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29 条记录 (耗时 0.021 秒)

    Deposition chamber and method for depositing low dielectric constant films
    11.
    发明授权
    Deposition chamber and method for depositing low dielectric constant films 失效
    沉积室和沉积低介电常数膜的方法

    公开(公告)号：US06833052B2

    公开(公告)日：2004-12-21

    申请号：US10283565

    申请日：2002-10-29

    申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    IPC分类号： C23F1600

    CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。 氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。 将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。 气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

    Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
    12.
    发明授权
    Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application 失效
    室内调理方法，以提高含氟电介质膜与金属的附着力，用于VLSI应用

    公开(公告)号：US06624064B1

    公开(公告)日：2003-09-23

    申请号：US08948895

    申请日：1997-10-10

    申请人： Turgut Sahin ,  Yaxin Wang ,  Ming Xi

    发明人： Turgut Sahin ,  Yaxin Wang ,  Ming Xi

    IPC分类号： C23C1634

    CPC分类号： H01L21/02304 ,  C23C16/4404 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76837

    摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

    摘要翻译： 本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。 本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。 本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。 通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

    Method of forming metal electrodes
    14.
    发明授权
    Method of forming metal electrodes 失效
    形成金属电极的方法

    公开(公告)号：US06475854B2

    公开(公告)日：2002-11-05

    申请号：US09748072

    申请日：2000-12-21

    申请人： Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

    发明人： Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

    IPC分类号： H01L218242

    CPC分类号： H01L28/75 ,  H01L28/55

    摘要： A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

    摘要翻译： 包括底电极，绝缘体和顶电极的电容器结构及其制造方法。 底部和顶部电极优选地包括金属部分和导电含氧金属部分。 在一个实施例中，沉积钌层以形成底部电极的一部分。 在沉积绝缘体之前，将钌在含氧环境中退火。 然后将绝缘体沉积在含氧钌层上。 顶部电极的形成包括在绝缘体上沉积第一金属，退火第一金属，然后沉积第二金属。 第一和第二金属可以是钌。

    CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application
    17.
    发明授权
    CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application 失效
    CVD沉积法提高含氟电介质金属线对VLSI应用的粘附性

    公开(公告)号：US06323119B1

    公开(公告)日：2001-11-27

    申请号：US08948890

    申请日：1997-10-10

    申请人： Ming Xi ,  Turgut Sahin ,  Yaxin Wang

    发明人： Ming Xi ,  Turgut Sahin ,  Yaxin Wang

    IPC分类号： C23C1634

    CPC分类号： H01L21/02304 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76837 ,  H01L21/76856

    摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

    摘要翻译： 本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。 本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。 本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。 通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

    INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES
    19.
    发明申请
    INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES 审中-公开
    综合工具集和工艺在高级纳米电子设备制造过程中保护基底表面湿润清洗和清洁

    公开(公告)号：US20110143553A1

    公开(公告)日：2011-06-16

    申请号：US12965765

    申请日：2010-12-10

    申请人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

    发明人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

    IPC分类号： H01L21/469 ,  B05C3/02 ,  B05C11/00 ,  B05C11/02

    CPC分类号： H01L21/288 ,  C23C18/1642 ,  C23C18/1689 ,  C23C18/1872 ,  H01L21/76849

    摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.

    摘要翻译： 用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。 然后用清洗液在无电沉积模块中冲洗基材的表面。 控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。 将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。 衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。 一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。