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1.发明授权Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop 失效粘附和最小化无电解CO合金膜上的氧化，用于与低K金属间电介质和蚀刻停止集成公开(公告)号：US07910476B2
公开(公告)日：2011-03-22
申请号：US12240744
申请日：2008-09-29
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译： 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料 。
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2.发明申请ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STOP 失效用于与低K金属介电和蚀刻停止集成的电解CO合金膜上的粘合和最小化氧化公开(公告)号：US20090029544A1
公开(公告)日：2009-01-29
申请号：US12240744
申请日：2008-09-29
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher D. Bencher , Mehul B. Naik
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译： 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料 。
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3.发明申请Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop 审中-公开粘附和最小化无电解CO合金膜上的氧化，用于与低K金属间电介质和蚀刻停止集成公开(公告)号：US20070099417A1
公开(公告)日：2007-05-03
申请号：US11329785
申请日：2006-01-10
申请人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
发明人： Hongbin Fang , Timothy Weidman , Fang Mei , Yaxin Wang , Arulkumar Shanmugasundram , Christopher Bencher , Mehul Naik
IPC分类号： H01L21/469
CPC分类号： H01L21/76843 , H01L21/76829 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76864
摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.
摘要翻译： 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到大于约100℃，以及沉积低介电常数材料 。
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公开(公告)号：US20080024762A1
公开(公告)日：2008-01-31
申请号：US11830202
申请日：2007-07-30
IPC分类号： G01N21/00
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。
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5.发明申请公开(公告)号：US20050170650A1
公开(公告)日：2005-08-04
申请号：US10970354
申请日：2004-10-21
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C23C18/1893 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： In one embodiment, a method for activating a metal layer prior to depositing a cobalt-containing capping layer is provided which includes exposing the metal layer to an electroless activation solution to deposit a palladium layer on the metal layer and depositing the cobalt-containing capping layer on the palladium layer. The electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, nitric acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water. In another embodiment, the electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, methanesulfonic acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water.
摘要翻译： 在一个实施方案中，提供了在沉积含钴覆盖层之前激活金属层的方法，其包括将金属层暴露于无电解活化溶液以在钯金属层上沉积钯层并沉积含钴覆盖层 在钯层上。 无电解激活溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的硝酸和水。 在另一个实施方案中，无电解活化溶液含有浓度范围为约0.01mM至约1.0mM的硝酸钯，浓度为约0.01mM至约3.0mM的甲磺酸和水。
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公开(公告)号：US07542132B2
公开(公告)日：2009-06-02
申请号：US11830202
申请日：2007-07-30
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。
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公开(公告)号：US20050161338A1
公开(公告)日：2005-07-28
申请号：US10970839
申请日：2004-10-21
IPC分类号： C23C18/18 , C23C18/34 , C23C18/50 , C25D5/10 , H01L21/288 , H01L21/768
CPC分类号： H01L21/288 , C23C18/1844 , C23C18/34 , C23C18/50 , H01L21/76849 , H01L21/76874
摘要： In one embodiment, a method for depositing a cobalt-containing capping layer on a metal layer is provided which includes rinsing the metal layer with a deionized water wetting step, depositing a palladium layer on the metal layer by exposing the metal layer to an electroless activation solution comprising a palladium precursor and an acid, and depositing the cobalt-containing capping layer on the palladium layer by exposing the palladium layer to an electroless cobalt-containing solution comprising a cobalt source, a tungsten source, an oxygen scavenger and a surfactant. Ascorbic acid may be used as the oxygen scavenger. In another embodiment, a composition of an electroless plating solution is provided which includes a cobalt source at a concentration in a range from about 50 mM to about 250 mM, a tungsten source at a concentration in a range from about 10 mM to about 100 mM, a complexing agent at a concentration in a range from about 10 mM to about 200 mM, at least one reductant at a concentration in a range from about 1 mM to about 100 mM, a surfactant at a concentration in a range from about 1 mg/L to about 100 mg/L, and ascorbic acid at a concentration in a range from about 30 mg/L to about 300 mg/L.
摘要翻译： 在一个实施例中，提供了一种用于在金属层上沉积含钴覆盖层的方法，其包括用去离子水润湿步骤冲洗金属层，通过将金属层暴露于无电激活 包含钯前体和酸的溶液，并通过将钯层暴露于包含钴源，钨源，除氧剂和表面活性剂的无电镀钴溶液中，将钯覆盖层沉积在钯层上。 可以使用抗坏血酸作为除氧剂。 在另一个实施方案中，提供了化学镀溶液的组合物，其包含浓度在约50mM至约250mM范围内的钴源，浓度范围为约10mM至约100mM的钨源 浓度范围为约10mM至约200mM的络合剂，至少一种浓度为约1mM至约100mM的还原剂，浓度为约1mg的表面活性剂 L至约100mg / L，抗坏血酸浓度为约30mg / L至约300mg / L。
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公开(公告)号：US07273813B2
公开(公告)日：2007-09-25
申请号：US11053501
申请日：2005-02-08
IPC分类号： H01L21/44
CPC分类号： C23C18/1844 , C11D7/06 , C11D7/08 , C11D7/265 , C11D11/0047 , C23F1/18 , C23G1/103 , H01L21/02074 , H01L21/76826 , H01L21/76849 , H01L21/76877 , H01L21/76883
摘要： A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.
摘要翻译： 公开了一种方法和清洁溶液，其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物，而基本上不利地影响由其形成的互连。 清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。 在一个实施方案中，核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。 该方法的一个实施例包括提供平坦化的基板，将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料，并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上 沉积
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公开(公告)号：US20060174912A1
公开(公告)日：2006-08-10
申请号：US11053501
申请日：2005-02-08
IPC分类号： B08B6/00 , H01L21/4763 , C25F1/00
CPC分类号： C23C18/1844 , C11D7/06 , C11D7/08 , C11D7/265 , C11D11/0047 , C23F1/18 , C23G1/103 , H01L21/02074 , H01L21/76826 , H01L21/76849 , H01L21/76877 , H01L21/76883
摘要： A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.
摘要翻译： 公开了一种方法和清洁溶液，其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物，而基本上不利地影响由其形成的互连。 清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。 在一个实施方案中，核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。 该方法的一个实施例包括提供平坦化的基板，将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料，并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上 沉积
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公开(公告)号：US20070111519A1
公开(公告)日：2007-05-17
申请号：US11428230
申请日：2006-06-30
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1653 , C23C18/168 , C23C18/1682 , C23C18/1685 , C23C18/1689 , C25D7/123 , C25D17/001 , H01L21/02063 , H01L21/02068 , H01L21/02087 , H01L21/28518 , H01L21/28562 , H01L21/67051 , H01L21/6719 , H01L21/6723 , H01L21/67751 , H01L21/68785 , H01L21/76814 , H01L21/76843 , H01L21/76856 , H01L21/76873 , H01L21/76874
摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
摘要翻译： 本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。 本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。 其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。 一个实施例提供了一种在衬底互连上形成覆盖层的方法。 方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。
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