在金属接合层的底侧的基座上的金属接合层; 包括设置在所述金属接合层内的底部电介质分布布拉格反射器（DBR）的底腔反射镜，所述底部电介质DBR具有包括所述激光波长的反射带; 底部电流扩散层，设置在所述底部电介质DBR上并且在所述金属结合层的基本上平坦的环形顶表面上; 设置在所述底部电流扩展层上的半导体有源区，所述有源区能够以激发波长的受激发射; 以及设置在有源区上方并且具有包括激光波长的反射带的顶腔镜。

公开(公告)号：US07010012B2

公开(公告)日：2006-03-07

申请号：US09917068

申请日：2001-07-26

申请人： Wen-Yen Hwang ,  Stefan J. Murry

发明人： Wen-Yen Hwang ,  Stefan J. Murry

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/423 ,  H01S5/0207 ,  H01S5/183 ,  H01S2301/02

摘要： The present invention is directed a method of fabricating a VCSEL. First, a substrate with a back surface and a front surface is provided. Then, a first reflector, an active region, and a second reflector are disposed on the front surface. The first reflector is disposed on the front surface. The active region is interposed between the first reflector and the second reflector. Then, anti-reflection features are formed into the back surface of the substrate to reduce specular reflection of light into the active region.

公开(公告)号：US06746777B1

公开(公告)日：2004-06-08

申请号：US09820072

申请日：2001-03-28

申请人： Wen-Yen Hwang

发明人： Wen-Yen Hwang

IPC分类号： H01L2906

CPC分类号： H01S5/0224 ,  H01L21/76256 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/183 ,  H01S2301/173 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/31678

摘要： A substrate including a base substrate, an interfacial bonding layer disposed on the base substrate, and a thin film adaptive crystalline layer disposed on the interfacial bonding layer. The interfacial bonding layer is solid at room temperature, and is in liquid-like form when heated to a temperature above room temperature. The interfacial bonding layer may be heated during epitaxial growth of a target material system grown on the thin film layer to provide the thin film layer with lattice flexibility to adapt to the different lattice constant of the target material system. Alternatively, the thin film layer is originally a strained layer having a strained lattice constant different from that of the target material system but with a relaxed lattice constant very close to that of the target material system, which lattice constant is relaxed to its relaxed value by heating the interfacial bonding layer after the thin film layer is removed from the first semiconductor substrate, so that the thin film layer has an adjusted lattice constant equal to its unstrained, relaxed value and very close to the lattice constant of the target material system.

摘要翻译： 包括基底基板，设置在基底基板上的界面粘合层和设置在界面粘接层上的薄膜自适应晶体层的基板。 界面接合层在室温下为固体，当加热至室温以上时呈液状。 可以在生长在薄膜层上的目标材料体系的外延生长期间加热界面结合层，以提供具有晶格柔性的薄膜层，以适应目标材料体系的不同晶格常数。 或者，薄膜层最初是具有与目标材料体系不同的应变晶格常数的应变层，但具有非常接近目标材料体系的松弛晶格常数，该晶格常数通过 在从第一半导体衬底去除薄膜层之后加热界面结合层，使得薄膜层具有等于其未约束，松弛值并且非常接近靶材系统的晶格常数的调整晶格常数。

公开(公告)号：US06669367B2

公开(公告)日：2003-12-30

申请号：US09974287

申请日：2001-10-10

申请人： Chih-Hsiang Lin ,  Wen-Yen Hwang ,  Jun Zheng ,  Stefan J. Murry ,  James N. Baillargeon

发明人： Chih-Hsiang Lin ,  Wen-Yen Hwang ,  Jun Zheng ,  Stefan J. Murry ,  James N. Baillargeon

IPC分类号： G02B612

CPC分类号： H01S5/183 ,  G02B6/241 ,  G02B6/4203 ,  G02B6/4215 ,  G02B6/424 ,  H01S3/08059 ,  H01S5/02284 ,  H01S5/1221 ,  H01S5/141 ,  H01S5/147 ,  H01S5/423

摘要： A vertical-external-cavity surface-emitting laser (VECSEL) is formed by providing a monolithic portion having a first laser cavity mirror and an active region disposed on the first mirror. The cavity is completed with a second laser cavity mirror, such as a DBR, deposited onto the light-receiving end of an optical device, such as an optical fiber. The DBR-on-fiber-end is mounted with respect to the active region to complete the laser cavity and to provide automatic coupling of the output laser light into the fiber.

