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29 条记录 (耗时 0.023 秒)

    Method of forming metal electrodes
    1.
    发明授权
    Method of forming metal electrodes 失效
    形成金属电极的方法

    公开(公告)号：US06475854B2

    公开(公告)日：2002-11-05

    申请号：US09748072

    申请日：2000-12-21

    申请人： Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

    发明人： Pravin K. Narwankar ,  Annabel Nickles ,  Xiaoliang Jin ,  Deepak Upadhyaya ,  Yaxin Wang

    IPC分类号： H01L218242

    CPC分类号： H01L28/75 ,  H01L28/55

    摘要： A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

    摘要翻译： 包括底电极，绝缘体和顶电极的电容器结构及其制造方法。 底部和顶部电极优选地包括金属部分和导电含氧金属部分。 在一个实施例中，沉积钌层以形成底部电极的一部分。 在沉积绝缘体之前，将钌在含氧环境中退火。 然后将绝缘体沉积在含氧钌层上。 顶部电极的形成包括在绝缘体上沉积第一金属，退火第一金属，然后沉积第二金属。 第一和第二金属可以是钌。

    CVD ruthenium seed for CVD ruthenium deposition
    2.
    发明授权
    CVD ruthenium seed for CVD ruthenium deposition 失效
    CVD钌种子用于CVD钌沉积

    公开(公告)号：US06479100B2

    公开(公告)日：2002-11-12

    申请号：US09827878

    申请日：2001-04-05

    申请人： Xiaoliang Jin ,  Christopher P. Wade ,  Xianzhi Tao ,  Elaine Pao ,  Yaxin Wang ,  Jun Zhao

    发明人： Xiaoliang Jin ,  Christopher P. Wade ,  Xianzhi Tao ,  Elaine Pao ,  Yaxin Wang ,  Jun Zhao

    IPC分类号： C23C1640

    CPC分类号： C23C16/40 ,  C08F14/06 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/56

    摘要： The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

    摘要翻译： 本发明提供了在基材上形成钌籽晶层的方法，包括将含钌化合物引入CVD装置的步骤; 将氧气引入CVD装置中; 在处理室中保持富氧环境以初始形成氧化钌种子层; 汽化含钌化合物; 通过化学气相沉积将氧化钌种子层沉积到衬底上; 并在形成钌种子层的气体环境中退火沉积的氧化钌种子层。 还提供了通过金属有机化学气相沉积在金属钌晶种层上使用金属有机前体沉积钌金属薄膜的方法。

    Raman spectroscopy as integrated chemical metrology
    3.
    发明授权
    Raman spectroscopy as integrated chemical metrology 失效
    拉曼光谱作为综合化学计量学

    公开(公告)号：US07542132B2

    公开(公告)日：2009-06-02

    申请号：US11830202

    申请日：2007-07-30

    申请人： Hongbin Fang ,  Josh Golden ,  Timothy W. Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    发明人： Hongbin Fang ,  Josh Golden ,  Timothy W. Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    IPC分类号： G01J3/44 ,  G01N21/65

    CPC分类号： G01N21/65

    摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.

    摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

    Deposition of stable dielectric films
    4.
    发明授权
    Deposition of stable dielectric films 失效
    沉积稳定的介电膜

    公开(公告)号：US06511923B1

    公开(公告)日：2003-01-28

    申请号：US09574404

    申请日：2000-05-19

    申请人： Yaxin Wang ,  Michael Barnes ,  Thanh N. Pham ,  Farhad Moghadam

    发明人： Yaxin Wang ,  Michael Barnes ,  Thanh N. Pham ,  Farhad Moghadam

    IPC分类号： H01L2131

    CPC分类号： H01L21/31053 ,  H01L21/31629

    摘要： A composite insulating film including three layers is formed on a substrate having a gap. The first layer partially fills the gap and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. The second layer is formed over the first layer, and contains an undoped dielectric material such as silicon oxide, nitride, or oxynitride. The second layer is more stable and integrable, and less susceptible to moisture absorption and outgassing, than the first layer. The second layer is substantially smaller in thickness than the first layer, and at least substantially fills the gap. The third layer is formed over the second layer, and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. In a specific embodiment, the first layer is formed by plasma-enhanced chemical vapor deposition in which reactive species are generated from a process gas mixture by plasma for sputtering the first layer.

