公开(公告)号：US20200098586A1

公开(公告)日：2020-03-26

申请号：US16138507

申请日：2018-09-21

Applicant: Applied Materials, Inc.

Inventor： Ming Xia ,  Dongqing Yang ,  Ching-Mei Hsu

IPC: H01L21/311 ,  H01L21/67

Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.

公开(公告)号：US20190311883A1

公开(公告)日：2019-10-10

申请号：US16448305

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US20190252216A1

公开(公告)日：2019-08-15

申请号：US15897860

申请日：2018-02-15

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/67 ,  H01L21/311 ,  B01F5/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US10297458B2

公开(公告)日：2019-05-21

申请号：US15670919

申请日：2017-08-07

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/302 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3105

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

公开(公告)号：US09721789B1

公开(公告)日：2017-08-01

申请号：US15332870

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Lala Zhu ,  Fei Wang ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/324 ,  H01L21/67 ,  H01L21/687 ,  H01L21/673

CPC classification number: H01L21/02334 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67086 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67389 ,  H01L21/68707 ,  H01L21/68742

Abstract: Methods of selectively removing silicon oxide are described. Exposed portions of silicon oxide and spacer material may both be present on a patterned substrate. The silicon oxide may be a native oxide formed on silicon by exposure to atmosphere. The exposed portion of spacer material may have been etched back using reactive ion etching (RIE). A portion of the exposed spacer material may have residual damage from the reactive ion etching. A self-assembled monolayer (SAM) is selectively deposited over the damaged portion of spacer material but not on the exposed silicon oxide or undamaged portions of spacer material. A subsequent gas-phase etch may then be used to selectively remove silicon oxide but not the damaged portion of the spacer material because the SAM has been found to not only preferentially adsorb on the damaged spacer but also to halt the etch rate.

公开(公告)号：US11915950B2

公开(公告)日：2024-02-27

申请号：US17583935

申请日：2022-01-25

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/67103 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/002 ,  H01J2237/332

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US20220148894A1

公开(公告)日：2022-05-12

申请号：US17583935

申请日：2022-01-25

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US11101136B2

公开(公告)日：2021-08-24

申请号：US16416865

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

公开(公告)号：US10679870B2

公开(公告)日：2020-06-09

申请号：US15897860

申请日：2018-02-15

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/311 ,  H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44 ,  B01F5/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US20190043726A1

公开(公告)日：2019-02-07

申请号：US15670919

申请日：2017-08-07

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/3065 ,  H01J37/32

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.