摘要翻译： 通过提供具有第一激光腔反射镜和设置在第一反射镜上的有源区的单片部分形成垂直外腔表面发射激光器（VECSEL）。 该腔完成了沉积在诸如光纤的光学装置的光接收端的第二激光腔镜（例如DBR）。 相对于有源区域安装DBR光纤端，以完成激光腔并且将输出激光自动耦合到光纤中。

公开(公告)号：US06560265B2

公开(公告)日：2003-05-06

申请号：US09951298

申请日：2001-09-11

申请人： Wen-Yen Hwang ,  James N. Baillargeon

发明人： Wen-Yen Hwang ,  James N. Baillargeon

IPC分类号： H01L2906

CPC分类号： H01S5/18355 ,  H01S5/18319 ,  H01S5/18386 ,  H01S5/2081 ,  H01S5/423

摘要： The present invention is directed to a VCSEL and method of fabricating same. First, a substrate is provided. Then, a first reflector is disposed (where “disposed” includes being deposited or epitaxially grown) on the substrate, which is followed by an active region being disposed on the first reflector. Then, a second reflector is disposed on the active region such that the active region is interposed between the first reflector and the second reflector. Then, a polarizer is formed inside, or on the top or bottom of, the second reflector. The polarizer contains parallel stripes of material doped differently than that of the second reflector. The polarizer polarizes the light generated from the active region.

摘要翻译： 本发明涉及VCSEL及其制造方法。 首先，提供基板。 然后，在基板上设置第一反射器（其中“放置”包括沉积或外延生长），其后是设置在第一反射器上的有源区。 然后，第二反射器设置在有源区域上，使得有源区域介于第一反射器和第二反射器之间。 然后，在第二反射器的内部或顶部或底部形成起偏振器。 偏振器包含与第二反射器不同的掺杂材料的平行条纹。 偏振器偏振从活性区域产生的光。

公开(公告)号：US5883001A

公开(公告)日：1999-03-16

申请号：US481470

申请日：1995-07-13

申请人： Been Yih Jin ,  Daniel L. W. Yen ,  Wen Yen Hwang ,  Ming Hong Wang ,  Sheng Hsien Wong ,  Gino Hwang ,  Po Shen Chang ,  Yu Tsai Liu ,  Chung Chi Chang ,  Ta Hung Yang

发明人： Been Yih Jin ,  Daniel L. W. Yen ,  Wen Yen Hwang ,  Ming Hong Wang ,  Sheng Hsien Wong ,  Gino Hwang ,  Po Shen Chang ,  Yu Tsai Liu ,  Chung Chi Chang ,  Ta Hung Yang

IPC分类号： H01L21/8247 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L23/31 ,  H01L23/532 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L21/268

CPC分类号： H01L21/3145 ,  H01L23/3192 ,  H01L23/5329 ,  H01L29/66825 ,  H01L2924/0002 ,  Y10S438/958

摘要： A method for forming a UV transmission passivation coating on an integrated circuit, such as EPROM, after completion of the active device and metal routing circuitry comprises depositing a first barrier dielectric layer over the integrated circuit; smoothing out underlying features by applying a layer of flowable dielectric over the first dielectric layer; and depositing a second dielectric layer over the flowable dielectric. Next a photoresist pattern is made over the second dielectric coating, having an opening layer over the at least one conductive pad. A wet etch process is used to remove portions of the second dielectric layer exposed by the opening. A dry etch process is used to remove portions of the remaining layers exposed through the opening, including the remaining portions of the second dielectric layer, the flowable dielectric layer and the first dielectric layer, down to the conductive pad. Finally, the photoresist is removed. The second dielectric layer is composed of a first protective dielectric, such as silicon oxynitride, deposited using plasma enhanced chemical vapor deposition, to protect the flowable dielectric layer from the subsequent wet etch process. The second dielectric layer also includes a top layer deposited using plasma enhanced chemical vapor deposition and comprising phosphorus doped silica to provide a stress buffer, and to prevent penetration of mobile ions to the first dielectric layer. The phosphorus doped silica layer is deposited using both high frequency and low frequency power for plasma formation during the deposition to increase the quality of the layer.

摘要翻译： PCT No.PCT / US94 / 12780 Sec。 371日期1995年7月13日 102（e）日期1995年7月13日PCT 1994年11月7日PCT PCT。 出版物WO96 / 14657 日期1996年5月17日在有源器件和金属布线电路完成之后，在诸如EPROM的集成电路上形成UV透射钝化涂层的方法包括在集成电路上沉积第一势垒介电层; 通过在第一介电层上施加一层可流动电介质来平滑底层特征; 以及在所述可流动电介质上沉积第二电介质层。 接下来，在第二电介质涂层上形成光致抗蚀剂图案，在至少一个导电焊盘上方具有开口层。 湿蚀刻工艺用于去除由开口暴露的第二电介质层的部分。 干蚀刻工艺用于去除通过开口暴露的剩余层的部分，包括第二介电层的剩余部分，可流动介电层和第一介电层，直到导电焊盘。 最后，去除光致抗蚀剂。 第二电介质层由使用等离子体增强化学气相沉积沉积的第一保护电介质（例如氮氧化硅）组成，以保护可流动的电介质层免于后续的湿蚀刻工艺。 第二介电层还包括使用等离子体增强化学气相沉积沉积的顶层，并且包括磷掺杂二氧化硅以提供应力缓冲层，并且防止移动离子渗透到第一介电层。 在沉积期间，使用高频和低频功率沉积磷掺杂二氧化硅层用于等离子体形成以提高层的质量。