    摘要翻译： 在具有间隙的基板上形成包括三层的复合绝缘膜。 第一层部分地填充间隙并且包含具有低介电常数的介电材料，例如掺杂卤素的硅酸盐玻璃。 第二层形成在第一层上，并且包含未掺杂的介电材料，例如氧化硅，氮化物或氧氮化物。 第二层比第一层更稳定和可整合，较不易吸潮和脱气。 第二层的厚度明显小于第一层，并且至少基本上填充间隙。 第三层形成在第二层上，并且包含具有低介电常数的电介质材料，例如卤素掺杂的硅酸盐玻璃。 在具体实施例中，第一层通过等离子体增强化学气相沉积形成，其中通过等离子体从工艺气体混合物产生反应性物质以溅射第一层。

    Deposition chamber and method for depositing low dielectric constant films
    8.
    发明授权
    Deposition chamber and method for depositing low dielectric constant films 有权
    沉积室和沉积低介电常数膜的方法

    公开(公告)号：US07413627B2

    公开(公告)日：2008-08-19

    申请号：US10997311

    申请日：2004-11-23

    申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    IPC分类号： H01L21/3065 ,  C23C16/455 ,  C23C16/505

    CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。 氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内 底物支撑。 将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。 气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

    Method for silicon based dielectric chemical vapor deposition
    9.
    发明申请
    Method for silicon based dielectric chemical vapor deposition 有权
    硅基电介质化学气相沉积方法

    公开(公告)号：US20060286818A1

    公开(公告)日：2006-12-21

    申请号：US11155646

    申请日：2005-06-17

    申请人： Yaxin Wang ,  Yuji Maeda ,  Thomas Mele ,  Sean Seutter ,  Sanjeev Tandon ,  R. Iyer

    发明人： Yaxin Wang ,  Yuji Maeda ,  Thomas Mele ,  Sean Seutter ,  Sanjeev Tandon ,  R. Iyer

    IPC分类号： H01L21/471

    CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45553 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

    摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

    摘要翻译： 本发明的实施方案通常提供一种沉积含硅膜的方法。 在一个实施例中，将含​​硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板 置于室内至低于约550摄氏度的温度。 在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3 3）3 -N。

    Low thermal budget silicon nitride formation for advance transistor fabrication
    10.
    发明申请
    Low thermal budget silicon nitride formation for advance transistor fabrication 审中-公开
    用于推进晶体管制造的低热预算氮化硅形成

    公开(公告)号：US20060019032A1

    公开(公告)日：2006-01-26

    申请号：US10898547

    申请日：2004-07-23

    申请人： Yaxin Wang ,  Suryanarayanan Iyer ,  Sean Seutter

    发明人： Yaxin Wang ,  Suryanarayanan Iyer ,  Sean Seutter

    IPC分类号： C23C16/00

    CPC分类号： H01L21/0217 ,  C23C16/308 ,  C23C16/345 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3185 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one embodiment, a method for depositing a layer containing silicon nitride on a substrate surface is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to an alkylaminosilane compound and at least one ammonia-free reactant. In another embodiment, a method for depositing a silicon nitride material on a substrate is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to bis(tertiarybutylamino)silane and a reagent, such as hydrogen, silane and/or disilane.

    摘要翻译： 在一个实施例中，提供了一种用于在衬底表面上沉积含有氮化硅的层的方法，其包括将衬底定位在处理室中，将衬底保持在预定温度，并将衬底表面暴露于烷基氨基硅烷化合物和至少一个 无氨反应物。 在另一个实施例中，提供了一种在衬底上沉积氮化硅材料的方法，其包括将衬底定位在处理室中，将衬底保持在预定温度，并将衬底表面暴露于双（叔丁基氨基）硅烷和试剂， 例如氢，硅烷和/或乙硅烷。